Application Note

Applying IGBT and Diode dies

 Applying IGBT and Diode dies

Application Note 5SYA 2059-01

Ulrich Schlapbach, Björn Backlund,

Andreas Baschnagel, Roland Fischer, Silvan Geissmann

ABB Switzerland Ltd

Semiconductors

November 2008

Table of Contents

1 INTRODUCTION..................................................................................................................................................... 3
1.1 BACKGROUND ..................................................................................................................................................... 3
1.2 PRODUCT LINE-UP ................................................................................................................................................ 3
1.3 PART NUMBERING SYSTEM .................................................................................................................................. 3
1.4 ELECTRO-STATIC DISCHARGE SENSITIVITY ........................................................................................................... 4
2 DATA SHEET USERS GUIDE ............................................................................................................................... 4
2.1 KEY PARAMETERS AND FEATURES ....................................................................................................................... 5
2.2 MAXIMUM RATED VALUES IGBT......................................................................................................................... 5
2.3 MAXIMUM RATED VALUES DIODE........................................................................................................................ 6
2.4 IGBT CHARACTERISTIC VALUES .......................................................................................................................... 7
2.5 DIODE CHARACTERISTIC VALUES ....................................................................................................................... 12
2.6 MECHANICAL PROPERTIES ................................................................................................................................. 14
2.7 OUTLINE DRAWING ............................................................................................................................................ 15
2.8 DIAGRAMS IGBT............................................................................................................................................... 16
2.9 DIAGRAMS DIODE .............................................................................................................................................. 19
3 TESTING, SHIPMENT, STORAGE AND HANDLING OF IGBT AND DIODE DIES................................. 21

4 ASSEMBLY RECOMMENDATIONS................................................................................................................. 21
4.1 DIE ATTACHMENT ............................................................................................................................................. 21
4.2 WIRE BONDING .................................................................................................................................................. 21
4.3 SURFACE COVERAGE.......................................................................................................................................... 21
5 ADDITIONAL NOTES .......................................................................................................................................... 22
5.1 REFERENCES ...................................................................................................................................................... 22
5.2 APPLICATION SUPPORT....................................................................................................................................... 22

Page 2 of 22 Doc. No. 5SYA2059-01 Nov. 08

1 Introduction

1.1 Background

ABB has a well established reputation in the field of high-power electronics. This is reflected in a
comprehensive product portfolio covering a wide range of devices such as thyristors, diodes, GTOs, IGBTs
and IGCTs with voltages of up to 8.5 kV for demanding Industrial, Traction and Energy Management
markets. All our dies are developed and produced at our own facilities in Switzerland with the goal of making
IGBTs Best-in-Class in terms of switching performance, ruggedness and reliability. These chips are available
to module, press-pack and hybrid manufacturers interested in making world-class power products of their
own.

ABB currently produces IGBTs (Insulated Gate Bipolar Transistors) and Diodes in a voltage range of 1200 to
6500 V based on the now well established SPT technology (Soft Punch-Through). SPT technology is
characterised by well controlled (“soft”) switching performances and very large Safe Operating Areas (SOA),
together with positive temperature coefficients for reliable parallel operation. A new generation of chips,
+ +
known as SPT , is currently being introduced. SPT retains all the features of SPT but allows a 20 – 30%
reduction in VCE sat, depending on voltage class.

This application note does not cover any detailed semiconductor physics. For a systematic introduction to the
operation principle and physics of power semiconductor devices, including IGBT and diode, we recommend
the book “Power Semiconductors” from Stefan Linder, ISBN 0-8247-2569-7 (CRC Press, published in 2006).

1.2 Product line-up

For the current line-up of IGBT- and diode-dies please consult the ABB Switzerland Ltd, Semiconductors
internet web site:
http://www.abb.com/semiconductors

1.3 Part numbering system

All chip data sheets use Type 12 since they refer to single die.

Page 3 of 22 Doc. No. 5SYA2059-01 Nov. 08

 Figure 1: From left to right: un-sawn wafer (type 76), sawn wafer die on frame (type 86),
picked dies in waffle-packs (type 12)

Note that dies rated above 1700 V can only be supplied in waffle packs.

