SHAHEEN GROUP OF INSTITUTIONS

SHAHEEN JUNIOR COLLEGEKARIMNAGAR

Opposite Laxminarayana Hospital,7 Hills Road, Mukarrampura,Karimnagar
LONG ANALOG ELECTRONICS NUMBER
TERM 10,11
03 & 04 JANUARY-2025

1. The intrinsic semiconductor becomes an (b) The valence band is completely filled and
insulator at the conduction band is pa1tially filled
(a) 0 o C (b)−10 0o C (c) The valence band is completely filled
(c) 300 K (d)0 K (d) The conduction band is completely empty
7. The peak voltage in the output of a half‐wave
2. For the given circuit of p‐n junction diode, diode rectifier fed with a sinusoidal signal
which of the following statement is correct: without filter is 10 V. The DC component of
[2002] the output voltage is [2004]
(a) 10/ √ 2 V (b)10/ πV
(c) 10 V (d)20/ πV
8. Of the diodes shown in the following
diagrams, which one is reverse biased? [2004]

(a) In forward biasing the voltage across R is

V
(b) In forward biasing the voltage across R is
2y
(c) In reverse biasing the voltage across R is V
(d) In reverse biasing the voltage across R is 2
∇
3. Barrier potential of a p‐n junction diode does
not depend on [2003] 9. Choose the only false statement from the
(a) Temperature (b) Forward bias following [2005]
(c) Doping density (d) Diode design (a) Substances with energy gap of the order of
4. The reverse biasing in a p‐n junction diode: 10 eV are insulators
[2003] (b) The conductivity of a semiconductor
(a) Decreases the potential barrier increases with increase in temperature
(b) Increases the potential barrier (c) In conductors the valence and conduction
(c) Increases the number of minority charge bands may overlap
carriers (d) The resistivity of a semiconductor
(d) Increases the number of majority charge increases with increase in temperature
carriers
5. If a full wave rectifier circuit is operating from 10. Application of a forward bias to a p‐n
50 Hz mains, the fundamental frequency in the junction: [2005]
ripple will be [2003] (a) increases the number of donors on the n ‐
(a) 50 Hz (b) 70.7 Hz side
(c) 100 Hz (d) 25 Hz (b) increases the electric field in the depletion
6. In semiconductors at a room temperature zone
[2004] (c) increases the potential difference across the
(a) The valence band is partially empty and depletion zone
the conduction band is partially filled (d) widens the depletion zone

Page 1
11. Zener diode is used for [2005]
(a) producing oscillations in an oscillator 18. If a small amount of antimony is added to
(b) amplification germanium crystal [2011]
(c) stabilisation (a) the antimony becomes an acceptor atom
(d) rectification (b) there will be more free electrons than holes
12. A forward biased diode is [2006] in the semiconductor
(c) its resistance is increased
(a) (d) it becomes a ‐type semiconductor

(b)
19. In the following figure, the diodes, which are
(c) forward biased, are [2011]

(d)
13. A p‐n photodiode is made of a material with a
band gap of 2.0 eV . The minimum frequency
of the radiation that can be absorbed by the
material is nearly [2008] (a)
(a) 10 ×1 014 Hz (b)5 ×1 014 Hz
(c)1 ×1 014 Hz (d)20 ×1 014 Hz
14. A p‐n photodiode is fabricated from a
semiconductor with a band gap of 2.5 eV It
can detect a signal of wavelength [2009] (b)
(a) 6000 A (b) 4000 nm
(c) 6000 nm (d) 4000 A
15. Which one of the following statement is false?
[2010]
(a) Pure Si doped with trivalent impurities
gives a p‐type semiconductor (c)
(b) Majority carriers in a n ‐type
semiconductor are holes
(c) Minority carriers in a p‐type
semiconductor are electrons
(d) The resistance of intrinsic semiconductor
decreases with increase of temperature (d)
16. The device that can act as a complete (a) (c) only (b)(c) and (a)
electronic circuit is [2010] (c)(b) and (d) (d) (a), (b) and (d)
(a) Junction diode (b) Integrated circuit
(c) Junction transistor (d) Zener diode 20. Pure Si at 500 K has equal number of electron
(n e ) and hole (n h) concentrations of 1.
17. In forward biasing of the p‐n junction [2011] 5 ×1 0 m . Doping by indium increases n h to
16 −3

