BFR949T

NPN Silicon RF Transistor

For low noise, high-gain broadband amplifiers at 3

collector currents from 1 mA to 20 mA

f T = 9 GHz
F = 1.0 dB at 1 GHz
2
1 VPS05996

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package
BFR949T RKs 1=B 2=E 3=C SC75

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 10 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 1.5
Collector current IC 70 mA
Base current IB 7
Total power dissipation Ptot 250 mW
TS  75°C 1)
Junction temperature Tj 150 °C
Ambient temperature TA -65 ... 150
Storage temperature Tstg -65 ... 150

Thermal Resistance
Junction - soldering point 2) RthJS
300 K/W

1T is measured on the collector lead at the soldering point to the pcb

S
2For calculation of R
thJA please refer to Application Note Thermal Resistance

1 Oct-24-2001
 BFR949T

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 10 - - V
IC = 1 mA, IB = 0
Base-emitter forward voltage VBEF - - 1.05
IE = 25mA
Collector-base cutoff current ICBO - - 100 nA
VCB = 10 V, IE = 0
Emitter-base cutoff current IEBO - - 0.1 µA
VEB = 1 V, IC = 0
DC current gain hFE 100 140 200 -
IC = 5 mA, VCE = 6 V

2 Oct-24-2001
 BFR949T

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency fT 7 9 - GHz
IC = 15 mA, VCE = 6 V, f = 1 GHz
Collector-base capacitance Ccb - 0.31 0.4 pF
VCB = 10 V, f = 1MHz
Collector-emitter capacitance Cce - 0.2 -
VCE = 10 V, f = 1MHz
Emitter-base capacitance Ceb - 0.6 -
VEB = 0.5 V, f = 1MHz
Noise figure F dB
IC = 5 mA, VCE = 6 V, ZS = ZSopt ,
f = 1 GHz - 1 2.5
IC = 3 mA, VCE = 8 V, ZS = ZSopt , - 1.5 -
f = 1.8 GHz

Power gain, maximum stable 1) Gms - 20 -

IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available 2) Gma - 14 -
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Transducer gain |S21e|2
IC = 15 mA, VCE = 6 V, ZS = ZL = 50 ,
f = 1 GHz 13 16 -
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , - 11 -
f = 1.8 GHz

1G = |S21 / S12 |
ms
2G = |S21 / S12 | (k-(k2-1)1/2)
ma

3 Oct-24-2001
 BFR949T

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

IS = 4.36 fA BF = 120 - NF = 1.085 -

VAF = 30 V IKF = 0.152 A ISE = 1.86 pA
NE = 1.998 - BR = 33.322 - NR = 1.095 -
VAR = 41.889 V IKR = 0.063 A ISC = 3.68 pA
NC = 1.569 - RB = 20.766
IRB = 72.2 µA
RBM = 0.823
RE = 0.101 RC = 0.849

CJE = 291 fF VJE = 0.586 V MJE = 0.456 -
TF = 8.77 ps XTF = 0.00894 - VTF = 0.198 V
ITF = 1.336 mA PTF = 0 deg CJC = 459 fF
VJC = 1.048 V MJC = 0.334 - XCJC = 0.217 -
TR = 1.39 ns CJS = 0 fF VJS = 0.75 V
MJS = 0 - NK = 0.5 - EG = 1.11 eV
. - FC = 0.924 - TNOM 300 K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)

Package Equivalent Circuit:

C4 L1 = 0.762 nH
L2 = 0.706 nH
C1
L3 = 0.382 nH
L2 L3 C1 = 62 fF
B’ Transistor C’
B Chip C
C2 = 84 fF
E’
C3 = 180 fF
C6 C5
C2 C3 C4 = 7 fF
L1
C5 = 40 fF
C6 = 48 fF
E EHA07524
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes

4 Oct-24-2001
 BFR949T

Total power dissipation Ptot = f (TS )

300

mW

200
Ptot

150

100

50

0
0 20 40 60 80 100 120 °C 150
TS

Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load

Ptotmax/PtotDC = f (tp )

10 3 10 2
Ptotmax / PtotDC
RthJS

10 2 10 1 D=0
0.005
D=0.5 0.01
0.2 0.02
0.1 0.05
0.05
0.1
0.02 0.2
0.01 0.5
0.005
0

10 1 -7 -6 -5 -4 -3 -2 0
10 0 -7 -6 -5 -4 -3 -2 0
10 10 10 10 10 10 s 10 10 10 10 10 10 10 s 10
tp tp

5 Oct-24-2001
 BFR949T

Collector-base capacitance Ccb = f (VCB ) Transition frequency fT = f (IC )

f = 1MHz
VCE = Parameter

0.6 10
10V

8V
pF
GHz

0.4
Ccb

fT
6 5V

0.3

3V
4
0.2 2V
1V
2
0.1 0.7V

0 V 0
0 5 10 15 25 0 5 10 15 20 25 30 35 mA 45
VCB IC

Power Gain Gma , Gms = f(IC ) Power Gain Gma , Gms = f(IC )
f = 0.9GHz f = 1.8GHz
VCE = Parameter VCE = Parameter

22 16
10V 10V
8V 8V

dB
5V
5V dB

3V
3V
G

16
2V

2V 8

13

1V

4
1V
10
0.7V

0.7V

7 0
0 5 10 15 20 25 30 35 mA 45 0 5 10 15 20 25 30 35 mA 45
IC IC

6 Oct-24-2001
 BFR949T

Power Gain Gma , Gms = f(VCE):_____

|S21|2 = f(VCE):---------
f = Parameter

25
IC=10mA
0.9GHz
dB

0.9GHz

1.8GHz
G

15

1.8GHz

10

0 V
0 3 6 12
VCE

Power Gain Gma , Gms = f(f) Power Gain |S21 |2 = f(f)

VCE = Parameter VCE = Parameter

45 30
IC=10mA
dB IC =10mA
dB

35
|S21|2

30 20
G

25
15
20

15 10

10 10V
5V 5 10V
5 5V
1V
1V
0 GHz 0 GHz
0 1 2 3 4 5 7 0 1 2 3 4 5 7

f f

7 Oct-24-2001