1.4 Electro-static discharge sensitivity

The IGBT is an electrostatic sensitive device and must be handled properly to avoid damage from electro
static discharge (ESD). Therefore please observe the international standard IEC 60747-1 chapter IX.

2 Data sheet users guide

This section is a detailed guide to the proper understanding of a die data sheet. Parameters and ratings will
be defined and illustrated with figures, where appropriate. For explanation purposes, data and diagrams
associated with IGBT type 5SMY 12K1201 and diode 5SLX 12M1711 have been used but because the other
IGBTs and other diode dies have similar data sheets, this guide is applicable to all IGBT and diode dies.

The data sheets distinguish between maximum rated values and characteristic values. Maximum values
indicate limits beyond which damage may occur to the device. Characteristic values are parameters defined
under typical application conditions.

ABB reserves the right to change data sheets without notice. Therefore, please visit our internet web site at
www.abb.com/semiconductors, for the latest version.

Page 4 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.1 Key parameters and features

VCE = 1200 V
IC = 100 A IGBT-Die
5SMY 12K1201

Die size: 11.9 x 11.2 mm

Doc. No. 5SYA1635-01 Sep 06

• Ultra low loss thin IGBT die

• Highly rugged SPT+ design
• Large bondable emitter area

The key features give the type, the basic voltage and current rating and the size of the die. They are followed
by a short description of the technologies used and the main features of these technologies.

2.2 Maximum rated values IGBT

Maximum rated values 1)

Parameter Symbol Conditions min max Unit

Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200 V
DC collector current IC 100 A
Peak collector current ICM Limited by Tvjmax 200 A
Gate-emitter voltage VGES -20 20 V
VCC = 900 V, VCEM ≤ 1200 V
IGBT short circuit SOA tpsc 10 µs
VGE ≤ 15 V, Tvj ≤ 125 °C
Junction temperature Tvj -40 150 °C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

VCES: Collector-emitter voltage. The maximum collector-emitter voltage that may not be exceeded under any
conditions. Applying voltages to the die in excess of this limit, even of short duration, can lead to device
failure.

The collector-emitter blocking voltage has a temperature dependency. All ABB devices have been designed
to have full blocking voltage within the specified temperature range.

Applying high DC voltages to a semiconductor will increase the failure rates due to cosmic radiation. For this
reason, the operating DC voltage is much lower than the peak repetitive voltage VCES defined above. This is
explained and specified on module level in Application Note 5SYA2042. For design voltage recommendations
see document 5SYA2051.

IC: DC collector current. The nominal DC current.

Page 5 of 22 Doc. No. 5SYA2059-01 Nov. 08

ICM: Peak collector current. The maximum peak current that the IGBT can switch within specified limits.
Exceeding this limit may lead to turn-off failures and (depending on pulse duration) also to over-heating of the
device.

VGES: Gate-emitter voltage. The absolute maximum allowable voltage between gate and emitter under any
conditions. Exceeding the specified limits may lead to degradation of the gate oxide, ultimately leading to
device failure.

tpsc: IGBT Short Circuit SOA. The maximum duration of a short-circuit current pulse through the IGBT at the
specified conditions. Exceeding this duration will over-heat the device and cause a failure. tpsc determines the
limit for the time allowed for possible fault detection and turn-off via the gate unit.

Tvj: Junction temperature. The IGBT chips are capable of operating at temperatures up to the specified limit.

2.3 Maximum rated values Diode

Maximum rated values 1)

Parameter Symbol Conditions min max Unit

Repetitive peak reverse voltage VRRM 1700 V
Continuous forward current IF 200 A
Repetitive peak forward current IFRM Limited by Tvjmax 400 A
Junction temperature Tvj -40 125 °C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2

VRRM: Repetitive peak reverse voltage. Maximum voltage that the device can block repetitively.

The anode-cathode reverse voltage has a temperature dependency. All ABB devices have been designed to
have full blocking voltage within the specified temperature range.

