HP - 95 - 1 Clase 2020
HP - 95 - 1 Clase 2020
S-Parameter
Techniques
for Faster, More Accurate Network Design
http://www.hp.com/go/tmappnotes
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
The ease with which scattering parameters can be measured
makes them especially well suited for describing transistors and
other active devices. Measuring most other parameters calls for
the input and output of the device to be successively opened
and short circuited. This can be hard to do, especially at RF
frequencies where lead inductance and capacitance make short
and open circuits difficult to obtain. At
higher frequencies these measurements
typically require tuning stubs, separately
adjusted at each measurement frequency,
to reflect short or open circuit conditions
to the device terminals. Not only is this
inconvenient and tedious, but a tuning
stub shunting the input or output may
cause a transistor to oscillate, making
the measurement invalid.
Using S-Parameters
Another important advantage of s-parameters stems from
the fact that traveling waves, unlike terminal voltages and
currents, do not vary in magnitude at points along a lossless
transmission line. This means that scattering parameters can
be measured on a device located at some distance from the
measurement transducers, provided that the measuring device
and the transducers are connected by low-loss transmission lines.
Derivation
Transmission and Reflection
Generalized scattering parameters have been defined by When light interacts with a
K. Kurokawa [Appendix A]. These parameters describe lens, as in this photograph,
the interrelationships of a new set of variables (ai , bi). part of the light incident on
The variables ai and bi are normalized complex voltage waves the woman's eyeglasses is
incident on and reflected from the ith port of the network. reflected while the rest is
transmitted. The amounts
They are defined in terms of the terminal voltage Vi , the
reflected and transmitted
terminal current I i , and an arbitrary reference impedance Z i , are characterized by optical
where the asterisk denotes the complex conjugate: reflection and transmission
coefficients. Similarly,
V + Zi Ii Vi − Z i* I i scattering parameters are
ai = i (4) bi = (5) measures of reflection and
2 Re Z i 2 Re Z i transmission of voltage
waves through a two-port
9 electrical network.
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
For most measurements and calculations it is convenient Scattering parameters
to assume that the reference impedance Zi is positive relationship to optics
and real. For the remainder of this article, then, all Impedance mismatches
variables and parameters will be referenced to a single between successive
positive real impedance, Z0. elements in an RF circuit
relate closely to optics,
The wave functions used to define s-parameters for a where there are successive
two-port network are shown in Fig. 2. differences in the index of
refraction. A material’s
ZS characteristic impedance,
Z0, is inversely related to
a1 a2 the index of refraction, N:
TWO - PORT ZL
VS
b1 NETWORK b2 Z0
ε = 1
377 N
The s-parameters s 11 and
Figure 2 s 22 are the same as optical
Two-port network showing incident waves reflection coefficients;
(a 1 , a 2 ) and reflected waves (b 1 , b 2 ) used in s 12 and s 21 are the same
s-parameter definitions. The flow graph for as optical transmission
this network appears in Figure 3. coefficients.
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
The independent variables a1 and a2 are normalized
incident voltages, as follows:
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
The linear equations describing the two-port network are Limitations of
then: lumped models
b 1 = s 11 a 1 + s 12 a 2 At low frequencies most
(10) circuits behave in a
b 2 = s 21 a 1+ s 22 a 2 (11) predictable manner and
can be described by a
The s-parameters s11, s22, s21, and s12 are: group of replaceable,
lumped-equivalent black
b1
s 11= = Input reflection coefficient with (12) boxes. At microwave
a 1 a = 0 the output port terminated by a frequencies, as circuit
2 matched load (Z =Z sets a =0) element size approaches
L 0 2
the wavelengths of the
b2
s 22 = = Output reflection coefficient (13) operating frequencies,
a 2 a = 0 with the input terminated by a such a simplified type
1 matched load (ZS=Z0 sets Vs=0) of model becomes
inaccurate. The physical
b2
s 21 = = Forward transmission (insertion) (14) arrangements of the
a 1 a = 0 gain with the output port circuit components can
2 terminated in a matched load. no longer be treated as
b1 black boxes. We have to
s 12 = = Reverse transmission (insertion) (15) use a distributed circuit
a2 gain with the input port element model and
a 1 =0 terminated in a matched load.
s-parameters.
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Test & Measurement
Application Note 95-1
S-Parameter
Using S-Parameters
The previous four equations show that s-parameters are
simply related to power gain and mismatch loss,
quantities which are often of more interest
than the corresponding voltage functions:
2 Power reflected from the network input
s11 =
Power incident on the network input
2
s12 = Reverse transducer power gain with Z0 load and source
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Relationships
s-parameters y-parameters
in terms of y-parameters in terms of s-parameters
(1 − y 11 )(1 + y 22 ) + y 12 y 21 (1 + s 22 )(1 − s 11 ) + s 12 s 21
s 11 = y 11 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
−2y 12 −2s 12
s 12 = y 12 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
−2y 21 −2s 21
s 21 = y 21 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
(1 + y 11 )(1 − y 22 ) + y 12 y 21 (1 + s 11 )(1 − s 22 ) + s 12 s 21
s 22 = y 22 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
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