Arvind Academy: Section A
Arvind Academy: Section A
PHYSICS 2025 SP 4
Class 12 - Physics
Section A
1.
(d) 1 eV
Explanation:
For a semiconductor, Eg ≃ 1 eV
2. (a) 27 mC
Explanation:
27 mC
3. (a) Total internal reflection
Explanation:
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Total internal reflection principle is used in optical fibre.
4.
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(d) 27 : 1
Explanation:
27 : 1
5.
d
ca
Q
(d) ε0
Explanation:
dA
Q
The net electric flux coming of the sphere will be ε0
.
6.
(b) ni A
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Explanation:
The magnetic moment associated with a coil carrying current is given by the product of its area and the current through it.
M = niA
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7.
(b) l decreases and A increases
Explanation:
L= self-inductance, A = area of cross-section.
2
As we know, L = μ r μ0
N
ll
Al
2
N A
L = μr μ0
l
As, μ and N are constant here so, to increase L for a coil, area A must be increased and l must be decreased.
r
8. (a) 0.075 J
Explanation:
m = NIA = 0.6 J/T
Torque = mBsinθ = 0.6 × 0.25 × 0.5 = 0.075 J
9.
(c) maximum in the forward direction and zero in the backward direction.
Explanation:
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maximum in the forward direction and zero in the backward direction.
10.
(b) charge, which is a fraction of a coulomb is not possible
Explanation:
Charge quantization means that the charge cannot take any arbitrary values, but only values that are integral multiples of the
fundamental charge.
11.
(b) 2.3 V
Explanation:
Let potential across A and B is V, so by Kirchhoff’s loop law
VAB = (5000 × 0.2 × 10-3) +0.3 + 5000 × 0.2 × 10-3
VAB = 1V + 0.3V + 1V
VAB = 2.3 V
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12.
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(d) Real, inverted and magnified
Explanation:
d
ca
dA
Intermediate image (P'Q') is formed by objective which is a convex lens and the object (PQ) is placed at a distance slightly
greater than the focal length. Hence, producing a real, inverted and magnified image.
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13.
(d) A is false but R is true.
Explanation:
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14. (a) Both A and R are true and R is the correct explanation of A.
Explanation:
Both A and R are true and R is the correct explanation of A
15. (a) Both A and R are true and R is the correct explanation of A.
Explanation:
When light waves from two coherent sources superimpose at any particular point, crest of one wave falls on trough of the other
and trough falls on the crest, the amplitude of the resultant wave is zero. Hence resultant intensity is zero. This is the
phenomenon of destructive interference. Thus destructive interference produces darkness.
16. (a) Both A and R are true and R is the correct explanation of A.
Explanation:
Both A and R are true and R is the correct explanation of A.
Section B
17. Here qA = 5 × 10-8 C; qB = -3 × 10-8 C ; r = 16 cm = 0.16 m
Let O be the point, where the electric potential is zero due to the two charges as shown in figure given below.
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Suppose that the distance AO = x. Then
BO = r - x = 0.16 - x
Electric potential at point O due to qA,
1 qA
VA =
4πε0 AO
−8
9 5×10 450
= 9 × 10 × =
x x
450 270
or + (− ) = 0
y
x 0⋅16−x
or 450
x
=
270
0⋅16−x
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or x = 0·1 m = 10 cm (from charge of 5 × 10-8 C)
18. Here, δ = 60o, BH = 0.4 × 10-4 T
B= cos δ
=
0.4×10
cos 60
∘
dA
19. a. An enormously large number of energy levels closely spaced in a very small energy range constitute an energy band. The
allowed energy bands are separated by regions in which energy levels cannot exist. These forbidden regions are called band
gaps or energy gaps.
The highest energy band occupied by the valence electrons is called the valence band and the next empty allowed band is
called the conduction band.
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b. i. Metal
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ii. Semiconductor
When gaseous hydrogen is bombarded with an electron beam, the energy of the gaseous hydrogen becomes = −13.6 + 12.5 eV
i.e., −1.1 eV.
Thus, the electrons of hydrogen will be raised to the third orbit, because this energy is approximately equal to the energy of
gaseous hydrogen(-1.5eV).
Now, the following transitions are possible
n = 3 to n = 2 then n = 2 to n = 1 or n = 3 to n = 1
Therefore, three spectral lines will be obtained. These are
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1
λ
= 1.097 × 10
7
(
1
2
−
1
2
) or λ = 6.56 × 10 −7
m or 656 nm. This line lies in the Balmer series
2 3
1 1 1
λ
= 1.097 × 10
7
(
2
−
2
) or λ = 1.22 × 10 7
m or 122 nm. This line lies in the Lyman series.
