TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\.

06/25/2019

Version 130A
May 3, 2011
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Standard I/O Library
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TSMC 40nm
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Databook
 TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019
TS
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Copyright c 2011 Taiwan Semiconductor Manufacturing Company Ltd.
All Rights Reserved
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No part of this publication may be reproduced in whole or part by any means without the prior
written consent.
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NOTICE

Taiwan Semiconductor Manufacturing Company Ltd. reserves the right to make changes in the
contents of this document without notice. No responsibility is assumed by Taiwan Semiconductor
Manufacturing Company Ltd. for any infringements of patents or other rights of the third parties
that may result from its use. Taiwan Semiconductor Manufacturing Company Ltd. assumes no
responsibility for any error that appears in this document.
Table of Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.1.1 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

2.1.2 Characterization Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TS 4
2.2 Timing Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2.1
M
Transition Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2.2
C
Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
C
3 Cell Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
on 9 6
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4
fid 7
Simultaneously Switching Output Driving Factors . . . . . . . . . . . . . . . . . . . . . . . . . . 11
bi

4.1 Terminologies and Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

en 46 ic
en 06/

4.1.1 Simultaneously Switching Output (SSO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1.2
tia
Simultaneously Switching Noise (SSN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9
t\

4.1.3 Driving Index (DI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

lI
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4.1.4 Driving Factor (DF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

nf
i

4.2 DF Values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
en 19

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5 Datasheet Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1
at
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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5.2 Cell Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5.3
n
Leakage Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
In

5.4 Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

c\

5.5 Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

.

5.6 Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6 Design Kits Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

7 Contact Us . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

8 Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8.1 PCI33DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
8.2 PCI33SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
8.3 PCI66DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
8.4 PCI66SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
8.5 PCLAMP1ANA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

ii of 253
 Table of Contents

8.6 PCLAMP2ANA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.7 PDB02DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
8.8 PDB02SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
8.9 PDB04DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
8.10 PDB04SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
8.11 PDB08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8.12 PDB08SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
8.13 PDB12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

8.14 PDB12SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
TS
8.15 PDB16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
8.16
M
PDB16SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
8.17
C
PDB24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
8.18
C
PDB24SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
8.19
on 9
PDD02DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
A

8.20 PDD02SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
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fid 7
8.21 PDD04DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
bi

8.22
en 46 ic
PDD04SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
en 06/

8.23
tia
PDD08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
9
t\

8.24 PDD08SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
lI
Sc /2

8.25 PDD12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
nf
8.26 PDD12SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
i en 19

or
25

8.27 PDD16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
m
tif

8.28 PDD16SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
8.29
at
PDD24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
0

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8.30 PDD24SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
8.31
n
PDDDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
In

8.32 PDDSDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
c\

8.33 PDDW02DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
.

8.34 PDDW04DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
8.35 PDDW08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
8.36 PDDW12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
8.37 PDDW16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
8.38 PDDW24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
8.39 PDDWDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
8.40 PDIDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
8.41 PDISDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
8.42 PDO02CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
8.43 PDO04CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
8.44 PDO08CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

TSMC Standard I/O TPZN40LPGV2OD3 Databook iii of 253

 Table of Contents

8.45 PDO12CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

8.46 PDO16CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
8.47 PDO24CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
8.48 PDT02DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
8.49 PDT04DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
8.50 PDT08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
8.51 PDT12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
8.52 PDT16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

8.53 PDT24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
TS
8.54 PDU02DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
M
8.55 PDU02SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
C
8.56 PDU04DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
8.57
C
PDU04SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
8.58
on 9
PDU08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
A
m

8.59 PDU08SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

fid 7
8.60 PDU12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
bi

8.61
en 46 ic
PDU12SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
en 06/

8.62
tia
PDU16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
9
t\

8.63 PDU16SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133

lI
Sc /2

8.64 PDU24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135

nf
i

8.65 PDU24SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

en 19

or
25

8.66 PDUDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139

m
tif

8.67 PDUSDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

at
8.68 PDUW02DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
0

io
\,\

8.69 PDUW04DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143

8.70
n
PDUW08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
In

8.71 PDUW12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147

c\

8.72 PDUW16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149

.

8.73 PDUW24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151

8.74 PDUWDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
8.75 PDXO01DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
8.76 PDXO02DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
8.77 PDXO03DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
8.78 PDXOE1DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
8.79 PDXOE2DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
8.80 PDXOE3DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
8.81 PRB08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
8.82 PRB08SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
8.83 PRB12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171

TSMC Standard I/O TPZN40LPGV2OD3 Databook iv of 253

 Table of Contents

8.84 PRB12SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173

8.85 PRB16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
8.86 PRB16SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
8.87 PRB24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
8.88 PRB24SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
8.89 PRCUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
8.90 PRD08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
8.91 PRD08SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

8.92 PRD12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
TS
8.93 PRD12SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
M
8.94 PRD16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
C
8.95 PRD16SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
8.96
C
PRD24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
8.97
on 9
PRD24SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
A
m

8.98 PRDW08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

fid 7
8.99 PRDW12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
bi

en 46 ic
8.100 PRDW16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
en 06/

tia
8.101 PRDW24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
9
t\

8.102 PRO08CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208

lI
Sc /2

8.103 PRO12CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209

nf
i

8.104 PRO16CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210

en 19

or
25

8.105 PRO24CDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211

m
tif

8.106 PRT08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212

at
8.107 PRT12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
0

io
\,\

8.108 PRT16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216

n
8.109 PRT24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
In

8.110 PRU08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220

c\

8.111 PRU08SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222

.

8.112 PRU12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224

8.113 PRU12SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 226
8.114 PRU16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 228
8.115 PRU16SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230
8.116 PRU24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232
8.117 PRU24SDGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 234
8.118 PRUW08DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 236
8.119 PRUW12DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 238
8.120 PRUW16DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
8.121 PRUW24DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
8.122 PVDD1ANA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244

TSMC Standard I/O TPZN40LPGV2OD3 Databook v of 253

 Table of Contents

8.123 PVDD1DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 245

8.124 PVDD2ANA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
8.125 PVDD2DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 247
8.126 PVDD2POC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
8.127 PVSS1ANA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
8.128 PVSS1DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250
8.129 PVSS2ANA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
8.130 PVSS2DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

8.131 PVSS3DGZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253
TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook vi of 253

1 Introduction
This Databook provides basic information about the TPZN40LPGV2OD3 Standard I/O library.

The TPZN40LPGV2OD3 library is designed to optimize I/O performance with a core voltage of
1.1V, I/O voltage of 3.3V (typical case) in the TSMC 40nm 1.1V/2.5V Logic Low Power process.
Design engineers can refer to this book for DC characteristics, cell availability, cell descriptions,

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

datasheets, and so on.
TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

1 of 253
2 Electrical Characteristics

2.1 DC Characteristics

The following tables summarize the DC characteristics and characterization conditions of the
TPZN40LPGV2OD3 Library.

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
2.1.1 Recommended Operating Conditions
M
C
Warning: Permanent damage could occur if the operation exceeds the ranges
C
listed in Table 2.1.
on 9
A
m

fid 7
bi

Table 2.1: Recommended Operating Conditions

en 46 ic
en 06/

tia
9

Parameter Min. Nom. Max. Units

t\

lI
Sc /2

VDD Pre-Driver Voltage 0.99 1.1 1.21 V

VDDP ST Post-Driver Voltage
nf 3 3.3 3.6 V
i en 19

TJ Junction Temperature
or -40 25 125 o
C
25

VIM AX Maximum Input Voltage m 5.5 V

tif

at
0

io
\,\

n
In
c\
.

2 of 253
 2 Electrical Characteristics

Table 2.2: DC Characteristics

Parameter Min. Nom. Max. Units

VIL Input Low Voltage -0.3 0.8 V

VIH Input High Voltage 2 5.5 V
VT Threshold Point 1.36 1.46 1.58 V
VT + Schmitt Trigger Low to High Threshold Point 1.71 1.84 1.94 V
VT − Schmitt Trigger High to Low Threshold Point 1.18 1.27 1.4 V

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VTP U Threshold Point with Pull-up Resistor Enabled
TS 1.32 1.42 1.55 V
VTP D Threshold Point with Pull-down Resistor Enabled 1.39 1.48 1.6 V
VT +
M
Schmitt Trigger Low to High Threshold Point with 1.67 1.8 1.91 V
PU C
Pull-up Resistor Enabled
VT − Schmitt Trigger High to Low Threshold Point with
C 1.14 1.25 1.37 V
PU
Pull-up Resistor Enabled
on 9
A

VT + Schmitt Trigger Low to High Threshold Point with 1.74 1.87 1.99 V
PD
m

Pull-down Resistor Enabled

fid 7
VT − Schmitt Trigger High to Low Threshold Point with 1.21 1.31 1.42 V
bi

PD en 46 ic
Pull-down Resistor Enabled
en 06/

II Input Leakage Current @ VI =3.3V or 0V

tia ±10µ A
9
t\

IOZ Tri-state Output Leakage Current @ VO =3.3V or 0V ±10µ A

lI
Sc /2

RP U Pull-up Resistor 29K 41K 61K Ω

RP D Pull-down Resistor
nf 31K 45K 74K Ω
i en 19

VOL Output Low Voltage

or 0.4 V
25

VOH Output High Voltage m 2.4 V

tif

IOL Low Level Output Current @VOL (max)

at
0

02:02mA io2.2 3.5 4.8 mA

\,\

04:04mA 4.4
n 7.0 9.5 mA
In

08:08mA 8.9 14.0 19.1 mA

c\

12:12mA 13.3 20.9 28.6 mA

.

16:16mA 17.8 27.9 38.2 mA

24:24mA 26.7 41.9 57.2 mA

IOH High Level Output Current @VOH (min)

02:02mA 3.9 7.7 13.1 mA
04:04mA 7.8 15.5 26.1 mA
08:08mA 15.7 31.0 52.3 mA
12:12mA 23.5 46.5 78.5 mA
16:16mA 31.3 62.0 104.6 mA
24:24mA 41.8 82.6 139.5 mA

TSMC Standard I/O TPZN40LPGV2OD3 Databook 3 of 253

 2 Electrical Characteristics

2.1.2 Characterization Conditions

Timing information is characterized under conditions listed in Table 2.3.

Table 2.3: Characterization Conditions

Corner Condition

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TC VDDcore = 1.1V
TS
VDDIO = 3.3V
Temperature = 25o C
M
Device Name = TTMacro MOS MOSCAP, TT RES BIP DIO DISRES

BC
C
VDDcore = 1.21V
VDDIO = 3.6V C
Temperature = 0o C
on 9
A

Device Name = FFMacro MOS MOSCAP, FF RES BIP DIO DISRES

m

WC VDDcore = 0.99V
fid 7
bi

VDDIO = 3V en 46 ic
Temperature = 125o C
en 06/

Device Name = SSMacro MOS MOSCAP, SS RES BIP DIO DISRES

tia
9
t\

LT VDDcore = 1.21V lI
Sc /2

VDDIO = 3.6V
Temperature = -40o C
nf
i

Device Name = FFMacro MOS MOSCAP, FF RES BIP DIO DISRES

en 19

or
25

WCZ VDDcore = 0.99V m

tif

VDDIO = 3V
Temperature = 0o C
at
0

Device Name = SSMacro MOS MOSCAP, SS RES BIP DIO DISRES

io
\,\

WCL VDDcore = 0.99V n

In

VDDIO = 3V
Temperature = -40o C
c\

Device Name = SSMacro MOS MOSCAP, SS RES BIP DIO DISRES

.

ML VDDcore = 1.21V
VDDIO = 3.6V
Temperature = 125o C
Device Name = FFMacro MOS MOSCAP, FF RES BIP DIO DISRES

MLG VDDcore = 1.21V

VDDIO = 3.6V
Temperature = 125o C
Device Name = FFGlobalCorner LocalMC MOS MOSCAP, FFGlobal-
Corner LocalMC RES BIP DIO DISRES

TSMC Standard I/O TPZN40LPGV2OD3 Databook 4 of 253

 2 Electrical Characteristics

2.2 Timing Information

2.2.1 Transition Time

Characterization is based on a “10-90” method; that is, the 10% and 90% points of the full output
swing are used to define the rise and fall transition as illustrated in Figure 2.1. Please refer to the
Synopsys .lib file for details.

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
In 90%
M 10%
Full Output Swing
Out
C Rise Transition
C
Figure 2.1: The Transition Time
on 9
A
m

2.2.2 Propagation Delay

fid 7
bi

en 46 ic
en 06/

Two different propagation delays, tpLH and tpHL, represent the state change delay for low to high
tia
and from high to low transitions.
9
t\

lI
Sc /2

The propagation delay is measured from the 50% point of the input waveform to the 50% point of
nf
the output waveform as shown in Figure 2.2.
i en 19

or
25

m
tif

In
50% at
tpHL
0

Out
io
\,\

50%
n
In

Figure 2.2: The Propagation Delay

c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 5 of 253

3 Cell Descriptions
This chapter provides cell list along with cell descriptions of I/O cells and power cut cells (if
available) of the TSMC TPZN40LPGV2OD3 library.

Table 3.1: Cell Descriptions

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Cell Name
TS
Functional Description

PCI33DGZ
M
Tri-State Output 33MHz PCI Buffer Pad with Input and Limited Slew
Rate, 5V-Tolerant
C
PCI33SDGZ 3-State Output 33MHz PCI Buffer Pad with Schmitt Trigger Input
C
and Limited Slew Rate, 5V-Tolerant
on 9
PCI66DGZ Tri-State Output 66MHz PCI Buffer Pad with Input and Limited Slew
A

Rate, 5V-Tolerant
m

fid 7
PCI66SDGZ Tri-State Output 66MHz PCI Buffer Pad with Schmitt Trigger Input
bi

and Limited Slew Rate, 5V-Tolerant

en 46 ic
en 06/

PCLAMP1ANA ESD Core-Clamp Macro for PVDD1ANA and PVSS1ANA Pair

tia
9

PCLAMP2ANA ESD IO-Clamp Macro for PVDD2ANA and PVSS2ANA Pair

t\

PDB02DGZ Tri-State Output Pad with Input, High-Volt Tolerant

lI
Sc /2

PDB02SDGZ Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant
nf
i

PDB04DGZ Tri-State Output Pad with Input, High-Volt Tolerant

en 19

or
25

PDB04SDGZ Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant
m
tif

PDB08DGZ Tri-State Output Pad with Input, High-Volt Tolerant

at
PDB08SDGZ Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant
0

io
\,\

PDB12DGZ Tri-State Output Pad with Input, High-Volt Tolerant

PDB12SDGZ
n
Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant
In

PDB16DGZ Tri-State Output Pad with Input, High-Volt Tolerant

c\

PDB16SDGZ Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant
.

PDB24DGZ Tri-State Output Pad with Input, High-Volt Tolerant

PDB24SDGZ Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant
PDD02DGZ Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant
PDD02SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Down,
High-Volt Tolerant
PDD04DGZ Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant
PDD04SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Down,
High-Volt Tolerant
PDD08DGZ Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant
PDD08SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Down,
High-Volt Tolerant
PDD12DGZ Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

Continued. . .

6 of 253
 3 Cell Descriptions

Cell Name Functional Description

PDD12SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Down,
High-Volt Tolerant
PDD16DGZ Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant
PDD16SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Down,
High-Volt Tolerant
PDD24DGZ Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant
PDD24SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Down,

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

High-Volt Tolerant
TS
PDDDGZ Input Pad With Pull-down, High-Volt Tolerant
PDDSDGZ M
Schmitt Trigger Input Pad with Pull-Down, High-Volt Tolerant
PDDW02DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Down,
C
High-Volt Tolerant
C
PDDW04DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Down,
on 9
High-Volt Tolerant
A

PDDW08DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Down,
m

fid 7
High-Volt Tolerant
bi

PDDW12DGZ
en 46 ic
Tri-State Output Pad with Input and Enable Controlled Pull-Down,
en 06/

High-Volt Tolerant
tia
9

PDDW16DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Down,
t\

High-Volt TolerantlI
Sc /2

PDDW24DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Down,
nf
High-Volt Tolerant
i en 19

PDDWDGZ
or
Input Pad with Enable Controlled Pull-Down, High-Volt Tolerant
25

PDIDGZ Input Pad, High-Volt Tolerant

m
tif

PDISDGZ Schmitt Trigger Input Pad, High-Volt Tolerant

at
0

PDO02CDG Output Pad io

\,\

PDO04CDG Output Pad n

In

PDO08CDG Output Pad

c\

PDO12CDG Output Pad

.

PDO16CDG Output Pad

PDO24CDG Output Pad
PDT02DGZ Tri-State Output Pad, High-Volt Tolerant
PDT04DGZ Tri-State Output Pad, High-Volt Tolerant
PDT08DGZ Tri-State Output Pad, High-Volt Tolerant
PDT12DGZ Tri-State Output Pad, High-Volt Tolerant
PDT16DGZ Tri-State Output Pad, High-Volt Tolerant
PDT24DGZ Tri-State Output Pad, High-Volt Tolerant
PDU02DGZ Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant
PDU02SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-
Volt Tolerant
PDU04DGZ Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 7 of 253

 3 Cell Descriptions

Cell Name Functional Description

PDU04SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-
Volt Tolerant
PDU08DGZ Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant
PDU08SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-
Volt Tolerant
PDU12DGZ Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant
PDU12SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Volt Tolerant
TS
PDU16DGZ Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant
PDU16SDGZ M
Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-
Volt Tolerant
C
PDU24DGZ Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant
C
PDU24SDGZ Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-
on 9
Volt Tolerant
A

PDUDGZ Input Pad With Pull-Up, High-Volt Tolerant

m

fid 7
PDUSDGZ Schmitt Trigger Input Pad with Pull-Up, High-Volt Tolerant
bi

PDUW02DGZ
en 46 ic
Tri-State Output Pad with Input and Enable Controlled Pull-Up,
en 06/

High-Volt Tolerant
tia
9

PDUW04DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Up,
t\

High-Volt TolerantlI
Sc /2

PDUW08DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Up,
nf
High-Volt Tolerant
i en 19

or
25

PDUW12DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Up,
High-Volt Tolerant m
tif

PDUW16DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Up,
at
0

High-Volt Tolerant io
\,\

PDUW24DGZ Tri-State Output Pad with Input and Enable Controlled Pull-Up,
High-Volt Tolerant
n
In

PDUWDGZ Input Pad with Enable Controlled Pull-Up, High-Volt Tolerant

c\

PDXO01DG Crystal Oscillator I/O

.

PDXO02DG Crystal Oscillator I/O

PDXO03DG Crystal Oscillator I/O
PDXOE1DG Crystal Oscillator I/O with High Enable
PDXOE2DG Crystal Oscillator I/O with High Enable
PDXOE3DG Crystal Oscillator I/O with High Enable
PRB08DGZ Tri-State Output Pad with Input and Limited Slew Rate, High-Volt
Tolerant
PRB08SDGZ Tri-State Output Pad with Schmitt Trigger Input and Limited Slew
Rate, High-Volt Tolerant
PRB12DGZ Tri-State Output Pad with Input and Limited Slew Rate, High-Volt
Tolerant

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 8 of 253

 3 Cell Descriptions

Cell Name Functional Description

PRB12SDGZ Tri-State Output Pad with Schmitt Trigger Input and Limited Slew
Rate, High-Volt Tolerant
PRB16DGZ Tri-State Output Pad with Input and Limited Slew Rate, High-Volt
Tolerant
PRB16SDGZ Tri-State Output Pad with Schmitt Trigger Input and Limited Slew
Rate, High-Volt Tolerant
PRB24DGZ Tri-State Output Pad with Input and Limited Slew Rate, High-Volt

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Tolerant
PRB24SDGZ
TS
Tri-State Output Pad with Schmitt Trigger Input and Limited Slew
Rate, High-Volt Tolerant
M
PRCUT Power-Cut Cell between Digital Domain A and Digital Domain B with
C
VSS Shorted and the Rest of Rails Cut
PRD08DGZ Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate,
C
High-Volt Tolerant
on 9
A

PRD08SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and
m

fid 7
Limited Slew Rate, High-Volt Tolerant
bi

PRD12DGZ Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate,
en 46 ic
High-Volt Tolerant
en 06/

PRD12SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and
tia
9

Limited Slew Rate, High-Volt Tolerant

t\

PRD16DGZ
lI
Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate,
Sc /2

High-Volt Tolerant nf
i

PRD16SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and
en 19

or
25

Limited Slew Rate, High-Volt Tolerant

m
tif

PRD24DGZ Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate,
High-Volt Tolerant at
0

PRD24SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and
io
\,\

Limited Slew Rate, High-Volt Tolerant

PRDW08DGZ
n
Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
In

trolled Pull-Down, High-Volt Tolerant

c\

PRDW12DGZ Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
.

trolled Pull-Down, High-Volt Tolerant

PRDW16DGZ Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
trolled Pull-Down, High-Volt Tolerant
PRDW24DGZ Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
trolled Pull-Down, High-Volt Tolerant
PRO08CDG Output Pad with Limited Slew Rate
PRO12CDG Output Pad with Limited Slew Rate
PRO16CDG Output Pad with Limited Slew Rate
PRO24CDG Output Pad with Limited Slew Rate
PRT08DGZ Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant
PRT12DGZ Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant
PRT16DGZ Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 9 of 253

 3 Cell Descriptions

Cell Name Functional Description

PRT24DGZ Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant
PRU08DGZ Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate,
High-Volt Tolerant
PRU08SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Lim-
ited Slew Rate, High-Volt Tolerant
PRU12DGZ Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate,
High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

PRU12SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Lim-
TS
ited Slew Rate, High-Volt Tolerant
PRU16DGZ Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate,
M
High-Volt Tolerant
C
PRU16SDGZ Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Lim-
ited Slew Rate, High-Volt Tolerant
C
PRU24DGZ
on 9
Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate,
A

High-Volt Tolerant
m

PRU24SDGZ
fid 7
Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Lim-
bi

ited Slew Rate, High-Volt Tolerant

en 46 ic
PRUW08DGZ Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
en 06/

trolled Pull-Up, High-Volt Tolerant

tia
9
t\

PRUW12DGZ Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
lI
trolled Pull-Up, High-Volt Tolerant
Sc /2

PRUW16DGZ
nf
Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
i

trolled Pull-Up, High-Volt Tolerant

en 19

or
25

PRUW24DGZ Tri-State Output Pad with Input, Limited Slew Rate and Enable Con-
m
tif

trolled Pull-Up, High-Volt Tolerant

PVDD1ANA
at
Dedicated Power Supply to Internal Macro with Core Voltage
0

PVDD1DGZ Vdd Pad for Core Power Supply io

\,\

PVDD2ANA Dedicated Power Supply to Internal Macro with I/O Voltage

n
In

PVDD2DGZ Power Pad for I/O Power Supply

c\

PVDD2POC Power-on Control Power Pad for I/O Power Supply

.