Applying high DC voltages to a semiconductor will increase the failure rates due to cosmic radiation. For this
reason, the operating DC voltage is much lower than the peak repetitive voltage VRRM defined above. This is
explained and specified on module level in Application Note 5SYA2042. For design voltage recommendations
see Application Note 5SYA2051.

IF: Continuous forward current. The nominal DC current.

IFRM: Repetitive peak forward current. The maximum peak current that the diode can conduct within the
specified limits. Exceeding this limit may lead to turn-off failures and (depending on pulse duration) over-
heating of the device.

Tvj: Junction temperature. The diode chips are capable of operating at temperatures up to the specified limit.

Page 6 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.4 IGBT characteristic values

The characteristic values are divided into static and dynamic values.

IGBT characteristic values 2)

Parameter Symbol Conditions min typ max Unit

Collector (-emitter)
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C 1200 V
breakdown voltage
Collector-emitter Tvj = 25 °C 1.8 V
VCE sat IC = 100 A, VGE = 15 V
saturation voltage Tvj = 125 °C 2.0 V
Tvj = 25 °C 100 µA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V
Tvj = 125 °C 400 µA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -200 200 nA
Gate-emitter threshold voltage VGE(TO) IC = 4 mA, VCE = VGE, Tvj = 25 °C 5 6.2 7 V
Gate charge Qge IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 1050 nC
Input capacitance Cies 7.43
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Output capacitance Coes 0.52 nF
Tvj = 25 °C
Reverse transfer capacitance Cres 0.34
Internal gate resistance RGint 2 Ω

V(BR)CES: Collector (-emitter) breakdown voltage. The minimum voltage that the device will block in the
forward direction at the specified conditions.

VCEsat: Collector-emitter saturation voltage. The collector-emitter voltage at the specified conditions. This
value can depend on the pattern of the bonding wires.

ICES: Collector cut-off current. The collector current at the specified collector-emitter voltage with the gate
short-circuited to the emitter.

IGES: Gate leakage current. The gate leakage current at the specified gate-emitter voltage with the collector
short-circuited to the emitter.

VGE(TO): Gate-Emitter threshold voltage. The gate-emitter voltage at which the collector current attains the
specified value.

Qge: Gate charge. The charge required to raise the gate voltage from the specified minimum to the specified
maximum value at the specified conditions.

Cies: Input capacitance. The capacitance between the gate and the emitter at given conditions.

Coes: Output capacitance. The capacitance between the collector and the emitter at given conditions.

Cres: Reverse transfer capacitance. The capacitance between the collector and the gate at given conditions.

RGint: Internal gate resistor. The value of the built-in resistor in the gate.

Page 7 of 22 Doc. No. 5SYA2059-01 Nov. 08

 VCC = 600 V, IC = 100 A, Tvj = 25 °C 125
Turn-on delay time td(on) ns
RG = 10 Ω, VGE = ±15 V, Tvj = 125 °C 135
Lσ = 60 nH, Tvj = 25 °C 60
Rise time tr inductive load ns
Tvj = 125 °C 60
VCC = 600 V, IC = 100 A, Tvj = 25 °C 420
Turn-off delay time td(off) ns
RG = 10 Ω, VGE = ±15 V, Tvj = 125 °C 490
Lσ = 60 nH, Tvj = 25 °C 60
Fall time tf inductive load ns
Tvj = 125 °C 75
VCC = 600 V, IC = 100 A,
VGE = ±15 V, RG = 10 Ω, Tvj = 25 °C 8.6
Turn-on switching energy Eon Lσ = 60 nH, mJ
inductive load, Tvj = 125 °C 12.4
FWD: 5SLX 12H1200
VCC = 600 V, IC = 100 A,
Tvj = 25 °C 6.8
VGE = ±15 V, RG = 10 Ω,
Turn-off switching energy Eoff mJ
Lσ = 60 nH,
Tvj = 125 °C 10.8
inductive load
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
Short circuit current ISC 470 A
VCC = 900 V, VCEM ≤ 1200 V
2)
Characteristic values according to IEC 60747 - 9

All switching parameters are defined in a phase-leg connection using an auxiliary component (AUX) of the
same family/rating as the device under test (DUT), see Figure 2. For the definitions of the different switching
parameters, see Figure 3 and Figure 4. All switching parameters in ABB data sheets are specified for an
inductive load.