1 2
λ
= 1.097 × 10
7
(
1
2
−
1
2
) or λ = 1.03 × 10 7
m or 103 nm. This line lies in the Lyman series.
1 3
21. a. Similarities:
Both electrostatic field and magnetic field: Follows the principle of superposition.
Depends inversely on the square of distance from source to the point of interest.
Differences:
i. Electrostatic field is produced by a scalar source (q) and the magnetic field is produced by a vector (I.dI).
ii. Electrostatic field is along the displacement vector between source and point of interest; while magnetic field is
perpendicular to the plane, containing the displacement vector and vector source.
b. According to Biot- Savart law,
⃗
→ μ0 ⎡ ∵ |d l × r |⃗ = rdl; ⎤
R
dB = 4π 2
Idl
y
= ∫ dB cos θ
2πR
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μ0 Idl
= ∫
4π
0
2 2
(x + R ) 2
→ 2
B =
μ IR
22
0
2(R + x ) 2
3
^
i
d
ca
OR
μ
we know that, |dB| = 0 Idl sin θ
4π r2
dA
θ = 90°; sin θ = 1
−7 −2
10 ×10× 10 −8
|dB| = = 4 × 10 T
−2
25×10
^ ^ ^ ^ ^
dl × r = Δx i × y j = yΔx( i × j ) = yΔxk
Section C
22. i. For conductor
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Relaxation time is the time between two successive collisions of an electron with atoms/ions of the conductor.
The relation between resistivity and relaxation time is given by:
m
ρ =
2
ne τ
In conductors, average relaxation time decreases with increase in temperature due to which resistivity increases with increase in
temperature.
In semiconductors, the increase in number density (with increase in temperature) is more than the decrease in relaxation time, the
net result is therefore a decrease in resistivity with increase in temperature.
23. a.
During the formation of p - n junction diode; due to the concentration gradient across p and n sides of a diode, holes diffuse
from p side to n side and electrons diffuse from n side to p side giving rise to development of immobile positive charges on the
n side and the negative charges on the p side across the junction. Thus a potential barrier is formed at the junction.
b. The VI characteristics are obtained by connecting the battery, to the diode, through a potentiometer the battery, to the diode,
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through a (or, rheostat). The applied voltage to the diode is changed. The applied voltage to the diode is changed. The values
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of current, for different values of voltage, are noted and a graph between V and I is plotted. The V-I characteristics of a diode,
have the form the form shown here.
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d Ac
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Ar
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25. i. The density of nuclear matter is approximately 2.3×1017kgm-3 which is tremendously larger than the density of ordinary
material, say water, which is 103kgm-3. This is due to the fact that most of an atom is empty and its whole mass is
concentrated at its nucleus. Ordinary material, consisting of atoms, has a large amount of empty space and consequently its
density is small.
ii. Coulombian force between two protons is repulsive. However, within a nucleus a number of protons and neutrons exist
together within a very small space. So it is clear that nuclear force is not coulomb force but is an extremely short range force
which is attractive in nature and is responsible for maintaining all the nucleons together.
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iii.
d
ca
dA
∴ W0 = 5.2 eV
27. Intensity at any point on the screen,
−−−−
I = I1 + I2 + 2√I I cos ϕ1 2
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Let I0 be the intensity of either source. Then I1 = I2 = I0, and I = 2I0 (1 + cos ϕ) = 4I0 cos2
ϕ
When p = λ , ϕ = 2π
I = 4I0 cos2 = 4 I0 cos2π = 4I0 = k
ϕ
∴
2
i. When p = λ
4
,ϕ =
π
∴ I = 4I0 cos2 π
4
,= 4 I0 × 1
2
= 2 I0 = k
ii. When p = λ
3
,ϕ =
2π
∴ I = 4I0 cos2 π
3
= 4 I0 × 1
4
= I0 = k
iii. When p = λ
2
,ϕ = π
∴ I = 4I0 cos2 π
2
=0
28. i. Large deflection means a high current for short time. So, to produce large deflection, induced current should be high and to
produce high induced current, rate of change of flux should be high, i.e. more change in magnetic flux in less time.
Large deflection in the galvanometer connected with the coil C1 in given question, can be obtained when change in magnetic
flux with the coil is made fast. So, according to the diagram given in question,
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a. fast change in magnetic flux in the coil C1 can be done by moving the coil C2 quickly, towards C1 or by moving the coil
C2 quickly away from C1
b. by switching off and on the key, more change of magnetic flux linked with the coil C1 can be done in less time.
ii. The induced current can be demonstrated by connecting a torch bulb (in place of galvanometer) in Coil C1. Due to induced
current the bulb begins to glow.