PVSS1ANA Dedicated Ground Supply for PVDD1ANA

PVSS1DGZ Vss Pad for Core Ground Supply
PVSS2ANA Dedicated Ground Supply for PVDD2ANA
PVSS2DGZ Ground Pad for I/O Ground Supply
PVSS3DGZ Ground Pad for I/O and Core Ground Supply

TSMC Standard I/O TPZN40LPGV2OD3 Databook 10 of 253

4 Simultaneously Switching Output Driving
Factors
This chapter provides information about simultaneously switching output driving factors of the
TSMC TPZN40LPGV2OD3 library.

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

4.1
TS
Terminologies and Definitions
M
C
This section describes basic terminologies and definitions of simultaneously switching output driving
factors. C
on 9
A
m

4.1.1
fid 7
Simultaneously Switching Output (SSO)
bi

en 46 ic
en 06/

Simultaneously switching output (SSO) means that a certain number of I/O buffers switching at
tia
the same time with the same direction (H → L, HZ → L or L → H, LZ → H), which would result
9
t\

in noise on the power/ground lines because of the large dI/dt value and the parasitic inductance
lI
Sc /2

of the bonding wire on the I/O power/ground cells.

nf
i en 19

or
25

4.1.2 Simultaneously Switching Noise (SSN) m

tif

at
0

SSN means the noise produced by the simultaneously switching output buffers. It would change the
io
\,\

voltage levels of power/ground nodes, so-called “Ground Bounce Effect”. Ground Bounce Effect is
n
tested at the device output by keeping one stable output at low “0” or high “1”, while all other
In

outputs of the device switch simultaneously. The noise occurred at the stable output node is called
c\

“Quiet Output Switching“ (QOS). If the input low voltage is defined as Vil, the QOS of Vil is taken
.

to be the maximum noise that the system can endure.

4.1.3 Driving Index (DI)

DI is the maximum copies of the specific I/O cell switching from high to low simultaneously without
making the voltage on the quiet output “0” higher than “Vil ” when single ground cell is applied.
We take the QOS of “Vil ” as a criterion in defining DI because “1” has more noise margin than
“0”. For example, in LVTTL specification, the margin of “Vih ” (2.0V) to VD33 (3.3V) is 1.3V in
typical corner, which is higher than the margin of “Vil ” (0.8V) to ground (0V).

11 of 253
 4 Simultaneously Switching Output Driving Factors

4.1.4 Driving Factor (DF)

DF is the amount of how the specific output buffer contributes to the SSN on the power/ground
rail. The DF value of an output buffer is proportional to dI/dt, the derivative of the current on
the output buffer. We can obtain DF as follows:

DF = 1/DI

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

4.2 DF Values
TS
M
This section provides circuit model parameters and DF values of the TPZN40LPGV2OD3 library.
C
Illustration of simulation model and calcuation instruction can be referenced from the TSMC
C
Universal Standard I/O Library General Application Note, which provides general information and
on 9
is available to download at TSMC Online.
A
m

fid 7
Table 4.1 and Table 4.2 describe wire model and capacitive load of SSO simulations.
bi

en 46 ic
en 06/

tia
9
t\

Table 4.1: R, L, C Wire Model

lI
Sc /2

R(ohm) L(nH)
nf C(pF)
i

0.3 2.1 4
en 19

or
25

0.3 5.2 m 4
tif

0.3 7.8 at4

0.3 10.5 4
0

io
\,\

n
In
c\

Table 4.2: Capacitive Load

.

I/O Type Cload (pF)

PCI33 5 15 30 50
PCI66 5 15 30 50
02:02mA 5 15 30 50
04:04mA 5 15 30 50
08:08mA 5 15 30 50
12:12mA 5 15 30 50
16:16mA 5 15 30 50
24:24mA 5 15 30 50

TSMC Standard I/O TPZN40LPGV2OD3 Databook 12 of 253

 4 Simultaneously Switching Output Driving Factors

The following tables provide SSO DF value with respect to the bond wire inductance and the
capacitive load.

Characterization Corner: LT

Table 4.3: DF Table for Non-Slew-Rate Control Cell

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

HH C
I/O Type
TS H 5pF 15pF 30pF 50pF
L HH
M 2.1nH 0.017 0.030 0.051 0.052
02:02mA
C 5.2nH 0.044 0.070 0.100 0.104
7.8nH 0.067 0.095 0.127 0.133
C 10.5nH 0.091 0.114 0.142 0.156
on 9
2.1nH 0.099 0.117 0.124 0.123
A

04:04mA 5.2nH 0.205 0.197 0.193 0.180

m

fid 7
7.8nH 0.303 0.268 0.252 0.223
bi

en 46 ic
10.5nH 0.401 0.345 0.318 0.272
en 06/

2.1nH
tia 0.229 0.250 0.229 0.198
9
t\

08:08mA 5.2nH 0.680

lI 0.563 0.433 0.350
Sc /2

7.8nH 1.819
nf 0.850 0.608 0.474
10.5nH 2.689 1.608 0.785 0.596
i en 19

2.1nH 0.544
or 0.502 0.376 0.301
25

12:12mA 5.2nH 2.497

m
1.568 0.786 0.578
tif

7.8nH 3.182 2.287

at 1.462 0.790
0

10.5nH 3.871 2.742 io1.757 1.315

\,\

2.1nH 0.786 0.738 0.574

n 0.430
In

16:16mA 5.2nH 3.225 2.346 1.533 0.862

c\

7.8nH 5.572 2.993 1.986 1.449

.

10.5nH 7.931 3.397 2.599 1.724

2.1nH 1.855 1.634 0.997 0.712
24:24mA 5.2nH 8.169 3.291 2.522 1.776
7.8nH 11.311 6.048 2.989 2.542
10.5nH 13.496 8.295 3.777 2.757

TSMC Standard I/O TPZN40LPGV2OD3 Databook 13 of 253

 4 Simultaneously Switching Output Driving Factors

Table 4.4: DF Table for Slew-Rate Control Cell

HH C
H
I/O Type 5pF 15pF 30pF 50pF
L HH
2.1nH 0.786 0.738 0.574 0.430
PCI33 5.2nH 3.225 2.346 1.533 0.862
7.8nH 5.572 2.993 1.986 1.449
10.5nH 7.931 3.397 2.599 1.724
2.1nH 1.855 1.634 0.997 0.712

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

PCI66
TS 5.2nH 8.169 3.291 2.522 1.776
7.8nH 11.311 6.048 2.989 2.542
M 10.5nH 13.496 8.295 3.777 2.757
C 2.1nH 0.094 0.119 0.131 0.119
C
08:08mA 5.2nH 0.214 0.383 0.333 0.265
on 9
7.8nH 0.517 0.634 0.494 0.381
A

10.5nH 0.711 0.934 0.645 0.502

m

fid 7
2.1nH 0.129 0.090 0.157 0.148
bi

12:12mA
en 46 ic
5.2nH 0.291 0.503 0.484 0.389
en 06/

7.8nH
tia 0.386 0.658 0.712 0.564
9
t\

10.5nH 0.451 1.180 1.169 0.732

lI
Sc /2

2.1nH 0.147 0.108 0.154 0.168

16:16mA 5.2nH
nf
0.317 0.218 0.534 0.479
i en 19

7.8nH 0.439
or 0.301 0.732 0.703
25

10.5nH 0.567 0.728

m 1.200 0.955
tif

2.1nH 0.243 0.188

at 0.154 0.173
0

24:24mA 5.2nH 0.542 0.419 io0.318 0.568

\,\

7.8nH 0.731 0.568 0.439

n 0.879
In

10.5nH 0.950 0.689 0.672 1.274

c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 14 of 253

5 Datasheet Contents
This chapter provides information about the contents of the TSMC Standard I/O library datasheet.

5.1 Truth Table

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
The truth table lists all possible combinations of input and output signals for a cell. Table 5.1
defines all the symbols used in the datasheet truth table.
M
C Table 5.1: Truth Table Symbols
C
Symbol
on 9 Definition
A

0 Logic Low
m

fid 7
1 Logic High
bi

en 46 ic
0/1 Don’t care
en 06/

- tia Not Applicable

9
t\

X Unknown
lI
Sc /2

Z High Impedance
H
nfPull-High
i en 19

L
or
Pull-Low
25

m
tif

The regular universal standard I/O Library contains dual driving cells. The driving ability of these
at
0

cells is controlled by DS pin. Table 5.2 defines the truth table of DS.
io
\,\

Table 5.2: Truth Table of DS pin n

In
c\

DS Definition
.

0 Low-drive
1 High-drive

5.2 Cell Information

The cell information section provides information about the number of pads required.

15 of 253
 5 Datasheet Contents

5.3 Leakage Power

The Leakage power section provides information about the standby leakage power from core power
and I/O power respectively.

5.4 Pin Capacitance

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
The pin capacitance table describes the typical loading at each pin of the cell (pF), corresponding
to each driving strength. M
C
5.5 Propagation Delay
C
on 9
A
m

fid 7
The propagation delay is a non-linear function of the loads. Using the 5 x 6 look-up table of the
bi

Synopsys .lib file, three piece-wise linear functions are created to calculate propagation delays for
en 46 ic
en 06/

various load conditions. Each linear function has a dedicated linear equation, and three linear
tia
equations are provided to model the delay. Each group equation in the table of propagation delay
9
t\

is based on values extracted from the third row of the 5 x 6 look-up table for your reference. Three
lI
groups of linear equations are defined as follows:
Sc /2

nf
i

Group 1: Based on the first and second points of the load index, if a cell has a load that is less
en 19

or
25

than or equal to the second point of the load index, use the linear equation in Group 1 to calculate
m
tif

the propagation delay.

at
0

Group 2: Based on the third and fourth points of the load index, if a cell has a load that is more
io
\,\

than the second point and less than the fifth point of the load index, use the linear equation in
n
Group 2 to calculate the propagation delay.
In
c\

Group 3: Based on the fifth and sixth points of the load index, if a cell has a load that is more
.

than or equal to the fifth point of the load index, use the linear equation in Group 3 to calculate
the propagation delay.

A linear equation is formed in the following format:

D = Di + K ∗ Cload

where

D = propagationdelay(ns)
Di = cellintrinsic(unloaded)delay(ns)
K = delayf actor(ns/pF )
Cload = valueof outputload(pF )

TSMC Standard I/O TPZN40LPGV2OD3 Databook 16 of 253

 5 Datasheet Contents

5.6 Example

The following is an example of datasheet.

PDIDGZ - (1)

Input Pad, High-Volt Tolerant - (2)

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
PAD
C
M
C - (3)
C
Truth Table - (4) on 9
A

INPUT OUTPUT
m

PAD C fid 7
0 0
bi

1 1 en 46 ic
en 06/

tia
9
t\

Cell Information - (5) lI

Value Unit
Sc /2

Pad Number 1 - nf
i en 19

or
25

Leakage Power - (6) m

tif

Value Unit at
VDD 1.4944 nW
0

VDDPST 1.1191 nW
io
\,\

n
In

Pin Capacitance - (7)

c\

Value Unit
.

PAD 3.4718 pF

Propagation Delay - (8)

Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 1.0140+0.2000*Cload 1.0170+0.1400*Cload 1.0250+0.100*Cload
PAD C TP LH 0.7023+0.2000*Cload 0.7034+0.1720*Cload 0.7065+0.1515*Cload

(1) Cell Name (4) Truth Table (7) Pin Capacitance

(2) Cell Description (5) Cell Information (8) Propagation Delay
(3) Cell Schematic (6) Leakage Power

TSMC Standard I/O TPZN40LPGV2OD3 Databook 17 of 253

6 Design Kits Support
The following design kits/packages are delivered in a standard library release

Table 6.1: Deliverable Design Kits

Abbreviation Description

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

rln Release note
TS
doc Databook
nldm
M
Non-linear delay model
vlg
C
VerilogTM model
vit VHDL/VitalTM model
C
ctc on 9
CeltIC cdB view
A

mdt MentorTM DFTAdvisorTM and FastscanTM model

m

apf/apt
fid 7
Astro/ICC frame view, layout view and runset files
bi

sef SoC EncounterTM frame view, layout view and runset files
en 46 ic
en 06/

gds GDSII layout views tia

9

spi LVS netlists in CDLTM format

t\

lpe
lI
Layout parasitic extracted spice netlist
Sc /2

ibs IBIS model

nf
i

*cdk Cell design kit

en 19

or
25

*vcn MagamaTM VolcanoTM database m

tif

at
*cdk and vcn kits are only provided in N90 and more advanced technologies.
0

io
\,\

n
In
c\
.

18 of 253
7 Contact Us
The TSMC standard I/O libraries are released under the supervision of the TSMC standard
quality assurance (QA) procedure. If you find any errors or encounter any problems with the
TPZN40LPGV2OD3 library, please contact your library distributor or TSMC regional application
engineers for immediate assistance.

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

19 of 253
 TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

20 of 253
n
io
at
m
or .
nf c\
lI In
tia \,\
en 46 ic
fid 7
4 tif
on 9
9 i en 19 0
C Sc /2
C t\ 25
M en 06/
TS bi
Datasheets

m
A
8
 PCI33DGZ

8.1 PCI33DGZ

Tri-State Output 33MHz PCI Buffer Pad with Input and Limited Slew Rate, 5V-Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1281 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0749 pF
PAD 3.0018 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 21 of 253

 PCI33DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3600+0.0200*Cload
I PAD TP LH 1.3670+0.0224*Cload 1.4460+0.0172*Cload 1.5000+0.0161*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1540+0.0004*Cload 3.1580 3.1580
OEN PAD TP LZ 2.0770 2.0770 2.0770

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8940+0.0236*Cload
TS 1.9880+0.0172*Cload 2.0360+0.0162*Cload
OEN PAD TP ZL 1.1270+0.0242*Cload 1.1780+0.0206*Cload 1.2010+0.0201*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9398+0.3150*Cload 0.9427+0.2340*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6020+0.3300*Cload
C 0.6031+0.2960*Cload 0.6041+0.2875*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 22 of 253

 PCI33SDGZ

8.2 PCI33SDGZ

3-State Output 33MHz PCI Buffer Pad with Schmitt Trigger Input and Limited Slew Rate, 5V-
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

PAD
TS
I M
C
OEN C
on 9
A

Truth Table
m

INPUT OUTPUT
fid 7
bi

OEN I PAD PAD C en 46 ic

en 06/

0 0 - 0 0
tia
9

0 1 - 1 1
t\

1 0/1 0 - 0 lI
Sc /2

1 0/1 1 - 1 nf
i

1 0/1 Z - X
en 19

or
25

m
tif

Cell Information at
0

Value Unit io
\,\

Cell Width 30.000 um n

In

Cell Height 190.000 um

c\

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.7481 nW
VDDPST 4.1891 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0628 pF
PAD 3.0018 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 23 of 253

 PCI33SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3600+0.0200*Cload
I PAD TP LH 1.3650+0.0226*Cload 1.4485+0.0171*Cload 1.4920+0.0162*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1560+0.0004*Cload 3.1600 3.1600
OEN PAD TP LZ 2.0770 2.0770 2.0770

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8950+0.0234*Cload
TS 1.9880+0.0172*Cload 2.0350+0.0162*Cload
OEN PAD TP ZL 1.1260+0.0242*Cload 1.1805+0.0205*Cload 1.2010+0.0201*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1535+0.2050*Cload
PAD C TP LH 1.0490+0.3000*Cload
C 1.0490+0.3000*Cload 1.0515+0.2850*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 24 of 253

 PCI66DGZ

8.3 PCI66DGZ

Tri-State Output 66MHz PCI Buffer Pad with Input and Limited Slew Rate, 5V-Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1289 nW

Pin Capacitance
Value Unit
I 0.0598 pF
OEN 0.0629 pF
PAD 2.8469 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 25 of 253

 PCI66DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3710+0.0172*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH 1.4940+0.0166*Cload 1.5455+0.0135*Cload 1.6040+0.0123*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.1970+0.0012*Cload 4.2110 4.2110
OEN PAD TP LZ 2.4060+0.0002*Cload 2.4080 2.4080

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.9290+0.0216*Cload
TS 2.0410+0.0142*Cload 2.1280+0.0124*Cload
OEN PAD TP ZL 1.1630+0.0192*Cload 1.2365+0.0143*Cload 1.2800+0.0134*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9403+0.3000*Cload 0.9430+0.2320*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6022+0.3250*Cload
C 0.6033+0.2940*Cload 0.6042+0.2875*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 26 of 253

 PCI66SDGZ

8.4 PCI66SDGZ

Tri-State Output 66MHz PCI Buffer Pad with Schmitt Trigger Input and Limited Slew Rate, 5V-
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

PAD
TS
I M
C
OEN C
on 9
A

Truth Table
m

INPUT OUTPUT
fid 7
bi

OEN I PAD PAD C en 46 ic

en 06/

0 0 - 0 0
tia
9

0 1 - 1 1
t\

1 0/1 0 - 0 lI
Sc /2

1 0/1 1 - 1 nf
i

1 0/1 Z - X
en 19

or
25

m
tif

Cell Information at
0

Value Unit io
\,\

Cell Width 30.000 um n

In

Cell Height 190.000 um

c\

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.7483 nW
VDDPST 4.1890 nW

Pin Capacitance
Value Unit
I 0.0717 pF
OEN 0.0750 pF
PAD 2.8469 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 27 of 253

 PCI66SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3700+0.0174*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH 1.4920+0.0168*Cload 1.5455+0.0135*Cload 1.6040+0.0123*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.1970+0.0012*Cload 4.2110 4.2110
OEN PAD TP LZ 2.4060+0.0002*Cload 2.4080 2.4080

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.9290+0.0216*Cload
TS 2.0435+0.0141*Cload 2.1280+0.0124*Cload
OEN PAD TP ZL 1.1630+0.0192*Cload 1.2365+0.0143*Cload 1.2800+0.0134*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1535+0.2050*Cload
PAD C TP LH 1.0490+0.3000*Cload
C 1.0490+0.3000*Cload 1.0500+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 28 of 253

 PCLAMP1ANA

8.5 PCLAMP1ANA

ESD Core-Clamp Macro for PVDD1ANA and PVSS1ANA Pair

VDDESD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

PCLAMP
TS
M
C
VSSESD
C
on 9
A

Cell Information
m

fid 7
Value Unit
bi

Cell Width 106.605 um

en 46 ic
en 06/

Cell Height 65.000 um tia

9
t\

lI
Sc /2

Leakage Power nf
i

Value Unit
en 19

or
25

VDDESD 0.0000 nW m
tif

at
0

Pin Capacitance io
\,\

Value Unit n
In

VDDESD 3.7023 pF
c\

VSSESD 7.6451 pF
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 29 of 253

 PCLAMP2ANA

8.6 PCLAMP2ANA

ESD IO-Clamp Macro for PVDD2ANA and PVSS2ANA Pair

VDDESD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

PCLAMP
TS
M
C
VSSESD
C
on 9
A

Cell Information
m

fid 7
Value Unit
bi

Cell Width 106.605 um

en 46 ic
en 06/

Cell Height 65.000 um tia

9
t\

lI
Sc /2

Leakage Power nf
i

Value Unit
en 19

or
25

VDDESD 4.8266 nW m
tif

at
0

Pin Capacitance io
\,\

Value Unit n
In

VDDESD 3.0604 pF
c\

VSSESD 6.1669 pF
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 30 of 253

 PDB02DGZ

8.7 PDB02DGZ

Tri-State Output Pad with Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1275 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0750 pF
PAD 3.2744 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 31 of 253

 PDB02DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5530+0.1640*Cload 1.6060+0.1602*Cload 1.6310+0.1597*Cload
I PAD TP LH 1.5660+0.1316*Cload 1.6075+0.1285*Cload 1.6090+0.1283*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4250 1.4250 1.4250
OEN PAD TP LZ 1.5000 1.4975+0.0001*Cload 1.5010

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.1150+0.1316*Cload
TS 2.1565+0.1285*Cload 2.1590+0.1283*Cload
OEN PAD TP ZL 1.4100+0.1640*Cload 1.4655+0.1601*Cload 1.4910+0.1597*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9393+0.3100*Cload 0.9422+0.2340*Cload 0.9455+0.2050*Cload
PAD C TP LH 0.6024+0.3300*Cload
C 0.6036+0.2940*Cload 0.6043+0.2880*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 32 of 253

 PDB02SDGZ

8.8 PDB02SDGZ

Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7482 nW
VDDPST 4.1874 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.2744 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 33 of 253

 PDB02SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5530+0.1640*Cload 1.6060+0.1602*Cload 1.6310+0.1597*Cload
I PAD TP LH 1.5640+0.1318*Cload 1.6065+0.1285*Cload 1.6090+0.1283*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4250 1.4250 1.4250
OEN PAD TP LZ 1.5000 1.4975+0.0001*Cload 1.5010

