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Unit 3 VLSI

The document explains the operational regions of MOSFETs, detailing how the gate-to-source voltage (VGS) affects channel formation and current flow. It describes three key regions: cut-off, linear, and saturation, each defined by specific voltage conditions for NMOS and PMOS devices. The cut-off region has negligible current, the linear region shows a direct relationship between current and voltages, and the saturation region indicates a constant current despite increasing drain voltage.

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18 views36 pages

Unit 3 VLSI

The document explains the operational regions of MOSFETs, detailing how the gate-to-source voltage (VGS) affects channel formation and current flow. It describes three key regions: cut-off, linear, and saturation, each defined by specific voltage conditions for NMOS and PMOS devices. The cut-off region has negligible current, the linear region shows a direct relationship between current and voltages, and the saturation region indicates a constant current despite increasing drain voltage.

Uploaded by

sai778x
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Regions of operation of MOSFET:

For an N-MOS device, the channel is formed by electrons. So, to attract electrons, gate voltage
must be greater than source voltage. For the formation of channel, the difference between V G and
VS (VG – VS) must be greater than Vth (threshold voltage of the MOS).

Threshold voltage is defined as the minimum difference in gate-to-source voltage needed for the
formation of channel in a MOS device. For NMOS, Vth is positive as for channel formation gate
needs to be at higher voltage as explained above. Similarly, for PMOS, Vth is negative as gate
needs to be at lower voltage than source for channel to be formed.

On increasing gate voltage beyond threshold voltage, current through MOS increases with
increasing gate voltage. Also, if we increase drain voltage keeping gate voltage constant, current
increases till a particular drain voltage. After that, increasing drain voltage does not affect the
current. Depending upon the relative voltages of its terminals, MOS is said to operate in either of
the cut-off, linear or saturation region.

• Cut off region – A MOS device is said to be operating when the gate-to-source voltage is
less than Vth. Thus, for MOS to be in cut-off region, the necessary condition is –

0 < VGS < Vth - for NMOS


0 > VGS > Vth - for PMOS (as
threshold voltage of PMOS is negative)

Cut-off region is also known as sub-threshold region. In this region, the dependence of current
on gate voltage is exponential. The magnitude of current flowing through MOS in cut-off region
is negligible as the channel is not present. The conduction happening in this region is known as
sub-threshold conduction.

• Linear or non saturation region – For an NMOS, as gate voltage increases beyond
threshold voltage, channel is formed between source and drain terminals. Now, if there is
voltage difference between source and drain, current will flow. The magnitude of current
increases linearly with increasing drain voltage till a particular drain voltage determined
by the following relations –
VGS ≥ Vth
VDS < VGS – Vth
The current is, then, represented as a linear function of gate-to-source and drain-to-source
voltages. That is why, MOS is said to be operating in linear region. The linear region voltage-
current relation is given as follows:

Similarly, for P-MOS transistor, condition for P-MOS to be in linear region is represented as:
VGS < Vth OR VSG > |Vth|
And VDS > VGS + Vth OR VSD < VSG - |Vth|

• Saturation Region – For an NMOS, at a particular gate and source voltage, there is a
particular level of voltage for drain, beyond which, increasing drain voltage seems to
have no effect on current. When a MOS operates in this region, it is said to be in
saturation. The condition is given as:

VGS ≥ Vth
VDS > VGS – Vth
The current, now, is a function only of gate and source voltages:

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