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ESE (Mains), 2021

ELECTRONICS ENGINEERING
1. (a) An N-type silicon bar of conductivity  = 1/  -cm has a battery applied across it as shown in the
figure below. Assume a hypothetical situation in which the battery is able to sweep some electrons into
a region of length 0.03 cm in the middle of the bar, thereby locally increasing the electron density in the
region by 1% of the thermal equilibrium density. Make the rough calculation of the order of magnitude
of the electric field which will develop there due to this increase in majority carrier density. Assume,
mobility of electron  n = 1350 cm2/V-s,

Permittivity of Si Si = 10–12 F/cm.

(b) The work function  m of platinum is 5 eV and the electron affinity for silicon is  Si = 4.05 eV.
Determine the barrier height Bn (barrier height for transfer electron from metal to
semiconductor) and BP (barrier height for transfer) of holes from metal to semiconductor).
Also calculate the built-in voltage Vbi for metal-semiconductor contact of platinum with N-type
silicon having doping concentration ND = 2.8 × 1014 /Cm3. Assume that effective density of
states in the conduction band edge is NC = 2.8 × 1019/cm3, KT = 0.025 eV at room temperature,
EG = 1.1 eV.
(c) Write the mesh current matrix equation for the network of figures shown by inspection, and
solve for the currents.

(d) The atomic packing schemes for some hypothetical material for several different
crystallographic directions are shown. For each direction the circles represents only those
atoms contained within a unit cell, where circles are reduced from their actual diameter/size.
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Identify the unit cell and the crystal system it belongs to.
(e) What are the different types of batteries? How is the right battery selected for an application?
2. (a) Solve for V0 in the circuit shown in the figure.

(b) An MOS capacitor having the gate oxide thickness, tox = 0.1 m and substrate boron doping
density NA = 1015 /cm3 is biased in the depletion mode with a gate voltage, VG. If the surface
potential is 0.2 V for this bias condition, determine the following:
(i) Peak electric in silicon substrate
(ii) Electric field in the oxide
(iii) The gate voltage VG
(iv) Thermal equilibrium hole concentration, pp and the hole concentration, ps at the silicon
surface.
Note that  0 = 8.854 × 10–14 F/cm, s = 12 for silicon and  ox = 4 for SiO2.
(c) (i) A silicon P-N junction photodiode has a uniform area cross-section of A = 0.04 cm2.
In the p-region, NA = pp = 1.5 × 1015/cm3 and
In the N-region, ND = nn = 1.5 × 1013/cm3.
The intrinsic carrier density in silicon is ni = 1.5 × 1010/cm3. The diffusion constant for
electrons and holes are Dn = 35 cm2/s and Dp = 12.5 cm/s. Holes lifetime in the N-region is
 p = 100  sec and electron lifetime in the p-region is n  35  sec. Assuming that light
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of a suitable mixture of wavelength falls on the diode producing an idealized generation fo

EHP, GL = 1016 pair/sec/cm2 uniformly at all points within the volume of diode, and the
diode is kept short circuited, calculate the light induced current through the photodiode.
(ii) In the photodiode of Q2(c)(i), if instead of short circuiting, the diode is kept open circuited,
calculate the open circuit photo voltage, Voc across the diode. Assume VT = 0.026 V at
room temperature.
3. (a) (i) Explain, how Burgers vector is invariant of the type of dislocation.
(ii) Out of (100) and (110) crystallographic planes, which plane will have more surface energy
for copper single crystal?
Given : Bond energy per bond for copper = 65.4 kJ/mol
Lattice parameter for copper = 3.61 Å
Avogadro’s number = 6.023 × 1023 g/mol
(b) Use the superposition theorem to find I0 in the circuit shown in the figure.

(c) A separately excited DC generator is characterized by the magnetization curve of the figure
shown below.
(i) If the prime mover is driving the generator at 800 rev/min, what is the no-load terminal
voltage, Va?
(ii) If a 1  load is connected to the generator, what is the generated voltage?
Generator ratings: 100 V, 100 A, 1000 rev/min
Circuit parameters: Ra = 0.14  , Vf = 100 V, Rf = 100 
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4. (a) (i) Design a photo detector circuit of the form as shown in the figure below to give an output
voltage of v0 = – 200 mV at an incident power density of Dp = 500 nW/cm2. The current
responsitivity of the photodiode is Di = 1 A/W, and the active area is a = 400 mm2.

(ii) The measured values of a diode at a junction temperature of 25ºC are given by
0.5V at I D  5A
VD  
0.6V at I D  100A
Determine the (I) Emission coefficient  , and (II) the leakage current Is. Assume VT = 25.8
mV.
(b) (i) (I) Design the basic current source shown in the figure below to give an output current, I0
= 5A .
(II) For Q4(b)(i)(I) calculate the output resistance R0. Thevenin’s equivalent voltage VTH,
and the collector current ration if VCE 2 = 20 V.
The BJT parameters are F  100 , VCC = 30 V, VBE VBE1  VBE2  0.7 V , and the early
voltage VA = 150 V.
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(ii) Using the phasor approach, determine the current i(t) in a circuit described by the integro-
differentia equation
di
4i  8 idt  3  50cos(2t  75º )
dt
(c) (i) Draw a schematic cross-sectional view of a MOSFET transistor. How is the insulating
layer fabricated in it and what are the parameters that control the thickness of this layer?
(ii) Classify magnetic materials’ and calculate the saturation magnetization and the saturation
flux density for nickel.
Given : Density of nickel = 8.90 g/cm3
Atomic weight of nickel = 58.71 g/mol
Net magnetic moment per atom for nickel = 0.60 Bohr magneton
Bohr magneton = 9.27 × 10–27 A-m2
Avogadro’s number = 6.023 × 1023 g/mol
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SECTION B
5. (a) The open loop gain of the amplifier shown in the figure below has break frequency at f P1 = 100
kHz, f P2 = 1 MHz and f P3 = 10 MHz. The low frequency gain is A0 = 20 A/A and the emitter
resistance RE = 500  . Determine the value of compensating capacitor CF and resistance RF to
give (i) low frequency closed loop gain of Af = 20 A/A and cancel the pole f p1 = 100 kHz, and
(ii) to add pole of fp = 10 Mhz and cance the pole f p1 = 100 kHz.