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.1130+0.1318*Cload
TS 2.1555+0.1285*Cload 2.1590+0.1283*Cload
OEN PAD TP ZL 1.4100+0.1640*Cload 1.4620+0.1602*Cload 1.4910+0.1597*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1465+0.3500*Cload 1.1510+0.2200*Cload 1.1550+0.2000*Cload
PAD C TP LH 1.0500+0.3000*Cload
C 1.0500+0.3000*Cload 1.0510+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 34 of 253

 PDB04DGZ

8.9 PDB04DGZ

Tri-State Output Pad with Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1279 nW

Pin Capacitance
Value Unit
I 0.0593 pF
OEN 0.0629 pF
PAD 3.2352 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 35 of 253

 PDB04DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3260+0.0838*Cload 1.3725+0.0805*Cload 1.4020+0.0799*Cload
I PAD TP LH 1.3470+0.0672*Cload 1.3855+0.0645*Cload 1.3970+0.0642*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5490 1.5490 1.5490
OEN PAD TP LZ 1.5810 1.5810 1.5810

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8940+0.0672*Cload
TS 1.9315+0.0645*Cload 1.9510+0.0641*Cload
OEN PAD TP ZL 1.1830+0.0836*Cload 1.2275+0.0805*Cload 1.2560+0.0799*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9397+0.3050*Cload 0.9427+0.2300*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6026+0.3250*Cload
C 0.6036+0.2960*Cload 0.6045+0.2880*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 36 of 253

 PDB04SDGZ

8.10 PDB04SDGZ

Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7482 nW
VDDPST 4.1883 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0629 pF
PAD 3.2352 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 37 of 253

 PDB04SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3260+0.0838*Cload 1.3725+0.0805*Cload 1.4020+0.0799*Cload
I PAD TP LH 1.3470+0.0672*Cload 1.3880+0.0644*Cload 1.4040+0.0641*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5480 1.5480 1.5480
OEN PAD TP LZ 1.5800+0.0002*Cload 1.5820 1.5820

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8940+0.0672*Cload
TS 1.9315+0.0645*Cload 1.9500+0.0641*Cload
OEN PAD TP ZL 1.1840+0.0836*Cload 1.2275+0.0805*Cload 1.2490+0.0800*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1535+0.2050*Cload
PAD C TP LH 1.0500+0.3000*Cload
C 1.0500+0.3000*Cload 1.0525+0.2850*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 38 of 253

 PDB08DGZ

8.11 PDB08DGZ

Tri-State Output Pad with Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1282 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0628 pF
PAD 3.1573 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 39 of 253

 PDB08DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0428*Cload 1.2955+0.0405*Cload 1.3160+0.0401*Cload
I PAD TP LH 1.3090+0.0354*Cload 1.3495+0.0325*Cload 1.3690+0.0321*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9130 1.9130 1.9130
OEN PAD TP LZ 1.7460 1.7460 1.7460

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8560+0.0352*Cload
TS 1.8945+0.0325*Cload 1.9140+0.0321*Cload
OEN PAD TP ZL 1.1150+0.0430*Cload 1.1505+0.0405*Cload 1.1780+0.0400*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9398+0.3150*Cload 0.9431+0.2300*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6025+0.3250*Cload
C 0.6034+0.2980*Cload 0.6045+0.2875*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 40 of 253

 PDB08SDGZ

8.12 PDB08SDGZ

Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7483 nW
VDDPST 4.1884 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0750 pF
PAD 3.1573 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 41 of 253

 PDB08SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0428*Cload 1.2955+0.0405*Cload 1.3160+0.0401*Cload
I PAD TP LH 1.3090+0.0354*Cload 1.3495+0.0325*Cload 1.3690+0.0321*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9130 1.9130 1.9130
OEN PAD TP LZ 1.7460 1.7470 1.7470

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8550+0.0354*Cload
TS 1.8945+0.0325*Cload 1.9140+0.0321*Cload
OEN PAD TP ZL 1.1150+0.0430*Cload 1.1505+0.0405*Cload 1.1780+0.0400*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1560+0.2000*Cload
PAD C TP LH 1.0500+0.3000*Cload
C 1.0500+0.3000*Cload 1.0510+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 42 of 253

 PDB12DGZ

8.13 PDB12DGZ

Tri-State Output Pad with Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1282 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0750 pF
PAD 3.0796 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 43 of 253

 PDB12DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2800+0.0288*Cload 1.3055+0.0271*Cload 1.3200+0.0268*Cload
I PAD TP LH 1.3270+0.0268*Cload 1.3925+0.0221*Cload 1.4190+0.0215*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4640 2.4640 2.4640
OEN PAD TP LZ 1.9100 1.9100 1.9100

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8710+0.0268*Cload
TS 1.9400+0.0220*Cload 1.9630+0.0215*Cload
OEN PAD TP ZL 1.1160+0.0300*Cload 1.1550+0.0272*Cload 1.1810+0.0267*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9399+0.3100*Cload 0.9427+0.2340*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6022+0.3250*Cload
C 0.6033+0.2940*Cload 0.6042+0.2875*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 44 of 253

 PDB12SDGZ

8.14 PDB12SDGZ

Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7483 nW
VDDPST 4.1892 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.0796 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 45 of 253

 PDB12SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2800+0.0288*Cload 1.3055+0.0271*Cload 1.3200+0.0268*Cload
I PAD TP LH 1.3270+0.0268*Cload 1.3925+0.0221*Cload 1.4190+0.0215*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4630 2.4630 2.4630
OEN PAD TP LZ 1.9100 1.9100 1.9100

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8720+0.0268*Cload
TS 1.9400+0.0220*Cload 1.9630+0.0215*Cload
OEN PAD TP ZL 1.1160+0.0300*Cload 1.1585+0.0271*Cload 1.1810+0.0267*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1560+0.2000*Cload
PAD C TP LH 1.0485+0.3500*Cload
C 1.0500+0.3000*Cload 1.0500+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 46 of 253

 PDB16DGZ

8.15 PDB16DGZ

Tri-State Output Pad with Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1281 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0749 pF
PAD 3.0018 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 47 of 253

 PDB16DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3600+0.0200*Cload
I PAD TP LH 1.3670+0.0224*Cload 1.4460+0.0172*Cload 1.5000+0.0161*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1540+0.0004*Cload 3.1580 3.1580
OEN PAD TP LZ 2.0770 2.0770 2.0770

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8940+0.0236*Cload
TS 1.9880+0.0172*Cload 2.0360+0.0162*Cload
OEN PAD TP ZL 1.1270+0.0242*Cload 1.1780+0.0206*Cload 1.2010+0.0201*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9398+0.3150*Cload 0.9427+0.2340*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6020+0.3300*Cload
C 0.6031+0.2960*Cload 0.6041+0.2875*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 48 of 253

 PDB16SDGZ

8.16 PDB16SDGZ

Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7482 nW
VDDPST 4.1883 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0628 pF
PAD 3.0018 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 49 of 253

 PDB16SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3600+0.0200*Cload
I PAD TP LH 1.3650+0.0226*Cload 1.4485+0.0171*Cload 1.4920+0.0162*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1540+0.0004*Cload 3.1580 3.1580
OEN PAD TP LZ 2.0770 2.0770 2.0770

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.8950+0.0234*Cload
TS 1.9880+0.0172*Cload 2.0360+0.0162*Cload
OEN PAD TP ZL 1.1270+0.0242*Cload 1.1780+0.0206*Cload 1.2010+0.0201*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1520+0.2200*Cload 1.1560+0.2000*Cload
PAD C TP LH 1.0485+0.3500*Cload
C 1.0500+0.3000*Cload 1.0500+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 50 of 253

 PDB24DGZ

8.17 PDB24DGZ

Tri-State Output Pad with Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1294 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0629 pF
PAD 2.8469 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 51 of 253

 PDB24DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3710+0.0172*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH 1.4940+0.0166*Cload 1.5455+0.0135*Cload 1.6040+0.0123*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.1970+0.0010*Cload 4.2090 4.2090
OEN PAD TP LZ 2.4080 2.4090 2.4090

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.9280+0.0218*Cload
TS 2.0445+0.0141*Cload 2.1290+0.0124*Cload
OEN PAD TP ZL 1.1630+0.0192*Cload 1.2365+0.0143*Cload 1.2810+0.0134*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9400+0.3100*Cload 0.9430+0.2320*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6019+0.3300*Cload
C 0.6034+0.2920*Cload 0.6040+0.2880*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 52 of 253

 PDB24SDGZ

8.18 PDB24SDGZ

Tri-State Output Pad with Schmitt Trigger Input, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7483 nW
VDDPST 4.1891 nW

Pin Capacitance
Value Unit
I 0.0719 pF
OEN 0.0750 pF
PAD 2.8469 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 53 of 253

 PDB24SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3700+0.0174*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH 1.4920+0.0168*Cload 1.5455+0.0135*Cload 1.6040+0.0123*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.1950+0.0012*Cload 4.2100 4.2100
OEN PAD TP LZ 2.4080 2.4090 2.4090

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 1.9290+0.0216*Cload
TS 2.0445+0.0141*Cload 2.1290+0.0124*Cload
OEN PAD TP ZL 1.1620+0.0194*Cload 1.2365+0.0143*Cload 1.2810+0.0134*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1520+0.2200*Cload 1.1560+0.2000*Cload
PAD C TP LH 1.0485+0.3500*Cload
C 1.0510+0.2800*Cload 1.0500+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 54 of 253

 PDD02DGZ

8.19 PDD02DGZ

Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1488 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 55 of 253

 PDD02DGZ

Value Unit
PAD 3.2741 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5420+0.1624*Cload 1.5955+0.1585*Cload 1.6090+0.1583*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.5680+0.1320*Cload 1.6095+0.1289*Cload 1.6110+0.1287*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4250
M 1.4250 1.4250
OEN PAD TP LZ 1.5010
C 1.5010 1.5010
OEN PAD TP ZH 2.1170+0.1320*Cload
C 2.1610+0.1288*Cload 2.1610+0.1287*Cload
OEN PAD TP ZL 1.3320+0.1630*Cload
on 9 1.3855+0.1591*Cload 1.4010+0.1587*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8862+0.3100*Cload 0.8890+0.2320*Cload 0.8932+0.2025*Cload
bi

PAD C TP LH 0.6260+0.3250*Cload 0.6272+0.2960*Cload

en 46 ic 0.6280+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 56 of 253

 PDD02SDGZ

8.20 PDD02SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.2090 nW

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 57 of 253

 PDD02SDGZ

Value Unit
PAD 3.2741 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5430+0.1622*Cload 1.5920+0.1586*Cload 1.6090+0.1583*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.5670+0.1320*Cload 1.6085+0.1289*Cload 1.6110+0.1287*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4250
M 1.4250 1.4250
OEN PAD TP LZ 1.5010
C 1.5010 1.5010
OEN PAD TP ZH 2.1160+0.1320*Cload
C 2.1600+0.1288*Cload 2.1610+0.1287*Cload
OEN PAD TP ZL 1.3310+0.1630*Cload
on 9 1.3855+0.1591*Cload 1.4010+0.1587*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1020+0.3000*Cload 1.1040+0.2400*Cload 1.1075+0.2050*Cload
bi

PAD C TP LH 1.0980+0.3000*Cload 1.1000+0.2800*Cload

en 46 ic 1.0990+0.2900*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 58 of 253

 PDD04DGZ

8.21 PDD04DGZ

Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6724 nW
VDDPST 4.1493 nW

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 59 of 253

 PDD04DGZ

Value Unit
PAD 3.2349 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3240+0.0832*Cload 1.3710+0.0800*Cload 1.3960+0.0795*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3470+0.0674*Cload 1.3885+0.0645*Cload 1.4050+0.0642*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5500
M 1.5500 1.5500
OEN PAD TP LZ 1.5820
C 1.5820 1.5820
OEN PAD TP ZH 1.8940+0.0674*Cload
C 1.9355+0.0645*Cload 1.9510+0.0642*Cload
OEN PAD TP ZL 1.1480+0.0834*Cload
on 9 1.1965+0.0801*Cload 1.2170+0.0797*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8863+0.3100*Cload 0.8890+0.2340*Cload 0.8935+0.2025*Cload
bi

PAD C TP LH 0.6260+0.3300*Cload 0.6274+0.2920*Cload

en 46 ic 0.6280+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 60 of 253

 PDD04SDGZ

8.22 PDD04SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.2095 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 61 of 253

 PDD04SDGZ

Value Unit
PAD 3.2349 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3240+0.0832*Cload 1.3710+0.0800*Cload 1.3960+0.0795*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3470+0.0674*Cload 1.3885+0.0645*Cload 1.4040+0.0642*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5500
M 1.5500 1.5500
OEN PAD TP LZ 1.5820
C 1.5820 1.5820
OEN PAD TP ZH 1.8950+0.0672*Cload
C 1.9345+0.0645*Cload 1.9510+0.0642*Cload
OEN PAD TP ZL 1.1490+0.0832*Cload
on 9 1.1965+0.0801*Cload 1.2160+0.0797*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1020+0.3000*Cload 1.1040+0.2400*Cload 1.1075+0.2050*Cload
bi

PAD C TP LH 1.0980+0.3000*Cload 1.1000+0.2800*Cload

en 46 ic 1.0990+0.2900*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 62 of 253

 PDD08DGZ

8.23 PDD08DGZ

Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6722 nW
VDDPST 4.1498 nW

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 63 of 253

 PDD08DGZ

Value Unit
PAD 3.1570 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0426*Cload 1.2915+0.0405*Cload 1.3210+0.0399*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3090+0.0354*Cload 1.3505+0.0325*Cload 1.3710+0.0321*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9150
M 1.9150 1.9150
OEN PAD TP LZ 1.7450+0.0002*Cload
C 1.7470 1.7470
OEN PAD TP ZH 1.8550+0.0354*Cload
C 1.8955+0.0325*Cload 1.9160+0.0321*Cload
OEN PAD TP ZL 1.1040+0.0430*Cload
on 9 1.1395+0.0405*Cload 1.1630+0.0400*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8865+0.3100*Cload 0.8895+0.2320*Cload 0.8934+0.2030*Cload
bi

PAD C TP LH 0.6262+0.3200*Cload 0.6271+0.2960*Cload

en 46 ic 0.6279+0.2885*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 64 of 253

 PDD08SDGZ

8.24 PDD08SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.2097 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 65 of 253

 PDD08SDGZ

Value Unit
PAD 3.1570 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0426*Cload 1.2940+0.0404*Cload 1.3210+0.0399*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3090+0.0354*Cload 1.3505+0.0325*Cload 1.3710+0.0321*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9160
M 1.9160 1.9160
OEN PAD TP LZ 1.7460
C 1.7460 1.7460
OEN PAD TP ZH 1.8530+0.0356*Cload
C 1.8955+0.0325*Cload 1.9150+0.0321*Cload
OEN PAD TP ZL 1.0990+0.0432*Cload
on 9 1.1365+0.0405*Cload 1.1600+0.0400*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1020+0.3000*Cload 1.1050+0.2200*Cload 1.1075+0.2050*Cload
bi

PAD C TP LH 1.0965+0.3500*Cload 1.0980+0.3000*Cload

en 46 ic 1.0980+0.2900*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 66 of 253

 PDD12DGZ

8.25 PDD12DGZ

Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1499 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 67 of 253

 PDD12DGZ

Value Unit
PAD 3.0793 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2790+0.0288*Cload 1.3035+0.0271*Cload 1.3230+0.0267*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3290+0.0266*Cload 1.3960+0.0220*Cload 1.4200+0.0215*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4520
M 2.4520 2.4520
OEN PAD TP LZ 1.9080+0.0004*Cload
C 1.9120 1.9120
OEN PAD TP ZH 1.8720+0.0268*Cload
C 1.9410+0.0220*Cload 1.9640+0.0215*Cload
OEN PAD TP ZL 1.1100+0.0302*Cload
on 9 1.1545+0.0271*Cload 1.1760+0.0267*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8864+0.3050*Cload 0.8893+0.2320*Cload 0.8936+0.2020*Cload
bi

PAD C TP LH 0.6256+0.3300*Cload 0.6268+0.2940*Cload

en 46 ic 0.6277+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 68 of 253

 PDD12SDGZ

8.26 PDD12SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.2100 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 69 of 253

 PDD12SDGZ

Value Unit
PAD 3.0793 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2790+0.0288*Cload 1.3035+0.0271*Cload 1.3230+0.0267*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3270+0.0268*Cload 1.3960+0.0220*Cload 1.4200+0.0215*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4540
M 2.4540 2.4540
OEN PAD TP LZ 1.9100
C 1.9100 1.9100
OEN PAD TP ZH 1.8710+0.0268*Cload
C 1.9375+0.0221*Cload 1.9640+0.0215*Cload
OEN PAD TP ZL 1.1100+0.0302*Cload
on 9 1.1510+0.0272*Cload 1.1760+0.0267*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1010+0.3000*Cload 1.1050+0.2200*Cload 1.1090+0.2000*Cload
bi

PAD C TP LH 1.0965+0.3500*Cload 1.0990+0.2800*Cload

en 46 ic 1.0980+0.2900*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 70 of 253

 PDD16DGZ

8.27 PDD16DGZ

Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6722 nW
VDDPST 4.1491 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 71 of 253

 PDD16DGZ

Value Unit
PAD 3.0015 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3160+0.0222*Cload 1.3415+0.0203*Cload 1.3570+0.0200*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3660+0.0226*Cload 1.4495+0.0171*Cload 1.4930+0.0162*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1020+0.0002*Cload
M 3.1040 3.1040
OEN PAD TP LZ 2.0770
C 2.0780 2.0780
OEN PAD TP ZH 1.8960+0.0234*Cload
C 1.9880+0.0172*Cload 2.0360+0.0162*Cload
OEN PAD TP ZL 1.1220+0.0248*Cload
on 9 1.1825+0.0205*Cload 1.2020+0.0201*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8867+0.3050*Cload 0.8894+0.2320*Cload 0.8937+0.2025*Cload
bi

PAD C TP LH 0.6257+0.3250*Cload 0.6269+0.2940*Cload

en 46 ic 0.6280+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 72 of 253

 PDD16SDGZ

8.28 PDD16SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6722 nW
VDDPST 4.2098 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 73 of 253

 PDD16SDGZ

Value Unit
PAD 3.0015 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3160+0.0222*Cload 1.3425+0.0203*Cload 1.3570+0.0200*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3660+0.0226*Cload 1.4460+0.0172*Cload 1.4930+0.0162*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1020+0.0002*Cload
M 3.1040 3.1040
OEN PAD TP LZ 2.0770
C 2.0780 2.0780
OEN PAD TP ZH 1.8940+0.0236*Cload
C 1.9880+0.0172*Cload 2.0360+0.0162*Cload
OEN PAD TP ZL 1.1200+0.0250*Cload
on 9 1.1825+0.0205*Cload 1.2020+0.0201*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1020+0.3000*Cload 1.1040+0.2400*Cload 1.1075+0.2050*Cload
bi

PAD C TP LH 1.0965+0.3500*Cload 1.0980+0.3000*Cload

en 46 ic 1.1005+0.2850*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 74 of 253

 PDD24DGZ

8.29 PDD24DGZ

Tri-State Output Pad with Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1508 nW

Pin Capacitance
Value Unit
I 0.0598 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 75 of 253

 PDD24DGZ

Value Unit
PAD 2.8466 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3710+0.0172*Cload 1.4215+0.0137*Cload 1.4420+0.0133*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.4940+0.0166*Cload 1.5455+0.0135*Cload 1.6120+0.0122*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.0310+0.0008*Cload
M 4.0390 4.0390
OEN PAD TP LZ 2.4080
C 2.4080 2.4080
OEN PAD TP ZH 1.9290+0.0216*Cload
C 2.0445+0.0141*Cload 2.1290+0.0124*Cload
OEN PAD TP ZL 1.1590+0.0196*Cload
on 9 1.2375+0.0143*Cload 1.2820+0.0134*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8868+0.3050*Cload 0.8896+0.2320*Cload 0.8938+0.2025*Cload
bi

PAD C TP LH 0.6257+0.3300*Cload 0.6271+0.2940*Cload

en 46 ic 0.6280+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 76 of 253

 PDD24SDGZ

8.30 PDD24SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6722 nW
VDDPST 4.2108 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 77 of 253

 PDD24SDGZ

Value Unit
PAD 2.8466 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3710+0.0172*Cload 1.4215+0.0137*Cload 1.4420+0.0133*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.4940+0.0166*Cload 1.5455+0.0135*Cload 1.6120+0.0122*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.0310+0.0006*Cload
M 4.0380 4.0380
OEN PAD TP LZ 2.4080
C 2.4090 2.4090
OEN PAD TP ZH 1.9280+0.0218*Cload
C 2.0445+0.0141*Cload 2.1290+0.0124*Cload
OEN PAD TP ZL 1.1600+0.0196*Cload
on 9 1.2385+0.0143*Cload 1.2830+0.0134*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1020+0.3000*Cload 1.1040+0.2400*Cload 1.1075+0.2050*Cload
bi

PAD C TP LH 1.0965+0.3500*Cload 1.0980+0.3000*Cload

en 46 ic 1.1005+0.2850*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 78 of 253

 PDDDGZ

8.31 PDDDGZ

Input Pad With Pull-down, High-Volt Tolerant

PAD
C

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Truth Table M
INPUT OUTPUT C
PAD C C
0 0 on 9
A

1 1
m

Z 0
fid 7
bi

en 46 ic
en 06/

Cell Information tia

9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

Pad Number 1 -
or
25

m
tif

Leakage Power
at
0

io
\,\

Value Unit
VDD 3.5980 nW
n
In

VDDPST 4.1490 nW
c\
.

