<IGBT Modules>

CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I C .............…..................… 450A
Collector-emitter voltage V CES .................. 1 2 0 0 V
Maximum junction temperature T v j m a x ......... 1 7 5 °C
DX ●Flat base type
●Copper base plate (Ni-plating)
●RoHS Directive compliant
●Tin plating pin terminals
Collector current I C .............…..................… 450A
Collector-emitter voltage V CES .................. 1 2 0 0 V
Maximum junction temperature T v j m a x ......... 1 7 5 °C
DXP ●Flat base type
●Copper base plate (Ni-plating)
●RoHS Directive compliant
●Tin plating pressfit terminals
dual switch (half-bridge) ●UL Recognized under UL1557, File No. E323585

APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
●VCEsat selection for parallel connection
INTERNAL CONNECTION TERMINAL CODE
9 8
1. TH1 6. C2E1
2. TH2 7. C2E1
Tr2
10 7 3. G1 8. G2
Di1 4. Es1 9. Es2
Di2
11 6 5. Cs1 10. E2
Tr1 11. C1
NTC
Th
1 2 3 4 5

OUTLINE DRAWING Dimension in mm

COM. MOUNTING HOLES SECTION A

Publication Date : September 2017 1

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

OUTLINE DRAWING Dimension in mm

DX TERMINAL

Tolerance otherwise specified

Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

Publication Date : September 2017 2

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

OUTLINE DRAWING Dimension in mm

DXP TERMINAL

PCB DRILL HOLE PATTERN

Tolerance otherwise specified

Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

Publication Date : September 2017 3

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

MAXIMUM RATINGS (T vj =25 °C, unless otherwise specified)

INVERTER PART IGBT/FWD
Symbol Item Conditions Rating Unit
VCES Collector-emitter voltage G-E short-circuited 1200 V
VGES Gate-emitter voltage C-E short-circuited ± 20 V
IC DC, TC=118 °C (Note2, 4) 450
Collector current (Note3)
A
ICRM Pulse, Repetitive 900
(Note2, 4)
Pt ot Total power dissipation TC=25 °C 2500 W
IE (Note1) DC (Note2) 450
Emitter current A
IERM (Note1) Pulse, Repetitive (Note3) 900
MODULE
Symbol Item Conditions Rating Unit
Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
Tv jmax Maximum junction temperature Instantaneous event (overload) 175
(Note4)
°C
TCmax Maximum case temperature 125
Tv jop Operating junction temperature Continuous operation (under switching) -40 ~ +150
°C
Tst g Storage temperature - -40 ~ +125

ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWD
Limits
Symbol Item Conditions Unit
Min. Typ. Max.
ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA
IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA
V G E (t h ) Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V
IC=450 A, VGE=15 V, T v j =25 °C - 1.65 2.05
V C E sa t
Refer to the figure of test circuit T v j =125 °C - 1.85 - V
(Terminal)
(Note5) T v j =150 °C - 1.90 -
Collector-emitter saturation voltage
IC=450 A, T v j =25 °C - 1.50 1.75
V C E sa t
VGE=15 V, T v j =125 °C - 1.70 - V
(Chip)
(Note5) T v j =150 °C - 1.75 -
Cies Input capacitance - - 109.1
Coes Output capacitance VCE=10 V, G-E short-circuited - - 3.1 nF
Cres Reverse transfer capacitance - - 1.4
QG Gate charge VCC=600 V, IC=450 A, VGE=15 V - 3.4 - μC
td(on) Turn-on delay time - - 600
VCC=600 V, IC=450 A, VGE=±15 V,
tr Rise time - - 200
ns
td(off) Turn-off delay time - - 800
RG=1.3 Ω, Inductive load
tf Fall time - - 400
IE=450 A, G-E short-circuited, T v j =25 °C - 1.70 2.25
VEC (Note1)
Refer to the figure of test circuit T v j =125 °C - 1.85 - V
(Terminal)
(Note5) T v j =150 °C - 1.90 -
Emitter-collector voltage
IE=450 A, T v j =25 °C - 1.50 1.85
VEC (Note1)
G-E short-circuited, T v j =125 °C - 1.50 - V
(Chip)
(Note5)
T v j =150 °C - 1.50 -
(Note1)
trr Reverse recovery time VCC=600 V, IE=450 A, VGE=±15 V, - - 400 ns
Qrr (Note1)
Reverse recovery charge RG=1.3 Ω, Inductive load - 35.1 - μC
Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=450 A, - 43.1 -
mJ
E of f Turn-off switching energy per pulse VGE=±15 V, RG=1.3 Ω, T v j =150 °C, - 45 -
(Note1)
Err Reverse recovery energy per pulse Inductive load - 32.4 - mJ
R CC'+EE' Internal lead resistance Main terminals-chip, per switch, TC=25 °C (Note4) - 0.75 - mΩ
rg Internal gate resistance Per switch - 0.67 - Ω

Publication Date : September 2017 4

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

ELECTRICAL CHARACTERISTICS (cont.; Tvj=25 °C, unless otherwise specified)

