Dr.S.k.

Jha
Jsnsthotiield fet Jiansistr (Fer),
elad. eat tbtnssto fET) is a %ree
AM»al (9awsele dain, sonrce and gate) semiconduct
aevice in aKiácanene candahon is byy only one tyfe

9f is alao sonetimes called he

anibrlar sansisfa,
FET

JEET MOSFET
(Tunchon-Aelol (MetalOxide. semiconduchy
Efeet Tiansistoy Relal Effeef Tiansistor)

N-channil P-Channel

Symbals -
Drnin(o) DrainlD)

N-e
gates Satey
Gak(Q) Gatela)

bsoute(s)

N- channel JFET P- Channel TFET

PogeNe.-o1(
 9D D

)
N-channel JFET
P. chann el TFET
Nota fionsi
1. Soue:- 7e ferminal thryh aich tke
mjony Camiern en ter he channel,
A calleol the soure teminal 's
7he cerent is clenofec as Ie.
2. Drain :- 7h feminal throyh shh e
came leave he channel
i called he rain teminal D'.
7L werrent is eno feol as Ln
7he crain to saerre vo/faje is calleol
'Vas and is boethve ifD' is more frihve hanS.
3. Goate:- hee are wo intemally connecfel

junchons. 7hik emhunse gpcns are caled

The wurent is leno feol as I .
K2 gate to soure vltye is cakd'Va:
4. chann el i ' The region betveen he
soze and
drainsanduiehecl bethsen he to
gates is calleol He channel.
7ha majonise camers mo ve
fron sare to drin hiyk this chammel.
 berations;
() N- Channel JFETi
D

Vos
Vas

(0 Khen nectkr any bia css abßlieo to te gate

ie. Jke Vos =0) nor any oltye to he drain
a.r.t. Srrre (ie. when Voro), He defBletion
Epons arnd tha
he PNjunchns arc feal
heclene and symmetical.
) when porhve volfaye is apslies o the drain
feminal'p'co.r.t. Soune femninal s' aihout
coneehnyegate feminal G' to subb
mgjnt cams elefrnsfofn eminal
s to feminalD' kuas lrain erent I
Due to oo f his curent, the is
acroK channel. Ths
retre biases te diocle. he ga
moc neyabre, aik esfef to ha bants cn the
clannel Ktick ace nearer o'B han o's. Nhen Yoe
he elye-shafedl dplin gjos are
ormedl.
 inoeaed, clplhin ys meetat he cente, and
Ku dain curent 'I ut-f cembaely.
bias to hegak is

caumy cleereaye in eristante and hrefre

Jealusel
increase cn dran cunent :
Pinch-f voltye (e) i- jale-sare ainvolaye
unent
V at akieh

binch-f voltaye (Ve)

ofhu transisfr,
Notei ’ 7o avoidl bumigsedl
Vao snof
P-channel JFET: - 9f obera te in he same mamey
(3)
as an Nchannel TFET excebt
channel ceerent camies cill be Me holes tn
Kat of Vor and
blaee of eleebns and e bolarheg
Vas are reresed.
Chara chenishs f JFET -
() VZ r Outbut or Drain charackishs -
dran beteen drain urent I and daiSOUNe

baramek is calleol he rain charackir .

Pinch-ofP Brakdam
Saurehon eion rion

Drain
winent

Ver
Vos Cv)
volhaye
Drain to saune
For small afslird oltye Vps restr and
bar ak as a Ginßa emicenlctor