Pin Capacitance
Value Unit
PAD 3.3135 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 0.8855+0.3100*Cload 0.8884+0.2340*Cload 0.8929+0.2020*Cload
PAD C TP LH 0.6257+0.3250*Cload 0.6267+0.2960*Cload 0.6276+0.2880*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 79 of 253

 PDDSDGZ

8.32 PDDSDGZ

Schmitt Trigger Input Pad with Pull-Down, High-Volt Tolerant

PAD
C

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Truth Table M
INPUT OUTPUT C
PAD C C
0 0 on 9
A

1 1
m

Z 0
fid 7
bi

en 46 ic
en 06/

Cell Information tia

9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

Pad Number 1 -
or
25

m
tif

Leakage Power
at
0

io
\,\

Value Unit
VDD 3.5979 nW
n
In

VDDPST 4.2092 nW
c\
.

Pin Capacitance
Value Unit
PAD 3.3135 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 1.1010+0.3000*Cload 1.1050+0.2200*Cload 1.1090+0.2000*Cload
PAD C TP LH 1.0980+0.3000*Cload 1.0980+0.3000*Cload 1.1005+0.2850*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 80 of 253

 PDDW02DGZ

8.33 PDDW02DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN
TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD REN PAD C

0 0 - 0/1 0 0
tia
9
t\

0 1 - 0/1 1 1 lI
Sc /2

1 0/1 0 0/1 - 0 nf
i

1 0/1 1 0/1 - 1
en 19

or
25

1 0/1 Z 0 - 0
m
tif

1 0/1 Z 1 - X
at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6722 nW
VDDPST 4.1484 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 81 of 253

 PDDW02DGZ

Value Unit
OEN 0.0629 pF
PAD 3.2739 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
TS
1.5530+0.1640*Cload 1.6060+0.1602*Cload 1.6310+0.1597*Cload
I PAD TP LH 1.5660+0.1316*Cload
M 1.6075+0.1285*Cload 1.6090+0.1283*Cload
Timing Arc (< 10.0000)pf
C (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4250
C 1.4250 1.4250
OEN PAD TP LZ 1.4990+0.0002*Cload
on 9 1.5010 1.5010
A

OEN PAD TP ZH 2.1150+0.1316*Cload 2.1565+0.1285*Cload 2.1590+0.1283*Cload

m

OEN PAD TP ZL
fid 7
1.4130+0.1640*Cload 1.4685+0.1601*Cload 1.4910+0.1597*Cload
bi

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

en 46 ic (> 0.3000)pf
en 06/

PAD C TP HL 0.9395+0.3050*Cload 0.9426+0.2300*Cload 0.9455+0.2050*Cload

PAD C TP LH 0.6027+0.3250*Cload
tia
0.6040+0.2920*Cload 0.6046+0.2880*Cload
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 82 of 253

 PDDW04DGZ

8.34 PDDW04DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN
TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD REN PAD C

0 0 - 0/1 0 0
tia
9
t\

0 1 - 0/1 1 1 lI
Sc /2

1 0/1 0 0/1 - 0 nf
i

1 0/1 1 0/1 - 1
en 19

or
25

1 0/1 Z 0 - 0
m
tif

1 0/1 Z 1 - X
at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6721 nW
VDDPST 4.1493 nW

Pin Capacitance
Value Unit
I 0.0716 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 83 of 253

 PDDW04DGZ

Value Unit
OEN 0.0629 pF
PAD 3.2347 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
TS
1.3260+0.0838*Cload 1.3725+0.0805*Cload 1.4020+0.0799*Cload
I PAD TP LH 1.3470+0.0672*Cload
M 1.3855+0.0645*Cload 1.4040+0.0641*Cload
Timing Arc (< 10.0000)pf
C (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5480
C 1.5480 1.5480
OEN PAD TP LZ 1.5820on 9 1.5820 1.5820
A

OEN PAD TP ZH 1.8940+0.0672*Cload 1.9315+0.0645*Cload 1.9510+0.0641*Cload

m

OEN PAD TP ZL
fid 7
1.1840+0.0836*Cload 1.2310+0.0804*Cload 1.2570+0.0799*Cload
bi

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

en 46 ic (> 0.3000)pf
en 06/

PAD C TP HL 0.9397+0.3100*Cload 0.9425+0.2340*Cload 0.9480+0.2000*Cload

PAD C TP LH 0.6026+0.3300*Cload
tia
0.6039+0.2940*Cload 0.6049+0.2875*Cload
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 84 of 253

 PDDW08DGZ

8.35 PDDW08DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN
TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD REN PAD C

0 0 - 0/1 0 0
tia
9
t\

0 1 - 0/1 1 1 lI
Sc /2

1 0/1 0 0/1 - 0 nf
i

1 0/1 1 0/1 - 1
en 19

or
25

1 0/1 Z 0 - 0
m
tif

1 0/1 Z 1 - X
at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1495 nW

Pin Capacitance
Value Unit
I 0.0595 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 85 of 253

 PDDW08DGZ

Value Unit
OEN 0.0629 pF
PAD 3.1568 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
TS
1.2610+0.0428*Cload 1.2955+0.0405*Cload 1.3160+0.0401*Cload
I PAD TP LH 1.3090+0.0354*Cload
M 1.3495+0.0325*Cload 1.3690+0.0321*Cload
Timing Arc (< 10.0000)pf
C (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9140
C 1.9140 1.9140
OEN PAD TP LZ 1.7460on 9 1.7460 1.7460
A

OEN PAD TP ZH 1.8540+0.0354*Cload 1.8945+0.0325*Cload 1.9130+0.0321*Cload

m

OEN PAD TP ZL
fid 7
1.1140+0.0430*Cload 1.1505+0.0405*Cload 1.1700+0.0401*Cload
bi

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

en 46 ic (> 0.3000)pf
en 06/

PAD C TP HL 0.9402+0.3100*Cload 0.9431+0.2320*Cload 0.9465+0.2050*Cload

PAD C TP LH 0.6028+0.3250*Cload
tia
0.6039+0.2940*Cload 0.6050+0.2875*Cload
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 86 of 253

 PDDW12DGZ

8.36 PDDW12DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN
TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD REN PAD C

0 0 - 0/1 0 0
tia
9
t\

0 1 - 0/1 1 1 lI
Sc /2

1 0/1 0 0/1 - 0 nf
i

1 0/1 1 0/1 - 1
en 19

or
25

1 0/1 Z 0 - 0
m
tif

1 0/1 Z 1 - X
at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1501 nW

Pin Capacitance
Value Unit
I 0.0595 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 87 of 253

 PDDW12DGZ

Value Unit
OEN 0.0629 pF
PAD 3.0791 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
TS
1.2800+0.0288*Cload 1.3055+0.0271*Cload 1.3200+0.0268*Cload
I PAD TP LH 1.3270+0.0268*Cload
M 1.3925+0.0221*Cload 1.4190+0.0215*Cload
Timing Arc (< 10.0000)pf
C (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4640
C 2.4640 2.4640
OEN PAD TP LZ 1.9100on 9 1.9100 1.9100
A

OEN PAD TP ZH 1.8710+0.0268*Cload 1.9400+0.0220*Cload 1.9700+0.0214*Cload

m

OEN PAD TP ZL
fid 7
1.1140+0.0302*Cload 1.1550+0.0272*Cload 1.1730+0.0268*Cload
bi

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

en 46 ic (> 0.3000)pf
en 06/

PAD C TP HL 0.9400+0.3150*Cload 0.9430+0.2320*Cload 0.9480+0.2000*Cload

PAD C TP LH 0.6024+0.3250*Cload
tia
0.6037+0.2920*Cload 0.6047+0.2870*Cload
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 88 of 253

 PDDW16DGZ

8.37 PDDW16DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN
TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD REN PAD C

0 0 - 0/1 0 0
tia
9
t\

0 1 - 0/1 1 1 lI
Sc /2

1 0/1 0 0/1 - 0 nf
i

1 0/1 1 0/1 - 1
en 19

or
25

1 0/1 Z 0 - 0
m
tif

1 0/1 Z 1 - X
at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1498 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 89 of 253

 PDDW16DGZ

Value Unit
OEN 0.0629 pF
PAD 3.0013 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
TS
1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3600+0.0200*Cload
I PAD TP LH 1.3670+0.0224*Cload
M 1.4485+0.0171*Cload 1.4920+0.0162*Cload
Timing Arc (< 10.0000)pf
C (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1550+0.0002*Cload
C 3.1570 3.1570
OEN PAD TP LZ 2.0770on 9 2.0780 2.0780
A

OEN PAD TP ZH 1.8950+0.0234*Cload 1.9880+0.0172*Cload 2.0350+0.0162*Cload

m

OEN PAD TP ZL
fid 7
1.1270+0.0242*Cload 1.1780+0.0206*Cload 1.2010+0.0201*Cload
bi

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

en 46 ic (> 0.3000)pf
en 06/

PAD C TP HL 0.9404+0.3000*Cload 0.9431+0.2320*Cload 0.9465+0.2050*Cload

PAD C TP LH 0.6022+0.3300*Cload
tia
0.6036+0.2920*Cload 0.6044+0.2875*Cload
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 90 of 253

 PDDW24DGZ

8.38 PDDW24DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Down, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN
TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD REN PAD C

0 0 - 0/1 0 0
tia
9
t\

0 1 - 0/1 1 1 lI
Sc /2

1 0/1 0 0/1 - 0 nf
i

1 0/1 1 0/1 - 1
en 19

or
25

1 0/1 Z 0 - 0
m
tif

1 0/1 Z 1 - X
at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1505 nW

Pin Capacitance
Value Unit
I 0.0600 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 91 of 253

 PDDW24DGZ

Value Unit
OEN 0.0629 pF
PAD 2.8464 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
TS
1.3710+0.0172*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH 1.4940+0.0166*Cload
M 1.5455+0.0135*Cload 1.6040+0.0123*Cload
Timing Arc (< 10.0000)pf
C (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.1950+0.0012*Cload
C 4.2090 4.2090
OEN PAD TP LZ 2.4080on 9 2.4090 2.4090
A

OEN PAD TP ZH 1.9290+0.0216*Cload 2.0410+0.0142*Cload 2.1290+0.0124*Cload

m

OEN PAD TP ZL
fid 7
1.1630+0.0192*Cload 1.2365+0.0143*Cload 1.2810+0.0134*Cload
bi

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

en 46 ic (> 0.3000)pf
en 06/

PAD C TP HL 0.9402+0.3100*Cload 0.9429+0.2340*Cload 0.9480+0.2000*Cload

PAD C TP LH 0.6022+0.3300*Cload
tia
0.6032+0.2980*Cload 0.6042+0.2880*Cload
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 92 of 253

 PDDWDGZ

8.39 PDDWDGZ

Input Pad with Enable Controlled Pull-Down, High-Volt Tolerant

PAD
C

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
M
C
Truth Table C
INPUT OUTPUT on 9
A

PAD REN C
m

0 0/1 0
fid 7
bi

1 0/1 1 en 46 ic
Z 0 0
en 06/

Z 1 X
tia
9
t\

lI
Sc /2

Cell Information
nf
i en 19

Value Unit or
25

Cell Width 30.000 um m

tif

Cell Height 190.000 um at

0

Pad Number 1 - io
\,\

n
In

Leakage Power
c\

Value Unit
.

VDD 3.6737 nW
VDDPST 4.1485 nW

Pin Capacitance
Value Unit
PAD 3.3133 pF
REN 0.0608 pF

Propagation Delay
Group1 Group2 Group3
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 93 of 253

 PDDWDGZ

Group1 Group2 Group3

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 0.9391+0.3050*Cload 0.9416+0.2360*Cload 0.9470+0.2000*Cload
PAD C TP LH 0.6021+0.3300*Cload 0.6034+0.2940*Cload 0.6042+0.2880*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 94 of 253

 PDIDGZ

8.40 PDIDGZ

Input Pad, High-Volt Tolerant

PAD
C

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
PAD C C
0 0 C
1 1 on 9
A
m

Cell Information
fid 7
bi

Value Unit
en 46 ic
en 06/

Cell Width 30.000 um tia

9
t\

Cell Height 190.000 um

Pad Number 1 -
lI
Sc /2

nf
i en 19

or
25

Leakage Power
m
tif

Value Unit
VDD 3.6739 nW
at
0

VDDPST 4.1276 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

PAD 3.3138 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 0.9390+0.3000*Cload 0.9417+0.2320*Cload 0.9470+0.2000*Cload
PAD C TP LH 0.6019+0.3300*Cload 0.6032+0.2940*Cload 0.6039+0.2880*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 95 of 253

 PDISDGZ

8.41 PDISDGZ

Schmitt Trigger Input Pad, High-Volt Tolerant

PAD
C

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
PAD C C
0 0 C
1 1 on 9
A
m

Cell Information
fid 7
bi

Value Unit
en 46 ic
en 06/

Cell Width 30.000 um tia

9
t\

Cell Height 190.000 um

Pad Number 1 -
lI
Sc /2

nf
i en 19

or
25

Leakage Power
m
tif

Value Unit
VDD 3.6738 nW
at
0

VDDPST 4.1878 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

PAD 3.3138 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 1.1455+0.3500*Cload 1.1500+0.2200*Cload 1.1540+0.2000*Cload
PAD C TP LH 1.0485+0.3500*Cload 1.0510+0.2800*Cload 1.0500+0.2900*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 96 of 253

 PDO02CDG

8.42 PDO02CDG

Output Pad

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6077 nW
at
0

VDDPST 4.0545 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.2740 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5510+0.1638*Cload 1.6020+0.1602*Cload 1.6310+0.1597*Cload
I PAD TP LH 1.5620+0.1316*Cload 1.6060+0.1284*Cload 1.6300+0.1280*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 97 of 253

 PDO04CDG

8.43 PDO04CDG

Output Pad

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0549 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.2348 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3260+0.0836*Cload 1.3740+0.0804*Cload 1.4000+0.0799*Cload
I PAD TP LH 1.3460+0.0672*Cload 1.3835+0.0645*Cload 1.4020+0.0641*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 98 of 253

 PDO08CDG

8.44 PDO08CDG

Output Pad

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6076 nW
at
0

VDDPST 4.0552 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.1569 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0428*Cload 1.2920+0.0406*Cload 1.3150+0.0401*Cload
I PAD TP LH 1.3080+0.0354*Cload 1.3485+0.0325*Cload 1.3680+0.0321*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 99 of 253

 PDO12CDG

8.45 PDO12CDG

Output Pad

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6077 nW
at
0

VDDPST 4.0558 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.0792 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2800+0.0288*Cload 1.3055+0.0271*Cload 1.3270+0.0267*Cload
I PAD TP LH 1.3280+0.0266*Cload 1.3950+0.0220*Cload 1.4180+0.0215*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 100 of 253

 PDO16CDG

8.46 PDO16CDG

Output Pad

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0557 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.0014 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3425+0.0203*Cload 1.3520+0.0201*Cload
I PAD TP LH 1.3650+0.0226*Cload 1.4485+0.0171*Cload 1.4920+0.0162*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 101 of 253

 PDO24CDG

8.47 PDO24CDG

Output Pad

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0548 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0600 pF
PAD 2.8465 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3700+0.0174*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH 1.4940+0.0166*Cload 1.5445+0.0135*Cload 1.6040+0.0123*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 102 of 253

 PDT02DGZ

8.48 PDT02DGZ

Tri-State Output Pad, High-Volt Tolerant

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN TS
Truth Table
M
INPUT OUTPUT
C
OEN I PAD
C
0 0 0
on 9
A

0 1 1
m

fid 7
1 0/1 Z
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.6809 nW
c\

VDDPST 4.0545 nW
.

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0629 pF
PAD 3.2740 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5510+0.1638*Cload 1.6020+0.1602*Cload 1.6310+0.1597*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 103 of 253

 PDT02DGZ

Group1 Group2 Group3

I PAD TP LH 1.5620+0.1316*Cload 1.6060+0.1284*Cload 1.6300+0.1280*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4250 1.4250 1.4250
OEN PAD TP LZ 1.5000 1.5000 1.5000
OEN PAD TP ZH 2.1110+0.1316*Cload 2.1550+0.1284*Cload 2.1800+0.1280*Cload
OEN PAD TP ZL 1.4090+0.1640*Cload 1.4610+0.1602*Cload 1.4910+0.1597*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 104 of 253

 PDT04DGZ

8.49 PDT04DGZ

Tri-State Output Pad, High-Volt Tolerant

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN TS
Truth Table
M
INPUT OUTPUT
C
OEN I PAD
C
0 0 0
on 9
A

0 1 1
m

fid 7
1 0/1 Z
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.6809 nW
c\

VDDPST 4.0549 nW
.

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0750 pF
PAD 3.2348 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3260+0.0836*Cload 1.3740+0.0804*Cload 1.4000+0.0799*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 105 of 253

 PDT04DGZ

Group1 Group2 Group3

I PAD TP LH 1.3460+0.0672*Cload 1.3835+0.0645*Cload 1.4020+0.0641*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5480 1.5480 1.5480
OEN PAD TP LZ 1.5810 1.5820 1.5820
OEN PAD TP ZH 1.8940+0.0670*Cload 1.9295+0.0645*Cload 1.9490+0.0641*Cload
OEN PAD TP ZL 1.1860+0.0834*Cload 1.2310+0.0804*Cload 1.2570+0.0799*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 106 of 253

 PDT08DGZ

8.50 PDT08DGZ

Tri-State Output Pad, High-Volt Tolerant

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN TS
Truth Table
M
INPUT OUTPUT
C
OEN I PAD
C
0 0 0
on 9
A

0 1 1
m

fid 7
1 0/1 Z
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.6809 nW
c\

VDDPST 4.0550 nW
.

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.1569 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0428*Cload 1.2920+0.0406*Cload 1.3150+0.0401*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 107 of 253

 PDT08DGZ

Group1 Group2 Group3

I PAD TP LH 1.3080+0.0354*Cload 1.3485+0.0325*Cload 1.3680+0.0321*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9130 1.9130 1.9130
OEN PAD TP LZ 1.7460 1.7460 1.7460
OEN PAD TP ZH 1.8540+0.0354*Cload 1.8935+0.0325*Cload 1.9130+0.0321*Cload
OEN PAD TP ZL 1.1140+0.0430*Cload 1.1495+0.0405*Cload 1.1690+0.0401*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 108 of 253

 PDT12DGZ

8.51 PDT12DGZ

Tri-State Output Pad, High-Volt Tolerant

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN TS
Truth Table
M
INPUT OUTPUT
C
OEN I PAD
C
0 0 0
on 9
A

0 1 1
m

fid 7
1 0/1 Z
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.6809 nW
c\

VDDPST 4.0560 nW
.

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.0792 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2800+0.0288*Cload 1.3055+0.0271*Cload 1.3270+0.0267*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 109 of 253

 PDT12DGZ

Group1 Group2 Group3

I PAD TP LH 1.3280+0.0266*Cload 1.3950+0.0220*Cload 1.4180+0.0215*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4630 2.4630 2.4630
OEN PAD TP LZ 1.9100 1.9100 1.9100
OEN PAD TP ZH 1.8710+0.0268*Cload 1.9400+0.0220*Cload 1.9700+0.0214*Cload
OEN PAD TP ZL 1.1150+0.0300*Cload 1.1575+0.0271*Cload 1.1800+0.0267*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 110 of 253

 PDT16DGZ

8.52 PDT16DGZ

Tri-State Output Pad, High-Volt Tolerant

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN TS
Truth Table
M
INPUT OUTPUT
C
OEN I PAD
C
0 0 0
on 9
A

0 1 1
m

fid 7
1 0/1 Z
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.6809 nW
c\

VDDPST 4.0571 nW
.

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0628 pF
PAD 3.0014 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3425+0.0203*Cload 1.3520+0.0201*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 111 of 253

 PDT16DGZ

Group1 Group2 Group3

I PAD TP LH 1.3650+0.0226*Cload 1.4485+0.0171*Cload 1.4920+0.0162*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1580+0.0002*Cload 3.1600 3.1600
OEN PAD TP LZ 2.0770 2.0770 2.0770
OEN PAD TP ZH 1.8950+0.0234*Cload 1.9880+0.0172*Cload 2.0350+0.0162*Cload
OEN PAD TP ZL 1.1280+0.0240*Cload 1.1805+0.0205*Cload 1.2010+0.0201*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 112 of 253

 PDT24DGZ

8.53 PDT24DGZ

Tri-State Output Pad, High-Volt Tolerant

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN TS
Truth Table
M
INPUT OUTPUT
C
OEN I PAD
C
0 0 0
on 9
A

0 1 1
m

fid 7
1 0/1 Z
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.6809 nW
c\

VDDPST 4.0544 nW
.

