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Novel Mid-Infrared Photodetectors and Emitters Using Black Phosphorus-Based Heterostructures

This paper presents novel mid-infrared photodetectors and emitters utilizing black phosphorus-based van der Waals heterostructures, demonstrating high operation speed, responsivity, and stability at room temperature. The hybrid photodetector effectively absorbs mid-infrared light and generates photocurrent, while on-chip light emitters are shown to produce electroluminescence when biased. The findings suggest potential applications in on-chip sensing and spectroscopic technologies, particularly for medical detection in the longwave infrared range.

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Bharat Kashyap
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23 views3 pages

Novel Mid-Infrared Photodetectors and Emitters Using Black Phosphorus-Based Heterostructures

This paper presents novel mid-infrared photodetectors and emitters utilizing black phosphorus-based van der Waals heterostructures, demonstrating high operation speed, responsivity, and stability at room temperature. The hybrid photodetector effectively absorbs mid-infrared light and generates photocurrent, while on-chip light emitters are shown to produce electroluminescence when biased. The findings suggest potential applications in on-chip sensing and spectroscopic technologies, particularly for medical detection in the longwave infrared range.

Uploaded by

Bharat Kashyap
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Invited Paper

Novel mid-infrared photodetectors and emitters using black


phosphorus-based heterostructures
Chang-Hua Liu1, 2
1
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan
2
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan
Keywords: Two-dimensional materials, Van der Waals heterostructures, Black phosphorus, Mid-
infrared, Light emitting diodes
Abstract
In this paper, we will outline the architectures of waveguide-integrated mid-infrared photodetectors,
composed of black phosphorus-based van der Waals (vdW) heterostructures. The performed hybrid detector
can detect broad spectral of light (λ: 3−4 μm) and show the feature of high operation speed (>10 MHz),
high responsivity and long-term stability at room temperature. By exploiting this hybrid device platform,
we further demonstrate that on-chip mid-infrared sources can be readily realized, showing great promise
for on-chip sensing and spectroscopic applications.
1. Introduction
Developing high-performing and silicon compatible mid-infrared optoelectronics is essential for on-chip
sensing and spectroscopic applications. Conventionally, these devices are realized by exploiting
III−V/II−VI compound semiconductors as optoelectronic materials. But their performances are typically
suffered from the lattice and thermal mismatch at heterointerfaces.1,2 In contrast, black phosphorus (BP)
can be exploited to address such a challenge. This is because BP owns the direct and narrow band gap
(~0.33 eV). Additionally, it can be assembled with different two-dimensional materials, such as graphene,
transition metal dichalcogenide, etc., to form the complex heterostructures and such heterostructures can
be transferred onto diverse device platforms due to the van der Waals nature. 3-9 Here, we will exploit the
unique properties of BP to demonstrate on-chip and high-performing mid-infrared optoelectronics.
2. Device structures and results
Figure 1a-b shows the schematic and optical microscope image of our proposed hybrid photodetector,
which is composed of black phosphorus (BP)/molybdenum ditelluride (MoTe2) van der Waals
heterostructures integrated with a silicon-on insulator waveguide. The used BP is 23-nm-thick, applied as
the mid-infrared light absorber. As the BP flake was directly attached to the silicon waveguide, it could
effectively absorb the evanescent field of the guided TE mode and generate the electron-hole pairs. These
electron-hole pairs are then dissociated at the BP/MoTe2 interface due to the type-II band misalignment,
which leads to the photocurrent generation.
To characterize the photoresponses of hybrid photodetector, we biased the BP/MoTe2 heterostructure
photodetector at -1 V and illuminated the mid-infrared light, ranging from λ= 2.8 um to λ= 4.1 um, onto
the grating coupler region. As shown in Fig. 1c, it is clear that the photocurrent can be generated, indicating
that the incident mid-infrared light can be coupled from the free space into the waveguide and the guided
field can interact with the stacked BP/MoTe2 photodetector. Moreover, we note that the amplitude of
photocurrent could quickly increase with the bias voltage (Fig. 1c). This suggests that the applied voltage
could enhance the dissociation of photoexcited electron-hole pairs at the heterointerface and facilitate the
2D Photonic Materials and Devices VI, edited by Arka Majumdar,
Carlos M. Torres, Hui Deng, Proc. of SPIE Vol. 12423, 1242304
© 2023 SPIE · 0277-786X · doi: 10.1117/12.2649520

