Advanced Power

Electronics Corp. AP0203GMT-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement

D
SO-8 Compatible with Heatsink BV DSS 30V
Low On-resistance R DS(ON) 2.2mΩ
G
RoHS-compliant, halogen-free ID 90A
S

D
Description D
D
Advanced Power MOSFETs from APEC provide the designer with D
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.

The PMPAK®5x6 package is specially designed for DC-DC converter S

applications, with a foot print that is compatible with the popular SO-8 S
S
and offers a backside heat sink and lower package profile. G PMPAK®5x6

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID at TC=25°C Continuous Drain Current (Chip) 155 A
3
ID at TA=25°C Continuous Drain Current 38 A
3
ID at TA=70°C Continuous Drain Current 30 A
1
IDM Pulsed Drain Current 300 A
PD at TC=25°C Total Power Dissipation 83.3 W
PD at TA=25°C Total Power Dissipation 5 W
4
EAS Single Pulse Avalanche Energy 28.8 mJ
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data

Symbol Parameter Value Units

Rthj-c Maximum Thermal Resistance, Junction-case 1.5 °C/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 °C/W

Ordering Information
AP0203GMT-HF-3TR RoHS-compliant halogen-free PMPAK®5x6, shipped on tape
and reel (3000pcs/reel)

®
PMPAK is a registered trademark of Advanced Power Electronics Corp.

©2009 Advanced Power Electronics Corp. USA 200910191-3 1/5

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 Advanced Power
Electronics Corp. AP0203GMT-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A - - 2.2 mΩ
VGS=4.5V, ID=20A - - 3.6 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 80 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=20A - 38 60 nC
Qgs Gate-Source Charge VDS=15V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 22 - nC
2
td(on) Turn-on Delay Time VDS=15V - 13.5 - ns
tr Rise Time ID=1A - 11.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 52 - ns
tf Fall Time RD=15Ω - 42 - ns
Ciss Input Capacitance VGS=0V - 3030 4850 pF
Coss Output Capacitance VDS=25V - 820 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 420 - pF
Rg Gate Resistance f=1.0MHz - 1.3 - Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=30A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 47 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 57 - nC

Notes:
1.Pulse width limited by maximum junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60°C/W at steady state.
4.Starting Tj=25oC, VDD=25V, L=0.1mH, RG=25Ω , IAS=24A.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2009 Advanced Power Electronics Corp. USA 2/5

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 Advanced Power
Electronics Corp. AP0203GMT-HF-3
Typical Electrical Characteristics
300 200

T C =25 C
o 10V o
T C =150 C 10V
7.0V 7.0V
250
6.0V 160
6.0V
5.0V 5.0V

ID , Drain Current (A)

ID , Drain Current (A)

200
V G = 4.0 V V G =4.0V
120

150

80

100

40
50

0 0
0.0 2.0 4.0 6.0 8.0 10.0 0.0 1.0 2.0 3.0 4.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

3.2 2.0

I D =20A I D =30A
o
T C =25 C V G =10V

2.8 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

2.4 1.2

2 0.8

1.6 0.4
2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
40 1.6
Normalized VGS(th) (V)

30 1.2
IS(A)

T j =150 o C T j =25 o C
20 0.8

10 0.4

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

©2009 Advanced Power Electronics Corp. USA 3/5

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 Advanced Power
Electronics Corp. AP0203GMT-HF-3
Typical Electrical Characteristics (cont.)

10
f=1.0MHz
4000

I D =20A
VGS , Gate to Source Voltage (V)

3000
C iss

C (pF)
6

V DS =15V
2000

1000

2 C oss
C rss

0 0
0 10 20 30 40 50 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

0.2
Operation in this
area limited by
100 RDS(ON) 100us 0.1
0.1

0.05
ID (A)

0.02

1ms 0.01

PDM
10 0.01 t
10ms Single Pulse
T
100ms
Duty factor = t/T
T C =25 o C Peak Tj = PDM x R thjc + T c
DC
Single Pulse
1 0.001
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform

©2009 Advanced Power Electronics Corp. USA 4/5

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 Advanced Power
Electronics Corp. AP0203GMT-HF-3
Package Dimensions: PMPAK®5x6

Millimeters
SYMBOLS
MIN NOM MAX
A 0.90 1.00 1.10
b 0.33 0.41 0.51
C 0.20 - -
D1 4.80 4.90 5.10
D2 - - 4.20
E 5.90 6.00 6.10
E1 (Reference) 5.70 5.75 5.80
E2 (Reference) 3.38 3.58 3.78
e 1.27 BSC
H - - 0.62
K (Reference) 0.70 - -
L 0.51 0.61 0.71
L1 - - 0.20
α (Reference) 0° - 12°

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.
Marking Information:

Product: AP0203

Package code
0203GMT GMT = RoHS-compliant PMPAK®5x6
YWWSSS Date Code (YWWSSS)
Y: Last Digit Of The Year
WW: Work week
SSS: Lot code sequence

©2009 Advanced Power Electronics Corp. USA 5/5

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