becaue in is jn ta FET beaves like an

rlinary reHstor. gion fk charactenshy in
72 rneins cntant u calea
shich rain curenfI
te binch- fryjon r sahrabn reon or ambifer
his rrion he FET OBeats, as a inutant
yion In
clrent dtice nce drain unent (r utfut uwen)
remaing alm atensfant.
7Re drain uument in he binch-f?
rfred fo he drain sace
sahrahm unt oas
 Drain ement in te pineh-off pion ghen
by SKeckley's eyuahon as
Vas
anod Ip = BslI- VasVoastoFÐ
she aot he gate- Soune
cit-ff volteye
9f Vpe is contiute incrcased, 2
Shye Comes kn thgate kanneljunchon
brcakdn. Thcs habbes beiawse h
carms making
TXegat chathelgunehon accelsate t a
veleceby and brodue an aralanche efeet.
Thus an crlinary
FET beayes as
as a cnstant cuneh
olinay
Soune in binch-forsaturahon ion and as
Cmstant ntape in breakdoM jon.
(3) Tranfer charactenshsi behveen Mcunve is ploteel
gae-surte
dain urent Iz asth Vog Conetant
veltage. Vosas nd
Ioss

prain
uent
VooscoFF)

Vas v)
Gate to saurte voltye

Pgen.-o6|
 94 i obsevedd Kat
G) rain u n t deCreases aith he chtrcate
-Ve gale -saune bias,

iis rnin cument, =0 whn Vos Ko

he main dyaobaekbroduet p JEET ik
gain- bandundtk and
Telahire Small en its
cks Kandlng.
susceßkbeleby to damye :
greater lons volAye gains bcaue ofif Small
TFET ®as 8IT.
bansconducfance and hea cst Kan Kat
FETas Volye Variable Renstr (vVR t
a loie
wsually oerafeel in He cmstant urent
hat is
borhon f itsoutsut caacfershes. But fit
inch- f
is beratkl on th repin norlltobehave
lie.whee Vos s SoalL), it as a
volpe - arnable eHsfor(VVR).
gion dain foo soaue eHstane
Rpe Can
tn thus
Ke bas llye Vors
be Contrlel 6y ayinp. aßblicahons
Zn su ch he FETiS
also rfered to asavoligpe eßendat sens torvDB.
Soune Drain

+ Dejakon
Yos
 Vas volpe bias
myk fbro fculfy
to cunent
as channel.drain He
M
ohe,
SO eaeh toueh meetor tenol
to Layus
lflehon boK time aelieved
Hat Volhye
ch-f pin chen ie. time some At
deareased.
nocaseol beil unent ain Heand
witee layrs depahon boh f
colth aying,
e sVos
channel. hrngk
tK cs Plos nll cument
lran aresnall
ha
and
both small, isVos wknTnithaly,
Compavis orn of BIT and FET (IFET) :
BIT JFET
1. 9t is Bipolar unchom| 1. 9t is Tunction Fietol
Transistor Efeet Transisto
&. Prein
Colleeb
Bate o
-

Emter
(NPN Transistor) Soune
CN-channed TFET)
3. 94 is a curen t 3. 9 is a voltpe operatet
Operateod dlwice. lwice
4. 9} Kas ho o 4. 9# Kas hipk Input
Input Inpecance Imbedance ordu
orol f1k
5. In t, cument is S. Io it, curent is tamied
cameol 6y botR aames
eleefrns and hes. eiha Eletios oog Hols
|6. Regiures m ore 6. Requirce ls area on
area. silicen chib.
7: operation is sloco. 7. Fas fer han BIT
&. barpe vaniathon 8. kes warniahon from
fim Transistoy Fransis te to
to Transisto Transisto
 MOSFET i- Metal oxida semiconduetsell
efect ansistos
9t is cersfuc fed anhh he
gate eminel innlated fm Ke channel, so cf
is somet'mes calleol insela keol gak FET (IGFET)
S is also a Kree feminal
(saune, gate and drain) deice and drain ument cn it
s ako cmsollecl by gek beas