NTC THERMISTOR PART
Limits
Symbol Item Conditions Unit
Min. Typ. Max.
R25 Zero-power resistance TC=25 °C (Note4) 4.85 5.00 5.15 kΩ
ΔR/R Deviation of resistance R100=493 Ω, TC=100 °C (Note4) -7.3 - +7.8 %
B(25/50) B-constant Approximate by equation (Note6) - 3375 - K
(Note4)
P25 Power dissipation TC=25 °C - - 10 mW

THERMAL RESISTANCE CHARACTERISTICS

Limits
Symbol Item Conditions Unit
Min. Typ. Max.
Rt h(j -c)Q Junction to case, per Inverter IGBT (Note4) - - 60
Thermal resistance K/kW
Rt h(j -c)D Junction to case, per Inverter FWD (Note4) - - 87
(Note4, 7)
Case to heat sink, Thermal grease applied - 11.5 -
Rt h(c-s) Contact thermal resistance K/kW
per 1 module, PC-TIM applied (Note4, 8) - 3.1 -

MECHANICAL CHARACTERISTICS
Limits
Symbol Item Conditions Unit
Min. Typ. Max.
Mt Mounting torque Main terminals M 6 screw 3.5 4.0 4.5 N·m
Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m
Terminal to terminal 17 - -
Solder pin type (DX) mm
Terminal to base plate 16.4 - -
ds Creepage distance
Terminal to terminal 17 - -
Pressfit pin type (DXP) mm
Terminal to base plate 16.8 - -
Terminal to terminal 10 - -
Solder pin type (DX) mm
Terminal to base plate 16.2 - -
da Clearance
Terminal to terminal 10 - -
Pressfit pin type (DXP) mm
Terminal to base plate 16.2 - -
ec Flatness of base plate On the centerline X, Y (Note9)
±0 - +200 μm
m mass - - 300 - g
*: This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).
2. Junction temperature (T v j ) should not increase beyond T v j m a x rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T v j ) dose not exceed T v j m a x rating.
4. Case temperature (TC) and heat sink temperature (T S ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.
Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
R 25 1 1
6. B( 25 / 50) = ln( ) /( − )
R 50 T25 T50
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K)/D(C-S)=50 μm.
8. Typical value is measured by using PC-TIM of λ=3.4 W/(m·K)/D(C-S)=50 μm.
9. The base plate (mounting side) flatness measurement points (X, Y) are shown in the following figure.
-:Concave

Mounting side
+:Convex
-:Concave

2 mm
+:Convex

X
Mounting side

Mounting side 2 mm

Publication Date : September 2017 5

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Note10. Use the following screws when mounting the printed circuit board (PCB) on the standoffs.
PCB thickness : t=1.6
Tightening torque
Type Manufacturer Size Recommended tightening method
(N・m)
(1) PT EJOT K25×8 0.55 ± 0.055
(2) PT K25×10 0.75 ± 0.075 N・m by handwork (equivalent to 30 rpm
(3) DELTA PT 25×8 0.55 ± 0.055 N・m by mechanical screw driver)
(4) DELTA PT 25×10 0.75 ± 0.075 N・m ~ 600 rpm (by mechanical screw driver)
(5) B1 - φ2.6×10
0.75 ± 0.075 N・m
tapping screw φ2.6×12

RECOMMENDED OPERATING CONDITIONS

Limits
Symbol Item Conditions Unit
Min. Typ. Max.
VCC (DC) Supply voltage Applied across C1-E2 terminals - 600 850 V
VGEon Gate (-emitter drive) voltage Applied across G1-E1s/G2-E2s terminals 13.5 15.0 16.5 V
RG External gate resistance Per switch 1.3 - 10 Ω

Publication Date : September 2017 6

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm

DX

DXP

Tr1/Tr2: IGBT, Di1/Di2: FWD, Th: NTC thermistor

Option: PC-TIM applied baseplate outline

Publication Date : September 2017 7

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

TEST CIRCUIT AND WAVEFORMS

～
～
vGE 90 %
11 iE
5 iE Q r r =0.5×I r r ×t r r
0V 0
Load t
3
-VGE IE
6/7 + VCC trr
4 iC t

～
～
90 % 0A
+VGE RG
vCE Irr
8
0 vGE iC 10% 0.5×I r r
-VGE 9 10 0A
tr tf t
td(on) td(off)
Switching characteristics test circuit and waveforms t r r , Q r r characteristics test waveform

IEM
iE vEC
iC ICM
ICM iC VCC
VCC vCE
vCE VCC

0A t

0.1×ICM 0.1×VCC 0.02×ICM

0.1×VCC 0 t
0 t 0V t

ti ti ti
IGBT Turn-on switching energy IGBT Turn-off switching energy FWD Reverse recovery energy
Switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)

TEST CIRCUIT

11 11
11 5 11 5
5 G-E short- 5 G-E short-
G-E short-
VGE=15 V circuited circuited
circuited IE
IC 3 3
3 3
V V
4 4
4 4
V 6/7
6/7 V 6/7
6/7
G-E short-
G-E short- VGE=15 V G-E short-
circuited circuited
circuited IE
8 IC 8
8 8
10 10
10 9 10 9
9 9

