MM40G3T120B

1200V 40A IGBT

May 2018 Version 01 RoHS Compliant

PRODUCT FEATURES
□ IGBT chip in trench FS-technology

□ Low switching losses

□ VCE(sat) with positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

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2
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APPLICATIONS
□ High frequency switching application
1.Gate
□ Medical applications 2.Collector
□ Motion/servo control 3.Emitter

□ UPS systems

Type VCES IC VCE(sat) TJ=25°C TJmax Marking Package

MM40G3T120B 1200V 40A 1 9V
1.9V 175°C MM40G3T120B TO-247
TO 247

ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)

Symbol Parameter/Test Conditions Values Unit
VCES Collector Emitter Voltage TJ=25℃ 1200
V
VGES Gate Emitter Voltage ±20
TC=25℃ 70
IC DC Collector Current
TC=110℃ 40 A
ICpuls Pulsed collector current,tp limited by TJmax 140
Ptot Power Dissipation Per IGBT 395 W
VRRM Repetitive Reverse Voltage TJ=25℃ 1200 V
IF(AV) Average Forward Current TC=95℃ 40
A
IFpuls Diode pulsed current,tp limited by TJmax 80
TJmax Max. Junction Temperature 175
TJop Operating Temperature -40~175 ℃
Tstg Storage Temperature -55~150
Torque to heatsink Recommended（M3） 1.1 Nm
Weight 8 g

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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 MM40G3T120B
IGBT
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol Parameter/Test Conditions Min. Typ. Max. Unit
VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1mA 5.0 5.8 6.5
IC=40A, VGE=15V, TJ=25℃ 1.9 2.35
Collector Emitter V
VCE(sat) IC=40A, VGE=15V, TJ=125℃ 2.25
Saturation Voltage
IC=40A, VGE=15V, TJ=150℃ 2.35
VCE=1200V, VGE=0V, TJ=25℃ 100 µA
ICES Collector Leakage Current
VCE=1200V, VGE=0V, TJ=150℃ 10 mA
IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 400 nA
Qg Gate Charge VCE=600V, IC=40A , VGE=15V 210 nC
Cies Input Capacitance 2.8 nF
VCE=25V, VGE=0V, f =1MHz
Cres Reverse Transfer Capacitance 110 pF
TJ=25℃ 30 ns
td(on) Turn on Delay Time TJ=125℃ 35 ns
VCC=600V,IC=40A
RG =20Ω, TJ=150℃ 40 ns
VGE=±15V, TJ=25℃ 40 ns
Inductive Load
tr Rise Time TJ=125℃ 45 ns
TJ=150℃ 45 ns
TJ=25℃ 250 ns
td(off) Turn off Delay Time TJ=125℃ 290 ns
VCC=600V,IC=40A
RG =20Ω, TJ=150℃ 310 ns
VGE=±15V, TJ=25℃ 100 ns
Inductive Load
tf Fall Time TJ=125℃ 150 ns
TJ=150℃ 180 ns
TJ=125℃ 4.9 mJ
Eon Turn on Energy VCC=600V,IC=40A
RG =20Ω, TJ=150℃ 5.4 mJ
VGE=±15V, TJ=125℃ 4.2 mJ
Eoff Turn off Energy Inductive Load
TJ=150℃ 4.7 mJ
tpsc≤10µS , VGE=15V
ISC Short Circuit Current 150 A
TJ=125℃,VCC=600V
RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.35 K /W

Anti-Parallel Diode
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol Parameter/Test Conditions Min. Typ. Max. Unit
IF=40A , VGE=0V, TJ =25℃ 2.05 2.55
VF Forward Voltage IF=40A , VGE=0V, TJ =125℃ 1.85 V
IF=40A , VGE=0V, TJ =150℃ 1.75
trr Reverse Recovery Time 350 ns
IF=40A , VR=600V
IRRM Max. Reverse Recovery Current 39.5 A
dIF/dt=-850A/μs
QRR Reverse Recovery Charge 5 µC
TJ =150℃
Erec Reverse Recovery Energy 1.85 mJ
RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.7 K /W

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 MM40G3T120B
80 80
Vge=17V
25℃
Vge=15V
150℃
60 60 Vge=13V
Vge=11V
Vge=9V
IC(A)

IC(A)
40 40

TJ=150℃
20 20
VGE=15V

0 0
0 1 2 3 4 0 1 2 3 4 5

VCE（V） VCE（V）
Figure 1. Typical Output Characteristics IGBT Figure 2. Typical Output Characteristics IGBT

80 20

VCE=20V VCE=600V
IC=40A
16 VGE=±15V
60
TJ=150℃
EonEoff(mJ)

12
IC(A)

40 Eon
8 Eoff

20
4
25℃
150℃
0 0
6 7 8 9 10 11 12 0 20 40 60 80 100

VGE（V） Rg）Ω（
Figure 3. Typical Transfer characteristics IGBT Figure 4. Switching Energy vs Gate Resistor IGBT

20 90
VCE=600V
Rg=20Ω 75
16 VGE=±15V
TJ=150℃ Rg=20Ω
60 VGE=±15V
EonEoff(mJ)

12 TJ=150℃
IC(A)

45
8
30

4 Eon 15
Eoff
0 0
0 20 40 60 80 0 200 400 600 800 1000 1200 1400

IC）A（ VCE）V（
Figure 5. Switching Energy vs Collector Current IGBT Figure 6. Reverse Biased Safe Operating Area IGBT

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 MM40G3T120B
80 50

40
60
DC
30
DC
IC(A)

IF(A)
40
20

20
10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC(℃) TC(℃)
Figure 7. Collector Current vs Case temperature Figure 8. Forward current vs Case temperature
IGBT Diode
80 3
VCE=600V
25℃
IF=20A
150℃ TJ=150℃
60
2
EREC(mJ)
IF(A)

40

1
20

0 0
0 1 2 3 0 20 40 60 80 100

VF(V) Rg）Ω（
Figure 9. Diode Forward Characteristics Diode Figure 10. Switching Energy vs Gate Resistor Diode

3 10
VCE=600V
Rg=20Ω
TJ=150℃
1
2
ZthJc(K/W)
EREC(mJ)

0.1

IGBT
1
DIODE
0.01

0 0.001
0 20 40 60 80 0.00001 0.0001 0.001 0.01 0.1 1

IF(A) Rectangular Pulse Duration(S)

Figure 11. Switching Energy vs Forward Current Diode Figure 12. Transient Thermal Impedance of
Diode and IGBT

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 MM40G3T120B

Dimensions in (mm)
Figure 13. Package Outline