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Mo CVD Material Growth

The document discusses MOCVD (Metal Organic Chemical Vapor Deposition) technology for growing semiconductor materials like GaN. It covers the basic components of an MOCVD system including the reactor, gas handling system, and exhaust treatment. Common metalorganic precursors used are described along with typical growth procedures and reactions. Characterization techniques for analyzing MOCVD grown materials are also listed such as XRD, TEM, and photoluminescence. Specific issues for growing high quality GaN by MOCVD are noted like the lack of native substrates and difficulty achieving p-type conductivity.

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Tuan Anh Nguyen
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114 views19 pages

Mo CVD Material Growth

The document discusses MOCVD (Metal Organic Chemical Vapor Deposition) technology for growing semiconductor materials like GaN. It covers the basic components of an MOCVD system including the reactor, gas handling system, and exhaust treatment. Common metalorganic precursors used are described along with typical growth procedures and reactions. Characterization techniques for analyzing MOCVD grown materials are also listed such as XRD, TEM, and photoluminescence. Specific issues for growing high quality GaN by MOCVD are noted like the lack of native substrates and difficulty achieving p-type conductivity.

Uploaded by

Tuan Anh Nguyen
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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MOCVD technology and material growth

1.Introduction 2.The MOVD technique and growth system 3.Metalorganic compound 4.Gas phase and surface reaction 5.Materials Characterization 6.MOCVD growth of GaN

1.Introduction
Most of the advances in semiconductor processing have centered on the ability to decrease the physical dimensions of the electronic device structure. Lateral dimension: Photolithographic, Deposition Etching techniques Vertical dimension: Epitaxial deposition

Compare of epitaxial methods


Growth method LPE (Liquid phase epitaxy) VPE (Vapor phase epitaxy MBE (Molecular Beam Epitaxy) time 1963 features limit Growth form Limited substrate areas supersaturated and poor control over the solution onto substrate growth of very thin layers Use metal halide as transport agents to grow Deposit epilayer at ultrahigh vacuum No Al contained compound, thick layer Hard to grow materials with high vapor pressure

1958

1958 1967

MOCVD (Metal-Organic Chemical Vapor Deposition)

1968

Use metalorganic compounds as the sources

Some of the sources like AsH3 are very toxic.

Some about the name of MOCVD


In the reference, MOCVD also have some other names. Different people prefer different name. All the names refer to the same growth method. MOCVD (Metalorganic chemical vapor deposition) OMCVD(Organometallic CVD) MOVPE (MO vapor phase epitaxy) OMVPE AP-MOCVD (Atmosphere MOCVD) LP-MOCVD (Low pressure MOCVD)

2. The MOVD growth system

MOCVD Growth System

Reactor Gas handle system

Computer Control

Vacuum and Exhaust system

Gas handling system


The function of gas handling system is mixing and metering of the gas that will enter the reactor. Timing and composition of the gas entering the reactor will determine the epilayer structure. Leak-tight of the gas panel is essential, because the oxygen contamination will degrade the growing films properties. Fast switch of valve system is very important for thin film and abrupt interface structure growth, Accurate control of flow rate, pressure and temperature can ensure the stable and repeat.

Reactor-1

Reactor-2

Aixtron Model-2400 reactor

Exhaust system
Pump and pressure controller

For low pressure growth, we use mechanic pump and pressure controller to control the growth pressure. The pump should be designed to handle large gas load.
waste gas treatment system The treatment of exhaust gas is a matter of safety concern. The MOCVD system for GaAs and InP use toxic materials like AsH3 and PH3. The exhaust gases still contain some not reacted AsH3 and PH3, Normally, the toxic gas need to be removed by using chemical scrubber.

For GaN system, it is not a problem.

3. Metalorganic compound
The vapor pressure of the MO source is an important consideration in MOCVD, since it determines the concentration of source material in the reactor and the deposition rate. Too low a vapor pressure makes it difficult to transport the source into the deposition zone and to achieve reasonable growth rates. Too high a vapor pressure may raise safety concerns if the compound is toxic. Further more, it is easier to control the delivery from a liquid than from a solid. Vapor pressures of Metalorganic compounds are calculated in terms of the expression Log[p(torr)]=B-A/T

Vapor pressure of most common MO compounds


Compound (Al(CH3)3)2 Al(C2H5)3 Ga(CH3)3 Ga(C2H5)3 In(CH3)3 In(C2H5)3 Zn(C2H5)2 Mg(C5H5)2 TMAl TEAl TMGa TEGa TMIn TEIn DEZn Cp2Mg P at 298 K (torr) 14.2 0.041 238 4.79 1.75 0.31 8.53 0.05 A 2780 3625 1825 2530 2830 2815 2190 3556 B 10.48 10.78 8.50 9.19 9.74 8.94 8.28 10.56
Melt point (oC)

15 -52.5 -15.8 -82.5 88 -32 -28 175

Log[p(torr)]=B-A/T

Calculate the mole flow rate of MO sources


When we read some reference, we often see people use mol/min to indicate the flow rate. Normally, we use the formula to calculate it.

F (mol/min)=p MO/p Bubbler*[flow rate (ml/min)]/22400 (mol/ml)


We need to calculate the mole flow rate before we determine the growth condition. If we want to grow alloys, we can use the mole flow rate to estimate the alloys composition. For example, if we grow AlGaN, we can estimate the Al concentration use the following formula if we assume the efficiency of Al and Ga sources is the same. x Al=F Al/(F Al+ F Ga)

4. Gas phase and surface reaction


The basic reaction describe GaN growth can simply write as Ga(CH3)3+NH3 GaN+3CH4

The growth procedure as follows:


1. 2. 3. MO sources and hydrides inject to the reactor. The sources are mixed inside the reactor and transfer to the deposition area At the deposition area, high temperature result in the decomposition of sources and other gas-phase reaction, forming the film precursors which are useful for film growth and by-products. The film precursors transport to the growth surface The film precursors absorb on the growth surface The film precursors diffuse to the growth site At the surface, film atoms incorporate into the growing film through surface reaction The by-products of the surface reactions absorb from surface The by-products transport to the main gas flow region away from the deposition area towards the reactor exit

4. 5. 6. 7. 8. 9.

reaction

5. Materials Characterization
Physical characterization X-ray diffraction (XDS) Transmission electron microscopy (TEM) Optical microscopy Scanning electron microscopy (SEM) Atom force microscopy (AFM) Secondary ion mass spectroscopy (SIMS) Electrical Measurements Van der Pauw Hall Capacitance-voltage (C-V) Optical measurements Photoluminescence (PL)

6. MOCVD grow GaN and related materials


TMGa NH3 1150oC Temperature
High temperature treatment

1050oC 550oC
Buffer layer Epilayer Growth

Ga(CH3)3+NH3

GaN+CH4

Two Step MOCVD Growth procedure

Some basic problem related to GaN growth


MOCVD and other epitaxial techniques have developed more than 30 years, but high quality GaN and related compound only available in recent years. There are some special problems for GaN and related materials. No suitable substrate

Difficult to obtain p-type epilayer

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