(a) the positive terminal of the battery is 4. 5 ×1 022 m−3 . The doped semiconductor is of
connected to n‐side and the depletion region
[2011]
becomes thin
(a) n ‐type with electron concentration
(b) the positive terminal of the battery is 22 −3
connected to n‐side and the depletion region n e=5 × 10 m
becomes thick (b) p‐type with electron concentration
10 −3
(c) the positive terminal of the battery is n e=2.5 × 10 m
co1mected to p‐side and the depletion region (c)n ‐type with electron concentration
23 −3
become thin n e=2.5 × 10 m
(d) the positive terminal of the battery is (d) p‐type having electron concentration
connected to p‐side and the depletion region n e=5 × 10 m
9 −3

becomes thick 21. A Zener diode, having breakdown voltage

Page 2
 equal to 15 V, is used in a voltage regulator (c) It is for a photodiode and points A and B
circuit shown in the figure. The current represent open circuit voltage and current,
through the diode is [2011] respectively
(d) It is for an LED and points A and B
represents open circuit voltage and short
circuit current respectively
25. The barrier potential of a p‐n junction depends
on [2014]
(a) 10 mA (b) 15 mA (i) Type of semiconductor material
(c) 20 mA (d) 5 mA (ii) Amount of doping
(iii) Temperature
22. Two ideal diodes are connected to a battery as Which one of the following is correct?
shown in the circuit. The current supplied by (a) (i) and (ii) only (b) (ii) only
the battery is [2012] (c) (ii) and (iii) only (d) (i), (ii) and (iii)

26. If in a p‐n junction, a square input signal of 10

V is applied, as shown [2015]

(a) 0.5 A (b) 0.75 A

(c) zero (d) 0.25 A
then the output across RL will be
23. C and Si both have same lattice structure,
having 4 bonding electrons in each. However,
C is insulator whereas Si is intrinsic
semiconductor. This is because [2012] (a)
(a) The four bonding electrons in the case of C
lie in the third orbit, whereas for Si they lie in
the fourth orbit
(b) In case of C the valance band is not (b)
completely filled at absolute zero temperature
(c) In case of C the conduction band is partly
filled even at absolute zero temperature (c)
(d) The four bonding electrons in the case of
C lie in the second orbit, whereas in the case
(d)
of Si they lie in the third orbit
24. The given graph represents V −I characteristic
27. In the given figure, a diode D is co1mected to
for a semiconductor device. [2014]
an external resistance R=100 Ω and an emf of
3. 5 V . If the barrier potential developed across
the diode is 0.5 V, the current in the circuit
will be: [2015 Re]

Which of the following statement is correct?

(a) It is V −I characteristic for solar cell where
point A represents open circuit voltage and
point B short circuit current
(a) 35 mA (b) 30 mA
(b) It is for a solar cell and points A and B
(c) 40 mA (d) 20 mA
represent open circuit voltage and current,
respectively
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28. Consider the junction diode as ideal. The
value ofcurrent flowing through AB is: [2016]

(a) 0 A (b)1 0−2 A

(c)1 0−1 A (d)1 0−3 A Then the output signal across R L will be
29. Which one of the following represents forward
bias diode? [2017]

(a) (a) (b)

(b)

(c) (c) (d)

(d)

