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Bipolar Junction Transistors

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both holes and electrons as charge carriers. They come in two types, NPN and PNP, and contain an emitter, base, and collector. BJTs amplify current and are used for amplification and switching in applications such as radio frequency circuits.
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0% found this document useful (0 votes)
84 views38 pages

Bipolar Junction Transistors

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both holes and electrons as charge carriers. They come in two types, NPN and PNP, and contain an emitter, base, and collector. BJTs amplify current and are used for amplification and switching in applications such as radio frequency circuits.
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Bipolar Junction Transistors

Invented in 1948 by Bardeen, Brattain and Shockley


Contains three adjoining, alternately doped semiconductor
regions: Emitter (E), Base (B), and Collector (C)
The middle region, base, is very thin compared to the
diffusion length of minority carriers
Two kinds: npn and pnp

1
Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp

The terminals are labeled:


• E - Emitter
• B - Base
• C - Collector

npn

2
Definition of bjt
 A bipolar transistor is that which
is composed entirely of one type
of semiconductor, silicon.
Abbreviated BJT. Also known as
silicon homojunction.
A bipolar (junction) transistor (BJT) is a
three-terminal electronic device constructed
of doped semiconductor material and may be
used in amplifying or switching applications.
Bipolar transistors are so named because
their operation involves both electrons and
holes. Charge flow in a BJT is due to
bidirectional diffusion of charge carriers
across a junction between two regions of
different charge concentrations.
This mode of operation is contrasted with
unipolar transistors, such as field-effect
transistors, in which only one carrier type
is involved in charge flow due to drift. By
design, most of the BJT collector current
is due to the flow of charges injected
from a high-concentration emitter into the
base where there are minority carriers
that diffuse toward the collector, and so
BJTs are classified as minority-carrier
devices.
BJT in Active Mode

 Operation
 Forward bias of EBJ injects electrons from emitter into base
(small number of holes injected from base into emitter)
 Most electrons shoot through the base into the collector across
the reverse bias junction (think about band diagram)
 Some electrons recombine with majority carrier in (P-type) base
region
Circuit Configuration
Transistor Operation
With the external sources, VEE and VCC, connected as shown:

• The emitter-base junction is forward biased


• The base-collector junction is reverse biased

8
Currents in a Transistor

Emitter current is the sum of the collector and


base currents:

IE  IC  IB

The collector current is comprised of two


currents:
IC  IC  I CO
majority minority

9
Common-Base Configuration

The base is common to both input (emitter–base) and


output (collector–base) of the transistor.

10
The common-base (CB) transistor
configuration, which is also known as the
'grounded base' configuration, is shown in
Figure.  In this configuration, the terminal
common to both the input and the output
of the circuit is the base.
The input current and output voltage of the
common-base configuration, which are the
emitter current IE and the collector-base voltage
Vcb, respectively, are often considered as the
independent variables in this circuit. Its
dependent variables, on the other hand, are the
emitter-base voltage Veb (which is the input
voltage) and the collector current IC (which is the
output current).
In the common base
configuration, the input signal is
applied to the emitter, the output is
taken from the collector, and the
base is the element common to
both input and output
Since part of the emitter current
flows into the base and does not
appear as collector current,
collector current will always be less
than the emitter current that causes
it
Common-Base Amplifier

Input Characteristics

This curve shows the relationship


between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.

14
Common-Base Amplifier

Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).

15
Operating Regions

• Active – Operating range of the


amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.

16
Approximations

Emitter and collector currents:

I I
C E

Base-emitter voltage:

VBE  0.7 V (for Silicon)

17
Alpha (a)
The current gain in the common-base circuit is
calculated in a method similar to that of the common
emitter except that the input current is IE not IB and
the term ALPHA (a) is used in place of beta for gain
Alpha () is the ratio of IC to IE :
IC
αdc 
IE

Ideally: a = 1
In reality: a is between 0.9 and 0.998

Alpha () in the AC mode:


ΔI C
αac 
ΔI E

18
The input current flowing into
the emitter is quite large as its
the sum of both the base current
and collector current
respectively therefore, the
collector current output is less
than the emitter current input
resulting in a Current Gain for
this type of circuit of less than
"1“.
Transistor Amplification

Currents and Voltages: Voltage Gain:


V 200mV VL 50V
I E  Ii  i   10mA Av    250
Ri 20Ω Vi 200mV
I I
C E
I  I  10 mA
L i
V  I R  (10 ma )( 5 kΩ)  50 V
L L

20
Common–Emitter Configuration

The emitter is common to both input


(base-emitter) and output (collector-
emitter).

The input is on the base and the


output is on the collector.

21
Common-Emitter Characteristics

Collector Characteristics Base Characteristics

22
Common-Emitter Amplifier Currents
Ideal Currents

IE = IC + IB IC =  IE

Actual Currents

IC =  IE + ICBO where ICBO = minority collector current


ICBO is usually so small that it can be ignored, except in high
power transistors and in high temperature environments.

When IB = 0 A the transistor is in cutoff, but there is some minority


current flowing called ICEO.
I CBO
I CEO  I B  0 μA
1 α

23
Beta ()
 represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)

In DC mode:
IC
βdc 
IB

In AC mode:
I C
 ac  VCE constant
IB

24
Beta ()
Determining  from a Graph

(3.2 mA  2.2 mA)


β AC 
(30 μA  20 μA)
1 mA
 V  7.5
10 μA CE
 100

2.7 mA
β DC  VCE  7.5
25 A
 108

25
Beta ()

Relationship between amplification factors  and 

β α
α β
β1 α1

Relationship Between Currents

I C  βI B I E  (β  1)I B

26
BJT biasing modes

27
Common–Collector Configuration

The input is on the


base and the output is
on the emitter.

28
Common–Collector Configuration

The characteristics are


similar to those of the
common-emitter
configuration, except the
vertical axis is IE.

29
Operating Limits for Each Configuration

VCE is at maximum and IC is at


minimum (ICmax= ICEO) in the cutoff
region.

IC is at maximum and VCE is at


minimum (VCE max = VCEsat = VCEO) in
the saturation region.

The transistor operates in the active


region between saturation and cutoff.

30
Power Dissipation
Common-base:
PCmax  VCB I C

Common-emitter:

PCmax  VCE I C

Common-collector:

PCmax  VCE I E

31
Transistor Specification Sheet

32
Transistor Terminal Identification

33
BJT biasing modes

34
Applications OF BJT
The BJT remains a device that excels in some
applications, such as discrete circuit design,
due to the very wide selection of BJT types
available, and because of its high
transconductance and output resistance
compared to MOSFETs. The BJT is also the
choice for demanding analog circuits,
especially for very-high-frequency applications,
such as radio-frequency circuits for wireless
systems. Bipolar transistors can be combined
With MOSFETs in an integrated
circuit by using a BiCMOS
process of wafer fabrication to
create circuits that take
advantage of the application
strengths of both types of
transistor.

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