Lσ

AUX

Lload
+

DUT
Gate
Drive E

Figure 2: Electrical circuit for testing of the dynamic performance of the IGBT

Page 8 of 22 Doc. No. 5SYA2059-01 Nov. 08

 ICM
VCC
VGE
VGEon

Crossing point from rising

IC and the extrapolated
dc-current
IC
IC
90% IC
10% VGEon
VGEoff

10% IC VCE

t1 t2
td(on) tr
t2 = t1 + 5..10 µs (voltage class dependent)

Figure 3: Definitions of the turn-on parameters for the IGBT

VCEM
VCE
VCC
IC
VGEon 90% IC
90% VGEon

60% IC

VGE
VGEoff

10% IC IC

t3 t4
td(off) tf t4 = t3 + 5..10 µs (voltage class dependent)

Figure 4: Definitions of turn-off parameters for IGBTs

Page 9 of 22 Doc. No. 5SYA2059-01 Nov. 08

td(on): Turn-on delay time. The turn-on delay time is defined as the time between the instant when the gate
voltage has reached 10 % of its final value and the instant when the collector current has reached 10 % of its
final value.

tr: Rise time. The rise time is defined as the time between instants when the collector current has risen from
10 % to 90 % of its final value.

The total turn-on time ton is the sum of td(on) and tr.

td(off): Turn-off delay time. The turn-off delay time is defined as the time between the instant when the gate
voltage has dropped to 90 % of its initial value and the instant when the collector current has dropped to 90 %
of its initial value.

tf: Fall time. The fall time is defined as the time between instants when the collector current has dropped from
90 % to 10 % of its initial value along an extrapolated straight line drawn between the instants when the
current has reached 90 % and 60 % of its initial value.

The total turn-off time toff is the sum of td(off) and tf.

Eon: Turn-on switching energy. The energy dissipated during a single turn-on event. It is the integration of the
product of collector current and collector-emitter voltage from t1 to t2 (see Figure 3) as expressed by Equation
1. Note that the value depends on the used free-wheel diode having the same temperature as the IGBT. The
use of other diodes may lead to other values.

t2

Eon = ∫ (iC (t ) ⋅ vCE (t ))dt

t1
Equation 1

Eoff: Turn-off switching energy. The energy dissipated during a single turn-off event. It is the integration of the
product of the collector current and the collector-emitter voltage from t3 to t4 (see Figure 4) as expressed by
Equation 2.

t4

Eoff = ∫ (iC (t ) ⋅ vCE (t ))dt

t3
Equation 2

ISC: Short circuit current. The self-limited current reached in de-saturation when the device is turned on into a
short circuit at the specified conditions. Typical waveforms during such an event are shown in Figure 6. The
value shown in the data sheet is the average current during the middle 25 % of the current pulse.

Page 10 of 22 Doc. No. 5SYA2059-01 Nov. 08

 Lσ

AUX

Lsc ≈ 5..10nH
+

DUT
Gate
Drive E

Figure 5: Electrical circuit for testing of the Short-Circuit performance of the IGBT

VCC

VGE

IC

Measurement interval for ISC

Figure 6: Typical waveforms for Short-Circuit

Page 11 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.5 Diode characteristic values

Diode characteristic values 2)