MOSFET

Depletion bhe 9SFEr Enhancement tybe MaSFET

(D-MOSFET) (E-MFET)
1
n- channel B-channel n-channel p-chanmel
D-MOSFET D -MaSFET E-MOSFET E-MOSFET
Drain Drain

ubshak
Gate o
Gate
Sourte
Soyne

Fyi: Nchannal Deßletion fe asfeT

Drain
Drain

Gak Gatk
Sourte
Sauc

FyAi Pchannel Deßlehon tye 120sFer

 Drain
9Drain

rosubshak

Ghate
hak
Sourte Sate

Ag3: N- channel En Kancement tybe MasfET

Drain

to Substhate
qat Goat
Sourne

hy:P-channel Enkancement tfe 0SfET

B. why the chamel fa TYeT a never Combahly
clseel at te drain end?
soly?:- 9f he ehannel is cemmfleely clsel in JFET
hen there arll be no drain curent, so here
all be no voltege. dsaf along K channel
lenyth and anaunt f reveae beas ill beime
unifom and wee-shaßea opleion gon
ane beme recfanpulan one .

sol- etFT Kas

inßut
vesy Kyk cinbut imfedane beeause
cenuit(gae to sare) is severe biand
anol he cnut gete curent is vey Small
(of he ordn of feus nanO
ampere)
Operahons fN- channel DMosferL mosfET --

T
etayahon

N-chann tidutc

Ptyhfubtak Tndud
hyipeplahon Mode Fy: Enkancemunt Mode
(D-MosFEr) (E-MoSFET)
okn gate is boihre. soth refeut fo the
Saurre, ct heraks in h enhance ment or E-mode
and wn
kun ha gate is ngakie o.rt. te saurce, t
oferates in lplethn mcde
shen he dain ir made t e antt rept
to sar e, a lrain urent ael Ps even arith seo gate
botentl and th 9oSFET is sal to be ferahry in éede
In this mode f ferabon gate attraeh h k chanpe
camers fom he Psubttat o he Nchannel and th
rcduees he channel reisance and increau he rain
cument, ha more baihre h gate isis made, hu more
drain urent dfar.
Kho hgake is made e cath resfeutto
Seme fha -e charpe
camier3 ut the - channel. Tig ceate a
in the chanel, Herefore, ¿ncorteses ta clannl
rCstance anol cluees he lain urent. T more
fyahn he lerice is rcfereel to as a afbon
2le 90SFET. Here fo meck nepahire j t olhye
kannel. isu fyahom is similar
can binch-ff ha channel.
Combaison of TFET and Mos FET ;-
JFE T MaSFET
. 94 is Junchon feld 1. 9} is Metal Oxi de
¬ffeet TFansisto Semilo ductr Feld
Effeet Tianstto.
fDrun Drain

Gati
Gate
Source
Sourte
CN-Chanmel TFET) (DEMOSFET N- Channel)
3. 9+ requies ls area 3. 9/ reguircs leart
area
Silicon chib. on silicn chib.
More MosFET: ber Ie.
|4. Oberason is Fas fer . Fastes t oberahon
5. ess Variaton frm5. beast anah'om fam
Transisfor to Transishr Transistr to Fantistr
6. 9 is a Voltage. 6. 94 is also a volye
Operaked deice. oberad dice
7 Higk Inkut Inbdane 7 Hjyh Lnput Jmkedane
more Kan TFET
e. Curent is camel 8. Cuent is cameol
"ajonty
Came chve Elebu eithin Eletsens oHels
or Halas
 dampe to
becaue damape to
more is sucebhble
is 9#9 u. ls is 94 |1.
Manufahip
poes froces10.Manufaetunit
EnKantement
moole mededalebon
cd
anmode dufleho in
both oberates
in oferates
9t 9. only 9f 9.
MOSFET JFET
 Combanison between Dehleion MosFET andd Ehantement
MOSFET:

Depefien eSFET Enhancement MasfET

1. 94 is knou as D-MoSfET | . 94 is knoN as E-MFET
9/ can be s eol a ei 9} can not be weol
E-M0sFET as D-MasFET

