SS24FSH – SS220FSH

Taiwan Semiconductor

2A, 40V - 200V Schottky Barrier Surface Mount Rectifier

FEATURES KEY PARAMETERS
● AEC-Q101 qualified PARAMETER VALUE UNIT
● Low power loss, high efficiency
IF 2 A
● Ideal for automated placement
● High surge current capability VRRM 40 - 200 V
● Moisture sensitivity level: level 1, per J-STD-020 IFSM 50 A
● RoHS Compliant
TJ MAX 150 °C
● Halogen-free according to IEC 61249-2-21
Package SOD-128

APPLICATIONS Configuration Single die

● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter

MECHANICAL DATA
● Case: SOD-128
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002 SOD-128
● Meet JESD 201 class 2 whisker test
● Polarity: Indicated by cathode band
● Weight: 0.028g (approximately)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

SS24 SS26 SS210 SS215 SS220
PARAMETER SYMBOL UNIT
FSH FSH FSH FSH FSH
Marking code on the device 24FSH 26FSH 210FSH 215FSH 220FSH
Repetitive peak reverse voltage VRRM 40 60 100 150 200 V
Reverse voltage, total rms value VR(RMS) 28 42 70 105 140 V
Forward current IF 2 A
Surge peak forward
t = 8.3ms 50 A
current, single half sine-
IFSM
wave superimposed on
t = 1.0ms 145 A
rated load
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C

1 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

THERMAL PERFORMANCE
PARAMETER SYMBOL TYP UNIT
Junction-to-lead thermal resistance RӨJL 18 °C/W
Junction-to-ambient thermal resistance RӨJA 75 °C/W
Junction-to-case thermal resistance RӨJC 16 °C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
IF = 1A, TJ = 25°C 0.40 - V
IF = 2A, TJ = 25°C 0.46 0.57 V
SS24FSH
IF = 1A, TJ = 125°C 0.34 - V
IF = 2A, TJ = 125°C 0.40 0.56 V
IF = 1A, TJ = 25°C 0.50 - V
IF = 2A, TJ = 25°C 0.60 0.70 V
SS26FSH
IF = 1A, TJ = 125°C 0.44 - V
IF = 2A, TJ = 125°C 0.54 0.62 V
IF = 1A, TJ = 25°C 0.66 - V

(1)
IF = 2A, TJ = 25°C 0.76 0.85 V
Forward voltage SS210FSH VF
IF = 1A, TJ = 125°C 0.57 - V
IF = 2A, TJ = 125°C 0.62 0.76 V
IF = 1A, TJ = 25°C 0.75 - V
IF = 2A, TJ = 25°C 0.81 0.95 V
SS215FSH
IF = 1A, TJ = 125°C 0.61 - V
IF = 2A, TJ = 125°C 0.67 0.80 V
IF = 1A, TJ = 25°C 0.78 - V
IF = 2A, TJ = 25°C 0.84 0.95 V
SS220FSH
IF = 1A, TJ = 125°C 0.63 - V
IF = 2A, TJ = 125°C 0.71 0.89 V

SS24FSH TJ = 25°C - 200 µA

SS26FSH TJ = 125°C - 40 mA
Reverse current
(2) IR
@ rated VR SS210FSH TJ = 25°C - 10 µA
SS215FSH
SS220FSH TJ = 125°C - 5 mA
SS24FSH 124 - pF
SS26FSH 95 - pF
Junction capacitance SS210FSH 1MHz, VR = 4.0V CJ 61 - pF
SS215FSH 48 - pF
SS220FSH 39 - pF
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms

2 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

ORDERING INFORMATION
ORDERING CODE(1) PACKAGE PACKING
SS2xFSH SOD-128 14,000 / Tape & Reel
Notes:
1. "x" defines voltage from 40V(SS24FSH) to 200V(SS220FSH)

3 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance

3 1000
SS24FSH
AVERAGE FORWARD CURRENT (A)

SS26FSH
SS210FSH
SS215FSH

CAPACITANCE (pF)
2 100 SS220FSH

1 10

f=1.0MHz
Vsig=50mVp-p
0 1
25 50 75 100 125 150 1 10 100
°
LEAD TEMPERATURE ( C) REVERSE VOLTAGE (V)

Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics

100000 10 10
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)

SS24FSH TJ=150°C SS24FSH

10000 UF1DLW
1 TJ=150°C
TJ=125°C
1000 T =125°C
TJ=125°CJ TJ=25°C
1 0.1

(A)
TJ=25°C
100

10 0.01 TJ=-55°C
Pulse width 300μs
TJ=25°C 1% duty cyclePulse width
1 0.1
0.001
10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)

Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics

100000 10 10
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)

SS26FSH SS26FSH
10000 TJ=150°C
UF1DLW
1
1000 TJ=150°C
TJ=125°C TJ=125°C
1 TJ=25°C
100
(A)

0.1 TJ=125°C
TJ=25°C
10

0.01 TJ=-55°C
1
Pulse width 300μs
TJ=25°C 1% duty cyclePulse width
0.1 0.1
0.001
10 20 30 40 50 60 70 80 90 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)

4 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics

10000 10 10

INSTANTANEOUS FORWARD CURRENT (A)

INSTANTANEOUS REVERSE CURRENT (μA)

SS210FSH TJ=150°C SS210FSH

1000
UF1DLW
100 1
TJ=150°C
TJ=125°C
10 TJ=125°C
TJ=125°C TJ=25°C
1 0.1

(A)
1
TJ=25°C
0.1
0.01 TJ=-55°C
0.01 TJ=25°C Pulse width 300μs
1% duty cycle
Pulse width
0.001 0.1
0.001
10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)

Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics

1000 10 10
INSTANTANEOUS REVERSE CURRENT (μA)

INSTANTANEOUS FORWARD CURRENT (A)

SS215FSH SS215FSH
TJ=150°C
100 TJ=150°C
UF1DLW
1 TJ=25°C
10 TJ=125°C
TJ=125°C TJ=125°C
TJ=25°C
1 1 0.1

(A)
0.1
TJ=-55°C
0.01
0.01
TJ=25°C Pulse width 300μs
1% duty cycle
Pulse width
0.001 0.1
0.001
10 20 30 40 50 60 70 80 90 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)

Fig.11 Typical Reverse Characteristics Fig.12 Typical Forward Characteristics

1000 10 10
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)

SS220FSH TJ=150°C SS220FSH

TJ=150°C
100 UF1DLW
1 TJ=125°C

10 TJ=125°C TJ=125°C
TJ=25°C
1 0.1
(A)

1
TJ=25°C

0.1 0.01 TJ=-55°C

TJ=25°C Pulse width 300μs
1% duty cycle
Pulse width
0.01 0.1
0.001
10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)

5 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)

Fig.13 Typical Transient Thermal Impedance

100
TRANSIENT THERMAL IMPEDANCE (°C/W)

10

0.1

0.01

0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100

PULSE DURATION (s)

6 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

SOD-128

SUGGESTED PAD LAYOUT

MARKING DIAGRAM

P/N = Marking Code

YW = Date Code
F = Factory Code

7 Version: B2103
 SS24FSH – SS220FSH
Taiwan Semiconductor

Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.

Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.

Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.

8 Version: B2103