16NF25
16NF25
STF16NF25 - STP16NF25
N-channel 250V - 0.195Ω - 13A - DPAK/TO-220/TO-220FP
Low gate charge STripFET™ II Power MOSFET
Features
RDS(on)
Type VDSS ID Pw
Max
3
STD16NF25 250V <0.235Ω 13A 90W 1
3
13A(1)
2
STF16NF25 250V <0.235Ω 25W 1
DPAK
STP16NF25 250V <0.235Ω 13A 90W TO-220
1. Limited only by maximum temperature allowed
Application
■ Switching applications Figure 1. Internal schematic diagram
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STD16NF25 - STF16NF25 - STP16NF25 Electrical ratings
1 Electrical ratings
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Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25
2 Electrical characteristics
Drain-source
V(BR)DSS ID = 1mA, VGS =0 250 V
breakdown voltage
VDS = max ratings
Zero gate voltage 1 µA
IDSS VDS = max ratings,
drain current (VGS = 0) 10 µA
TC = 125°C
Gate-body leakage
IGSS VGS = ± 20V ±100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
Static drain-source on
RDS(on) VGS = 10V, ID = 6.5A 0.195 0.235 Ω
resistance
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
gfs (1) VDS = 15V, ID = 6.5A 10 S
transconductance
Input capacitance
Ciss 680 pF
Output capacitance VDS = 25V, f = 1MHz,
Coss 125 pF
Reverse transfer VGS = 0
Crss 20 pF
capacitance
Equivalent output VDS = 0V to 200V,
Coss eq.(2) 48 pF
capacitance VGS = 0
RG Intrinsic gate resistance f=1MHz, open drain 2.1 Ω
td(on) Turn-on delay time 9 ns
VDD = 125V, ID = 6.5A
tr Rise time 17 ns
RG = 4.7Ω VGS = 10V
td(off) Turn-off delay time 35 ns
(see Figure 18)
tf Fall time 17 ns
Qg Total gate charge VDD = 200V, ID = 6.5A, 18 nC
Qgs Gate-source charge VGS = 10V 3 nC
Qgd Gate-drain charge (see Figure 19) 8 nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
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STD16NF25 - STF16NF25 - STP16NF25 Electrical characteristics
Source-drain current
ISD 13 A
Source-drain current
ISDM (1) 52 A
(pulsed)
VSD (2) Forward on voltage ISD = 13A, VGS = 0 1.6 V
ISD = 13A,
trr Reverse recovery time 133 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 651 µC
VDD = 60V
IRRM Reverse recovery current 10 A
(see Figure 20)
ISD = 13A,
trr Reverse recovery time 157 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 895 µC
VDD = 60V, Tj = 150°C
IRRM Reverse recovery current 11 A
(see Figure 20)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK Figure 7. Thermal impedance for DPAK
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STD16NF25 - STF16NF25 - STP16NF25 Electrical characteristics
Figure 10. Normalized BVDSS vs temperature Figure 11. Static-drain source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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Electrical characteristics STD16NF25 - STF16NF25 - STP16NF25
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature
Figure 16. Source-drain diode forward Figure 17. Maximum avalanche energy vs
characteristics starting Tj
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STD16NF25 - STF16NF25 - STP16NF25 Test circuit
3 Test circuit
Figure 18. Switching times test circuit for Figure 19. Gate charge test circuit
resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test
switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
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Package mechanical data STD16NF25 - STF16NF25 - STP16NF25
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STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
0068772-F
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Package mechanical data STD16NF25 - STF16NF25 - STP16NF25
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
E
A
D
B
L3
L6
L7
F1
G1
G
H
F2
1 2 3
L5
L2 L4
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STD16NF25 - STF16NF25 - STP16NF25 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
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Packaging mechanical data STD16NF25 - STF16NF25 - STP16NF25
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STD16NF25 - STF16NF25 - STP16NF25 Revision history
6 Revision history
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STD16NF25 - STF16NF25 - STP16NF25
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