3. Cha nnel is
alrcacy 3. Inihally channel is
exis t betwe sOurce not exrt betwcen
and crain. Soure and lrain

4. Size and Cost more 4. Sige anol Cost l u

5. 9f Vos =o volh, Ip anle 5. 9f Vos0 VolB, Ip w
toco ale to Vo>oN Sfale

6. Deplehin chann et 6. Lnduced channel

MoSFET as Capaei fav (0s capaetr) :

Gate.
Metal

Semicomdueter

Mos Cabaifer is male ofa semicmdahy

o subsfrate, an insula and a metal
knon af gate. (Pyeo.is
 Melal oa gate elehode can be tellared éy
boly sili con. TKe lieleetric naten'al sel behvan
e caßeeihr plates is slicon ioxile (Sio,). Metl
acts one
slate. f ha capaitr and he semi ndudt
as one
Eayer aef as anokn plate
7he cabautance f ha aoS cabaih
on te gak kminal.
Thie mocles of oferatonei-
cùAcemulatiem:- (Vo 4 VeB)
Mode
9 ocu fer negabire voltee
kent te nepahve charpe n ha gate etraat
Kols fosr te substate to tk oxicle- senilondut
cinfe rfae. Ke aulaton
and dlytlhn efin to as te flat
banol voltye VEB
iis Deplehon Mode ; - Veg< VG < V
9t ocux fer poihre volap4.
A pothve chaye n he
Kales into the gubsate.
gake puikes the mobile
andth
in Create arih èn crasp gate vo/ye.
(is Invexsjn Mode;- (V<Vo,)
9f ocuen at roltyes beyond
ke threshold volfpe (Vrj.
flemengnih Cames hat are atraeted to the
in ferfae e 6y h farhre gate voltape.
Capaitanee
High Cmax

capaitunet Cmin
Gate voltye
Invet on Deplehan AceumuLabo
 Numericals

&I. whern a revene

revee vollape of tov it afplrdlbetwan
Jate and saute f YET M gale uurent s
Ooo1 A Detemine etctance behven gate
and serte.
Sali Here,
So, Gak to Sure retsfance ts
Vos 10,o 0o M

&l. kohn rain -saute vollape ir chanped byy.5mhs,

Ke change en rain uneb is of st% n, he.
Jate- stherce volfape remaining. unehangeol.Detemine
Here, AVor = 15V, AI, = 2oXI0 A
So, nc rain reistance of ha TFET
=AVor =/25KL

l4 mn
83. In a JFET ta dain cuenl changes fms vanjed
to 15mA shen hegate to sUYte
from-RSV to - 4/o V, KeeßingKe drain - saUne vollye
Constant. Determine he transconductance fer tha.
given TFET:

Vast
So, 7ans condec fance is
O3mA
AVos
 channel JFET
B4. for an W-
I t = 87 mR, = -3Y, Var -1v

) Drain crent 's

-3866 mA

-Xg.7 mA
- 3V

(i) Transcen due fance s

= 3.8<7 mA/v
ss/l- )
B5. An N-channel E- 90S FET Kas he follouing
baramefs:

Dekmine he drain curent n %ca 6v

solu?: le kn oco hat

Ka LoconJ
Vascon) - Vasr)
= 0.312s mAly
(8-4)
Nas lain urent is
Yarr)
03/2S (6- 4)"
=|2S mA

ayen.-18
 Model Eueshons

&i. Exklain the oferahon fN. channel

JEET h he lk liagrm
&i. Exslain Kuhu oßerahon
JEET sh heoperahon
f p channel
Kelß f liagram.
co3. Exblain VI characterishes
cn oetei! ofTFET
&4. Explain bineh- ff vollage and drnin
characknshu IFET.
85. Exblai'n bransfer charncfernshe fTFET
n cetail.
B6. way he infut cinbeclance fFEr is
hn Kan BIT? what are abslrahons
f TEET and MOSFET dwices.
&7. Exflain hous FET is aring as oltye
vanable reHstr (vvR).
&8. Compare BIT, TEET and A oSFET.
Also cembare He entance met anol
aleslbie MOSEETS e all kara meks.
o9. Ob fain he erfreion fr he binch-ff
Volpe Vs in he case Nchannel TFET.
&to. Exslain MSFET aek as a caba te
wth all thre mocles in bef.