Parameter Symbol Conditions min typ max Unit

Tvj = 25 °C 1.4 1.65 2.0 V
Continuous forward voltage VF IF = 200 A
Tvj = 125 °C 1.7 V
Tvj = 25 °C 100 µA
Continuous reverse current IR VR = 1700 V
Tvj = 125 °C 4 mA
Tvj = 25 °C 150 A
Peak reverse recovery current Irr
Tvj = 125 °C 192 A
IF = 200 A,
VR = 900 V, Tvj = 25 °C 59 µC
Recovered charge Qrr di/dt = 1000 A/µs, Tvj = 125 °C 98 µC
Lσ = 800 nH,
Inductive load, Tvj = 25 °C 520 ns
Reverse recovery time trr
Switch: Tvj = 125 °C 700 ns
2x 5SMX12M1701
Tvj = 25 °C 46 mJ
Reverse recovery energy Erec
Tvj = 125 °C 75 mJ
2)
Characteristic values according to IEC 60747 - 2

All switching parameters are defined in a phase leg connection using the specified IGBT-dies as auxiliary
components (AUX) having the same temperature as the Diode, see Figure 7. For the definitions of the
different switching parameters see Figure 8. All switching parameters in the ABB data sheet are specified for
inductive load.

.
Lσ

AUX
Gate
Drive
Lload
+

DUT

Figure 7: Test circuit for the dynamic performance of the Diode

Page 12 of 22 Doc. No. 5SYA2059-01 Nov. 08

 di/dt
IF VR

trr

t0 Qrr t1
25% Irr
ZCP

Irr 90% Irr

t1 = t0 + 5..10 µs (voltage class dependent)

Figure 8: Definitions for the turn-off parameters for the diode

VF: Forward voltage. The anode-cathode on-state voltage of the diode at the specified conditions. This value
depends on the pattern of the bonding wires.

IR: Reverse current. The leakage current at the specified conditions.

Irr: Reverse recovery current. The peak value of the reverse current during commutation at the specified
conditions.

Qrr: Reverse recovery charge. The integral over time of the reverse current during commutation at the
specified conditions starting at the zero-crossing of the current and ending when the reverse current has
decayed to zero after the tail-current phase.

trr: Reverse recovery time. The commutation time of the diode at the specified conditions. It is measured
between the current zero-crossing and the zero-crossing of the extrapolation between 90 and 25% of the
reverse current peak Irr (on the falling flank).

Erec: Reverse recovery energy. The energy dissipated during a single reverse recovery event. It is the
integration of the product of the reverse current and voltage from t0 to t1 (see Figure 8) as expressed by
Equation 3.

t1

Erec = ∫ (iR (t ) ⋅ vR (t ))dt

t0
Equation 3

di/dt: The current rate-of-change of the falling flank is calculated as the slope of the linear fit
over 100ns around the zero crossing point (ZCP) on the falling flank.

Page 13 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.6 Mechanical properties

Mechanical properties
Parameter Unit
Overall die LxW 11.9 x 11.2 mm
exposed front L x W (except gate pad) 10.4 x 9.7 mm
Dimensions metal
gate pad LxW 1.2 x 1.22 mm
thickness 130 ± 20 µm
front (E) AlSi1 4 µm
Metallization 3)

back (C) Al / Ti / Ni / Ag 1.2 µm

3)
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.

Overall dimension L x W: The overall dimension of the die. Tolerances are found in the outline drawing.

Exposed front metal L x W: The size of the front (emitter for IGBT and anode for diode) metallization
available for bonding.

Gate pad L x W: The size of the gate pad metallization on the IGBT-die available for bonding. Tolerances
are found in the outline drawing.

Thickness: The thickness of the die.

Front metallization: Composition and thickness of the front (emitter for IGBT and anode for diode)
metallization.

Back metallization: Composition and thickness of the back (collector for IGBT and cathode for diode)
metallization.

Page 14 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.7 Outline drawing

Outline drawing

1.31
1.20 ±0.05

1.22 ±0.05
11.19 ±0.05
10.06
9.67

1.32
Emitter

10.37
10.77
11.89 ±0.05

Note: all dimensions are shown in mm

The outline drawing shows the dimensions of the die with tolerances. All dimensions for the ABB-products
are in mm.

Page 15 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.8 Diagrams IGBT

In addition to the table data a number of diagrams are included showing the most important dependencies of
the main parameters.