Proc. of SPIE Vol. 12423 1242304-1


propagation of dissociated photocarriers to the metal contacts. To gain further insight, we extract
photocurrent generation (Iph = Ilight − Idark) and calculate it photoresponsivity. The result clearly indicates
that its responsivity can reach hundreds mA/W at room temperature. In addition, we measured the operation
speed of our developed photodetector by using an acousto-optic modulator. As shown in Fig. 1d-e, the
resolved 90-10% (10-90%) decay time (rise time) is only 50 ns (23 ns), suggesting that our detector can be
operated at MHz high speed. Built on this foundation, we further demonstrate that on-chip mid-infrared
light emitters can be realized by using BP-based heterostructures. Figure 1f shows the SEM image of our
proposed hybrid light emitter. The emitter is composed of graphene/BP/graphene heterostructures. When
applying the bias voltage across two graphene layers, the electrons and holes would be injected into BP,
leading to electroluminescence (EL) generations. Because BP emitter directly attaches to the waveguide,
the emission can evanescently couple and propagate through the waveguide.

Figure 1 (a) Schematic of the waveguide-integrated mid-infrared photodetector. (b) Optical microscope
image of the waveguide-integrated mid-infrared photodetector. (c) Bias-dependent photoresponses. (d-e)
Temporal photoresponses of the hybrid detector. (f) SEM image of the hybrid mid-infrared emitter.
3. Outlook
In this paper, we report a high performing mid-infrared on-chip optoelectronics using BP-based van der
Waals heterostructures. With this framework, we envision that on-chip longwave infrared (LWIR) emitters
and detectors can also be realized by replacing BP with the emerging two-dimensional optoelectronic
materials, such as arsenic-doped black phosphorus and platinum diselenide.4 Notably, these devices would
be useful for medical detection applications, because the LWIR wavelength range includes the atmospheric
window and molecular fingerprints.
Acknowledgements
This work was supported by the National Tsing Hua University under grant 109Q2715E1, the Ministry of
Science and Technology of Taiwan under grant MOST-107-2112-M-007-002-MY3 and MOST-110-2124-
M-007-002). The authors also thank HC Photonics Corporation for the assistance on setting up the mid-
infrared measurement systems.

Proc. of SPIE Vol. 12423 1242304-2


References:
1 Rogalski, A., Antoszewski, J. & Faraone, L. Third-generation infrared photodetector arrays. J.
Appl. Phys. 105, 091101 (2009).
2 Biefeld, R. M., Allerman, A. A. & Kurtz, S. R. Recent advances in mid-infrared (3-6 µm)
emitters. Mater. Sci. Eng., B 51, 1-8 (1998).
3 Xia, F. N., Wang, H. & Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered
material for optoelectronics and electronics. Nature Commun. 5, 4458 (2014).
4 Wang, X. M. & Lan, S. F. Optical properties of black phosphorus. Adv. Opt. Photon. 8, 618-655
(2016).
5 Chang, T.-Y., Chen, P.-L., Yan, J.-H., Li, W.-Q., Zhang, Y.-Y., Luo, D.-I., Li, J.-X., Huang, K.-
P. & Liu, C.-H. Ultra-Broadband, High Speed, and High-Quantum-Efficiency Photodetectors
Based on Black Phosphorus. ACS Appl. Mater. Interfaces 12, 1201−1209 (2020).
6 Chang, T.-Y. et al. Black phosphorus mid-infrared light-emitting diodes integrated with silicon
photonic waveguides. Nano Lett. 20, 6824–6830 (2020).
7 Chen, P. L. et al. Waveguide-Integrated van der Waals Heterostructure Mid-Infrared
Photodetector with High Performance. ACS Appl. Mater. Interfaces 14, 24856-24863 (2022).
8 Chang, T. Y. et al. Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared
Photoresponses. ACS Appl. Mater. Interfaces 14, 32665-32674 (2022).
9 Liu, C. H., Zheng, J. J., Chen, Y. Y., Fryett, T. & Majumdar, A. Van der Waals Materials
Integrated Nanophotonic Devices. Opt. Mater. Exp. 9, 384−399 (2019).

Proc. of SPIE Vol. 12423 1242304-3

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