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Course Plan EEE 4409 OBE

The document outlines the course EEE 4409: Semiconductor Physics at the Islamic University of Technology, detailing the course structure, objectives, content, assessment methods, and grading policy. It covers fundamental concepts of semiconductor physics, including energy bands, carrier statistics, PN junctions, transistors, and optoelectronic devices. The course aims to equip students with the knowledge and skills necessary for understanding and modeling semiconductor devices, with assessments including quizzes, midterm, and final exams.

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0% found this document useful (0 votes)
7 views5 pages

Course Plan EEE 4409 OBE

The document outlines the course EEE 4409: Semiconductor Physics at the Islamic University of Technology, detailing the course structure, objectives, content, assessment methods, and grading policy. It covers fundamental concepts of semiconductor physics, including energy bands, carrier statistics, PN junctions, transistors, and optoelectronic devices. The course aims to equip students with the knowledge and skills necessary for understanding and modeling semiconductor devices, with assessments including quizzes, midterm, and final exams.

Uploaded by

Saquib
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 5

ISLAMIC UNIVERSITY OF TECHNOLOGY

Department of Electrical and Electronic Engineering

Course Outline and Course Plan


EEE 4409: Semiconductor Physics

Name of the
Teacher Dr. Syed Iftekhar Ali Position Professor
Department EEE Programme B.Sc. Engg. (EE)
Course Code EEE 4409 Course Title Semiconductor Physics
Academic Year 2022-23 Semester Summer
Contact Hours 3 Credit Hours 3.00
Text books and 1. Solid State Electronic Devices 7th Edition 1. Ben G. Streetman and Sanjay
Authors of the Kumar Banerjee
Reference 2. Semiconductor Physics and Devices Basic books 2. Donald A. Neamen
books Principles 4th Edition
Prerequisites
(If any) EEE 4303 (Electronics II)
Course None
Homepage
Teaching √ Lecture Group discussion Demonstration √ Problem solving
Methods/
Approaches Project Others:
Teaching aids Multi-media OHP
√ Board and Marker Others

Course Assessment Method


Attendance Mid
Semester Final
(10% of Quiz 15% of Total Marks (Best 3 out of 4) Semester
(50%)
Total Marks) (25%)
Based on the 1st Quiz 2nd Quiz 3rd Quiz 4th Quiz Others
Week/Date Week/Date
class Week/Date Week/Date Week/Date Week/Date Assignment Homework
participation 4th week 7th week 11th week 14h week None None 8th week 15th week

Course Contents
Energy bands in semiconductor, Carrier statistics and Fermi level, carrier concentrations at equilibrium, temperature
dependence of carrier concentrations, conductivity and mobility, effects of temperature and doping on mobility, high
field effect, Hall effect, invariance of Fermi level. Carrier lifetime, direct and indirect recombination, quasi-Fermi level,
photoconductive devices, Drift and diffusion of carriers, continuity and diffusion equations.

PN junction contact potential, equilibrium Fermi level, space charge, forward and reverse bias, carrier injection, minority
and majority carrier currents, avalanche and zener breakdown, time variation of stored charge, reverse recovery
transient and capacitance. Metal-semiconductor junctions: Schottky barriers, rectifying and ohmic contacts.

Bipolar Junction Transistor: Basic principle of pnp and npn transistors, emitter efficiency, base transport factor and
current gain, diffusion equation in the base, terminal currents, coupled-diode model and charge control analysis.

MOSFET: capacitance, energy band diagrams and flat band voltage, threshold voltage analysis and control, static C-V
characteristics, MOSFET operation, I-V relationship and body effect.

Optoelectronic devices: Photo diodes. Light Emitting Diodes: Visible and infrared LED, principle, material. Semiconductor
Laser.

Course Objectives
1. To familiarize students with basic concepts and terminologies of semiconductor device physics.
2. To familiarize students with the working of different semiconductor devices.
3. To familiarize students to the process of mathematical modeling of semiconductor devices with examples.
4. To illustrate how physical measurable quantities related to different semiconductor devices can be obtained using the
developed models.
5. To give the students idea about design considerations of some semiconductor devices.

Page 1 of 5
Course Outcomes
Domain and
Delivery
Corresponding Level of Assessment
COs CO Statement Methods and
PO Learning Tools
Activities
Taxonomy
Define the basic terminologies and understand
the distribution, behavior and transport of both Quizzes, Mid
Cognitive Level
equilibrium and excess carriers in Semester
PO1: Engineering 1&2 Lecture,
CO1 semiconductor materials. Also, derive basic Exam,
Knowledge (Define & Discussion
mathematical equations to represent the Semester Final
Understand)
distribution, behavior and transport of carriers Exam
in semiconductor.
Understand the construction and working Cognitive Level Quizzes, Mid
principles of PN and metal-semiconductor 2, 4 & 5 Semester
PO2: Problem Lecture,
CO2 junctions and construct appropriate (Understand, Exam,
Analysis Discussion
mathematical models using the basic equations Analyse & Semester Final
of CO1 to analyze and solve related problems. Evaluate ) Exam
Understand the construction and working Cognitive Level
principles of transistors (BJT and MOSFET) 2, 4 & 5 Quizzes,
PO2: Problem Lecture,
CO3 and construct appropriate mathematical models (Understand, Semester Final
Analysis Discussion
using the basic equations of CO1 to analyze and Analyse & Exam
solve related problems. Evaluate )
Understand the construction, working Cognitive Level
Quizzes,
principles and design issues of optoelectronic PO2: Problem 2&4 Lecture,
CO4 Semester Final
devices such as photodetector, solar cell, LED Analysis (Understand & Discussion
Exam
and LASER. Analyse )

