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Sputtering

This presentation gives a brief idea about how different parameters affect the characteristics of thin film in a sputtering machine

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Hebin Roy
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177 views29 pages

Sputtering

This presentation gives a brief idea about how different parameters affect the characteristics of thin film in a sputtering machine

Uploaded by

Hebin Roy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Sputtering

Sheet Resistance

Linear 4 Point Probe – unit W/sq

Material Nov 2018 Dec 2018 ( SWRI) Jan 2019


Ti >999( Out of range) 544 9
Ni >999( Out of range) -11MW < 0 out of range < 0 out of range
Cu >999( Out of range)-18KW < 0 out of range < 0 out of range

?
Sputtering
Sputtering
Sputtering

Sputtering presents a
cosine deposition profile

https://moorfield.co.uk/knowledge-base/confocal-magnetron-sputtering/
Effects

1. Thickness Profile
2. Resistance
3. Grain Size
Parameters

1 2

4. Distance b/w
sample and target
5. Substrate Bias?
6. Temperature?
3
Parameters
Distance- 10cm Distance- 20cm Distance- 30cm
Ti Ni Ti Ni Ti Ni
Ar-13
Ar-5
Ar-20
Pressure 5mtorr
Pressure 10mtorr
Power 100W
Power 150W

1. Measure Sheet Resistance


2. Measure Thickness
3. Rate of Deposition
Improving one Parameter could affect another
Tools required
1. Sheet Resistance
• Sheet resistance meter- 4 point probe or Eddy current meter

2. Thickness
• Create pattern using Photolithography or use Tape,
• Clean with Acetone, IPA to clean and Ni gun to dry
• AFM or Profilometer or XRR
Tools required
1. Sheet Resistance
• Sheet resistance meter- 4 point probe or Eddy current meter

2. Thickness
• Create pattern using Photolithography or use Tape,
• Clean with Acetone, IPA to clean and Ni gun to dry
• AFM or Profilometer or XRR
• Disadv. of using tape: Requires large area scan
Substrate Uniformity
1. Magnetron to substrate orientation–
centered on their axis for optimal uniformity.
2. Magnetron Size – Target > substrate
3. Will rotation improve uniformity throughout?
Yes / no?
Substrate Uniformity
1. Magnetron to substrate orientation–
centered on their axis for optimal uniformity.
2. Magnetron Size – Target > substrate
3. Type of Geometry
Substrate Uniformity
• Type of Geometry
(a) magnetron and substrate axes
aligned;
(b) magnetron positioned confocal
to the substrate.
Substrate Uniformity
• Type of Geometry
(a) magnetron and substrate axes
aligned;
(b) magnetron positioned confocal
to the substrate.
Substrate Uniformity
1. Magnetron to substrate orientation–
centered on their axis for optimal uniformity.
2. Magnetron Size – Target > substrate
3. Type of geometry
4. Source to Substrate distance(Z)
• Cosine distribution
• Increase z - more uniform? T/F
• Increase z - Decrease Sputtering Rate ? T/F
1.Distance(z)
4. Source to Substrate distance
Increase (z) - more uniform, Decrease Sputtering Rate
1.Distance(z)
4. Source to Substrate distance
Increase (z) - more uniform, Decrease Sputtering Rate

- High z, High # of thermalizing


collisions
- Flatten out the cosine distribution
making the deposition more uniform

- Rate  1/ z2 *
1.Distance(z)
• Low z
Adv- Films may grow as monolayer, Denser film, better adhesion
Dis- Substrate melting, increased stress on film, film damage.

Improving one Parameter could affect another

• The angular distribution is cosine-like and depends on ion energy, the


target’s type and crystallography
• The deposition profile of materials deposited with DC, RF or magnetic
materials are all different
• So, working distance for each material is not same
Example

https://www.lesker.com/newweb/ped/rateuniformity.cfm
4.Power Applied

• Higher Power – Increase Deposition rate


• Beware of thermal conductivity, thermal
coefficient of expansion of target,
Mechanical strength
• # of defects
• Emission angle

• Have more guns, co sputter, higher rate


3. Pressure
• An optimum pressure exists for high deposition rates
– Higher pressure - more collisions and ions
– Lower pressure - less scattering.

• May improve Uniformity


Ar content
• Increase Argon amount
- More ions for bombardment
- More neutral ions for collision
AJA Test results

• Material- Si • Ar- 13 sccm • RF source


• 200 W • Pressure-3mTorr • D=30mm
Example-Ti

Base
Pressure

Jeyachandran, et.al Properties of titanium thin films deposited by dc magnetron sputtering


Example-Ti

Base Pressure
Pressure • More Rate
• Less Resistance

Jeyachandran, et.al Properties of titanium thin films deposited by dc magnetron sputtering


Example- Al

http://apps.mnc.umn.edu/pub/pdf/eq
uipment/dc-sputter_testing.pdf
What can we Sputter!
1. Ti
2. Cu
3. Ni
4. What else?
What can we Sputter!
1. Ti
And anything that can use the
2. Cu
combination of Ti, Ni, Cu and
3. Ni N2 /O2 gases
4. TiN
5. Titanium oxide
6. Copper Oxide
7. Copper(I) Nitride, Cu3N – optical devices, MTJ ?
Thank you !

UTSA Nanoelectronics Lab

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