Pin Capacitance
Value Unit
I 0.0598 pF
OEN 0.0750 pF
PAD 2.8465 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3700+0.0174*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 113 of 253

 PDT24DGZ

Group1 Group2 Group3

I PAD TP LH 1.4940+0.0166*Cload 1.5445+0.0135*Cload 1.6040+0.0123*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.2050+0.0010*Cload 4.2170 4.2170
OEN PAD TP LZ 2.4060+0.0002*Cload 2.4080 2.4080
OEN PAD TP ZH 1.9290+0.0216*Cload 2.0435+0.0141*Cload 2.1280+0.0124*Cload
OEN PAD TP ZL 1.1630+0.0192*Cload 1.2355+0.0143*Cload 1.2790+0.0134*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 114 of 253

 PDU02DGZ

8.54 PDU02DGZ

Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.0994 nW

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 115 of 253

 PDU02DGZ

Value Unit
PAD 3.2741 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5560+0.1644*Cload 1.6095+0.1605*Cload 1.6400+0.1600*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.5580+0.1302*Cload 1.5980+0.1272*Cload 1.5890+0.1273*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4220
M 1.4220 1.4220
OEN PAD TP LZ 1.4980
C 1.4980 1.4990
OEN PAD TP ZH 2.0370+0.1310*Cload
C 2.0815+0.1277*Cload 2.0710+0.1277*Cload
OEN PAD TP ZL 1.4070+0.1644*Cload
on 9 1.4605+0.1605*Cload 1.4900+0.1600*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9703+0.3050*Cload 0.9729+0.2340*Cload 0.9780+0.2000*Cload
bi

PAD C TP LH 0.5763+0.3250*Cload 0.5775+0.2920*Cload

en 46 ic 0.5782+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 116 of 253

 PDU02SDGZ

8.55 PDU02SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.1557 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 117 of 253

 PDU02SDGZ

Value Unit
PAD 3.2741 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.5570+0.1642*Cload 1.6095+0.1605*Cload 1.6400+0.1600*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.5570+0.1302*Cload 1.5970+0.1272*Cload 1.6100+0.1270*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.4220
M 1.4220 1.4220
OEN PAD TP LZ 1.4980
C 1.4980 1.4980
OEN PAD TP ZH 2.0360+0.1310*Cload
C 2.0795+0.1277*Cload 2.0990+0.1273*Cload
OEN PAD TP ZL 1.4060+0.1644*Cload
on 9 1.4595+0.1605*Cload 1.4900+0.1600*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1770+0.3000*Cload 1.1790+0.2400*Cload 1.1850+0.2000*Cload
bi

PAD C TP LH 1.0065+0.3500*Cload 1.0080+0.3000*Cload

en 46 ic 1.0105+0.2850*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 118 of 253

 PDU04DGZ

8.56 PDU04DGZ

Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.0959 nW

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 119 of 253

 PDU04DGZ

Value Unit
PAD 3.2349 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3250+0.0840*Cload 1.3765+0.0805*Cload 1.4010+0.0800*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3450+0.0668*Cload 1.3845+0.0641*Cload 1.3990+0.0638*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5440
M 1.5440 1.5440
OEN PAD TP LZ 1.5800
C 1.5800 1.5800
OEN PAD TP ZH 1.8550+0.0670*Cload
C 1.8935+0.0643*Cload 1.9140+0.0639*Cload
OEN PAD TP ZL 1.1810+0.0838*Cload
on 9 1.2295+0.0805*Cload 1.2550+0.0800*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9705+0.3050*Cload 0.9731+0.2340*Cload 0.9765+0.2050*Cload
bi

PAD C TP LH 0.5762+0.3250*Cload 0.5775+0.2920*Cload

en 46 ic 0.5783+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 120 of 253

 PDU04SDGZ

8.57 PDU04SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.1523 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 121 of 253

 PDU04SDGZ

Value Unit
PAD 3.2349 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3270+0.0838*Cload 1.3765+0.0805*Cload 1.4010+0.0800*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3450+0.0668*Cload 1.3835+0.0641*Cload 1.3990+0.0638*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.5440
M 1.5440 1.5440
OEN PAD TP LZ 1.5800
C 1.5800 1.5800
OEN PAD TP ZH 1.8530+0.0672*Cload
C 1.8935+0.0643*Cload 1.9060+0.0640*Cload
OEN PAD TP ZL 1.1810+0.0838*Cload
on 9 1.2295+0.0805*Cload 1.2540+0.0800*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1780+0.3000*Cload 1.1810+0.2200*Cload 1.1835+0.2050*Cload
bi

PAD C TP LH 1.0075+0.3500*Cload 1.0100+0.2800*Cload

en 46 ic 1.0090+0.2900*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 122 of 253

 PDU08DGZ

8.58 PDU08DGZ

Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.0962 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 123 of 253

 PDU08DGZ

Value Unit
PAD 3.1570 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0428*Cload 1.2940+0.0406*Cload 1.3180+0.0401*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3070+0.0354*Cload 1.3490+0.0324*Cload 1.3690+0.0320*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9100
M 1.9100 1.9100
OEN PAD TP LZ 1.7450
C 1.7450 1.7450
OEN PAD TP ZH 1.8290+0.0358*Cload
C 1.8735+0.0325*Cload 1.8910+0.0321*Cload
OEN PAD TP ZL 1.1090+0.0430*Cload
on 9 1.1470+0.0406*Cload 1.1710+0.0401*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9708+0.3050*Cload 0.9736+0.2320*Cload 0.9790+0.2000*Cload
bi

PAD C TP LH 0.5760+0.3300*Cload 0.5775+0.2920*Cload

en 46 ic 0.5782+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 124 of 253

 PDU08SDGZ

8.59 PDU08SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.1503 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 125 of 253

 PDU08SDGZ

Value Unit
PAD 3.1570 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2610+0.0428*Cload 1.2940+0.0406*Cload 1.3180+0.0401*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3070+0.0354*Cload 1.3490+0.0324*Cload 1.3690+0.0320*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 1.9100
M 1.9100 1.9100
OEN PAD TP LZ 1.7450
C 1.7450 1.7450
OEN PAD TP ZH 1.8310+0.0356*Cload
C 1.8735+0.0325*Cload 1.8910+0.0321*Cload
OEN PAD TP ZL 1.1090+0.0430*Cload
on 9 1.1470+0.0406*Cload 1.1710+0.0401*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1780+0.3000*Cload 1.1800+0.2400*Cload 1.1860+0.2000*Cload
bi

PAD C TP LH 1.0075+0.3500*Cload 1.0100+0.2800*Cload

en 46 ic 1.0105+0.2850*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 126 of 253

 PDU12DGZ

8.60 PDU12DGZ

Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6048 nW
VDDPST 3.0922 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 127 of 253

 PDU12DGZ

Value Unit
PAD 3.0793 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2800+0.0288*Cload 1.3065+0.0271*Cload 1.3210+0.0268*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3280+0.0266*Cload 1.3940+0.0220*Cload 1.4230+0.0214*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4680
M 2.4680 2.4680
OEN PAD TP LZ 1.9090
C 1.9090 1.9090
OEN PAD TP ZH 1.8510+0.0272*Cload
C 1.9225+0.0221*Cload 1.9480+0.0215*Cload
OEN PAD TP ZL 1.1110+0.0300*Cload
on 9 1.1520+0.0272*Cload 1.1710+0.0268*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9706+0.3050*Cload 0.9733+0.2340*Cload 0.9765+0.2050*Cload
bi

PAD C TP LH 0.5757+0.3250*Cload 0.5770+0.2940*Cload

en 46 ic 0.5778+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 128 of 253

 PDU12SDGZ

8.61 PDU12SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.1488 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 129 of 253

 PDU12SDGZ

Value Unit
PAD 3.0793 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.2800+0.0288*Cload 1.3065+0.0271*Cload 1.3210+0.0268*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3280+0.0266*Cload 1.3940+0.0220*Cload 1.4230+0.0214*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 2.4680
M 2.4680 2.4680
OEN PAD TP LZ 1.9090
C 1.9090 1.9090
OEN PAD TP ZH 1.8510+0.0272*Cload
C 1.9225+0.0221*Cload 1.9550+0.0214*Cload
OEN PAD TP ZL 1.1110+0.0300*Cload
on 9 1.1520+0.0272*Cload 1.1710+0.0268*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1780+0.3000*Cload 1.1800+0.2400*Cload 1.1860+0.2000*Cload
bi

PAD C TP LH 1.0080+0.3000*Cload 1.0080+0.3000*Cload

en 46 ic 1.0080+0.2900*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 130 of 253

 PDU16DGZ

8.62 PDU16DGZ

Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6048 nW
VDDPST 3.0900 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 131 of 253

 PDU16DGZ

Value Unit
PAD 3.0016 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3530+0.0201*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3650+0.0226*Cload 1.4475+0.0171*Cload 1.4980+0.0161*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1890+0.0004*Cload
M 3.1930 3.1930
OEN PAD TP LZ 2.0760
C 2.0760 2.0760
OEN PAD TP ZH 1.8730+0.0242*Cload
C 1.9735+0.0173*Cload 2.0240+0.0162*Cload
OEN PAD TP ZL 1.1230+0.0246*Cload
on 9 1.1780+0.0206*Cload 1.2020+0.0201*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9707+0.3100*Cload 0.9736+0.2340*Cload 0.9790+0.2000*Cload
bi

PAD C TP LH 0.5757+0.3300*Cload 0.5771+0.2920*Cload

en 46 ic 0.5777+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 132 of 253

 PDU16SDGZ

8.63 PDU16SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.1499 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 133 of 253

 PDU16SDGZ

Value Unit
PAD 3.0016 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3530+0.0201*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.3650+0.0226*Cload 1.4475+0.0171*Cload 1.4980+0.0161*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.1890+0.0004*Cload
M 3.1930 3.1930
OEN PAD TP LZ 2.0760
C 2.0760 2.0760
OEN PAD TP ZH 1.8740+0.0240*Cload
C 1.9735+0.0173*Cload 2.0240+0.0162*Cload
OEN PAD TP ZL 1.1230+0.0246*Cload
on 9 1.1780+0.0206*Cload 1.2020+0.0201*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1780+0.3000*Cload 1.1820+0.2200*Cload 1.1860+0.2000*Cload
bi

PAD C TP LH 1.0065+0.3500*Cload 1.0080+0.3000*Cload

en 46 ic 1.0105+0.2850*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 134 of 253

 PDU24DGZ

8.64 PDU24DGZ

Tri-State Output Pad with Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.0905 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 135 of 253

 PDU24DGZ

Value Unit
PAD 2.8467 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3700+0.0174*Cload 1.4225+0.0137*Cload 1.4360+0.0134*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.4940+0.0166*Cload 1.5445+0.0135*Cload 1.6030+0.0123*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.2880+0.0014*Cload
M 4.3040 4.3040
OEN PAD TP LZ 2.4050+0.0002*Cload
C 2.4070 2.4070
OEN PAD TP ZH 1.9080+0.0224*Cload
C 2.0310+0.0142*Cload 2.1200+0.0124*Cload
OEN PAD TP ZL 1.1610+0.0192*Cload
on 9 1.2345+0.0143*Cload 1.2780+0.0134*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9708+0.3100*Cload 0.9737+0.2320*Cload 0.9790+0.2000*Cload
bi

PAD C TP LH 0.5758+0.3250*Cload 0.5770+0.2940*Cload

en 46 ic 0.5779+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 136 of 253

 PDU24SDGZ

8.65 PDU24SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Pull-Up, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.1449 nW

Pin Capacitance
Value Unit
I 0.0719 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 137 of 253

 PDU24SDGZ

Value Unit
PAD 2.8467 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.3700+0.0174*Cload 1.4225+0.0137*Cload 1.4360+0.0134*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.4950+0.0164*Cload 1.5445+0.0135*Cload 1.6030+0.0123*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.2880+0.0014*Cload
M 4.3040 4.3040
OEN PAD TP LZ 2.4050+0.0002*Cload
C 2.4070 2.4070
OEN PAD TP ZH 1.9090+0.0222*Cload
C 2.0310+0.0142*Cload 2.1200+0.0124*Cload
OEN PAD TP ZL 1.1610+0.0192*Cload
on 9 1.2345+0.0143*Cload 1.2780+0.0134*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
1.1775+0.3500*Cload 1.1820+0.2200*Cload 1.1845+0.2050*Cload
bi

PAD C TP LH 1.0080+0.3000*Cload 1.0080+0.3000*Cload

en 46 ic 1.0105+0.2850*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 138 of 253

 PDUDGZ

8.66 PDUDGZ

Input Pad With Pull-Up, High-Volt Tolerant

PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS
Truth Table
M
INPUT OUTPUT
C
PAD C C
0 0
on 9
A

1 1
m

Z 1
fid 7
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.5304 nW
c\

VDDPST 2.8996 nW
.

Pin Capacitance
Value Unit
PAD 3.3135 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 0.9697+0.3050*Cload 0.9723+0.2340*Cload 0.9755+0.2050*Cload
PAD C TP LH 0.5757+0.3250*Cload 0.5769+0.2940*Cload 0.5777+0.2880*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 139 of 253

 PDUSDGZ

8.67 PDUSDGZ

Schmitt Trigger Input Pad with Pull-Up, High-Volt Tolerant

PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS
Truth Table
M
INPUT OUTPUT
C
PAD C C
0 0
on 9
A

1 1
m

Z 1
fid 7
bi

en 46 ic
en 06/

Cell Information
tia
9
t\

Value Unit lI
Sc /2

Cell Width 30.000 um nf

Cell Height 190.000 um
i en 19

or
25

Pad Number 1 -
m
tif

at
0

Leakage Power io
\,\

Value Unit n
In

VDD 3.5304 nW
c\

VDDPST 2.9566 nW
.

Pin Capacitance
Value Unit
PAD 3.3135 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 1.1770+0.3000*Cload 1.1790+0.2400*Cload 1.1825+0.2050*Cload
PAD C TP LH 1.0080+0.3000*Cload 1.0080+0.3000*Cload 1.0105+0.2850*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 140 of 253

 PDUW02DGZ

8.68 PDUW02DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0
0 1 - 0/1 1 1
lI
Sc /2

1 0/1 0 0/1 - 0
nf
i en 19

1 0/1 1 0/1 - 1
or
25

1 0/1 Z 0 - 1 m
tif

1 0/1 Z 1 - X at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6081 nW
VDDPST 4.0598 nW

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 141 of 253

 PDUW02DGZ

Value Unit

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0629 pF
PAD 3.2741 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Propagation Delay M
Group1
C Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
C
1.5530+0.1640*Cload 1.6060+0.1602*Cload 1.6310+0.1597*Cload
I PAD TP LH
on 9
1.5660+0.1316*Cload 1.6075+0.1285*Cload 1.6090+0.1283*Cload
A

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

m

fid 7
OEN PAD TP HZ 1.4250 1.4250 1.4250
bi

OEN PAD TP LZ 1.5010

en 46 ic 1.5010 1.5010
en 06/

OEN PAD TP ZH 2.1150+0.1316*Cload 2.1565+0.1285*Cload

tia 2.1590+0.1283*Cload
9
t\

OEN PAD TP ZL 1.4100+0.1640*Cload 1.4655+0.1601*Cload

lI 1.4910+0.1597*Cload
Sc /2

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

nf (> 0.3000)pf
PAD C TP HL 0.9396+0.3100*Cload 0.9427+0.2320*Cload 0.9480+0.2000*Cload
i en 19

PAD C TP LH 0.6027+0.3300*Cload
or
0.6041+0.2920*Cload 0.6051+0.2870*Cload
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 142 of 253

 PDUW04DGZ

8.69 PDUW04DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0
0 1 - 0/1 1 1
lI
Sc /2

1 0/1 0 0/1 - 0
nf
i en 19

1 0/1 1 0/1 - 1
or
25

1 0/1 Z 0 - 1 m
tif

1 0/1 Z 1 - X at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6081 nW
VDDPST 4.0601 nW

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 143 of 253

 PDUW04DGZ

Value Unit

Pin Capacitance
Value Unit
I 0.0714 pF
OEN 0.0629 pF
PAD 3.2349 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Propagation Delay M
Group1
C Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
C
1.3260+0.0838*Cload 1.3725+0.0805*Cload 1.4020+0.0799*Cload
I PAD TP LH
on 9
1.3470+0.0672*Cload 1.3855+0.0645*Cload 1.4050+0.0641*Cload
A

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

m

fid 7
OEN PAD TP HZ 1.5480 1.5480 1.5480
bi

OEN PAD TP LZ 1.5810

en 46 ic 1.5820 1.5820
en 06/

OEN PAD TP ZH 1.8940+0.0672*Cload 1.9315+0.0645*Cload

tia 1.9510+0.0641*Cload
9
t\

OEN PAD TP ZL 1.1840+0.0836*Cload 1.2275+0.0805*Cload

lI 1.2490+0.0800*Cload
Sc /2

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

nf (> 0.3000)pf
PAD C TP HL 0.9400+0.3150*Cload 0.9427+0.2340*Cload 0.9480+0.2000*Cload
i en 19

PAD C TP LH 0.6028+0.3300*Cload
or
0.6042+0.2920*Cload 0.6048+0.2880*Cload
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 144 of 253

 PDUW08DGZ

8.70 PDUW08DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0
0 1 - 0/1 1 1
lI
Sc /2

1 0/1 0 0/1 - 0
nf
i en 19

1 0/1 1 0/1 - 1
or
25

1 0/1 Z 0 - 1 m
tif

1 0/1 Z 1 - X at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6079 nW
VDDPST 4.0603 nW

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 145 of 253

 PDUW08DGZ

Value Unit

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.1570 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Propagation Delay M
Group1
C Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
C
1.2610+0.0428*Cload 1.2955+0.0405*Cload 1.3160+0.0401*Cload
I PAD TP LH
on 9
1.3090+0.0354*Cload 1.3495+0.0325*Cload 1.3690+0.0321*Cload
A

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

m

fid 7
OEN PAD TP HZ 1.9120 1.9120 1.9120
bi

OEN PAD TP LZ 1.7470

en 46 ic 1.7470 1.7470
en 06/

OEN PAD TP ZH 1.8550+0.0354*Cload 1.8945+0.0325*Cload

tia 1.9140+0.0321*Cload
9
t\

OEN PAD TP ZL 1.1150+0.0430*Cload 1.1515+0.0405*Cload

lI 1.1710+0.0401*Cload
Sc /2

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

nf (> 0.3000)pf
PAD C TP HL 0.9404+0.3050*Cload 0.9431+0.2320*Cload 0.9465+0.2050*Cload
i en 19

PAD C TP LH 0.6027+0.3300*Cload
or
0.6041+0.2920*Cload 0.6047+0.2880*Cload
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 146 of 253

 PDUW12DGZ

8.71 PDUW12DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0
0 1 - 0/1 1 1
lI
Sc /2

1 0/1 0 0/1 - 0
nf
i en 19

1 0/1 1 0/1 - 1
or
25

1 0/1 Z 0 - 1 m
tif

1 0/1 Z 1 - X at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6079 nW
VDDPST 4.0610 nW

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 147 of 253

 PDUW12DGZ

Value Unit

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.0794 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Propagation Delay M
Group1
C Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
C
1.2800+0.0288*Cload 1.3055+0.0271*Cload 1.3200+0.0268*Cload
I PAD TP LH
on 9
1.3270+0.0268*Cload 1.3960+0.0220*Cload 1.4190+0.0215*Cload
A

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

m

fid 7
OEN PAD TP HZ 2.4610 2.4610 2.4610
bi

OEN PAD TP LZ 1.9120

en 46 ic 1.9120 1.9120
en 06/

OEN PAD TP ZH 1.8720+0.0268*Cload 1.9400+0.0220*Cload

tia 1.9630+0.0215*Cload
9
t\

OEN PAD TP ZL 1.1160+0.0300*Cload 1.1585+0.0271*Cload

lI 1.1740+0.0268*Cload
Sc /2

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

nf (> 0.3000)pf
PAD C TP HL 0.9403+0.3050*Cload 0.9429+0.2340*Cload 0.9480+0.2000*Cload
i en 19

PAD C TP LH 0.6023+0.3300*Cload
or
0.6034+0.2960*Cload 0.6043+0.2880*Cload
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 148 of 253

 PDUW16DGZ

8.72 PDUW16DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0
0 1 - 0/1 1 1
lI
Sc /2

1 0/1 0 0/1 - 0
nf
i en 19

1 0/1 1 0/1 - 1
or
25

1 0/1 Z 0 - 1 m
tif

1 0/1 Z 1 - X at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6077 nW
VDDPST 4.0609 nW

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 149 of 253

 PDUW16DGZ

Value Unit

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.0016 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Propagation Delay M
Group1
C Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
C
1.3150+0.0224*Cload 1.3435+0.0203*Cload 1.3600+0.0200*Cload
I PAD TP LH
on 9
1.3660+0.0226*Cload 1.4460+0.0172*Cload 1.4930+0.0162*Cload
A

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

m

fid 7
OEN PAD TP HZ 3.1540+0.0002*Cload 3.1560 3.1560
bi

OEN PAD TP LZ 2.0780

en 46 ic 2.0780 2.0780
en 06/

OEN PAD TP ZH 1.8940+0.0236*Cload 1.9880+0.0172*Cload

tia 2.0360+0.0162*Cload
9
t\

OEN PAD TP ZL 1.1270+0.0242*Cload 1.1815+0.0205*Cload

lI 1.2020+0.0201*Cload
Sc /2

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

nf (> 0.3000)pf
PAD C TP HL 0.9404+0.3050*Cload 0.9430+0.2340*Cload 0.9465+0.2050*Cload
i en 19

PAD C TP LH 0.6025+0.3250*Cload
or
0.6038+0.2920*Cload 0.6045+0.2875*Cload
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 150 of 253

 PDUW24DGZ

8.73 PDUW24DGZ

Tri-State Output Pad with Input and Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0
0 1 - 0/1 1 1
lI
Sc /2

1 0/1 0 0/1 - 0
nf
i en 19

1 0/1 1 0/1 - 1
or
25

1 0/1 Z 0 - 1 m
tif

1 0/1 Z 1 - X at
0

io
\,\

Cell Information n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6080 nW
VDDPST 4.0602 nW

Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 151 of 253

 PDUW24DGZ

Value Unit

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0629 pF
PAD 2.8467 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Propagation Delay M
Group1
C Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL
C
1.3710+0.0172*Cload 1.4225+0.0137*Cload 1.4430+0.0133*Cload
I PAD TP LH
on 9
1.4940+0.0166*Cload 1.5455+0.0135*Cload 1.6040+0.0123*Cload
A

Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

m

fid 7
OEN PAD TP HZ 4.1940+0.0012*Cload 4.2080 4.2080
bi

OEN PAD TP LZ 2.4070+0.0002*Cload

en 46 ic 2.4090 2.4090
en 06/

OEN PAD TP ZH 1.9280+0.0218*Cload 2.0445+0.0141*Cload

tia 2.1290+0.0124*Cload
9
t\

OEN PAD TP ZL 1.1630+0.0192*Cload 1.2365+0.0143*Cload

lI 1.2810+0.0134*Cload
Sc /2

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf

nf (> 0.3000)pf
PAD C TP HL 0.9404+0.3100*Cload 0.9432+0.2340*Cload 0.9465+0.2050*Cload
i en 19

PAD C TP LH 0.6025+0.3250*Cload
or
0.6036+0.2940*Cload 0.6043+0.2880*Cload
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 152 of 253

 PDUWDGZ

8.74 PDUWDGZ

Input Pad with Enable Controlled Pull-Up, High-Volt Tolerant

REN

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
C
M
C
Truth Table
INPUT OUTPUT
C
PAD REN C
on 9
A
m

0 0/1 0 fid 7
1 0/1 1
bi

Z 0 1
en 46 ic
en 06/

Z 1 X
tia
9
t\

lI
Sc /2

Cell Information
nf
i en 19

Value Unit or
25

Cell Width 30.000 um m

tif

Cell Height 190.000 um at

0

Pad Number 1 - io
\,\

n
In

Leakage Power
c\

Value Unit
.