The on-state voltage for the IGBT is given as a

300
function of the collector current at VGE = 15 V
for junction temperatures 25 °C and 125 °C,
respectively. The characteristics are typical.
250

25 °C

200 125 °C
IC [A]

150

100

50

VGE = 15 V
0
0 1 2 3 4 5
VCE [V]

Figure 9: Typical on-state characteristic

The typical transfer characteristic shows the

200
collector current as a function of the gate-
VCE = 20 V emitter voltage for junction temperatures 25 °C
180
and 125 °C, respectively.
160

140

120
IC [A]

100

80

60

40 125 °C

20 25 °C

0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]

Figure 10: Typical transfer characteristic

Page 16 of 22 Doc. No. 5SYA2059-01 Nov. 08

 Typical switching energies for the IGBT
100
as a function of the collector current at
VCC = 600 V
the specified conditions using the circuit
90 RG = 10 ohm
of Figure 2. Included is a fitted equation
VGE = ±15 V
80 for Esw = Eon + Eoff as a function of
Tvj = 125 °C
collector current.
Lσ = 60 nH
70

60
Eon, Eoff [mJ]

50 Eon

40

30

20
Eoff
10
Esw [mJ] = 1.23 x 10-3 x I C2 + 2.33 x 10-2 x IC + 7.29
0
0 50 100 150 200 250 300
IC [A]

Figure 11: Typical switching energies per pulse vs. collector current

Typical switching energies for the IGBT

45
as a function of the gate resistor at the
VCC = 600 V
specified conditions using the circuit in
40 IC = 100 A
Figure 2.
VGE = ±15 V
35 Tvj = 125 °C
Lσ = 60 nH
30 Eon
Eon, Eoff [mJ]

25

20

15
Eoff
10

0
0 10 20 30 40 50 60 70
RG [ohm]

Figure 12: Typical switching energies per pulse vs. gate resistor

Page 17 of 22 Doc. No. 5SYA2059-01 Nov. 08

 10 Typical input, output and transfer capaci-
tances as a function of the collector-emitter
Cies
voltage at the specified conditions.

VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
C [nF]

1 Coes

Cres

0.1
0 5 10 15 20 25 30 35
VCE [V]
Figure 13: Typical capacitances vs. collector-emitter voltage

20 Typical gate voltage as a function of the gate

charge at collector-emitter voltages 600 V and
800 V, respectively.

VCC = 600 V
15

VCC = 800 V
VGE [V]

10

IC = 100 A
Tvj = 25 °C
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Qg [µC]
Figure 14: Typical gate charge characteristics

Page 18 of 22 Doc. No. 5SYA2059-01 Nov. 08

2.9 Diagrams Diode

Typical values of turn-off parameters

150 300 for the diode as a function of the
Vcc = 900 V
di/dt = 1000 A/µs
forward current at the specified
Tvj = 125 °C conditions using the circuit of Figure 7.
125 250
Lσ = 800 nH
Irr
100 200

Qrr [µC], Irr [A]

Erec [mJ]

75 Qrr 150

50 100

Erec
25 50

0 0
0 50 100 150 200 250 300 350 400
IF [A]

Figure 15: Typical reverse recovery characteristics vs. forward current

Typical values of turn-off parameters

100 200
Irr
for the diode as a function of the rate
Vcc = 900 V
of decline of the forward current at the
IF = 200 A
specified conditions using the circuit of
Tvj = 125 °C
Figure 7.
Lσ = 800 nH
75 150
Qrr [µC], Irr [A]
Erec [mJ]

50 Qrr 100
Erec

25 50

0 0
0 200 400 600 800 1000 1200
di/dt [A/µs]

Figure 16: Typical reverse recovery characteristics vs. di/dt

Page 19 of 22 Doc. No. 5SYA2059-01 Nov. 08

 The typical on-state voltage for the diode is given
400
as a function of the forward current for junction
temperatures 25 °C and 125 °C, respectively.
350
25°C
The characteristics are typical (including bond
wires).
300
125°C

250
IF [A]

200

150

100

50

0
0 0.5 1 1.5 2 2.5
VF [V]