OR
As the current was already flowing through the solenoid so it behaves like a magnet and let S pole is upper side a flux in-ring is
constant. So there is no induced current in ring.
When current is switched off, magnetic flux decrease so induced current produced in the ring in such a way so that it can increase
the flux. So the North pole is produced in the ring in the lower side and attracted by a solenoid. So, downward and solenoid are
fixed rings will not be able to move downward.
Section D
29. Read the text carefully and answer the questions:
Maxwell showed that the speed of an electromagnetic wave depends on the permeability and permittivity of the medium through
which it travels. The speed of an electromagnetic wave in free space is given by c = . The fact led Maxwell to predict that
1
√μ0 ε0
light is an electromagnetic wave. The emergence of the speed of light from purely electromagnetic considerations is the crowning
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achievement of Maxwell’s electromagnetic theory. The speed of an electromagnetic wave in any medium of permeability μ and
permittivity ε will be where K is the dielectric constant of the medium and μ is the relative permeability.
c
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r
√Kμ
r
2
ε0 E
2
= energy density =
2
−2
Volume
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= [ML-1T-2]
1 ML T
2
∴ [ ε0 E ] =
2 3
L
Ac
(ii) (c) [ε ] = M-1L-3T4A2
0
Explanation:
q1 q2
As ε = 0 (from Coulomb's law)
2
4πFR
2
= M-1L-3T4A2
2 [AT]
d
ε0 = C
2 2
Nm −2
MLT L
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ε0 1
OR
ε0
, where ε = permittivity of free
0
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space.
According to Gauss' theorem, if the plates have same surface charge density but having opposite signs, then the
electric field in region I is zero.
EI = EA + EB = σ
2ε0
+ (−
σ
2ε0
) =0
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+ (− )
2ε0 2ε0
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Explanation:
In region II or between the plates, the electric field.
EII = EA - EB = +
σ
2ε0 2ε0
σ
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σ(σA or σB ) 17.0×10
−22
= ε0
=
−12
8.85×10
OR
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(a) cylindrical
Explanation:
In order to estimate the electric field due to a thin finite plane metal plate, we take a cylindrical cross-sectional area A
and length 2r as the gaussian surface.
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Section E
31. i. The working of an optical fibre is based on the phenomena of total internal reflection.
Given, refractive index of the glass fibre with respect to air,
μ = 1.68
a
μ =
2 g
outer
= 1.44
Let the critical angle be ic
μ
So, μ = 2
μ1
=
1
sin ic
μ
1 1.44
⇒ sin ic = = = 0.8571
μ2 1.68
−1 ∘
⇒ ic = sin (0.8571) ≈ 59
The total internal reflection will take place when the angle of incidence i will be greater than the critical angle ic, i.e. i > ic =
59° or when angle of refraction, r < rmax
where, rmax = 90° - ic = 90° - 59° = 31°
sin imax
So, a
μg =
sin rmax
= 1.68
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or imax = sin-1 (0.8652) = 60°
Thus, all the rays which are incident in the range 0 < i < 60°, will suffer total internal reflection in the pipe (but i ≠ 0).
ii. If the outer covering of the pipe is not present, then,
Refractive index of the outer pipe, μ1 = Refractive index of air = 1
For the angle of incidence i = 90°, we can write Snell’s law at the air−pipe interface as:
sin
sin
=μ
i
sin
= 1.68
i
sin r = sin 90
1.68
= 1
1.68
= 0.59
⇒ r = 36.5°
Now, i' = 90° - r
⇒ i′ = 90°− 36.5°
⇒ i' = 53.5°
Since i’ > r, all incident rays will suffer total internal reflection.
OR
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i.
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The diffraction pattern formed can be understood by adding the contributions from the different wavelets of the incident
wavefront, with their proper phase differences. For the central point, we imagine the slit to be divided into two equal halves.
The contribution of corresponding wavelets, in the two halves, are in phase with each other. Hence we get a maxima at the
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central point. The entire incident wavefront contributes to this maxima. Maxima and minima are produced when the path
difference between waves is a whole number of wavelengths or an odd number of half wavelengths respectively.
All other points, for which θ = (n + ) , get a net non zero contribution from all the wavelets. Hence all such points are at
1
2
λ
a
, the net contribution, from all the wavelets, is zero. Hence these points are point of minima.
