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Eeeg 211 2014

The document is an End Semester Examination for the course EEEG 211 at Kathmandu University, consisting of multiple-choice questions and descriptive questions. It covers topics related to diodes, transistors, amplifiers, and operational amplifiers, with a total of 20 questions in Section A and 5 questions in Section B. The exam is designed for B.E./B.Sc. students in their second year, first semester, with a total duration of 2 hours and 30 minutes.

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18 views3 pages

Eeeg 211 2014

The document is an End Semester Examination for the course EEEG 211 at Kathmandu University, consisting of multiple-choice questions and descriptive questions. It covers topics related to diodes, transistors, amplifiers, and operational amplifiers, with a total of 20 questions in Section A and 5 questions in Section B. The exam is designed for B.E./B.Sc. students in their second year, first semester, with a total duration of 2 hours and 30 minutes.

Uploaded by

biplabimaharjan8
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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KATHMANDU UNIVERSITY Marks Scored:

End Semester Examination[C]


2014

Level : B.E./B.Sc. Course : EEEG 211


Year : II Semester: I

Exam Roll No. : Time : 30 mins. F.M. : 20

Registration No.: Date :

SECTION “A”
[20 Q.  1 = 20 marks]

Choose the most appropriate answer.


1. Small signal resistance offered by a silicon diode when forward biased by ID current is
______ at room temperature.
[a] 10mV/ID [b] 26mV/ID [c] 50mV/ID [d] 60mV/ID

2. When a diode is forward biased by a potential of vD, the current iD, that flows through the
diode is given by ____________, where IS is the reverse saturation current and VT is thermal
voltage.
 vT   vD   vD 
 
v  
I 
  
V 
[a] iD  I S e VD 
[b] iD  I S ln  D  [c] iD  VT e  S  [d] iD  I S e  T 
 vT 
3. Ideally, the potential drop across a forward biased diode is ____________ volts.
[a] 0.1 [b] 0.2 [c] 0 [d] 0.7

4. Zener diode has ________________ volt-ampere characteristics.


[a] linear [b] exponential [c] parabolic [d] hyperbolic

5. In a series combination of a diode and a capacitor, when the output is taken across diode it is
called ____________.
[a] doubler [b] clipper [c] clamper [d] peak detector

6. An ideal Current Controlled Voltage Source (CCVS) has ___________.


[a] infinite input impedance, infinite output impedance
[b] zero input impedance, zero output impedance
[c] zero input impedance, infinite output impedance
[d] infinite input impedance, zero output impedance

7. The dual of CCVS is __________.


[a] VCVS [b] VCCS [c] CCCS [d] CCVS

8. Amplifier ____________ has distortion. K is linear factor, Vo is the output voltage and Vi is
input voltage of the amplifier.
[a] Vo = KVi [b] Vo = 100KVi [c] Vo = 2+KVi [d] Vo = KVi4
9. In a Bipolar Junction Transistor (BJT) Ic =  Ib is valid for __________region(s).
[a] active [b] saturation [c] cut-off [d] saturation and active

10. The relation between  and  in a bipolar junction transistor is given by _________.
1  1 
[a]   [b]   [c]   [d]  
1 1 1 1 

11. Which of the following characteristics best describe an ideal amplifier?

[a] [b] [c] [d]

12. Which of the following region of operation will produce less distortion in an amplifier?
[a] linear [b] saturation [c] cut-off [d] triode

13. In an E type N channel MOSFET triode region is given by ___________.


[a] VDS ≥ VGS −Vt [b] VDS < VGS −Vt [c] VDS ≥ VGS +Vt [d] VDS < VGS +Vt

14. In general, the voltage gain of an amplifier is given by ______________.


[a] source load/drain load [b] drain load/source load
[c] source load/(2  drain load) [d] drain load /(2  source load)

15. Saturation region of bipolar junction transistor is analogous to _________ region of MOS
transistor.
[a] active [b] cut-off [c] triode [d] saturation

16. In general, the voltage gain of a common source (CS) amplifier is given by ________, where
RD is the drain resistance and RL is external load resistance.
[a] -gmRL [b] -gmRD//RL [c] -gmRD/RL [d] -gm/RL

17. The conduction angle of an amplifier in class A configuration is _________degree.


[a] 90 [b] 120 [c] 180 [d] 360

18. ___________ amplifier is most power in-efficient.


[a] Class A [b] Class B [c] Class C [d] Class D

19. In a Darlington pair amplifier the composite  is given by _________.


[a] 1   2 [b] 1   2 [c] 1   2 [d] 1 /  2

20. The CMRR of an ideal operational amplifier is _________.


[a] 0 [b] 1 [c] 100 [d] infinity
KATHMANDU UNIVERSITY
End Semester Examination [C]
2014
Level : B.E./B.Sc. Course : EEEG 211
Year : II Semester : I
Time : 2 hrs. 30 mins. F.M. : 55
______________________________________________________________________________
SECTION “B”
[5 Q.  11 = 55 marks]

Attempt any FIVE questions.


Assume suitable data where necessary.

1. a. Draw and explain the operation of peak detector and clamper. [6]
b. Design a diode function generator with explanation to convert a triangular wave into an
approximate sine wave. [5]

2. a. What are G, H, Y and Z amplifiers? [4]


b. Obtain the bandwidth of the network in fig. 1. [7]

Fig. 1
3. a. Draw the simplified physical structure (showing holes and electrons) of PNP transistor and
explain the current flow in the device. [4]
b. Draw and explain the voltage transfer characteristics of a CE amplifier. [5]
c. Derive the relation between Ic and Ib in a bipolar junction transistor. [2]

4. a. Design a common source (CS) amplifier using N channel Enhancement type MOS
transistor with Vt = 1V, K=1 mA/V2 to operate at IDQ= 1mA and VDGQ = 10V with VDD =
20V. Determine its voltage gain. [5]
b. With complete voltage transfer characteristics show the cut-off, active and triode region of
a MOS amplifier. [6]

5. a. Derive an expression for the efficiency of class A amplifier. [4]


b. Design a class B amplifier to deliver 10 watt power into a load of 10Ω. [4]
c. Why is the efficiency of class A amplifier always less than that of class B amplifier? [3]

6. a. Show that the differential amplifier has hyperbolic tangent characteristics. [5]
b. Design an operational amplifier based non-inverting amplifier for a voltage gain of 5. [3]
b. Write three characteristics of an ideal operational amplifier. [3]

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