Tr1 Tr2 Di1 Di2

V CEsa t characteristics test circuit VEC characteristics test circuit

Publication Date : September 2017 8

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL) CHARACTERISTICS
(TYPICAL)

T v j =25 °C (chip) VGE=15 V (chip)

(V)
VGE=20 V
12 V T v j =150 °C

COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat

13.5 V
15 V T v j =125 °C
COLLECTOR CURRENT IC (A)

11 V

10 V
T v j =25 °C

9V

8V

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER VOLTAGE CHARACTERISTICS FREE WHEELING DIODE

(TYPICAL) FORWARD CHARACTERISTICS
(TYPICAL)

T v j =25 °C (chip) G-E short-circuited (chip)

T v j =125 °C

IC=900 A
(V)
VCE

IC=450 A
EMITTER CURRENT IE (A)

T v j =150 °C
COLLECTOR-EMITTER VOLTAGE

IC=225 A

T v j =25 °C

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

Publication Date : September 2017 9

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)

VCC=600 V, RG=1.3 Ω, VGE=±15 V, INDUCTIVE LOAD VCC=600 V, IC=450 A, VGE=±15 V, INDUCTIVE LOAD
-----------------: T v j =150 °C, - - - - -: T v j =125 °C -----------------: T v j =150 °C, - - - - -: T v j =125 °C

td(off)
(ns)

(ns)
td(on)
SWITCHING TIME

SWITCHING TIME
td(off)
tr

td(on)
tf tf

tr

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS

(TYPICAL) (TYPICAL)

VCC=600 V, RG=1.3 Ω, VGE=±15 V, INDUCTIVE LOAD, VCC=600 V, IC/IE=450 A, VGE=±15 V, INDUCTIVE LOAD,
-----------------: T v j =150 °C, - - - - -: T v j =125 °C, PER PULSE -----------------: T v j =150 °C, - - - - -: T v j =125 °C, PER PULSE

Eon
REVERSE RECOVERY ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

Eon
SWITCHING ENERGY (mJ)

SWITCHING ENERGY (mJ)

E off

E off
Err

Err

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

EMITTER CURRENT IE (A)

Publication Date : September 2017 10

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS FREE WHEELING DIODE
(TYPICAL) REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)

VCC=600 V, RG=1.3 Ω, VGE=±15 V, INDUCTIVE LOAD

G-E short-circuited, T v j =25 °C ---------------: T j =150 °C, - - - - -: T j =125 °C

Irr

Cies
(nF)

trr

(A)
CAPACITANCE

Coes (ns), I r r
trr

Cres

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

GATE CHARGE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(TYPICAL) (MAXIMUM)

Single pulse, TC=25 °C

VCC=600 V, IC=450 A, T v j =25 °C R t h ( j - c ) Q =60 K/kW, R t h ( j - c ) D =87 K/kW
NORMALIZED TRANSIENT THERMAL RESISTANCE Z t h ( j - c )
GATE-EMITTER VOLTAGE VGE (V)

GATE CHARGE QG (nC) TIME (S)

Publication Date : September 2017 11

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
INVERTER PART
TURN-OFF SWITCHING SAFE OPERATING AREA SHORT-CIRCUIT SAFE OPERATING AREA
(REVERSE BIAS SAFE OPERATING AREA) (MAXIMUM)
(MAXIMUM)

VCC≤850 V, RG=1.3~10 Ω, VGE=±15 V,

-----------------: T v j =25~150 °C (Normal load operations (Continuous) VCC≤800 V, RG=1.3~10 Ω, VGE=±15 V,
- - - - - -: T v j =175 °C (Unusual load operations (Limited period) Tvj= 25 ~ 150 °C, tW≤8 μs, Non-Repetitive
NORMALIZED COLLECTOR CURRENT IC

NORMALIZED COLLECTOR CURRENT IC

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)

NTC thermistor part

TEMPERATURE CHARACTERISTICS
(TYPICAL)
R (kΩ)
RESISTANCE

TEMPERATURE T (°C)

Note: The characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

Publication Date : September 2017 12

CMH-11082-B Ver.1.2
<IGBT Modules>
CM450DX-24T/CM450DXP-24T
HIGH POWER SWITCHING USE
INSULATED TYPE

Keep safety first in your circuit designs!

This product is designed for industrial application purpose. The performance, the quality and support level of the product is
guaranteed by “Customer's Std. Spec.”.
Mitsubishi Electric Corporation puts its reasonable effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur with them by the reliability lifetime such as Power Cycle, Thermal Cycle or others,
or to be used under special circumstances(e.g. high humidity, dusty, salty, highlands, environment with lots of organic matter /
corrosive gas / explosive gas, or situation which terminal of semiconductor products is received strong mechanical stress).
In the customer's research and development, please evaluate it not only with a single semiconductor product but also in the
entire system, and judge whether it's applicable. Furthermore, trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (i) placement of substitutive, auxiliary circuits (e.g. appropriate fuse or circuit breaker between a power supply and
semiconductor products), (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product
best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other
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© 2017 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : September 2017 13
CMH-11082-B Ver.1.2