Pyeo.-o1
 06jechive Buestions
JNIT-1Z
&1. 7he oberation ofa JFET involves
(4) How f majoity camen
(6) floco f minorg camers
CC) Hos f boh cam'en
ne f he above
(ol) none
Ens - (a)
Soune voltape at hich dain
Be. 75e dain- neartyconsfant is called
curent becmes
6)breakdoam volhage
(2) bamier voltepe
ce) pick-off voltgpe pineh- f volhege
device
&3. FET ss afollouing
Unibolar c) Both d None
(4) Bibolar b
(b)
biasel, TFET wil act as a
a prßerly
&4. Incurent contolled iument Saurze
a)
comtnlled voltee Sur e
(b) voltae ccerent sauce
CE) voltepe contolleel
SUYCe
d) cuerent contnlleel olye
Ans!-(c)
QS, - channel FET are uberior to P-channel
FET: becate f
ca) hair pk input iafedance
Cb) Hecr k saitehing. time
cc) les bower consumbhon comfanison
to Kat f hales.
ansi- (ol)
 B6. K infet gek cement fa FET is f e orla of
(2) few micD po amfereg
(e) feo mil- amferes
as!- (6)
racback f
&7. TFET Kas main
a) Kaving loo ioput inßedance

Kavcing Small gain- bandrdth prodat

(
Ans!- (d)
&8. MosFET has inbul cnfeclance f
(a) 1oo M

&9. M0SFET s sed a

(6) cafarit cy Inducfr None
(2) Resist
a s - (6)
modlam eleebnic mulhime fers a
fET
Bio. In because
MoSFET i breferel over BIT
cnfut reHs tance i Kyk and loes not
(6) ch
vany anK Ke chaype g rage
( it i cheaßer
as!- (a)
which of Ke folloanine. tansisos car be eseel
&I1. in E-mole ?
2) TFET (6) MOSFET CC) N-PN transistar eUTT
s-cb)
 AssrGN MENT-1
SuB: EDC
Faculty 'ç Name :Dy faptosK kumar Jha
&i. Exblain Static vestan te and dynamic reistance
fa o'oole in detal
&2. Describe Difhuion caßauitfante and transihm
caßeeitan te in brief.
&3. Exblain V-I charackerishs fa PNJunchon
liocle aith a neat skefeh.
Q4. Diferen hate foroarel seeovey tme and
recovery time fa dode in brief.
rereee recovey
RS. wkat is Break lom in iode ? Diferenhale
between Avalanche breakdn and Zener
breakolon.
ds. what is a dioole ? Dfeunhat P type andl
N tyhe semicanclucfot.
&7. Deemine dynanic (ac) reeisfnce for a bias
Semiconluetor diode Kavng a froard
Qo0mV and revers sahurahon crent f
1eA at om temperature.
 AssIGNMENT-2
SuB: EDC
&1. Faculty's Name: Dr Santash kumar Jha
Explain the operatton f bransistr in ce
( common Emitter) cnftahon. Also lescibe Ke
V-I eharactenshe f a tansitr in Cegm on -
emitter cmfpuraken in bnf.
&e. Explain how FET is weing as Volye vaiable
Jeistor (vve).
83. Exblain Ki binusl feahon f Varactr
diode and ED.
B4. In a certain transistor, colleety enent is 098nA
Qnd bate rent is 20uA.
Detkmçne He telue
i) e i Her ceenent iD cuient ambefakon faeor
and ii) curentJain faetor.
B5. Fr an N- channel JEET
Zoss P7 m, Vo= -3V, Vor - V