VDD 3.6739 nW
VDDPST 4.1394 nW

Pin Capacitance
Value Unit
PAD 3.3135 pF
REN 0.0613 pF

Propagation Delay
Group1 Group2 Group3
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 153 of 253

 PDUWDGZ

Group1 Group2 Group3

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL 0.9392+0.3050*Cload 0.9422+0.2300*Cload 0.9470+0.2000*Cload
PAD C TP LH 0.6022+0.3350*Cload 0.6037+0.2920*Cload 0.6044+0.2875*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 154 of 253

 PDXO01DG

8.75 PDXO01DG

Crystal Oscillator I/O

XC

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

XI XO
TS
Truth Table M
INPUT OUTPUT C
XIN XOUT XC C
0 1 0 on 9
A

1 0 1
m

fid 7
bi

Cell Information en 46 ic
en 06/

Value Unit tia

9
t\

Cell Width 60.000 um

Cell Height 190.000 um
lI
Sc /2

Pad Number 2 -
nf
i en 19

or
25

m
tif

Leakage Power
Value Unit
at
0

VDD 1.5480 nW
io
\,\

VDDPST 3.3045 nW n
In
c\

Pin Capacitance
.

Value Unit
XIN 2.7252 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
XIN XOUT TP HL 0.7580+0.0790*Cload 0.7610+0.0784*Cload 0.7480+0.0790*Cload
XIN XOUT TP LH 0.7950+0.0666*Cload 0.8290+0.0632*Cload 0.8240+0.0634*Cload
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
XOUT XC TP HL 1.0185+0.5500*Cload 1.0270+0.3200*Cload 1.0480+0.2000*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 155 of 253

 TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019
PDXO01DG

156 of 253
n
io
at
0.9885+0.1750*Cload

m
Group3

or .
nf c\
lI In
tia \,\
0.9693+0.2920*Cload

en 46 ic
tif
Group2

4
fid 7
on 9
9 i en 19

TSMC Standard I/O TPZN40LPGV2OD3 Databook

0
C Sc /2
C t\ 25
0.9639+0.4300*Cload

M en 06/
TS
Group1

bi
m
A
XOUT XC TP LH
 PDXO02DG

8.76 PDXO02DG

Crystal Oscillator I/O

XC

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

XI XO
TS
Truth Table M
INPUT OUTPUT C
XIN XOUT XC C
0 1 0 on 9
A

1 0 1
m

fid 7
bi

Cell Information en 46 ic
en 06/

Value Unit tia

9
t\

Cell Width 60.000 um

Cell Height 190.000 um
lI
Sc /2

Pad Number 2 -
nf
i en 19

or
25

m
tif

Leakage Power
Value Unit
at
0

VDD 1.5479 nW
io
\,\

VDDPST 3.2873 nW n
In
c\

Pin Capacitance
.

Value Unit
XIN 2.7252 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
XIN XOUT TP HL 0.7318+0.0459*Cload 0.8060+0.0394*Cload 0.8140+0.0390*Cload
XIN XOUT TP LH 0.7788+0.0409*Cload 0.8690+0.0332*Cload 0.8950+0.0320*Cload
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
XOUT XC TP HL 1.0190+0.5000*Cload 1.0270+0.3200*Cload 1.0480+0.2000*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 157 of 253

 TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019
PDXO02DG

158 of 253
n
io
at
0.9885+0.1750*Cload

m
Group3

or .
nf c\
lI In
tia \,\
0.9694+0.2900*Cload

en 46 ic
tif
Group2

4
fid 7
on 9
9 i en 19

TSMC Standard I/O TPZN40LPGV2OD3 Databook

0
C Sc /2
C t\ 25
0.9639+0.4300*Cload

M en 06/
TS
Group1

bi
m
A
XOUT XC TP LH
 PDXO03DG

8.77 PDXO03DG

Crystal Oscillator I/O

XC

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

XI XO
TS
Truth Table M
INPUT OUTPUT C
XIN XOUT XC C
0 1 0 on 9
A

1 0 1
m

fid 7
bi

Cell Information en 46 ic
en 06/

Value Unit tia

9
t\

Cell Width 60.000 um

Cell Height 190.000 um
lI
Sc /2

Pad Number 2 -
nf
i en 19

or
25

m
tif

Leakage Power
Value Unit
at
0

VDD 1.5480 nW
io
\,\

VDDPST 3.3078 nW n
In
c\

Pin Capacitance
.

Value Unit
XIN 2.7252 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
XIN XOUT TP HL 0.8022+0.0343*Cload 0.8760+0.0280*Cload 0.9070+0.0266*Cload
XIN XOUT TP LH 0.8600+0.0310*Cload 0.9320+0.0248*Cload 0.9760+0.0228*Cload
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
XOUT XC TP HL 1.0185+0.5500*Cload 1.0270+0.3200*Cload 1.0480+0.2000*Cload
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 159 of 253

 TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019
PDXO03DG

160 of 253
n
io
at
0.9885+0.1750*Cload

m
Group3

or .
nf c\
lI In
tia \,\
0.9695+0.2880*Cload

en 46 ic
tif
Group2

4
fid 7
on 9
9 i en 19

TSMC Standard I/O TPZN40LPGV2OD3 Databook

0
C Sc /2
C t\ 25
0.9639+0.4300*Cload

M en 06/
TS
Group1

bi
m
A
XOUT XC TP LH
 PDXOE1DG

8.78 PDXOE1DG

Crystal Oscillator I/O with High Enable

XE XC

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
XI XO M
Truth Table
C
INPUT OUTPUT
C
E XIN XOUT XC
on 9
A

0 0/1 1 0
m

fid 7
1 0 1 0
bi

1 1 0 1
en 46 ic
en 06/

tia
9
t\

Cell Information lI
Sc /2

Value Unit
nf
i

Cell Width 60.000 um

en 19

or
25

Cell Height 190.000 um m

tif

Pad Number 2 - at
0

io
\,\

Leakage Power n
In

Value Unit
c\

VDD 1.5480 nW
.

VDDPST 3.3435 nW

Pin Capacitance
Value Unit
E 0.0661 pF
XIN 2.7252 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 161 of 253

 PDXOE1DG

Group1 Group2 Group3

E XOUT TP HL 0.7750+0.0804*Cload 0.7820+0.0798*Cload 0.7830+0.0798*Cload
E XOUT TP LH 5.7420+0.3832*Cload 5.7300+0.3840*Cload 5.7300+0.3840*Cload
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
XIN XOUT TP HL 0.7580+0.0790*Cload 0.7610+0.0784*Cload 0.7480+0.0790*Cload
XIN XOUT TP LH 0.7950+0.0666*Cload 0.8290+0.0632*Cload 0.8240+0.0634*Cload
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
XOUT XC TP HL 1.0200+0.5000*Cload 1.0270+0.3200*Cload 1.0480+0.2000*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

XOUT XC TP LH 0.9639+0.4300*Cload
TS 0.9694+0.2900*Cload 0.9885+0.1750*Cload

M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 162 of 253

 PDXOE2DG

8.79 PDXOE2DG

Crystal Oscillator I/O with High Enable

XE XC

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
XI XO M
Truth Table
C
INPUT OUTPUT
C
E XIN XOUT XC
on 9
A

0 0/1 1 0
m

fid 7
1 0 1 0
bi

1 1 0 1
en 46 ic
en 06/

tia
9
t\

Cell Information lI
Sc /2

Value Unit
nf
i

Cell Width 60.000 um

en 19

or
25

Cell Height 190.000 um m

tif

Pad Number 2 - at
0

io
\,\

Leakage Power n
In

Value Unit
c\

VDD 1.5480 nW
.

VDDPST 3.3421 nW

Pin Capacitance
Value Unit
E 0.0661 pF
XIN 2.7252 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 163 of 253

 PDXOE2DG

Group1 Group2 Group3

E XOUT TP HL 0.7358+0.0418*Cload 0.7560+0.0402*Cload 0.7560+0.0402*Cload
E XOUT TP LH 6.0450+0.3826*Cload 6.0600+0.3820*Cload 6.0200+0.3840*Cload
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
XIN XOUT TP HL 0.7312+0.0460*Cload 0.8060+0.0394*Cload 0.8140+0.0390*Cload
XIN XOUT TP LH 0.7781+0.0410*Cload 0.8690+0.0332*Cload 0.8950+0.0320*Cload
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
XOUT XC TP HL 1.0190+0.5000*Cload 1.0250+0.3400*Cload 1.0480+0.2000*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

XOUT XC TP LH 0.9639+0.4300*Cload
TS 0.9693+0.2920*Cload 0.9885+0.1750*Cload

M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 164 of 253

 PDXOE3DG

8.80 PDXOE3DG

Crystal Oscillator I/O with High Enable

XE XC

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
XI XO M
Truth Table
C
INPUT OUTPUT
C
E XIN XOUT XC
on 9
A

0 0/1 1 0
m

fid 7
1 0 1 0
bi

1 1 0 1
en 46 ic
en 06/

tia
9
t\

Cell Information lI
Sc /2

Value Unit
nf
i

Cell Width 60.000 um

en 19

or
25

Cell Height 190.000 um m

tif

Pad Number 2 - at
0

io
\,\

Leakage Power n
In

Value Unit
c\

VDD 1.5480 nW
.

VDDPST 3.3426 nW

Pin Capacitance
Value Unit
E 0.0661 pF
XIN 2.7252 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 165 of 253

 PDXOE3DG

Group1 Group2 Group3

E XOUT TP HL 0.7289+0.0310*Cload 0.7640+0.0280*Cload 0.7820+0.0272*Cload
E XOUT TP LH 6.3260+0.3824*Cload 6.3400+0.3820*Cload 6.3000+0.3840*Cload
Timing Arc (< 10.0000)pf (10.0000-25.0000)pf (> 25.0000)pf
XIN XOUT TP HL 0.8021+0.0343*Cload 0.8720+0.0282*Cload 0.9070+0.0266*Cload
XIN XOUT TP LH 0.8600+0.0310*Cload 0.9320+0.0248*Cload 0.9760+0.0228*Cload
Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
XOUT XC TP HL 1.0185+0.5500*Cload 1.0270+0.3200*Cload 1.0480+0.2000*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

XOUT XC TP LH 0.9638+0.4300*Cload
TS 0.9692+0.2920*Cload 0.9885+0.1750*Cload

M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 166 of 253

 PRB08DGZ

8.81 PRB08DGZ

Tri-State Output Pad with Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.0478 nW

Pin Capacitance
Value Unit
I 0.0716 pF
OEN 0.0628 pF
PAD 3.1584 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 167 of 253

 PRB08DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8930+0.0470*Cload 1.9690+0.0416*Cload 2.0390+0.0402*Cload
I PAD TP LH 1.9040+0.0424*Cload 2.0190+0.0348*Cload 2.1350+0.0325*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3160+0.0002*Cload 3.3180 3.3180
OEN PAD TP LZ 2.9800 2.9810 2.9810

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.2310+0.0502*Cload
TS 2.4445+0.0363*Cload 2.6210+0.0328*Cload
OEN PAD TP ZL 1.5240+0.0556*Cload 1.7110+0.0430*Cload 1.8400+0.0404*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9397+0.3050*Cload 0.9427+0.2320*Cload 0.9480+0.2000*Cload
PAD C TP LH 0.6022+0.3350*Cload
C 0.6035+0.2940*Cload 0.6041+0.2885*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 168 of 253

 PRB08SDGZ

8.82 PRB08SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7483 nW
VDDPST 4.1084 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0628 pF
PAD 3.1584 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 169 of 253

 PRB08SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8930+0.0470*Cload 1.9690+0.0416*Cload 2.0390+0.0402*Cload
I PAD TP LH 1.9040+0.0424*Cload 2.0190+0.0348*Cload 2.1350+0.0325*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3170 3.3180 3.3180
OEN PAD TP LZ 2.9800 2.9810 2.9810

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.2310+0.0502*Cload
TS 2.4445+0.0363*Cload 2.6200+0.0328*Cload
OEN PAD TP ZL 1.5240+0.0556*Cload 1.7110+0.0430*Cload 1.8400+0.0404*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1535+0.2050*Cload
PAD C TP LH 1.0500+0.3000*Cload
C 1.0500+0.3000*Cload 1.0525+0.2850*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 170 of 253

 PRB12DGZ

8.83 PRB12DGZ

Tri-State Output Pad with Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.0482 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0748 pF
PAD 3.0810 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 171 of 253

 PRB12DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2650+0.0400*Cload 2.4105+0.0305*Cload 2.5390+0.0280*Cload
I PAD TP LH 2.3590+0.0346*Cload 2.5090+0.0254*Cload 2.6870+0.0218*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.8290+0.0004*Cload 4.8360 4.8370
OEN PAD TP LZ 4.0220 4.0195+0.0001*Cload 4.0230

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.2670+0.0456*Cload
TS 2.5230+0.0292*Cload 2.7990+0.0238*Cload
OEN PAD TP ZL 1.5960+0.0578*Cload 1.9505+0.0345*Cload 2.2370+0.0288*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9394+0.3100*Cload 0.9424+0.2320*Cload 0.9455+0.2050*Cload
PAD C TP LH 0.6018+0.3300*Cload
C 0.6032+0.2920*Cload 0.6042+0.2870*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 172 of 253

 PRB12SDGZ

8.84 PRB12SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1085 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0627 pF
PAD 3.0810 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 173 of 253

 PRB12SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2650+0.0400*Cload 2.4105+0.0305*Cload 2.5390+0.0280*Cload
I PAD TP LH 2.3590+0.0346*Cload 2.5090+0.0254*Cload 2.6870+0.0218*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.8290+0.0004*Cload 4.8335+0.0001*Cload 4.8370
OEN PAD TP LZ 4.0220 4.0220 4.0230

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.2670+0.0456*Cload
TS 2.5230+0.0292*Cload 2.7990+0.0238*Cload
OEN PAD TP ZL 1.5960+0.0578*Cload 1.9505+0.0345*Cload 2.2370+0.0288*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1480+0.3000*Cload 1.1500+0.2400*Cload 1.1535+0.2050*Cload
PAD C TP LH 1.0485+0.3500*Cload
C 1.0500+0.3000*Cload 1.0500+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 174 of 253

 PRB16DGZ

8.85 PRB16DGZ

Tri-State Output Pad with Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7485 nW
VDDPST 4.0475 nW

Pin Capacitance
Value Unit
I 0.0595 pF
OEN 0.0749 pF
PAD 3.0032 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 175 of 253

 PRB16DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6750+0.0366*Cload 2.8385+0.0265*Cload 3.0370+0.0226*Cload
I PAD TP LH 2.8630+0.0296*Cload 2.9840+0.0226*Cload 3.2370+0.0178*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.7170+0.0010*Cload 6.7285+0.0001*Cload 6.7250+0.0001*Cload
OEN PAD TP LZ 5.0670 5.0680 5.0680

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.3000+0.0444*Cload
TS 2.5795+0.0265*Cload 2.9150+0.0200*Cload
OEN PAD TP ZL 1.6090+0.0644*Cload 2.0820+0.0338*Cload 2.5590+0.0244*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9386+0.3150*Cload 0.9417+0.2320*Cload 0.9445+0.2050*Cload
PAD C TP LH 0.6012+0.3200*Cload
C 0.6023+0.2940*Cload 0.6033+0.2875*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 176 of 253

 PRB16SDGZ

8.86 PRB16SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7483 nW
VDDPST 4.1081 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0628 pF
PAD 3.0032 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 177 of 253

 PRB16SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6750+0.0366*Cload 2.8385+0.0265*Cload 3.0370+0.0226*Cload
I PAD TP LH 2.8630+0.0296*Cload 2.9840+0.0226*Cload 3.2370+0.0178*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.7190+0.0006*Cload 6.7255+0.0001*Cload 6.7230+0.0001*Cload
OEN PAD TP LZ 5.0680 5.0680 5.0680

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.3020+0.0442*Cload
TS 2.5795+0.0265*Cload 2.9150+0.0200*Cload
OEN PAD TP ZL 1.6110+0.0642*Cload 2.0830+0.0338*Cload 2.5590+0.0244*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1470+0.3000*Cload 1.1490+0.2400*Cload 1.1525+0.2050*Cload
PAD C TP LH 1.0480+0.3000*Cload
C 1.0500+0.2800*Cload 1.0490+0.2900*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 178 of 253

 PRB24DGZ

8.87 PRB24DGZ

Tri-State Output Pad with Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.0469 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0750 pF
PAD 2.8477 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 179 of 253

 PRB24DGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9540+0.0282*Cload 3.0800+0.0206*Cload 3.3060+0.0163*Cload
I PAD TP LH 3.4280+0.0246*Cload 3.5155+0.0195*Cload 3.7390+0.0153*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 9.4180+0.0006*Cload 9.4275+0.0001*Cload 9.4240+0.0001*Cload
OEN PAD TP LZ 6.4460 6.4460 6.4460

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.4180+0.0450*Cload
TS 2.7255+0.0253*Cload 3.1080+0.0179*Cload
OEN PAD TP ZL 1.5600+0.0518*Cload 1.9205+0.0295*Cload 2.4300+0.0197*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
0.9405+0.3100*Cload 0.9436+0.2300*Cload 0.9465+0.2050*Cload
PAD C TP LH 0.6024+0.3300*Cload
C 0.6037+0.2920*Cload 0.6047+0.2870*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 180 of 253

 PRB24SDGZ

8.88 PRB24SDGZ

Tri-State Output Pad with Schmitt Trigger Input and Limited Slew Rate, High-Volt Tolerant

C
PAD

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
I
M
OEN
C
C
Truth Table on 9
A

INPUT OUTPUT
m

OEN I PAD PAD C

fid 7
bi

0 0 - 0 0
en 46 ic
en 06/

0 1 - 1 1 tia
9

1 0/1 0 - 0
t\

1 0/1 1 - 1
lI
Sc /2

1 0/1 Z - X
nf
i en 19

or
25

m
tif

Cell Information
Value Unit
at
0

Cell Width 30.000 um

io
\,\

Cell Height 190.000 um n

In

Pad Number 1 -
c\
.

Leakage Power
Value Unit
VDD 3.7484 nW
VDDPST 4.1072 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0750 pF
PAD 2.8477 pF

TSMC Standard I/O TPZN40LPGV2OD3 Databook 181 of 253

 PRB24SDGZ

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9540+0.0282*Cload 3.0800+0.0206*Cload 3.3060+0.0163*Cload
I PAD TP LH 3.4290+0.0244*Cload 3.5155+0.0195*Cload 3.7380+0.0153*Cload
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 9.4110+0.0016*Cload 9.4255+0.0003*Cload 9.4380
OEN PAD TP LZ 6.4470 6.4470 6.4470

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

OEN PAD TP ZH 2.4180+0.0450*Cload
TS 2.7255+0.0253*Cload 3.1080+0.0179*Cload
OEN PAD TP ZL 1.5600+0.0518*Cload 1.9205+0.0295*Cload 2.4300+0.0197*Cload
Timing Arc
M
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
PAD C TP HL
C
1.1490+0.3000*Cload 1.1520+0.2200*Cload 1.1545+0.2050*Cload
PAD C TP LH 1.0500+0.3000*Cload
C 1.0500+0.3000*Cload 1.0525+0.2850*Cload
on 9
A
m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 182 of 253

 PRCUT

8.89 PRCUT

Power-Cut Cell between Digital Domain A and Digital Domain B with VSS Shorted and the Rest
of Rails Cut

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

VSS
TS
VSS

M
C
C
on 9
A

Cell Information
m

Value Unit
fid 7
bi

Cell Width 30.000 um en 46 ic

Cell Height 190.000 um
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 183 of 253

 PRD08DGZ

8.90 PRD08DGZ

Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6724 nW
VDDPST 4.0692 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 184 of 253

 PRD08DGZ

Value Unit
PAD 3.1581 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8900+0.0470*Cload 1.9675+0.0415*Cload 2.0370+0.0401*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.9050+0.0424*Cload 2.0175+0.0349*Cload 2.1380+0.0325*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3050
M 3.3050 3.3050
OEN PAD TP LZ 2.9800
C 2.9810 2.9810
OEN PAD TP ZH 2.2320+0.0502*Cload
C 2.4430+0.0364*Cload 2.6160+0.0329*Cload
OEN PAD TP ZL 1.4990+0.0566*Cload
on 9 1.6980+0.0430*Cload 1.8260+0.0404*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8864+0.3050*Cload 0.8891+0.2340*Cload 0.8935+0.2025*Cload
bi

PAD C TP LH 0.6260+0.3300*Cload 0.6273+0.2940*Cload

en 46 ic 0.6280+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 185 of 253

 PRD08SDGZ

8.91 PRD08SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

m
tif

1 0/1 Z - 0
at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6724 nW
VDDPST 4.1295 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 186 of 253

 PRD08SDGZ

Value Unit
OEN 0.0629 pF
PAD 3.1581 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 1.8900+0.0470*Cload 1.9675+0.0415*Cload 2.0360+0.0401*Cload
I PAD TP LH
TS
1.9050+0.0424*Cload 2.0200+0.0348*Cload 2.1300+0.0326*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3050
C 3.3050 3.3050
OEN PAD TP LZ 2.9800
C 2.9810 2.9810
OEN PAD TP ZH 2.2320+0.0502*Cload
on 9 2.4430+0.0364*Cload 2.6230+0.0328*Cload
A

OEN PAD TP ZL 1.4990+0.0566*Cload 1.6980+0.0430*Cload 1.8260+0.0404*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1020+0.3000*Cload 1.1040+0.2400*Cload

en 46 ic 1.1075+0.2050*Cload
en 06/

PAD C TP LH 1.0980+0.3000*Cload 1.1000+0.2800*Cload 1.0990+0.2900*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 187 of 253

 PRD12DGZ

8.92 PRD12DGZ

Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.0698 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0628 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 188 of 253

 PRD12DGZ

Value Unit
PAD 3.0807 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2640+0.0398*Cload 2.4100+0.0304*Cload 2.5330+0.0280*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 2.3600+0.0346*Cload 2.5100+0.0254*Cload 2.6880+0.0218*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.7060+0.0002*Cload
M 4.7080 4.7080
OEN PAD TP LZ 4.0220
C 4.0220 4.0220
OEN PAD TP ZH 2.2680+0.0456*Cload
C 2.5240+0.0292*Cload 2.8000+0.0238*Cload
OEN PAD TP ZL 1.5660+0.0592*Cload
on 9 1.9390+0.0346*Cload 2.2310+0.0288*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8860+0.3100*Cload 0.8888+0.2340*Cload 0.8932+0.2020*Cload
bi

PAD C TP LH 0.6255+0.3300*Cload 0.6267+0.2940*Cload

en 46 ic 0.6280+0.2870*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 189 of 253

 PRD12SDGZ

8.93 PRD12SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

m
tif

1 0/1 Z - 0
at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1304 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 190 of 253

 PRD12SDGZ

Value Unit
OEN 0.0628 pF
PAD 3.0807 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.2640+0.0398*Cload 2.4100+0.0304*Cload 2.5330+0.0280*Cload
I PAD TP LH
TS
2.3600+0.0346*Cload 2.5100+0.0254*Cload 2.6880+0.0218*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.7060+0.0002*Cload
C 4.7080 4.7080
OEN PAD TP LZ 4.0220
C 4.0220 4.0220
OEN PAD TP ZH 2.2680+0.0456*Cload
on 9 2.5240+0.0292*Cload 2.8000+0.0238*Cload
A

OEN PAD TP ZL 1.5660+0.0592*Cload 1.9390+0.0346*Cload 2.2310+0.0288*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1005+0.3500*Cload 1.1050+0.2200*Cload

en 46 ic 1.1075+0.2050*Cload
en 06/

PAD C TP LH 1.0965+0.3500*Cload 1.0980+0.3000*Cload 1.1005+0.2850*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 191 of 253

 PRD16DGZ

8.94 PRD16DGZ

Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6725 nW
VDDPST 4.0690 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 192 of 253

 PRD16DGZ

Value Unit
PAD 3.0029 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6740+0.0364*Cload 2.8355+0.0265*Cload 3.0330+0.0226*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 2.8650+0.0296*Cload 2.9850+0.0226*Cload 3.2390+0.0178*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.3130
M 6.3140 6.3140
OEN PAD TP LZ 5.0680
C 5.0680 5.0680
OEN PAD TP ZH 2.3010+0.0444*Cload
C 2.5805+0.0265*Cload 2.9160+0.0200*Cload
OEN PAD TP ZL 1.5730+0.0662*Cload
on 9 2.0655+0.0341*Cload 2.5550+0.0244*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8850+0.3100*Cload 0.8880+0.2320*Cload 0.8921+0.2025*Cload
bi

PAD C TP LH 0.6247+0.3250*Cload 0.6258+0.2940*Cload

en 46 ic 0.6266+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 193 of 253

 PRD16SDGZ

8.95 PRD16SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

m
tif

1 0/1 Z - 0
at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1297 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 194 of 253

 PRD16SDGZ

Value Unit
OEN 0.0629 pF
PAD 3.0029 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.6720+0.0366*Cload 2.8355+0.0265*Cload 3.0330+0.0226*Cload
I PAD TP LH
TS
2.8660+0.0294*Cload 2.9850+0.0226*Cload 3.2380+0.0178*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.3130
C 6.3140 6.3150
OEN PAD TP LZ 5.0660+0.0002*Cload
C 5.0680 5.0680
OEN PAD TP ZH 2.3010+0.0444*Cload
on 9 2.5805+0.0265*Cload 2.9160+0.0200*Cload
A

OEN PAD TP ZL 1.5730+0.0662*Cload 2.0680+0.0340*Cload 2.5550+0.0244*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1000+0.3000*Cload 1.1040+0.2200*Cload

en 46 ic 1.1080+0.2000*Cload
en 06/

PAD C TP LH 1.0955+0.3500*Cload 1.0980+0.2800*Cload 1.0970+0.2900*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 195 of 253

 PRD24DGZ

8.96 PRD24DGZ

Tri-State Output Pad with Input, Pull-Down, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS PAD
M
I C
C
OEN on 9
A
m

Truth Table
fid 7
bi

INPUT OUTPUT en 46 ic
en 06/

OEN I PAD PAD C

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
i

1 0/1 1 - 1
en 19

or
25

1 0/1 Z - 0
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.0689 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 196 of 253

 PRD24DGZ

Value Unit
PAD 2.8474 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9500+0.0284*Cload 3.0805+0.0205*Cload 3.3030+0.0163*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 3.4290+0.0246*Cload 3.5165+0.0195*Cload 3.7400+0.0153*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 8.4830+0.0006*Cload
M 8.4890 8.4830+0.0001*Cload
OEN PAD TP LZ 6.4450
C 6.4460 6.4460
OEN PAD TP ZH 2.4190+0.0450*Cload
C 2.7265+0.0253*Cload 3.1090+0.0179*Cload
OEN PAD TP ZL 1.5380+0.0528*Cload
on 9 1.9105+0.0297*Cload 2.4230+0.0198*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.8866+0.3100*Cload 0.8894+0.2340*Cload 0.8935+0.2030*Cload
bi

PAD C TP LH 0.6260+0.3250*Cload 0.6273+0.2940*Cload

en 46 ic 0.6282+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 197 of 253

 PRD24SDGZ

8.97 PRD24SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Down, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

m
tif

1 0/1 Z - 0
at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.1284 nW

Pin Capacitance
Value Unit
I 0.0600 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 198 of 253

 PRD24SDGZ

Value Unit
OEN 0.0630 pF
PAD 2.8474 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.9500+0.0284*Cload 3.0805+0.0205*Cload 3.3030+0.0163*Cload
I PAD TP LH
TS
3.4290+0.0246*Cload 3.5165+0.0195*Cload 3.7400+0.0153*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 8.4830+0.0006*Cload
C 8.4875+0.0001*Cload 8.4910
OEN PAD TP LZ 6.4460
C 6.4460 6.4460
OEN PAD TP ZH 2.4190+0.0450*Cload
on 9 2.7265+0.0253*Cload 3.1090+0.0179*Cload
A

OEN PAD TP ZL 1.5380+0.0528*Cload 1.9105+0.0297*Cload 2.4230+0.0198*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1020+0.3000*Cload 1.1040+0.2400*Cload

en 46 ic 1.1100+0.2000*Cload
en 06/

PAD C TP LH 1.0980+0.3000*Cload 1.1000+0.2800*Cload 1.0990+0.2900*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 199 of 253

 PRDW08DGZ

8.98 PRDW08DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Down, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
1 0/1 0 0/1 - 0
i en 19

1 0/1 1 0/1 - 1
or
25

m
tif

1 0/1 Z 0 - 0
1 0/1 Z 1 - X
at
0

io
\,\

Cell Information
n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.0474 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 200 of 253

 PRDW08DGZ

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.1579 pF
REN 0.0609 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8930+0.0470*Cload
C 1.9690+0.0416*Cload 2.0390+0.0402*Cload
I PAD TP LH 1.9040+0.0424*Cload
C 2.0155+0.0349*Cload 2.1350+0.0325*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 3.3160+0.0002*Cload 3.3190 3.3190

m

OEN PAD TP LZ 2.9800

fid 7 2.9810 2.9810
bi

OEN PAD TP ZH 2.2290+0.0504*Cload 2.4445+0.0363*Cload

en 46 ic 2.6200+0.0328*Cload
OEN PAD TP ZL 1.5240+0.0556*Cload 1.7110+0.0430*Cload 1.8400+0.0404*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9400+0.3000*Cload 0.9428+0.2320*Cload

lI 0.9480+0.2000*Cload
Sc /2

PAD C TP LH 0.6025+0.3300*Cload 0.6037+0.2940*Cload

nf 0.6047+0.2875*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 201 of 253

 PRDW12DGZ

8.99 PRDW12DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Down, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
1 0/1 0 0/1 - 0
i en 19

1 0/1 1 0/1 - 1
or
25

m
tif

1 0/1 Z 0 - 0
1 0/1 Z 1 - X
at
0

io
\,\

Cell Information
n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.0480 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 202 of 253

 PRDW12DGZ

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0627 pF
PAD 3.0805 pF
REN 0.0608 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2660+0.0398*Cload
C 2.4105+0.0305*Cload 2.5390+0.0280*Cload
I PAD TP LH 2.3600+0.0344*Cload
C 2.5090+0.0254*Cload 2.6870+0.0218*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 4.8280+0.0004*Cload 4.8350 4.8360

m

OEN PAD TP LZ 4.0220

fid 7 4.0220 4.0220
bi

OEN PAD TP ZH 2.2670+0.0456*Cload 2.5195+0.0293*Cload

en 46 ic 2.7980+0.0238*Cload
OEN PAD TP ZL 1.5940+0.0580*Cload 1.9505+0.0345*Cload 2.2370+0.0288*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9397+0.3050*Cload 0.9426+0.2320*Cload

lI 0.9455+0.2050*Cload
Sc /2

PAD C TP LH 0.6022+0.3250*Cload 0.6035+0.2920*Cload

nf 0.6042+0.2875*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 203 of 253

 PRDW16DGZ

8.100 PRDW16DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Down, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
1 0/1 0 0/1 - 0
i en 19

1 0/1 1 0/1 - 1
or
25

m
tif

1 0/1 Z 0 - 0
1 0/1 Z 1 - X
at
0

io
\,\

Cell Information
n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6721 nW
VDDPST 4.0476 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 204 of 253

 PRDW16DGZ

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.0027 pF
REN 0.0608 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6760+0.0364*Cload
C 2.8385+0.0265*Cload 3.0370+0.0226*Cload
I PAD TP LH 2.8630+0.0296*Cload
C 2.9840+0.0226*Cload 3.2370+0.0178*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 6.7170+0.0006*Cload 6.7265+0.0001*Cload 6.7300

m

OEN PAD TP LZ 5.0680

fid 7 5.0680 5.0680
bi

OEN PAD TP ZH 2.3000+0.0444*Cload 2.5795+0.0265*Cload

en 46 ic 2.9150+0.0200*Cload
OEN PAD TP ZL 1.6110+0.0642*Cload 2.0795+0.0339*Cload 2.5590+0.0244*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9389+0.3050*Cload 0.9416+0.2340*Cload

lI 0.9470+0.2000*Cload
Sc /2

PAD C TP LH 0.6012+0.3300*Cload 0.6024+0.2940*Cload

nf 0.6031+0.2880*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 205 of 253

 PRDW24DGZ

8.101 PRDW24DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Down, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
PAD
M
I
C
C
on 9
A

OEN
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD REN PAD C tia

9
t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
1 0/1 0 0/1 - 0
i en 19

1 0/1 1 0/1 - 1
or
25

m
tif

1 0/1 Z 0 - 0
1 0/1 Z 1 - X
at
0

io
\,\

Cell Information
n
In

Value Unit
c\

Cell Width 30.000 um

.

Cell Height 190.000 um

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6723 nW
VDDPST 4.0470 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 206 of 253

 PRDW24DGZ

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0629 pF
PAD 2.8472 pF
REN 0.0609 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9520+0.0284*Cload
C 3.0800+0.0206*Cload 3.3060+0.0163*Cload
I PAD TP LH 3.4290+0.0244*Cload
C 3.5155+0.0195*Cload 3.7380+0.0153*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 9.4170+0.0006*Cload 9.4285+0.0001*Cload 9.4250+0.0001*Cload

m

OEN PAD TP LZ
fid 7
6.4440+0.0002*Cload 6.4460 6.4390+0.0001*Cload
bi

OEN PAD TP ZH 2.4170+0.0450*Cload 2.7255+0.0253*Cload

en 46 ic 3.1080+0.0179*Cload
OEN PAD TP ZL 1.5610+0.0516*Cload 1.9205+0.0295*Cload 2.4220+0.0198*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9406+0.3100*Cload 0.9436+0.2320*Cload

lI 0.9465+0.2050*Cload
Sc /2

PAD C TP LH 0.6027+0.3250*Cload 0.6038+0.2940*Cload

nf 0.6046+0.2880*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 207 of 253

 PRO08CDG

8.102 PRO08CDG

Output Pad with Limited Slew Rate

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0551 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.1580 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8910+0.0472*Cload 1.9715+0.0415*Cload 2.0380+0.0402*Cload
I PAD TP LH 1.9030+0.0424*Cload 2.0180+0.0348*Cload 2.1340+0.0325*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 208 of 253

 PRO12CDG

8.103 PRO12CDG

Output Pad with Limited Slew Rate

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0559 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.0806 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2660+0.0398*Cload 2.4130+0.0304*Cload 2.5380+0.0280*Cload
I PAD TP LH 2.3580+0.0346*Cload 2.5080+0.0254*Cload 2.6870+0.0218*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 209 of 253

 PRO16CDG

8.104 PRO16CDG

Output Pad with Limited Slew Rate

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0554 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0597 pF
PAD 3.0030 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6760+0.0364*Cload 2.8375+0.0265*Cload 3.0360+0.0226*Cload
I PAD TP LH 2.8640+0.0294*Cload 2.9805+0.0227*Cload 3.2370+0.0178*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 210 of 253

 PRO24CDG

8.105 PRO24CDG

Output Pad with Limited Slew Rate

PAD
I

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Truth Table
TS
INPUT OUTPUT M
I PAD C
0 0
1 1
C
on 9
A
m

Cell Information
fid 7
bi

Value Unit en 46 ic
en 06/

Cell Width 30.000 um tia

9

Cell Height 190.000 um

t\

Pad Number 1 -
lI
Sc /2

nf
i en 19

Leakage Power
or
25

m
tif

Value Unit
VDD 3.6078 nW
at
0

VDDPST 4.0546 nW
io
\,\

n
In

Pin Capacitance
c\

Value Unit
.

I 0.0600 pF
PAD 2.8473 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9520+0.0284*Cload 3.0825+0.0205*Cload 3.3050+0.0163*Cload
I PAD TP LH 3.4270+0.0246*Cload 3.5145+0.0195*Cload 3.7380+0.0153*Cload

TSMC Standard I/O TPZN40LPGV2OD3 Databook 211 of 253

 PRT08DGZ

8.106 PRT08DGZ

Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

Truth Table tia

9
t\

INPUT OUTPUT
lI
Sc /2

OEN I PAD
0 0 0
nf
i en 19

0 1 1
or
25

1 0/1 Z m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6809 nW
VDDPST 4.0551 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 212 of 253

 PRT08DGZ

Value Unit
OEN 0.0628 pF
PAD 3.1580 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 1.8910+0.0472*Cload 1.9715+0.0415*Cload 2.0380+0.0402*Cload
I PAD TP LH
TS
1.9030+0.0424*Cload 2.0180+0.0348*Cload 2.1340+0.0325*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3270+0.0002*Cload
C 3.3300 3.3300
OEN PAD TP LZ 2.9800
C 2.9810 2.9810
OEN PAD TP ZH 2.2300+0.0502*Cload
on 9 2.4435+0.0363*Cload 2.6200+0.0328*Cload
A

OEN PAD TP ZL 1.5230+0.0556*Cload 1.7090+0.0430*Cload 1.8390+0.0404*Cload

m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 213 of 253

 PRT12DGZ

8.107 PRT12DGZ

Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

Truth Table tia

9
t\

INPUT OUTPUT
lI
Sc /2

OEN I PAD
0 0 0
nf
i en 19

0 1 1
or
25

1 0/1 Z m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6810 nW
VDDPST 4.0559 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 214 of 253

 PRT12DGZ

Value Unit
OEN 0.0627 pF
PAD 3.0806 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.2660+0.0398*Cload 2.4130+0.0304*Cload 2.5380+0.0280*Cload
I PAD TP LH
TS
2.3580+0.0346*Cload 2.5080+0.0254*Cload 2.6870+0.0218*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.8530+0.0006*Cload
C 4.8585+0.0001*Cload 4.8630
OEN PAD TP LZ 4.0220
C 4.0220 4.0230
OEN PAD TP ZH 2.2660+0.0456*Cload
on 9 2.5220+0.0292*Cload 2.7980+0.0238*Cload
A

OEN PAD TP ZL 1.5930+0.0580*Cload 1.9495+0.0345*Cload 2.2360+0.0288*Cload

m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 215 of 253

 PRT16DGZ

8.108 PRT16DGZ

Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

Truth Table tia

9
t\

INPUT OUTPUT
lI
Sc /2

OEN I PAD
0 0 0
nf
i en 19

0 1 1
or
25

1 0/1 Z m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6810 nW
VDDPST 4.0569 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 216 of 253

 PRT16DGZ

Value Unit
OEN 0.0749 pF
PAD 3.0030 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.6760+0.0364*Cload 2.8375+0.0265*Cload 3.0360+0.0226*Cload
I PAD TP LH
TS
2.8640+0.0294*Cload 2.9805+0.0227*Cload 3.2370+0.0178*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.7450+0.0008*Cload
C 6.7590 6.7600
OEN PAD TP LZ 5.0670
C 5.0680 5.0680
OEN PAD TP ZH 2.3010+0.0442*Cload
on 9 2.5795+0.0265*Cload 2.9150+0.0200*Cload
A

OEN PAD TP ZL 1.6080+0.0644*Cload 2.0785+0.0339*Cload 2.5580+0.0244*Cload

m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 217 of 253

 PRT24DGZ

8.109 PRT24DGZ

Tri-State Output Pad with Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
C
C
on 9
A
m

fid 7
bi

en 46 ic
en 06/

Truth Table tia

9
t\

INPUT OUTPUT
lI
Sc /2

OEN I PAD
0 0 0
nf
i en 19

0 1 1
or
25

1 0/1 Z m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6809 nW
VDDPST 4.0544 nW

Pin Capacitance
Value Unit
I 0.0600 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 218 of 253

 PRT24DGZ

Value Unit
OEN 0.0629 pF
PAD 2.8473 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.9520+0.0284*Cload 3.0825+0.0205*Cload 3.3050+0.0163*Cload
I PAD TP LH
TS
3.4270+0.0246*Cload 3.5145+0.0195*Cload 3.7380+0.0153*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 9.4490+0.0014*Cload
C 9.4645+0.0001*Cload 9.4630+0.0001*Cload
OEN PAD TP LZ 6.4450
C 6.4450 6.4450
OEN PAD TP ZH 2.4170+0.0450*Cload
on 9 2.7245+0.0253*Cload 3.1080+0.0179*Cload
A

OEN PAD TP ZL 1.5600+0.0516*Cload 1.9195+0.0295*Cload 2.4280+0.0197*Cload

m

fid 7
bi

en 46 ic
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 219 of 253

 PRU08DGZ

8.110 PRU08DGZ

Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 2.9790 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 220 of 253

 PRU08DGZ

Value Unit
PAD 3.1582 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8920+0.0472*Cload 1.9700+0.0416*Cload 2.0410+0.0402*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 1.9020+0.0424*Cload 2.0175+0.0347*Cload 2.1350+0.0324*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3300+0.0004*Cload
M 3.3315+0.0001*Cload 3.3350
OEN PAD TP LZ 2.9790
C 2.9790 2.9790
OEN PAD TP ZH 2.1890+0.0512*Cload
C 2.4160+0.0364*Cload 2.5960+0.0328*Cload
OEN PAD TP ZL 1.5210+0.0558*Cload
on 9 1.7075+0.0431*Cload 1.8410+0.0404*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9706+0.3000*Cload 0.9733+0.2340*Cload 0.9765+0.2050*Cload
bi

PAD C TP LH 0.5760+0.3350*Cload 0.5773+0.2940*Cload

en 46 ic 0.5781+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 221 of 253

 PRU08SDGZ

8.111 PRU08SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS
PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

1 0/1 Z - 1 m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6050 nW
VDDPST 3.0384 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 222 of 253

 PRU08SDGZ

Value Unit
OEN 0.0630 pF
PAD 3.1582 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 1.8920+0.0472*Cload 1.9700+0.0416*Cload 2.0410+0.0402*Cload
I PAD TP LH
TS
1.9030+0.0422*Cload 2.0175+0.0347*Cload 2.1350+0.0324*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 3.3300+0.0004*Cload
C 3.3350 3.3350
OEN PAD TP LZ 2.9790
C 2.9790 2.9790
OEN PAD TP ZH 2.1890+0.0512*Cload
on 9 2.4125+0.0365*Cload 2.5950+0.0328*Cload
A

OEN PAD TP ZL 1.5210+0.0558*Cload 1.7100+0.0430*Cload 1.8410+0.0404*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1780+0.3000*Cload 1.1800+0.2400*Cload

en 46 ic 1.1835+0.2050*Cload
en 06/

PAD C TP LH 1.0080+0.3000*Cload 1.0100+0.2800*Cload 1.0090+0.2900*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 223 of 253

 PRU12DGZ

8.112 PRU12DGZ

Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6048 nW
VDDPST 2.9744 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0628 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 224 of 253

 PRU12DGZ

Value Unit
PAD 3.0807 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2670+0.0398*Cload 2.4115+0.0305*Cload 2.5400+0.0280*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 2.3580+0.0344*Cload 2.5095+0.0253*Cload 2.6900+0.0217*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.9120+0.0006*Cload
M 4.9185+0.0001*Cload 4.9230
OEN PAD TP LZ 4.0210
C 4.0210 4.0210
OEN PAD TP ZH 2.2260+0.0468*Cload
C 2.4950+0.0294*Cload 2.7800+0.0238*Cload
OEN PAD TP ZL 1.5930+0.0580*Cload
on 9 1.9495+0.0345*Cload 2.2370+0.0288*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9703+0.3100*Cload 0.9732+0.2320*Cload 0.9765+0.2050*Cload
bi

PAD C TP LH 0.5758+0.3200*Cload 0.5768+0.2940*Cload

en 46 ic 0.5777+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 225 of 253

 PRU12SDGZ

8.113 PRU12SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS
PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

1 0/1 Z - 1 m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.0340 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 226 of 253

 PRU12SDGZ

Value Unit
OEN 0.0628 pF
PAD 3.0807 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.2670+0.0398*Cload 2.4115+0.0305*Cload 2.5400+0.0280*Cload
I PAD TP LH
TS
2.3580+0.0344*Cload 2.5060+0.0254*Cload 2.6900+0.0217*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 4.9140+0.0004*Cload
C 4.9185+0.0001*Cload 4.9230
OEN PAD TP LZ 4.0210
C 4.0210 4.0210
OEN PAD TP ZH 2.2240+0.0470*Cload
on 9 2.4950+0.0294*Cload 2.7800+0.0238*Cload
A

OEN PAD TP ZL 1.5930+0.0580*Cload 1.9495+0.0345*Cload 2.2370+0.0288*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1780+0.3000*Cload 1.1800+0.2400*Cload

en 46 ic 1.1835+0.2050*Cload
en 06/

PAD C TP LH 1.0065+0.3500*Cload 1.0080+0.3000*Cload 1.0105+0.2850*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 227 of 253

 PRU16DGZ

8.114 PRU16DGZ

Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6050 nW
VDDPST 2.9744 nW

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 228 of 253

 PRU16DGZ

Value Unit
PAD 3.0030 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6750+0.0366*Cload 2.8385+0.0265*Cload 3.0380+0.0226*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 2.8610+0.0296*Cload 2.9785+0.0227*Cload 3.2340+0.0178*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.9130+0.0008*Cload
M 6.9215+0.0001*Cload 6.9270
OEN PAD TP LZ 5.0670
C 5.0670 5.0670
OEN PAD TP ZH 2.2590+0.0456*Cload
C 2.5535+0.0267*Cload 2.8990+0.0200*Cload
OEN PAD TP ZL 1.6080+0.0644*Cload
on 9 2.0785+0.0339*Cload 2.5580+0.0244*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9695+0.3050*Cload 0.9725+0.2300*Cload 0.9755+0.2050*Cload
bi

PAD C TP LH 0.5749+0.3200*Cload 0.5760+0.2920*Cload

en 46 ic 0.5769+0.2875*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 229 of 253

 PRU16SDGZ

8.115 PRU16SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS
PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

1 0/1 Z - 1 m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6048 nW
VDDPST 3.0243 nW

Pin Capacitance
Value Unit
I 0.0597 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 230 of 253

 PRU16SDGZ

Value Unit
OEN 0.0629 pF
PAD 3.0030 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.6750+0.0366*Cload 2.8385+0.0265*Cload 3.0380+0.0226*Cload
I PAD TP LH
TS
2.8610+0.0296*Cload 2.9810+0.0226*Cload 3.2340+0.0178*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 6.9100+0.0012*Cload
C 6.9280 6.9280
OEN PAD TP LZ 5.0670
C 5.0670 5.0670
OEN PAD TP ZH 2.2590+0.0456*Cload
on 9 2.5535+0.0267*Cload 2.8990+0.0200*Cload
A

OEN PAD TP ZL 1.6080+0.0644*Cload 2.0785+0.0339*Cload 2.5580+0.0244*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1770+0.3000*Cload 1.1790+0.2400*Cload

en 46 ic 1.1825+0.2050*Cload
en 06/

PAD C TP LH 1.0055+0.3500*Cload 1.0070+0.3000*Cload 1.0070+0.2900*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 231 of 253

 PRU24DGZ

8.116 PRU24DGZ

Tri-State Output Pad with Input, Pull-Up, and Limited Slew Rate, High-Volt Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS PAD

M
I C
OEN
C
on 9
A
m

Truth Table fid 7

bi

INPUT OUTPUT en 46 ic
OEN I PAD PAD C
en 06/

0 0 - 0 0
tia
9
t\

0 1 - 1 1 lI
Sc /2

1 0/1 0 - 0 nf
1 0/1 1 - 1
i en 19

or
25

1 0/1 Z - 1
m
tif

at
0

Cell Information io
\,\

Value Unit n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

Pad Number 1 -
.

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 2.9711 nW

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0630 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 232 of 253

 PRU24DGZ

Value Unit
PAD 2.8474 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9540+0.0282*Cload 3.0835+0.0205*Cload 3.3060+0.0163*Cload

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP LH 3.4260+0.0246*Cload 3.5135+0.0195*Cload 3.7360+0.0153*Cload
Timing Arc
TS
(< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 9.7290+0.0010*Cload
M 9.7440+0.0002*Cload 9.7520
OEN PAD TP LZ 6.4450
C 6.4450 6.4460
OEN PAD TP ZH 2.3720+0.0466*Cload
C 2.6995+0.0255*Cload 3.0940+0.0179*Cload
OEN PAD TP ZL 1.5590+0.0516*Cload
on 9 1.9185+0.0295*Cload 2.4280+0.0197*Cload
A

Timing Arc (< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf

m

PAD C TP HL
fid 7
0.9714+0.3050*Cload 0.9743+0.2300*Cload 0.9775+0.2050*Cload
bi

PAD C TP LH 0.5762+0.3250*Cload 0.5775+0.2920*Cload

en 46 ic 0.5781+0.2880*Cload
en 06/

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 233 of 253

 PRU24SDGZ

8.117 PRU24SDGZ

Tri-State Output Pad with Schmitt Trigger Input, Pull-Up, and Limited Slew Rate, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

C
TS
PAD
M
I
C
C
OEN
on 9
A
m

fid 7
Truth Table
bi

INPUT OUTPUT
en 46 ic
en 06/

OEN I PAD PAD C tia

9
t\

0 0 - 0 0 lI
Sc /2

0 1 - 1 1 nf
1 0/1 0 - 0
i en 19

1 0/1 1 - 1
or
25

1 0/1 Z - 1 m
tif

at
0

io
\,\

Cell Information
Value Unit
n
In

Cell Width 30.000 um

c\

Cell Height 190.000 um

.

Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6049 nW
VDDPST 3.0295 nW

Pin Capacitance
Value Unit
I 0.0600 pF
Continued. . .

TSMC Standard I/O TPZN40LPGV2OD3 Databook 234 of 253

 PRU24SDGZ

Value Unit
OEN 0.0751 pF
PAD 2.8474 pF

Propagation Delay
Group1 Group2 Group3
Timing Arc (< 10.0000)pf (10.0000-70.0000)pf (> 70.0000)pf

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

I PAD TP HL 2.9540+0.0282*Cload 3.0835+0.0205*Cload 3.3060+0.0163*Cload
I PAD TP LH
TS
3.4270+0.0244*Cload 3.5135+0.0195*Cload 3.7360+0.0153*Cload
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
OEN PAD TP HZ 9.7260+0.0012*Cload
C 9.7385+0.0003*Cload 9.7500
OEN PAD TP LZ 6.4450
C 6.4450 6.4450
OEN PAD TP ZH 2.3700+0.0468*Cload
on 9 2.6995+0.0255*Cload 3.0940+0.0179*Cload
A

OEN PAD TP ZL 1.5590+0.0516*Cload 1.9185+0.0295*Cload 2.4280+0.0197*Cload

m

Timing Arc
fid 7
(< 0.0300)pf (0.0300-0.3000)pf (> 0.3000)pf
bi

PAD C TP HL 1.1790+0.3000*Cload 1.1810+0.2400*Cload

en 46 ic 1.1845+0.2050*Cload
en 06/

PAD C TP LH 1.0075+0.3500*Cload 1.0080+0.3000*Cload 1.0090+0.2900*Cload

tia
9
t\

lI
Sc /2

nf
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 235 of 253

 PRUW08DGZ

8.118 PRUW08DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Up, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
C M PAD
C
I C
on 9
A

OEN
m

fid 7
bi

Truth Table en 46 ic
en 06/

INPUT OUTPUT tia

9

OEN I PAD REN PAD C

t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
i

1 0/1 0 0/1 - 0
en 19

or
25

1 0/1 1 0/1 - 1 m
tif

1 0/1 Z 0 - 1 at
1 0/1 Z 1 - X
0

io
\,\

n
In

Cell Information
c\

Value Unit
.

Cell Width 30.000 um

Cell Height 190.000 um
Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6081 nW
VDDPST 4.0605 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 236 of 253

 PRUW08DGZ

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.1582 pF
REN 0.0612 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 1.8930+0.0470*Cload
C 1.9690+0.0416*Cload 2.0390+0.0402*Cload
I PAD TP LH 1.9040+0.0424*Cload
C 2.0190+0.0348*Cload 2.1350+0.0325*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 3.3160+0.0002*Cload 3.3155+0.0001*Cload 3.3190

m

OEN PAD TP LZ
fid 7
2.9790+0.0002*Cload 2.9810 2.9810
bi

OEN PAD TP ZH 2.2310+0.0502*Cload 2.4445+0.0363*Cload

en 46 ic 2.6210+0.0328*Cload
OEN PAD TP ZL 1.5230+0.0558*Cload 1.7110+0.0430*Cload 1.8410+0.0404*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9400+0.3100*Cload 0.9430+0.2320*Cload

lI 0.9480+0.2000*Cload
Sc /2

PAD C TP LH 0.6026+0.3300*Cload 0.6037+0.2960*Cload

nf 0.6044+0.2885*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 237 of 253

 PRUW12DGZ

8.119 PRUW12DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Up, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
C M PAD
C
I C
on 9
A

OEN
m

fid 7
bi

Truth Table en 46 ic
en 06/

INPUT OUTPUT tia

9

OEN I PAD REN PAD C

t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
i

1 0/1 0 0/1 - 0
en 19

or
25

1 0/1 1 0/1 - 1 m
tif

1 0/1 Z 0 - 1 at
1 0/1 Z 1 - X
0

io
\,\

n
In

Cell Information
c\

Value Unit
.

Cell Width 30.000 um

Cell Height 190.000 um
Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6078 nW
VDDPST 4.0615 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 238 of 253

 PRUW12DGZ

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0627 pF
PAD 3.0807 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.2650+0.0400*Cload
C 2.4105+0.0305*Cload 2.5390+0.0280*Cload
I PAD TP LH 2.3590+0.0346*Cload
C 2.5090+0.0254*Cload 2.6870+0.0218*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 4.8250+0.0006*Cload 4.8305+0.0001*Cload 4.8350

m

OEN PAD TP LZ 4.0230

fid 7 4.0230 4.0230
bi

OEN PAD TP ZH 2.2670+0.0456*Cload 2.5230+0.0292*Cload

en 46 ic 2.7990+0.0238*Cload
OEN PAD TP ZL 1.5950+0.0580*Cload 1.9505+0.0345*Cload 2.2380+0.0288*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9398+0.3100*Cload 0.9427+0.2320*Cload

lI 0.9480+0.2000*Cload
Sc /2

PAD C TP LH 0.6022+0.3300*Cload 0.6036+0.2920*Cload

nf 0.6042+0.2880*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 239 of 253

 PRUW16DGZ

8.120 PRUW16DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Up, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
C M PAD
C
I C
on 9
A

OEN
m

fid 7
bi

Truth Table en 46 ic
en 06/

INPUT OUTPUT tia

9

OEN I PAD REN PAD C

t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
i

1 0/1 0 0/1 - 0
en 19

or
25

1 0/1 1 0/1 - 1 m
tif

1 0/1 Z 0 - 1 at
1 0/1 Z 1 - X
0

io
\,\

n
In

Cell Information
c\

Value Unit
.

Cell Width 30.000 um

Cell Height 190.000 um
Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6079 nW
VDDPST 4.0607 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 240 of 253

 PRUW16DGZ

Pin Capacitance
Value Unit
I 0.0597 pF
OEN 0.0629 pF
PAD 3.0030 pF
REN 0.0611 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.6750+0.0366*Cload
C 2.8385+0.0265*Cload 3.0370+0.0226*Cload
I PAD TP LH 2.8630+0.0296*Cload
C 2.9840+0.0226*Cload 3.2370+0.0178*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 6.7120+0.0012*Cload 6.7235+0.0001*Cload 6.7280

m

OEN PAD TP LZ 5.0690

fid 7 5.0690 5.0690
bi

OEN PAD TP ZH 2.3020+0.0442*Cload 2.5795+0.0265*Cload

en 46 ic 2.9150+0.0200*Cload
OEN PAD TP ZL 1.6100+0.0644*Cload 2.0830+0.0338*Cload 2.5600+0.0244*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9391+0.3100*Cload 0.9419+0.2320*Cload

lI 0.9470+0.2000*Cload
Sc /2

PAD C TP LH 0.6013+0.3300*Cload 0.6025+0.2940*Cload

nf 0.6035+0.2875*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 241 of 253

 PRUW24DGZ

8.121 PRUW24DGZ

Tri-State Output Pad with Input, Limited Slew Rate and Enable Controlled Pull-Up, High-Volt
Tolerant

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

REN TS
C M PAD
C
I C
on 9
A

OEN
m

fid 7
bi

Truth Table en 46 ic
en 06/

INPUT OUTPUT tia

9

OEN I PAD REN PAD C

t\

0 0 - 0/1 0 0 lI
Sc /2

0 1 - 0/1 1 1 nf
i

1 0/1 0 0/1 - 0
en 19

or
25

1 0/1 1 0/1 - 1 m
tif

1 0/1 Z 0 - 1 at
1 0/1 Z 1 - X
0

io
\,\

n
In

Cell Information
c\

Value Unit
.

Cell Width 30.000 um

Cell Height 190.000 um
Pad Number 1 -

Leakage Power
Value Unit
VDD 3.6079 nW
VDDPST 4.0596 nW

TSMC Standard I/O TPZN40LPGV2OD3 Databook 242 of 253

 PRUW24DGZ

Pin Capacitance
Value Unit
I 0.0600 pF
OEN 0.0629 pF
PAD 2.8474 pF
REN 0.0612 pF

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Propagation Delay
TS
Group1 Group2 Group3
Timing Arc (< 10.0000)pf
M (10.0000-70.0000)pf (> 70.0000)pf
I PAD TP HL 2.9540+0.0282*Cload
C 3.0800+0.0206*Cload 3.3060+0.0163*Cload
I PAD TP LH 3.4280+0.0246*Cload
C 3.5155+0.0195*Cload 3.7390+0.0153*Cload
Timing Arc (< 10.0000)pf
on 9 (10.0000-70.0000)pf (> 70.0000)pf
A

OEN PAD TP HZ 9.4110+0.0020*Cload 9.4295+0.0001*Cload 9.4270+0.0001*Cload

m

OEN PAD TP LZ 6.4470

fid 7 6.4470 6.4480
bi

OEN PAD TP ZH 2.4180+0.0450*Cload 2.7255+0.0253*Cload

en 46 ic 3.1080+0.0179*Cload
OEN PAD TP ZL 1.5600+0.0518*Cload 1.9205+0.0295*Cload 2.4300+0.0197*Cload
en 06/

Timing Arc (< 0.0300)pf

tia
(0.0300-0.3000)pf (> 0.3000)pf
9
t\

PAD C TP HL 0.9409+0.3100*Cload 0.9438+0.2320*Cload

lI 0.9490+0.2000*Cload
Sc /2

PAD C TP LH 0.6027+0.3300*Cload 0.6038+0.2960*Cload

nf 0.6050+0.2875*Cload
i en 19

or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 243 of 253

 PVDD1ANA

8.122 PVDD1ANA

Dedicated Power Supply to Internal Macro with Core Voltage

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Cell Information
TS
Value Unit
M
Cell Width 30.000 umC
Cell Height 190.000 um
Pad Number 1 -
C
on 9
A
m

Leakage Power
fid 7
bi

Value Unit en 46 ic
en 06/

AVDD 62.7134 nW tia

9
t\

lI
Sc /2

Pin Capacitance nf
Value Unit
i en 19

AVDD 3.5863 pF
or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 244 of 253

 PVDD1DGZ

8.123 PVDD1DGZ

Vdd Pad for Core Power Supply

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Cell Information
M
Value
C
Unit
Cell Width 30.000 um
C
Cell Height 190.000 um
on 9
A

Pad Number 1 -
m

fid 7
bi

en 46 ic
en 06/

Leakage Power tia

9

Value Unit
t\

VDD 62.7134 nW lI
Sc /2

nf
i en 19

Pin Capacitance
or
25

Value Unit
m
tif

VDD 3.6398 pF at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 245 of 253

 PVDD2ANA

8.124 PVDD2ANA

Dedicated Power Supply to Internal Macro with I/O Voltage

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Cell Information
TS
Value Unit
M
Cell Width 30.000 umC
Cell Height 190.000 um
Pad Number 1 -
C
on 9
A
m

Leakage Power
fid 7
bi

Value Unit en 46 ic
en 06/

AVDD 0.0870 nW tia

9
t\

lI
Sc /2

Pin Capacitance nf
Value Unit
i en 19

or
25

AVDD 3.8026 pF
m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 246 of 253

 PVDD2DGZ

8.125 PVDD2DGZ

Power Pad for I/O Power Supply

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Cell Information
M
Value
C
Unit
Cell Width 30.000 um
C
Cell Height 190.000 um
on 9
A

Pad Number 1 -
m

fid 7
bi

en 46 ic
en 06/

Leakage Power tia

9

Value Unit
t\

VDDPST 3.0911 nW
lI
Sc /2

nf
i en 19

Pin Capacitance
or
25

Value Unit
m
tif

VDDPST 2.0116 pF
at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 247 of 253

 PVDD2POC

8.126 PVDD2POC

Power-on Control Power Pad for I/O Power Supply

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
Cell Information
M
Value
C
Unit
Cell Width 30.000 um
C
Cell Height 190.000 um
on 9
A

Pad Number 1 -
m

fid 7
bi

en 46 ic
en 06/

Leakage Power tia

9

Value Unit
t\

VDDPST 10956.4000 nW
lI
Sc /2

nf
i en 19

Pin Capacitance
or
25

Value Unit
m
tif

VDDPST 1.9918 pF
at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 248 of 253

 PVSS1ANA

8.127 PVSS1ANA

Dedicated Ground Supply for PVDD1ANA

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Cell Information
TS
Value Unit
M
Cell Width 30.000 um
C
Cell Height 190.000 um
Pad Number 1 -
C
on 9
A
m

Leakage Power
fid 7
bi

Value Unit en 46 ic
en 06/

VDDPST 0.1089 nW tia

9
t\

lI
Sc /2

Pin Capacitance nf
Value Unit
i en 19

AVSS 1.5293 pF
or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 249 of 253

 PVSS1DGZ

8.128 PVSS1DGZ

Vss Pad for Core Ground Supply

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
Cell Information C
Value Unit
Cell Width 30.000 um
C
Cell Height 190.000 um
on 9
A
m

Pad Number 1 - fid 7

bi

en 46 ic
en 06/

Leakage Power tia

9

Value Unit
t\

VDD 0.0061 nW
lI
Sc /2

VDDPST 0.1089 nW
nf
i en 19

or
25

m
tif

Pin Capacitance
Value Unit
at
0

VSS 1.8394 pF
io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 250 of 253

 PVSS2ANA

8.129 PVSS2ANA

Dedicated Ground Supply for PVDD2ANA

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

Cell Information
TS
Value Unit
M
Cell Width 30.000 um
C
Cell Height 190.000 um
Pad Number 1 -
C
on 9
A
m

Leakage Power
fid 7
bi

Value Unit en 46 ic
en 06/

VDDPST 0.1089 nW tia

9
t\

lI
Sc /2

Pin Capacitance nf
Value Unit
i en 19

AVSS 1.5267 pF
or
25

m
tif

at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 251 of 253

 PVSS2DGZ

8.130 PVSS2DGZ

Ground Pad for I/O Ground Supply

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
Cell Information C
Value Unit
C
Cell Width 30.000 um on 9
Cell Height 190.000 um
A
m

Pad Number 1 - fid 7

bi

en 46 ic
en 06/

Leakage Power tia

9

Value Unit
t\

VDDPST 0.1089 nW
lI
Sc /2

nf
i en 19

or
25

Pin Capacitance
m
tif

Value Unit
VSSPST 0.5079 pF
at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 252 of 253

 PVSS3DGZ

8.131 PVSS3DGZ

Ground Pad for I/O and Core Ground Supply

VSS

TSMC Confidential Information 997446 Ambient\ Scientific\,\ Inc\. 06/25/2019

TS
M
Cell Information C
Value UnitC
Cell Width 30.000 um on 9
Cell Height 190.000 um
A
m

Pad Number 1 - fid 7

bi

en 46 ic
en 06/

Leakage Power tia

9

Value Unit
t\

VDDPST 0.1089 nW
lI
Sc /2

nf
i en 19

or
25

Pin Capacitance
m
tif

Value Unit
VSS 0.7843 pF
at
0

io
\,\

n
In
c\
.

TSMC Standard I/O TPZN40LPGV2OD3 Databook 253 of 253