(b) Determine the Z-parameters for the two-port network shown and check for its symmetry and
reciprocity.

(c) What is superconductivity? How are the superconducting material classified? Give the
applications of high temperature superconductors, in brief.
(d) How is the temperature compensation achieved in the measurement of strain?
The unstrained resistance of each of the four elements of the unbonded strain gauge is 120  .
The strain gauge has a gauge factor of 3 and is subjected to a strain of 10 –4. If the detector is a
high impedance voltmeter, calculate the reading of this voltmeter for a battery voltage of 10 V.
Assume the bridge arms A and D are under tension whereas arms B and C are under
compression.
(e) In the circuit shown in figure, Z1 = 60/–30º  and Z2 = 40/45º  . Calculate the total (i)
apparent power, (ii) real power, (iii) reactive power, and (iv) P.f.
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6. (a) (i) In a CRT, the anode of cathode voltage is 2 kV. The parallel deflector plates are 1.5 cm
long and spaced 5 mm apart. The screen is 50 cm from the centre of the deflection plates.
Find the beam speed and deflection sensitivity of the tube. Mass of electron = 9.109 × 10–31
kg, Charge on electron = 1.602 × 10–19c.
(ii) The coil of a moving iron voltmeter has a resistance of 500  and an inductance of 1.0 H.
The series resistor is 2 k  . When 250 V de is applied, the voltmeter reads 250 V. Find the
reading when an ac voltage of 250 V, 50 Hz is applied. What is the per cent error? What
capacitance must be connected in parallel with the series resistor to remove this error?
(b) (i) An ac bridge has the following constants:
arm AB, R = 1 k  in parallel with C = 0·159  F;
arm BC, R = 1 k  ; arm CD, R = 500  ; arm DA, C = 0·636  F in series with an
unknown resistor. Find the frequency for which the bridge is in balance and determine the
value of resistance in arm DA to produce this balance.
(ii) A dynamometer type wattmeter connected normally to read power in a single phase circuit
indicates the value P1. A second reading P2 is obtained when a capacitor of reactance equal
to the pressure coil resistance is connected in series with pressure coil. Show that the phase
2P
angle of the load can be obtained from the expression : tan   1  2
P1
(c) Design a counter with the irregular binary count sequence shown in the state diagram of the
following figure. Use J-K flip-flops

7. (a) (i) For the circuit shown, obtain the state equations for R1 = R2 = R
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(ii) A two-element series circuit is connected across an ac source given by e(t) = 200 2 sin
( 314t  20º ). The current in the circuit is found to be i(t) = 10 2 cos (314t  25º ) .
Determine the parameters of the circuit.
(b) (i) A chromel-constant thermocouple has its cold junction at 0ºC. The characteristics of the
thermocouple is:
Temp. ºC 0 10 20 30 40 50
Emf mV 0 0.593 1.191 1.8 2.415 3.02
Find the temperature of the hot junction if the thermoelectric emf is 2.95 mV.
(ii) A thermometer, initially at 70ºC, is suddenly dipped in a liquid at 300ºC. After 3 second,
the thermometer indicates 200ºC. After what time is the thermometer expected to give a
reliable reading, say well within 1% of the actual value?
(c) Find the load voltage as a function of time for the circuit shown in the figure. Assume no
energy is stored in the capacitor and inductor before the switch closes. Circuit parameters: R =
10, C  10F, L  5 mH

8. (a) (i) Design a sawtooth waveform generator shown in the figure below, so that f0 = 4 kHz,
threshold voltage VTH = 5 V and the circuit has a duty cycle of 0.25. Assume Vsat = |–Vsat| = 14
V, and R1 = 10k and C  0.01F
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(ii) Design a square wave generator as shown in the figure below, so that duty cycle is 50%
and f0 = 2.5 kHz. Assume VCC = 12 V and C = 0.1 F .

(b) (i) For a second order low pass filter as shown in the figure below, to give a high cutoff
frequency of fH = f0 = 1 kHz, a pass band gain K = 4, Q = 0.707 and C = 0.01 F .
Calculate resistances R, RF and R5.

(ii) An LC tuned MOS oscillator is shown in the figure below. Find the value of oscillation
frequency and n for L = 112.6 H and C = 0.01 F . The parameters of the MOSFET are
gm = 5 mA/V, rd = 25 k and RG = 10 k .
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(c) Draw a 16 × 8-bit ROM array, showing all the inputs and outputs. List the types of read-only
memories and explain the differences.

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