BAW56/BAV70/BAV99

SOT-23 Plastic-Encapsulate Diodes

Switching Diodes

Features SOT- 23
● Fast Switching Speed
● For General Purpose Switching Applications
● High Conductance
3

Marking: 2
BA W56 BAV70 BAV99
1

MARKING:A1 MARKING A4 MARKING:A7

Parameter Symbol Limit Unit

Reverse Voltage VR 70 V

Forward Current IF 200 mA

Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A

Power Dissipation PD 225 mW

Thermal Resistance Junction to Ambient RθJA 556 ℃/W

Junction Temperature TJ 150 ℃

Storage Temperature range TSTG -55~+150 ℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter Symbol Min Typ Max Unit Conditions

Reverse breakdown voltage VR 70 V IR=100μA

VF1 0.715 V IF=1mA

VF2 0.855 V IF=10mA

Forward voltage
VF3 1 V IF=50mA
VF4 1.25 V IF=150mA
Reverse current IR 2.5 μA VR=70V

Capacitance between terminals CT 1.5 pF VR=0,f=1MHz

IF = IR = 10mA,
Reverse recovery time t rr 6 ns
Irr= 0.1 x IR, RL = 100Ω

1
High Diode Semiconductor
Typical Characteristics

Forward Characteristics Reverse Characteristics

300 1000

100
300
(mA)

(nA)
Ta=100℃
30
℃
100
00
IF

REVERSE CURRENT IR
=1
Ta

5℃
FORWARD CURRENT

10
=2
Ta

30

10 Ta=25℃
1

3
0.3

0.1 1
0.0 0.4 0.8 1.2 1.6 0 20 40 60 80

FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V)

Capacitance Characteristics Power Derating Curve

1.4 300
Ta=25℃
f=1MHz

250
CAPACITANCE BETWEEN TERMINALS

(mW)

1.3

200
PD
POWER DISSIPATION
CT (pF)

1.2 150

100

1.1

50

1.0 0
0 5 10 15 20 0 25 50 75 100 125 150

REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (℃)

High Diode Semiconductor 2

SOT-23 Package Outline Dimensions

SOT-23 Suggested Pad Layout

JSHD
JSHD

High Diode Semiconductor 3

Reel Taping Specifications For Surface Mount Devices-SOT-23

30

High Diode Semiconductor 4