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Photolithography

The document describes the basic steps of the photolithography process, which includes photoresist coating, alignment and exposure, and development. It provides details on each step, such as how photoresist is applied by spin coating and the purpose of steps like soft baking. The document also discusses negative and positive photoresists and their differences in how exposed and unexposed areas are developed.

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Dhanesh Murali
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278 views42 pages

Photolithography

The document describes the basic steps of the photolithography process, which includes photoresist coating, alignment and exposure, and development. It provides details on each step, such as how photoresist is applied by spin coating and the purpose of steps like soft baking. The document also discusses negative and positive photoresists and their differences in how exposed and unexposed areas are developed.

Uploaded by

Dhanesh Murali
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Photolithography Process

Applications of Photolithography
Main application: IC patterning process Other applications: Printed electronic board, nameplate, printer plate, and et al.

Basic Steps of Photolithography


Photoresist coating Alignment and exposure Development

Basic Steps - Advanced Technology


Track stepper integrated system Wafer clean Pre-bake and primer coating PR coating Photoresist spin coating Soft bake Alignment and exposure Post exposure bake Development Development Hard bake Pattern inspection

Figure 6.5
Previous Process

Clean

Surface preparation Hard bake

PR coating Development
Track system

Soft bake PEB

Alignment & Exposure

Photo cell
Strip PR Rejected Inspection Photo Bay

Approved
Etch Ion Implan t

Wafer Clean
Remove contaminants Remove particulate Reduce pinholes and other defects Improve photoresist adhesion Basic steps
Chemical clean Rinse Dry

Photoresist Coating
Primer

Photoresist
Polysilicon

STI
P-Well

USG

Spin Coating
Wafer sit on a vacuum chuck Slow spin ~ 500 rpm Liquid photoresist applied at center of wafer Ramp up to ~ 3000 - 7000 rpm Photoresist spread by centrifugal force Evenly coat on wafer surface

Photoresist Spin Coater


Wafer PR

EBR

Water Sleeve
Chuck Drain Vacuum Exhaust

Photoresist Applying
PR dispenser nozzle Wafer

Chuck Spindle To vacuum pump

Photoresist Suck Back


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Photoresist Spin Coating


PR dispenser nozzle PR suck back Wafer

Chuck Spindle To vacuum pump

Edge Bead Removal

Solvent

Wafer

Chuck Spindle To vacuum pump

Edge Bead Removal

Solvent

Wafer

Chuck Spindle To vacuum pump

Optical Edge Bead Removal Exposure


Light source Light beam Photoresist Wafer

Exposed Photoresist

Chuck Spindle

Optical Edge Bead Removal


After alignment and exposure Wafer edge expose (WEE) Exposed photoresist at edge dissolves during development

Ready For Soft Bake

Wafer

Chuck Spindle To vacuum pump

Purpose of Soft Bake


Evaporating most of solvents in PR Solvents help to make a thin PR but absorb radiation and affect adhesion Soft baking time and temperature are determined by the matrix evaluations Over bake: polymerized, less photo-sensitivity Under bake: affect adhesion and exposure

Alignment
Gate Mask

Photoresist
Polysilicon

STI
P-Well

USG

Exposure
Gate Mask

Photoresist
Polysilicon

STI
P-Well

USG

Ready for Post Exposure Bake

Photoresist
Polysilicon

STI
P-Well

USG

Alignment and Exposure


Most critical process for IC fabrication Most expensive tool (stepper) in an IC fab. Most challenging technology Determines the minimum feature size Currently 0.18 mm and pushing to 0.13 mm

Development
Developer solvent dissolves the softened part of photoresist Transfer the pattern from mask or reticle to photoresist Three basic steps:
Development Rinse Dry

Development
Mask PR Film Substrate PR Coating PR PR Substrate Exposure PR Film

Film
Substrate Etching Substrate Development

Film

Development Profiles
PR Substrate PR Substrate

Normal Development

Incomplete Development

PR Substrate Under Development

PR Substrate Over Development

Developer Solution
+PR normally uses weak base solution The most commonly used one is the tetramethyl ammonium hydride, or TMAH ((CH3)4NOH).

Photoresist Flow
Over baking can causes too much PR flow, which affects photolithography resolution.
PR Substrate Normal Baking PR Substrate Over Baking

Types of Photoresist
Negative Photoresist
Becomes insoluble after exposure

Positive Photoresist
Becomes soluble after exposure

When developed, the unexposed parts dissolved. Cheaper

When developed, the exposed parts dissolved Better resolution

Negative and Positive Photoresists


Photoresist Substrate UV light Mask/reticle Photoresist Exposure

Substrate
Negative Photoresist Substrate Positive Photoresist Substrate After Development

Negative Photoresist
Mask Negative Photoresist

Expose

Development

Negative Resist
Most negative PR are polyisoprene type Exposed PR becomes cross-linked polymer Cross-linked polymer has higher chemical etch resistance. Unexposed part will be dissolved in development solution.

Positive Photoresist

Novolac resin polymer Acetate type solvents Sensitizer cross-linked within the resin Energy from the light dissociates the sensitizer and breaks down the cross-links Exposed part dissolve in developer solution Image the same that on the mask Higher resolution Commonly used in IC fabs

Positive Photoresists
Photoresist Substrate UV light Mask/reticle Photoresist Exposure

Substrate

Substrate Positive Photoresist Substrate

After Development

Disadvantages of Negative Photoresist

Polymer absorbs the development solvent Poor resolution due to PR swelling Environmental and safety issues due to the main solvents xylene.

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