Mapping between COs and POs


Program Outcomes (POs)
Course Outcome (CO)
1 2 3 4 5 6 7 8 9 10 11 12
CO1: Define the basic terminologies and understand the
distribution, behavior and transport of both equilibrium
and excess carriers in semiconductor materials. Also, √
derive basic mathematical equations to represent the
distribution, behavior and transport of carriers in
semiconductor. (C1, C2)
CO2: Understand the construction and working principles
of PN and metal-semiconductor junctions and construct
appropriate mathematical models using the basic √
equations of CO1 to analyze and solve related problems.
(C2, C4, C5)
CO3 Understand the construction and working principles
of transistors (BJT and MOSFET) and construct
appropriate mathematical models using the basic √
equations of CO1 to analyze and solve related problems.
(C2, C4, C5)
CO4: Understand the construction, working principles and
design issues of optoelectronic devices such as √
photodetector, solar cell, LED and LASER. (C2, C4)

Tentative Weekly Plan for Course Content and Mapping with CO


Weeks* Topics COs

1 Introduction CO1

Energy bands in semiconductor, Carrier statistics and Fermi level, carrier concentrations
2 CO1
at equilibrium, temperature dependence of carrier concentrations
Conductivity and mobility, effects of temperature and doping on mobility, high field
3 CO1
effect, Hall effect, invariance of Fermi level
Carrier lifetime, direct and indirect recombination, quasi-Fermi level,
4 CO1
photoconductive devices

5 Drift and diffusion of carriers, continuity and diffusion equations. CO1

Page 2 of 5
PN junction: contact potential, equilibrium Fermi level, space charge, forward and
6 CO2
reverse bias, carrier injection
PN junction continued - minority and majority carrier currents, avalanche and Zener
7 CO2
breakdown, time variation of stored charge, reverse recovery transient.
Mid Semester Examination
PN junction continued - capacitance.
8 CO2
Metal-semiconductor junctions: Schottky barriers, rectifying and ohmic contacts
Bipolar Junction Transistor: basic principle of pnp and npn transistors, emitter efficiency,
9 CO3
base transport factor and current gain
Bipolar Junction Transistor continued - diffusion equation in the base, terminal currents,
10 CO3
coupled-diode model and charge control analysis.
11 MOSFET: capacitance, energy band diagrams and flat band voltage CO3
12 MOSFET continued - threshold voltage analysis and control, static C-V characteristics CO3
13 MOSFET operation, I-V relationship and body effect. CO3
Optoelectronic devices: Photo diodes. Light Emitting Diodes: Visible and infrared LED,
14 CO4
principle, material. Semiconductor Laser.
*Only number of weeks of effective classes. Mid semester and semester final examinations are not included.

Mapping of Course Outcomes (COs) and Program Outcomes (POs) and Evaluation Methods
Mark distributions (as %) on COs and POs
Assessment Method Marks CO1 CO2 CO3 CO4
PO1 PO2 PO2 PO2
Quiz 1, Quiz 2, Quiz 3, Quiz 4 (best 3 out of 4) 15% 5% 5% 5% 5%
Attendance (Class Participation) 10% - - - -
Midterm Exam. 25% 15% 10% - -
Final Exam. 50% 5% 10% 20% 15%
Total 100% 25% 25% 25% 20%

Program Outcomes (POs)


PO No. Upon graduation, from the Bachelor of Science in Electrical and Electronic Engineering program, the
students are expected to have the ability to:

