Chapter 2 Part 1
Chapter 2 Part 1
Communication Eng
Analoge Electronic
Lecture 6 part 1
Ass. Lec hamzah hadi
Chapter two Diode Circuits
Load-line analysis
The circuit in the figure below is the simplest of diode configurations. It will
be used to describe the analysis of a diode circuit using its actual
characteristics.
In the figure below the diode characteristics are placed on the same set of axes
as a straight line defined by the parameters of the network. The straight line
is called a load line because the intersection on the vertical axis is defined by
the applied load 𝑅. The analysis to follow is therefore called load-line
analysis. The intersection of the two curves will define the solution for the
network and define the current and voltage levels for the network.
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Chapter two Diode Circuits
+𝐸 − 𝑉𝐷 − 𝑉𝑅 = 0
𝐸 = 𝑉𝐷 + 𝑉𝑅
𝐸 = 𝑉𝐷 + 𝐼𝐷 𝑅
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Chapter two Diode Circuits
Note: Change the level of 𝑅 (the load), resulting change in the slope of the
load line and a different point of intersection between the load line and the
diode characteristics.
We now have a load line defined by the network and a characteristic curve
defined by the diode. The point of intersection between the two is the point of
operation for this circuit. By simply drawing a line down to the horizontal
axis, we can determine the diode voltage 𝑉𝐷𝑄, whereas a horizontal line from
the point of intersection to the vertical axis will provide the level of 𝐼𝐷𝑄.
Using the Q-point values, the dc resistance for the diode calculate by the
following equation: -
𝑉𝐷𝑄
𝑅𝐷 =
𝐼𝐷𝑄
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Chapter 2 Diode Circuits
Example 1: For the series diode configuration in the figure below, determine:
a. 𝑉𝐷𝑄 and 𝐼𝐷𝑄
b. 𝑅𝐷
c. 𝑉𝑅
Solution:
a.
𝐸 = 𝑉𝐷 + 𝐼𝐷 𝑅
At 𝑉𝐷 = 0 𝑉, 𝐼𝐷 = 𝐸|
𝑉 =
10 𝑉 = 20 m𝐴
𝑅 𝐷 =0 𝑉 0.5 𝐾Ω
At 𝐼𝐷 = 0 𝐴, 𝑉𝐷 = 𝐸|𝐼𝐷=0 𝐴 = 10 𝑉
The resulting load line appears in figure below. The intersection between the
load line and the characteristic curve defines the Q-point as:
𝑉𝐷𝑄 ≅ 0.78 𝑉
𝐼𝐷𝑄 ≅ 18.5 m𝐴
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Chapter Diode Circuits
b.
𝑉𝐷 𝑄 0.78 𝑉 = 42.16 Ω
𝑅𝐷 = =
𝐼𝐷𝑄 18.5 m𝐴
c.
𝑉𝑅 = 𝐸 − 𝑉𝐷 = 10 − 0.78 = 9.22 𝑉
Example 2: Repeat Example 1 using the approximate equivalent model for the
silicon semiconductor diode.
Solution:
a.
The load line is redrawn as shown below with the same intersections as
defined in Example 1. The characteristics of the approximate equivalent
circuit for the diode have also been sketched on the same graph. The resulting
Q -point is
𝑉𝐷𝑄 = 0.7 𝑉
𝐼𝐷𝑄 ≅ 18.5 m𝐴
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Chapter Diode Circuits
b.
𝑉𝐷 𝑄 0.7 𝑉 = 37.84 Ω
𝑅𝐷 = =
𝐼𝐷𝑄 18.5 m𝐴
c.
𝑉𝑅 = 𝐸 − 𝑉𝐷 = 10 − 0.7 = 9.3 𝑉
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Chapter Diode Circuits
b.
𝑉𝐷 𝑄
𝑅 = = 0𝑉
= 0 Ω (or a short-circuit equivalent)
𝐷 𝐼𝐷𝑄 20 m𝐴
c.
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Chapter 2 Diode Circuits
𝑉𝑅 = 𝐸 − 𝑉𝐷 = 10 − 0 = 10
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