SEMICONDUCTOR BC556/7/8

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION .
B C

FEATURES

A
For Complementary With NPN Type BC546/547/548.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX

J
D 0.45
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _ 0.50
14.00 +
BC556 -80 F F K 0.55 MAX
Collector-Base L 2.30
BC557 VCBO -50 V M 0.45 MAX
Voltage N 1.00

C
1 2 3
BC558 -30

M
1. COLLECTOR
BC556 -65
2. BASE
Collector-Emitter 3. EMITTER
BC557 VCEO -45 V
Voltage
BC558 -30
BC556 -5 TO-92
Emitter-Base
BC557 VEBO -5 V
Voltage
BC558 -5
BC556 -100
Collector Current BC557 IC -100 mA
BC558 -100
BC556 100
Emitter Current BC557 IE 100 mA
BC558 100
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150

1998. 10. 8 Revision No : 3 1/3

 BC556/7/8

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA
BC556 110 - 450
DC Current Gain (Note) BC557 hFE VCE=-5V, IC=-2mA 110 - 800
BC558 110 - 800
BC556 - - -0.65
Collector-Emitter
BC557 VCE(sat) IC=-100mA, IB=-5mA - - -0.65 V
Saturation Voltage
BC558 - - -0.65
BC556 - -0.9 -1.1
Base-Emitter
BC557 VBE(sat) IC=-100mA, IC=-5mA - -0.9 -1.1 V
Saturation Voltage
BC558 - -0.9 -1.1
VBE(ON) 1 VCE=-5V, IC=-2mA -0.6 - -0.75 V
Base-Emitter Voltage
VBE(ON) 2 VCE=-5V, IC=-10mA - - -0.8 V
Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 150 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 4.5 - pF
BC556 - 1.0 10
VCE=-6V, IC=-0.1mA
Noise Figure BC557 NF - 1.0 10 dB
Rg=10k , f=1kHz
BC558 - 1.0 10

NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
CLASSIFICATION none A B C
BC556 110 450 110 220 200 450 -
hFE BC557 110 800 110 220 200 450 420 800
BC558 110 800 110 220 200 450 420 800

1998. 10. 8 Revision No : 3 2/3

 BC556/7/8

1998. 10. 8 Revision No : 3 3/3