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MCR72 MotorolaInc

The document provides technical data for Reverse Blocking Triode Thyristors designed for various industrial and consumer applications. It includes specifications such as maximum ratings, thermal characteristics, and electrical characteristics, along with package dimensions. Additionally, it outlines the operational parameters and conditions for the devices, emphasizing their suitability for specific applications.

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Karan Jejurkar
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0% found this document useful (0 votes)
5 views4 pages

MCR72 MotorolaInc

The document provides technical data for Reverse Blocking Triode Thyristors designed for various industrial and consumer applications. It includes specifications such as maximum ratings, thermal characteristics, and electrical characteristics, along with package dimensions. Additionally, it outlines the operational parameters and conditions for the devices, emphasizing their suitability for specific applications.

Uploaded by

Karan Jejurkar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR TECHNICAL DATA by MCR72/D

      


Reverse Blocking Triode Thyristors

. . . designed for industrial and consumer applications such as temperature, light and
speed control; process and remote controls; warning systems; capacitive discharge
circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density SCRs
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and 8 AMPERES RMS
Stability 50 thru 800 VOLTS
• Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits

G
A C

CASE 221A-04
(TO-220AB)
STYLE 3

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)


Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1) VDRM Volts
(TJ = – 40 to 110°C, or
1/2 Sine Wave, RGK = 1kΩ) VRRM
MCR72-2 50
MCR72-3 100
MCR72-4 200
MCR72-6 400
MCR72-8 600
MCR72-10 800
On-State RMS Current (TC = 83°C) IT(RMS) 8 Amps
Peak Non-repetitive Surge Current ITSM 100 Amps
(1/2 Cycle, 60 Hz, TJ = –40 to 110°C)
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
p 10 µs)
Peak Gate Voltage (t VGM ±5 Volts
p 10 µs)
Peak Gate Current (t IGM 1 Amp
Peak Gate Power (t p 10 µs) PGM 5 Watts
Average Gate Power PG(AV) 0.75 Watts
Operating Junction Temperature Range TJ –40 to +110 °C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; (cont.)
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data 1


 Motorola, Inc. 1995
  
MAXIMUM RATINGS — continued
Rating Symbol Value Unit
Storage Temperature Range Tstg –40 to + 150 °C
Mounting Torque — 8 in. lb.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Forward or Reverse Blocking Current(1) IDRM, IRRM
(VAK = Rated VDRM or VRRM) TJ = 25°C — — 10 µA
TJ = 110°C — — 500 µA
On-State Voltage VTM — 1.7 2 Volts
(ITM = 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)(2) IGT — 30 200 µA
(VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 V, RL = 100 Ω) — 0.5 1.5
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C) 0.1 — —
Holding Current IH — — 6 mA
(VD = 12 V, ITM = 100 mA)
Critical Rate-of-Rise of Forward Blocking Voltage dv/dt — 10 — V/µs
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)
Gate Controlled Turn-On Time tgt — 1 — µs
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)
1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RGK current.

FIGURE 1 – AVERAGE CURRENT DERATING FIGURE 2 – ON-STATE POWER DISSIPATION


PAV , AVERAGE POWER DISSIPATION (WATTS)

110 16
TC , MAXIMUM CASE TEMPERATURE (° C)

dc
100 12
α α 180°
α = Conduction Angle α = Conduction Angle
α = 30° 90°
90 8.0
60° α = 30° 60°
90°

180°
80 4.0
dc

70 0
0 2.0 4.0 6.0 8.0 0 2.0 4.0 6.0 8.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT (AMP)

2 Motorola Thyristor Device Data


  
FIGURE 3 – NORMALIZED GATE CURRENT FIGURE 4 – GATE VOLTAGE

3.0

VGT , GATE TRIGGER VOLTAGE (VOLTS)


0.7
NORMALIZED GATE CURRENT

2.0
VD = 12 Vdc 0.6
VD = 12 Vdc
0.5
1.0 0.4

0.3

0.2
0.5
0.1
0.3
–40 –20 0 20 40 60 80 90 100 120 140 –60 –40 –20 0 20 40 60 80 100 120
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Motorola Thyristor Device Data 3


  
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4 A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
STYLE 3: C 0.160 0.190 4.07 4.82
1 2 3 PIN 1. CATHODE
U 2. ANODE
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
H 3. GATE
G 0.095 0.105 2.42 2.66
4. ANODE
H 0.110 0.155 2.80 3.93
K J 0.014 0.022 0.36 0.55
Z K 0.500 0.562 12.70 14.27
L 0.045 0.055 1.15 1.39
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
N

CASE 221A-04
(TO–220AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:


USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

4 Motorola Thyristor Device Data

*MCR72/D*
◊ MCR72/D

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