30. In a p‐n junction diode, change in temperature 36. The diode shown in the circuit is a silicon
due to heating [2018] diode. The potential difference between the
(a) affects only reverse resistance points A and B will be [2013]
(b) affects only fo1ward resistance
(c) does not affect resistance ofp‐n junction
(d) affects the overall V −I characteristics ofp‐
n junction
31. When added an impurity into the silicon which
one of the following produces n‐type of
semiconductors? [2000]
(a) Iron (b) Magnesium
(c) Phosphorus (d) Aluminium (a) 6 V (b) 0.6 V
32. In a semi‐conducting material the mobilities of (c) 0.7 V (d) 0 V
electrons and holes are μe and μh respectively,
which of the following is true? [2005] 37. In the given figure, which of the diodes are
forward biased? [2014]
(a) μe < μh (b) μe > μh
μ =μ
(c) e h (d) μe <0 ; μh >0
33. When p−njunction diode is reverse biased,
then [2006]
(a) no current flows
(b) the depletion region is reduced
(c) the height of the potential barrier is
reduced
(d) the depletion region is increased
34. A light emitting diode (LED) has a voltage
drop of 2 V across it and passes a current of 10
mA . When it operates with a 6 V battery
through a limiting resistor R . The value of R is
[2006]
(a) 400 Ω (b)4 K
(c)200 Ω (d) 40 kΩ
35. If in a p−n junction diode, a square input (a) 1, 2, 3 (b) 2, 4, 5
signal of 10 V is applied as shown [2008] (c) 1, 3, 4 (d) 2, 3, 4

Page 4
38. In a PN ‐junction diode not connected to any
circuit [2015]
(a) the potential is the same everywhere (a)
(b) the P‐type is a higher potential than the N ‐
type side
(c) there is an electric field at the junction
directed from the N ‐type side to the P‐type (b)
side
(d) there is an electric field at the junction
directed from the P‐type side to the N ‐type
side
39. In a full wave rectifier in which input voltage
is represented by V =V M sin ωt , then peak (c)
inversion voltage ofnon‐conducting diode will
be [2018]
(a) −V ΛI (b)V M /2
(c)2 V M (d)0 (d)
40. In a solar cell, current is generated due to bond
breakage in which region? [2018] 46.The V – I characteristic of a silicon diode is
(a) depletion region (b)n ‐region shows in figure. The resistance of the diode at
(c) p‐region (d) None of these I D =15 mA is
41. In pure semiconductor, the number of
18
conduction electrons is 6×10 per cubic
metre. How many holes are there in a sample
of size 1 cm×1 cm×1 mm?
10 11 11 10
(a) 3×10 (b) 6×10 (c) 3×10 (d) 6×10
42. The probability of electorns to be found in the
conduction band of an intrinsic semiconductor (a) 5 Ω (b) 10 Ω (c) 2 Ω (d) 20 Ω
of finite temperature. 47.What happens during regulation action of a
(a) Increases exponentially with increasing zener diode?
band gap (a) The current through the series resistance
(b) Decreases exponentially with increasing ( R S ) changes.
band gap
(c) Decreases with increasing temperature. (b) The resistance offered by the zener
(d) Is independent of the temperature and band changes
gap (c) The zener resistance is constant.
43. A semiconductor has equal electron and hole (d) Both (a) and (b)
8 3 D
48.Three photo diodes D1 , D 2 and 3 are made
concentration of 6×10 per m on doping
with certain impurity, electron concentration of semiconductors having bandgap of 2 .5 eV,
increases to 2 eV and 3 eV, respectively. Which one will
9×1012 per m3 The new hole concentration is o

