Experiment No.

Title:- Test performance of Zener diode.

Relevant Program Outcomes (POs):-

 Basic and discipline specific knowledge: Apply knowledge of basic mathematics,
science and Engineering fundamentals and engineering specialization to solve the
Electronics & Telecommunication engineering problems.
 Engineering tools, experimentation and testing: Apply modern Electronics &
Telecommunication engineering tools and appropriate technique to demonstrate &
practice experimental measurements.

Skills / Competencies to be Developed:-

This practical is expected to develop the following skills for the industry-identified competency:
1) Identify different types of diodes.
2) Mount diode on breadboard.
3) Use DC power supply to give different voltages.
4) Use digital multi-meter to measure different voltages and currents.

Relevant Course Outcomes (COs):-

 Use relevant diode in different Electronics circuits.
 Maintain DC-regulated power supply.

Practical Outcomes:-
1. Measure static resistance of given diode.
2. Measure dynamic resistance of given diode.
3. Determine knee voltage of given diode.

Relevant Affective Domain Outcome:-

1. Ensure proper setting of the range of digital multi-meter before use.
2. Do not touch the leads/terminals of diode while doing measurement.
3. Handle components and equipments carefully.

Resources Required:-

 Digital Multi-meter
 DC regulated power supply
 DC Voltmeter
 DC Ammeter
 Breadboard
 Diode- IN4007 or any other equivalent diode
 Resistor- 1 KΩ
 Connecting wires
 Theory:-
Structure of zener diode
A Zener diode is a highly doped semiconductor device specifically designed to function in the
reverse direction. It is engineered with a wide range of Zener voltages (Vz), and certain types are
even adjustable to achieve variable voltage regulation.

Figurer: 1

How does a Zener Diode work in reverse bias?

A Zener diode functions similarly to a regular diode when forward-biased. However, in reverse-
biased mode, a small leakage current flows through the diode. As the reverse voltage increases and
reaches the predetermined breakdown voltage (Vz), current begins to flow through the diode. This
current reaches a maximum level determined by the series resistor, after which it stabilizes and
remains constant across a wide range of applied voltages.

There are two types of breakdowns in a Zener Diode: Avalanche Breakdown and Zener
Breakdown.

Avalanche Breakdown in Zener Diode

Avalanche breakdown occurs in both normal diodes and Zener diodes when subjected to high
reverse voltage. When a significant reverse voltage is applied to the PN junction, the free electrons
gain enough energy to accelerate at high velocities. These high-velocity electrons collide with other
atoms, causing the ejection of additional electrons. This continuous collision process generates a
large number of free electrons, resulting in a rapid increase in electric current through the diode. In
the case of a normal diode, this sudden surge in current could permanently damage it. However, a
Zener diode is specifically designed to withstand avalanche breakdown and can handle the sudden
current spike. Avalanche breakdown typically occurs in Zener diodes with a Zener voltage (Vz)
greater than 6V.

Zener Breakdown in Zener Diode

When the reverse bias voltage applied to a Zener diode approaches its Zener voltage, the electric
field within the depletion region becomes strong enough to attract and remove electrons from their
valence band. These valence electrons, energized by the intense electric field, break free from their
parent atoms. This phenomenon takes place in the Zener breakdown region, where even a slight
increase in voltage leads to a rapid surge in electric current.

Avalanche Breakdown vs. Zener Breakdown

The Zener effect is predominant in voltages up to 5.6 volts, while the avalanche effect becomes
more prominent beyond that threshold. Although both effects are similar, the distinction lies in the
fact that the Zener effect is a quantum phenomenon, whereas the avalanche effect involves the
movement of electrons in the valence band, similar to an electric current. The avalanche effect
allows a larger current through the diode compared to what a Zener breakdown would permit.

V-I Characteristics of Zener Diode

The diagram given below shows the V-I characteristics of the Zener diode.

When reverse-biased voltage is applied to a Zener diode, it allows only a small amount of leakage
current until the voltage is less than Zener voltage.
The V-I characteristics of a Zener diode can be divided into two parts as follows:
(i)Forward characteristics
(ii) Reverse Characteristics

Forward Characteristics of Zener Diode

The first quadrant in the graph represents the forward characteristics of a Zener diode. From the
graph, we understand that it is almost identical to the forward characteristics of P-N junction diode.

Reverse Characteristics of Zener Diode

When a reverse voltage is applied to a Zener voltage, a small reverse saturation current Io flows
across the diode. This current is due to thermally generated minority carriers. As the reverse
voltage increases, at a certain value of reverse voltage, the reverse current increases drastically and
sharply. This is an indication that the breakdown has occurred. We call this voltage breakdown
voltage or Zener voltage, and Vz denotes it.
Procedure:-
1. Forward Bias-Zener Diode
1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with resistor.
5. The positive side of battery to the P side(anode) and the negative of battery to the
N side(cathode) of the diode.
6. Now vary the voltage upto 5V and note the Voltmeter and Ammeter reading for
particular DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode and Ammeter
reading.
8. Plot the V-I graph and observe the change.

Figure:1
2. Reverse Bias-Si Diode
1. Set DC voltage to 0.2 V .
2. Select the diode.
3. Set the resistor.
4. Voltmeter is placed parallel to Silicon diode and ammeter series with resistor.
5. The positive terminal of battery is connected to the N side(cathode) and the
negative terminal of battery is connected to the P side(anode) of a diode.
6. Now vary the voltage upto 30V and note the Voltmeter and Ammeter reading for
DC voltage .
7. Take the readings and note Voltmeter reading across Silicon diode and Ammeter
reading.
8. Plot the V-I graph and observe the change.
 Figure:2

Observation and Calculation:-

A) Reverse Bias

Sr.No. Reverse Voltage VR(V) Reverse Current IR(uA)

Calculations:-

Calculate static resistance of diode at a particular point:-

Rstatic= VF/IF Ω

Calculate dynamic resistance:-

Rdynamic= ∆VF/∆IF Ω
Result:-
1) Knee Voltage of of given diode = ............................. V

Conclusion:-

From the analysis of both forward bias and reverse bias, we can arrive at one fact – a PN junction
diode conducts current only in one direction – i.e during forward bias. During forward bias, the
diode conducts current with increase in voltage. During reverse bias, the diode does not conduct
with increase in voltage.