Figure 17: Typical diode forward characteristic

Typical turn-off behaviour of the diode at the

300 200
VCC = 900 V specified conditions.
IF = 200 A
200 di/dt = 1000 A/µs 0
Tvj = 125 °C
Lσ = 800 nH
100 -200

IR
0 -400
VR [V]
IF [A]

-100 -600

-200 VR -800

-300 -1000

-400 -1200
0 400 800 1200 1600 2000 2400
time [ns]

Figure 18: Typical diode reverse recovery behaviour

Page 20 of 22 Doc. No. 5SYA2059-01 Nov. 08

3 Testing, Shipment, Storage and Handling of IGBT and Diode dies

Chips are 100% probed for static electrical parameters prior to shipment. The parameters which cannot be
measured during wafer testing (such as dynamic characteristics) are guaranteed by the design-qualification
tests and are monitored on a sample basis. Additionally, a thorough visual inspection is performed at the
wafer-labelling stage just prior to packing. Different shipment and packaging options are available: chips can
be supplied in industry-standard waffle-pack trays as sawn and picked dies. Alternatively wafers can be
supplied un-sawn or sawn on foil (with ring frame). In the case of wafer shipments, rejected dies are inked
during probe testing as part of the test process.

Note that dies rated above 1700 V can only be supplied in waffle packs.

Chip mounting requires a high level of cleanliness and chips must be handled with extreme caution. All chips
should be manipulated and placed using rubber vacuum pencils. It is strongly recommended that chips be
utilised immediately after unpacking or be stored in a dry nitrogen atmosphere at temperatures between 15
°C and 35 °C. IGBT chips, being MOS-controlled devices, are electro-statically sensitive and should be
handled according to standard ESD procedures with ESD protected equipment.

4 Assembly Recommendations

4.1 Die Attachment

ABB chips have a backside metallization (collector or cathode) consisting of four metallic layers (Al/Ti/Ni/Ag)
suitable for soldering. Soldering temperatures should not exceed a maximum of 350 °C or a plateau
temperature of 340 °C for more than 5 minutes. Measures should be taken to avoid chip misalignment as a
result of floating during the soldering process.

4.2 Wire bonding

The chip front-side metallization (emitter or anode) for dies designed for contact through wire bonding is
finished in aluminium-silicon suitable for standard ultrasonic wire bonding processes. Aluminium (99.999%)
wire bonds are normally used with the thickness and number of wire bonds mainly determined by the required
current rating. During the wire-bonding process, it is important to protect against damage to the chips due to
wire-bond misalignment, excessive pressure or resonance of the substrate which could damage the gate
oxide layer or termination areas.

4.3 Surface coverage

Please be aware that the dies cannot be operated without further protection against voltage flash-overs.
Typically this protection is provided by encapsulation with silicone gel.

For detailed information please contact your manufacturer or distributor of silicone gel.

Page 21 of 22 Doc. No. 5SYA2059-01 Nov. 08

5 Additional notes

5.1 References

1) IEC 60747-1..9 “Semiconductor devices”

2) 5SYA2042 “Failure rates of HiPak modules due to cosmic ray”
3) 5SYA2045 “Thermal run-away during blocking”
4) 5SYA2051 “Voltage ratings of high power semiconductors”
5) 5SYA2053 “Applying IGBTs”
6) 5SYA2058 “Surge currents for IGBT diodes”
The application notes, references 2 to 5, are available at www.abb.com/semiconductors.

5.2 Application support

For further information please contact:

Customer support
Raffael Schnell
Phone +41 58 5861 360, fax +41 58 5861 306
e-mail raffael.schnell@ch.abb.com

Address:
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg
Switzerland
E-Mail abbsem@ch.abb.com
Internet www.abb.com/semiconductors

Data sheets for the devices and your nearest sales office can be found on the ABB Switzerland Ltd,
Semiconductors internet web site:
http://www.abb.com/semiconductors

Page 22 of 22 Doc. No. 5SYA2059-01 Nov. 08