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We thus get a diffraction pattern on the screen, made up of points of maxima and minima.
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iii. Second secondary maxima, the net contribution is only from (effectively) 1 th of the incident wavefront on the slit and so on.
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and the work is also done to overcome the force of the charge on one-another.
q1 q2
W3 = ⋅
4π∈0
1
2
r
q1 q2
So, total work = q1Er1 + q2Er2 + 4π∈0
1
⋅
2
r
v = 10x + 5
dv d
= (10x + 5)
dx dx
= 10 dx
d
x+ 0
= 10
electric field is given by E = -10 N/C
b. Since electric field is constant in negative x-direction
as the flux enter in the cube will be same as flux come out through the cube so flux
ϕ = ϕ
in out hence,
Net flux from the cube = 0, so total electric flux is given by:
ϕ
net
=0
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OR
a. Since the work done depends on the final arrangement of the charges, and not on how they are put together, we calculate work
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needed for one way of putting the charges at A, B, C and D. Suppose, first the charge +q is brought to A, and then the charges
–q, +q, and -q are brought to B, C, and D, respectively. The total work needed can be calculated in steps:
i. Work needed to bring charge +q to A when no charge is present elsewhere: this is zero. ad
ii. Work needed to bring –q to B when +q is at A. This is given by (charge at B) × (electrostatic potential at B due to charge
+q at A)
2
q q
= −q × ( ) =−
Ac
4π ε0 d 4π ε0 d
iii. Work needed to bring charge +q to C when +q is at A and -q is at B. This is given by (charge at C) × (potential at C due to
charges at A and B
+q −q
= +q ( +
4π ε0 d
)
4π ε0 d√2
2
d
−q
= 4π ε0 d
(1 −
1
)
√2
iv. Work needed to bring -q to D when +q at A, -q at B, and +q at C. This is given by (charge at D) × (potential at D due to
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charges at A, B, and C)
+q −q q
= −q ( 4π ε0 d
+ +
4π ε0 d
)
4π ε0 d√2
2
−q
= (2 −
1
)
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4π ε0 d √2
Add the work done in steps (i), (ii), (iii), and (iv). The total work required is
2
−q
= 4π ε0 d
{(0) + (1) + (1 −
1
) + (2 −
1
)}
√2 √2
2
−q –
= 4π ε0 d
(4 − √2)
The work done depends only on the arrangement of the charges, and not how they are assembled. By definition, this is the
total electrostatic energy of the charges.
b. The extra work necessary to bring a charge q0 to point E when the four charges are at A, B, C, and D is q0 × (electrostatic
potential at E due to the charges at A, B, C, and D). The electrostatic potential at E is clearly zero since potential due to A and
C is cancelled by that due to B and D. Hence, no work is required to bring any charge to point E. Also, it can be said that the
work done over a closed surface is zero. (charges are opposite in corners so work done during one cycle cancel out by another
cycle) hence work done is zero.
33. i. A transformer is a device that changes a low alternating voltage into a high alternating voltage or vice versa. The transformer
works on the principle of mutual induction. A changing alternate current in the primary coil produces a changing magnetic
field, which induces a changing alternating current in the secondary coil.
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Energy losses in the transformer:
a. Flux leakage due to poor structure of the core and air gaps in the core.
b. Loss of energy due to heat produced by the resistance of the windings.
c. Eddy currents due to alternating magnetic flux in the iron core, which leads to loss of energy due to heat.
d. Hysterisis, frequent and periodic magnetisation and demagnetisation of the core, leading to loss of energy due to heat.
ii. a. Now,
Ns
N= Np
NS
⇒
100
= 100
⇒ NS = 10000 turns
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b. Current in primary is given by,
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IPVP = P
1100
⇒ IP = 220
= 5A
c. Voltage across secondary is given by,
Vs
Vp
=
Ns
Np
=N
ad
⇒ VS = 100 × 220 = 22000 V
d. Current in secondary is given by
Ac
VSIS = P
⇒ IS = P
Vs
= 1100
22000
= 0.05 A
e. In an ideal transformer,
Power in secondary = Power in primary = 1100 W
d
OR
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i.
Vm
Im =
2 2
√[ R + ( XC − XL ) ]
Im ( XC − XL )
= Im R
X − XL
−1 C
∴ ϕ = tan ( )
R
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ii. At resonance, Im is maximum
⇒ XL = XC,
[Alternatively: ω =
0
1
]
√LC
ω0 L
Quality factor of LCR circuit is defined as R
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d Ac
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Ar
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