4
be able to detect light of wavelength 6000 A ?
3 2 2
(a) 2×10 per m (b) 2×10 per m D
4 3 2 3
(a) D1 (b) D 2 (c) 3 (d) D1 and D 2 both
(c) 4×10 per m (d) 4×10 per m 49.The conductivity of a semiconductor increases
44. In the question number 27, the equivalent with increase in temperature because
resistance between the points A and B if (a) Number density of free current carriers
V A >V B is increases
(b) Relaxation time increases
(a) 10 Ω (b) 20Ω (c) 30Ω (d) 15Ω
(c) Both number density of carriers and
45. Of the diodes shown in the following figures,
relaxation time increase.
which one is reverse biased?
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 (d) Number density of current carriers (a) P (b) Al
increases relaxation time decreases but effect (c) B (d) Mg
of decrease in relaxation time is much less 59. Which one of the following diagrams correctly
than increase in number density. represents the energy levels in the p–type
50. A N-type semiconductor is semiconductor?
(a) Negatively charged (b) Positively charged
(c) Neutral (d) None of these
51. The mobility of free electron is greater than
(a)
that of free holes because
(a) The carry negative charge
(b) They are light (b)
(c) They mutually collide less
(d) They require low energy to continue their
motion (c)
52. Electric conduction in a semiconductor takes
place due to
(a) electrons only (d)
(b) holes only
(c) both electrons and holes 60. In p-type semiconductor, the major charge
(d) neither electron nor holes carriers are :
53. Let np and ne be the numbers of holes and (a) holes (b) electrons
conduction electrons in an intrinsic (c) protons (d) neutrons
semiconductor 61. Copper and silsicon is cooled from 300 K to
60K, the specific resistance :-
(a) np > ne (b) np = ne
(a) Decrease in copper but increase in silicon
(c) np < ne (d) np  ne
(b) Increase in copper but increase in silicon
54. Let np and ne be the numbers of holes and (c) Increase in both
conduction electrons in an extrinsic (d) Decrease in both
semiconductor 62. Value of forbidden energy gap for semi
(a) np > ne (b) np = ne conductor is :
(c) np < ne (d) np  ne (a) 1 eV (b) 6 eV
55. An electric field is applied to a semiconductor. (c) 0 eV (d) 3 eV
Let the number of charge carrier be n and the 63. Hole are the charge carriers in :
average drift speed be . If the temperature is (a) semiconductor (b) ionic solids
increased, (c) p-type semiconductor (d) metals
(a) both n and will increase 64. Regarding a semi-conductor which one of the
(b) n will increase but will decrease following is wrong ?
(c) will increases but n will decrease (a) There are no free electrons at 0 K
(d) both n and will decrease (b) There are no free electrons at room
56. When an impurity is doped into an intrinsic temperature
semiconductor, the conductivity of the (c) The number of free electrons increases
semiconductor with rise of temperature
(a) increases (b) decreases (d) The charge carriers are electrons and holes.
(c) remains the same (d) become zero 65. At absolute zero, Si acts as :
57. A semiconductor is doped with a donor (a) non-metal (b) metal
impurity (c) insulator (d) none of these
(a) The hole concentration increases 66. By increasing the temperature, the specific
(b) The hole concentration decreases resistance of a conductor and ~
(c) The electron concentration increases semiconductor:
(d) The electron concentration decreases (a) increases for both
58. Which of the following when added as an (b) decreases for both
impurity into silicon produces n-type (c) increases, decreases respectively
semiconductor ? (d) decreases, increases respectively

Page 6
67. The energy band gap is maximum in : 74. If the ratio of the concentration of electrons to
(a) metals (b) superconductors
(c) insulators (d) semiconductors that of holes in a semiconductor is and the
68. In a p-type semiconductor germanium is
doped with : ratio of currents is , then what is the ratio of
(a) gallium (b) aluminium their drift velocities ?
(c) boron (d) all of these (a) 5/8 (b) 4/5
69. Which of the following statements is true for (c) 5/4 (d) 4/7
an n-type semi-conductor ? 75. A p-type semiconductor is
(a) th donor level lies closely below the (a) positively charged
bottom of the conduction band (b) negatively charged
(b) The donor level lies closely above the top (c) uncharged
of the valence band (d) uncharged at 0 K but charged at higher
(c) The donor level lies at the halfway mark of temperatures.
the forbidden energy gap 76. In a semiconductor diode barrier potential (V0)
(d) None of the above offers opposition to :-
70. An n-type semiconductor is (a) Holes in P-region only
(a) negatively charged (b) positively charged (b) Free electrons in n-region only
(c) neutral (d) none of the above (c) Majority carriers in both regions
71. The resistance of a semiconductor and of a (d) Majority as well as minority carriers in
conductor : both region
(a) increases with temperature for both 77. The donor atom electrons have an energy leve
(b) decreases with temperature for both (a) Slightly below the conduction band
(c) increases and decreases respectively with (b) Slightly above the conduction band
increase in temperature (c) Slightly below the valence band
(d) decreases and increases respectively with (d) Slightly above the valence band
increase in temperature
72. In semiconductors at a room temperature 78. Symbolic representation of photodiode is-
(a) The valence band is completely filled and
the conduction band is partially filled
(b) The valence band is completely filled
(a) (b)
(c) The conduction band is completely empty
(d) The valence band is partially empty and
the conduction band is partially filled
(c) (d)
73. In the energy band diagram of a material
79. Symbol of zener diode-
shown below, the open circles and filled
circles denote holes and electrons respectively.
(a) (b)
The material is a/an :

