Scribd
Upload
185 views6 pages

180nm Process Typical Parameter Values

This document discusses MOS parameters for modeling transistors in a 1.8um technology process. It contains information on typical values for modeling the saturation region of transistors as well as important SPICE parameters for modeling diodes in a 1.8um process. The document focuses on providing MOS parameters needed for accurate modeling of transistors in a 1.8um technology node.

Uploaded by

Ku Ble Yan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
185 views6 pages

180nm Process Typical Parameter Values

This document discusses MOS parameters for modeling transistors in a 1.8um technology process. It contains information on typical values for modeling the saturation region of transistors as well as important SPICE parameters for modeling diodes in a 1.8um process. The document focuses on providing MOS parameters needed for accurate modeling of transistors in a 1.8um technology node.

Uploaded by

Ku Ble Yan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 6

Small-Signal Model for Saturation Region

Typical Values for 1.8um Process


Important SPICE Parameters for Modeling
Diodes
MOS Parameters for a Typical 1.8um Technology
MOS Parameters for a Typical 1.8um Technology
MOS Parameters for a Typical 1.8um Technology

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy