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? Understanding The Antenna Effect in VLSI Design?-1

The antenna effect in VLSI is a phenomenon where unconnected metal interconnects accumulate excessive charge during plasma processes, potentially damaging the gate oxide of transistors and leading to device failure. Key factors include large metal areas, lack of discharge paths, and plasma-based processes. Prevention methods such as antenna diodes, metal layer switching, and jogging techniques are essential to mitigate this effect and ensure reliable VLSI circuit performance.

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107 views4 pages

? Understanding The Antenna Effect in VLSI Design?-1

The antenna effect in VLSI is a phenomenon where unconnected metal interconnects accumulate excessive charge during plasma processes, potentially damaging the gate oxide of transistors and leading to device failure. Key factors include large metal areas, lack of discharge paths, and plasma-based processes. Prevention methods such as antenna diodes, metal layer switching, and jogging techniques are essential to mitigate this effect and ensure reliable VLSI circuit performance.

Uploaded by

rakshithashiremath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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***ANTENNA EFFECT IN VLSI***

What’s the antenna effect?


The antenna effect in VLSI is a manufacturing-induced phenomenon where
long, unconnected metal interconnects accumulate excessive charge during
plasma-based processes like etching or deposition. This charge can discharge
through the connected transistor’s gate, potentially causing gate oxide damage
due to oxide breakdown, leading to device failure. The severity of this effect is
typically measured by the antenna ratio, which compares the area of the metal
collecting charge to the area of the sensitive gate oxide.
Why does it happen?
o In modern chip fabrication, plasma etching is used to shape metal
interconnects. This process removes unwanted material by bombarding
the surface with charged particles (ions and electrons).
o If a long metal wire is present but not yet connected to a diffusion or power
source, it acts like an antenna, collecting excess charge from the plasma.
o The gate of a MOS transistor is made of a very thin gate oxide layer,
which is highly sensitive to high voltages.
o If too much charge builds up on the metal wire, it can suddenly discharge
through the gate, causing gate oxide breakdown and permanently
damaging the transistor.
Key Factors Contributing to the Antenna Effect:
1. Large Metal Area – More metal means more charge accumulation.
2. No Discharge Path – If the metal is only connected to the gate (not
diffusion), the charge cannot escape.
3. Plasma-Based Processes – Ionized particles in plasma contribute to
charge buildup.
Impact:
🔹 Gate oxide damage
🔹 Device degradation or failure
🔹 Yield reduction

How do we prevent it?


 Antenna Diodes:
o Reverse biased diodes connected to the gate provide a safe
discharge path for excess charge.
o When charge accumulates, the diode clamps the voltage and
protects the gate oxide from breakdown.

M2

M1

GATE
I/p driver

 Metal Jumping (Layer Switching):


o Split long interconnects across different metal layers using vias.
o This reduces the charge collected on any single layer, minimizing
the risk of high antenna ratios.
M2

M1

GATE

I/p driver

 Jogging Techniques:
o Introduce small jogs or bends in the metal line to reduce
continuous metal area, lowering charge accumulation.

M2 M2

M1 M1 M1

I/p driver jumper GATE

Conclusion :
The antenna effect in VLSI is a critical manufacturing issue where long metal
interconnects accumulate excess charge during plasma processes, leading to
potential gate oxide damage in MOS transistors. This can result in permanent
device failure if not addressed.
To prevent this, techniques like antenna diode insertion, metal layer
switching, and jogging techniques are employed. Among these, antenna
diodes provide an effective and immediate discharge path for the accumulated
charge, protecting the delicate gate oxide layer.
By following proper design rules and layout strategies, the risk of the antenna
effect can be minimized, ensuring reliable and robust VLSI circuits.

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