(c) (d)

80. Diffusion current in a p-n junction is greater

than the drift current in magnitude
(a) if the junction is forward-baised
(b) if the junction is reverse-baised
(c) if the junction is unbiased
(a) p-type semiconductor (b) insulator
(d) in no case
(c) metal (d) n-type
81. What accounts for the flow of charge carriers
semiconductor
in forward and reverse biasing of silicon P-N
diode-

(a) Drift in both reverse and forward bias

Page 7
 (b) Drift in forward bias and diffusion in
reverse bias I
(c) Drift in reverse bias and diffusion in
forward bias
(d) Diffusion in both forward and reverse bias (d) V
82. The current flowing through the zener diode in 87. If the forward voltage in a diode is increased,
fig. is- the width of the depletion region-
(a) Decreases (b) Increases
(c) Fluctuates (d) does not change
88. Function of rectifier is
(a) To convert ac into dc
(b) To convert dc into ac
(a) 20 mA (b) 25 mA (c) Both (a) and (b)
(c) 15 mA (d) 5 mA (d) None of these
83. The resistance of a reverse baised P-N 89. In a junction diode, the holes are due to :
junction diode is about- (a) protons (b) extra electrons
2 (c) neutrons (d) missing electrons
(a) 1 ohm (b) 10 ohm 90. Depletion layer consists of :
3 6 (a) electrons (b) protons
(c) 10 ohm (d) 10 ohm
84. The depletion layer in silicon diode is 1 m (c) mobile charge carriers (d) immobile ions
wide and the knee potential is 0.6 V, then the 91. In forward bias the width of depletion layer in
electric field in the depletion layer will be a p-n junction diode :
(a) increases (b) decreases
(a) Zero (b) 0.6 Vm–1 (c) remains constant
(c) 6 × 104 V/m (d) 6 × 105 V/m (d) first increases then decreases
85. In the circuit given below, the value of the 92. The inverse saturation current in a P-N
current is –5
junction diode at 27°C is 10 amp. The value
7.62
of forward current at 0.2 volt will be- (e =
(a) 0 amp (b) 10–2 amp 2038.6)
(c) 1 amp (d) 0.10 amp –3 –3
(a) 2037.6 × 10 A (b) 203.76 × 10 A
86. Choose the correct option for the forward –3 –3
biased characteristics of a p–n junction. (c) 20.376 × 10 A (d) 2.0376 × 10 A
93. Reason for potential barrier in p-n junction is
I (a) excess of positive charge at junction
(b) deficiency of positive charge at junction
(c) deficiency of negative charge at junction
(d) excess of positive and negative charge at
(a) V
junction
94. In p-n junction depletion region decreases
I
when :
(a) zero bias (b) forward bias
(c) reverse bias (d)temperature decreases
(b) V 95. For the given circuit shown in fig, to act as full
wave rectifier, a.c. input should be connected
I across ........and........the d.c. output would
appear across........and........

(c) V

Page 8
 (a) A, C and B, D (b) B, D and A, C
(c) A, B and C, D (d) C, A and D, B
96. A frorward biased diode is :-

(a) (a) (b)

(b)
(c)
(d) (c)
97. In a full wave rectifier circuit operating from
50 Hz mains frequency, the fundamental
frequency in the ripple would be :
(a) 50 Hz (b) 25 Hz (d)
(c) 100 Hz (d) 70.7 Hz
98. In the following, which one of the diodes is 101. The drift current in a p-n junction is
reverse biased? (a) from the n-side to the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side if the junction
is forward-baised and in the opposite direction
(a) if it is reverse-biased
(d) from the p-side to the n-side if the junction
is forward-biased and in the opposite direction
if it is reverse-baised
102. The diffusion current in a p-n junction is
(b)
(a) from the n-side to the p-side
(b) from the p-side to the n-side
(c) from the n-side to the p-side of the junction
is forward-biased and in the opposit direction
(c) if it is reverse-baised
(d) from the p-side to the n-side if the junction
is forward-baised and in the opposite direction
if it is reverse-biased
(d) 103. To make a PN junction conducting
99. The circuit has two oppositely connected ideal (a) The value of forward bias should be more
diodes in parallel. What is the current flowing than the barrier potenital
in the circuit? (b) The value of forward bias should be less
4  than the barrier potential
(c) The value of revers bias should be more
D2
D1 than the barrier potential
3 
(d) The value of revers bias should be less
12 V 2 
than the barrier potential
104. Zener diode is used as
(a) 2.31 A (b) 1.33 A (a) Half wave rectifer
(c) 1.71 A (d) 2.00 A (b) Full wave rectifier
100. If in p-n junction diode, a square input signal (c) ac voltage stabilizer
of 10 V is applied as shown. Then the output (d) dc voltage stabilizer
signal across R will be 105. Two identical P-N diodes are connected in
series in the following ways. Maximum
current will flow in circuit-

Page 9
 (c) 1.6 mA, 0.66A, 20mA
(d) None
108. A p-n photodiode is fabricated from a
semiconductor with a band gap of 2.5 eV. It
[A] can detect a signal of wavelength
(a) 6000 Å (b) 4000 nm
(c) 6000 nm (d) 4000 Å
109. Pure Si at 500K has equal number of
electron (ne) and hole (nh) concentrations of
[B]
1.5 × 1016 m–3. Doping by indium increases
nh to 4.5 × 1022 m–3. The doped
semiconductor is of :
[C] (a) n–type with electron concentration n e = 5
× 1022 m–3
(b) p–type with electron concentration n e =
2.5 ×1010 m–3
[D] (c) n–type with electron concentration ne = 2.5
(a) A (b) B
× 1023 m–3
(c) C (d) D
(d) p–type having electron concentrations n =
106. In given circuit determine value of RMS e
current through 10 k resistance, used p-n 5 × 109 m–3
junction is ideal.

110. A zener diode, having breakdown voltage

equal to 15V, is used in a voltage regulator
circuit shown in figure. The current through
the diode is :
(a) 0.55 mA (b) 5.5 mA
(c) 0.77 mA (d) 1.1 mA
107. What is the value of current I in given
circuits :-

(a) 10 mA (b) 15 mA
(c) 20 mA (d) 5 mA
111. The given graph represents V – 
characteristic for a semiconductor device.
(A)
A

Which of the following statement is correct ?

(a) It is V – characteristic for solar cell
(B) where, point A represents open circuit voltage
and point B short circuit current.
(b) It is for a solar cell and points A and B
represent open circuit voltage and current,
respectively.
(C) (c) It is for a photodiode and points A and B
(a) 2mA, 1A, 24mA represent open circuit voltage and current
(b)2.4mA,1.33A, 30mA respectively.
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 (d) It is for a LED and points A and B
represent open circuit voltage and short circuit
current, respectively.
112. The barrier potential of a p-n junction
depends on :
(a) type of semi conductor material
(b) amount of doping
(c) temperature
Which one of the following is correct?
(a) (a) and (b) only (b) (b) only
(c) (b) and (c) only (d) (a), (b) and (c)
113. Consider the junction diode as ideal. The
value of current flowing through AB is :
A 1k B
+4V –6V
(a) 10–3 A (b) 0 A
(c) 10–2 A (d) 10–1 A
114. The temperature (T) dependence of
resistivity () of a semiconductor is
represented by

(a)

(b)

(c)

(d)

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