Engineering knowledge: Apply knowledge of mathematics, natural science, engineering fundamentals and an
PO1
engineering specialization to the solution of complex electrical and electronic engineering problems.
Problem analysis: Identify, formulate, research literature and analyse complex electrical and electronic engineering
PO2 problems reaching substantiated conclusions using first principles of mathematics, natural sciences and engineering
sciences.
Design/development of solutions: Design solutions for complex electrical and electronic engineering problems and
PO3 design systems, components or processes that meet specified needs with appropriate consideration for public health
and safety, cultural, societal, and environmental considerations.
Investigation: Conduct investigations of complex electrical and electronic engineering problems using research-based
PO4 knowledge and research methods including design of experiments, analysis and interpretation of data, and synthesis
of information to provide valid conclusions.
Modern tool usage: Create, select and apply appropriate techniques, resources, and modern engineering and IT tools,
PO5 including prediction and modelling, to complex electrical and electronic engineering problems, with an understanding
of the limitations.
The engineer and society: Apply reasoning informed by contextual knowledge to assess societal, health, safety, legal
PO6 and cultural issues and the consequent responsibilities relevant to professional engineering practice and solutions to
complex electrical and electronic engineering problems.
Environment and sustainability: Understand and evaluate the sustainability and impact of professional engineering
PO7
work in the solution of complex electrical and electronic engineering problems in societal and environmental contexts.
Ethics: Apply ethical principles embedded with religious values, professional ethics and responsibilities, and norms
PO8
of electrical and electronic engineering practice.
Individual work and teamwork: Function effectively as an individual, and as a member or leader in diverse teams
PO9
and in multi-disciplinary settings.
Communication: Communicate effectively on complex engineering activities with the engineering community and
PO10 with society at large, such as being able to comprehend and write effective reports and design documentation, make
effective presentations, and give and receive clear instructions.
Project management and finance: Demonstrate knowledge and understanding of engineering management principles
PO11 and economic decision-making and apply these to one’s own work, as a member and leader in a team, to manage
projects and in multidisciplinary environments.
Life-long learning: Recognize the need for, and have the preparation and ability to engage in independent and life-
PO12
long learning in the context of electrical and electronic engineering related technological change.

Page 3 of 5
K Table: Knowledge Profile
Attribute
K1 A systematic, theory-based understanding of the natural sciences applicable to the discipline
K2 Conceptually based mathematics, numerical analysis, statistics and the formal aspects of computer and information
science to support analysis and modeling applicable to the discipline
K3 A systematic, theory-based formulation of engineering fundamentals required in the engineering discipline
K4 Engineering specialist knowledge that provides theoretical frameworks and bodies of knowledge for the accepted
practice areas in the engineering discipline; much is at the forefront of the discipline
K5 Knowledge that supports engineering design in a practice area
K6 Knowledge of engineering practice (technology) in the practice areas in the engineering discipline
K7 Comprehension of the role of engineering in society and identified issues in engineering practice in the discipline: ethics
and the engineer’s professional responsibility to public safety; the impacts of engineering activity; economic, social,
cultural, environmental and sustainability
K8 Engagement with selected knowledge in the research literature of the discipline

P Table: Range of Complex Engineering Problem Solving

Attribute Complex Engineering Problems have characteristic P1 and some or all of P2 to P7:
Depth of knowledge P1: Cannot be resolved without in-depth engineering knowledge at the level of one or more of K3,
required K4, K5, K6 or K8 which allows a fundamentals-based, first principles analytical approach
Range of conflicting P2: Involve wide-ranging or conflicting technical, engineering and other issues
requirements
Depth of analysis required P3: Have no obvious solution and require abstract thinking, originality in analysis to formulate
suitable models
Familiarity of issues P4: Involve infrequently encountered issues
Extent of applicable codes P5: Are outside problems encompassed by standards and codes of practice for professional
engineering
Extent of stakeholder P6: Involve diverse groups of stakeholders with widely varying needs
involvement and conflicting
requirements
Interdependence P7: Are high level problems including many component parts or sub-problems

A Table: Range of Complex Engineering Activities

Attribute Complex activities means (engineering) activities or projects that have some or all of the
following characteristics:
Range of resources A1: Involve the use of diverse resources (and for this purpose resources include people, money,
equipment, materials, information and technologies)
Level of interaction A2: Require resolution of significant problems arising from interactions between wide-ranging or
conflicting technical, engineering or other issues
Innovation A3: Involve creative use of engineering principles and research-based knowledge in novel ways
Consequences for society A4: Have significant consequences in a range of contexts, characterized by difficulty of prediction
and the environment and mitigation
Familiarity A5: Can extend beyond previous experiences by applying principles-based approaches

Grading Policy
Numeric Grade Letter Grade Grade Point
80% and above A+ 4.00
75% to less than 80% A 3.75
70% to less than 75% A- 3.50
65% to less than 70% B+ 3.25
60% to less than 65% B 3.00
55% to less than 60% B- 2.75
50% to less than 55% C+ 2.50

Page 4 of 5
45% to less than 50% C 2.25
40% to less than 45% D 2.00
Less than 40% F 0.00

Weekly Class Schedule and Consultation Hours


Sections Lecture 1 Lecture 2 Consultation Hour
Section A Monday: 11:45am – 1:00 pm Thursday: 2:30 pm – 3:45 pm Friday: 10:00 am – 1:00 pm
Section B Monday: 2:30 pm – 3:45 pm Thursday: 11:45am – 1:00 pm Friday: 10:00 am – 1:00 pm
Section C Monday: 10:30 am – 11:45 am Thursday: 10:30 am – 11:45 am Friday: 10:00 am – 1:00 pm

Instructor contact details:


Prof. Dr. Syed Iftekhar Ali
Room No. 204
Academic Building 1
Electrical and Electronic Engineering Department
Islamic University of Technology (IUT)
Board Bazar, Gazipur-1704, Bangladesh.
Office Phone: +8802 99669 1254-59 (Ext. 3273)
E-mail: eee.s_ali@iut-dhaka.edu

Page 5 of 5

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