Bipolar Junction Transistors
Bipolar Junction Transistors
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Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp
npn
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Definition of bjt
A bipolar transistor is that which
is composed entirely of one type
of semiconductor, silicon.
Abbreviated BJT. Also known as
silicon homojunction.
A bipolar (junction) transistor (BJT) is a
three-terminal electronic device constructed
of doped semiconductor material and may be
used in amplifying or switching applications.
Bipolar transistors are so named because
their operation involves both electrons and
holes. Charge flow in a BJT is due to
bidirectional diffusion of charge carriers
across a junction between two regions of
different charge concentrations.
This mode of operation is contrasted with
unipolar transistors, such as field-effect
transistors, in which only one carrier type
is involved in charge flow due to drift. By
design, most of the BJT collector current
is due to the flow of charges injected
from a high-concentration emitter into the
base where there are minority carriers
that diffuse toward the collector, and so
BJTs are classified as minority-carrier
devices.
BJT in Active Mode
Operation
Forward bias of EBJ injects electrons from emitter into base
(small number of holes injected from base into emitter)
Most electrons shoot through the base into the collector across
the reverse bias junction (think about band diagram)
Some electrons recombine with majority carrier in (P-type) base
region
Circuit Configuration
Transistor Operation
With the external sources, VEE and VCC, connected as shown:
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Currents in a Transistor
IE IC IB
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Common-Base Configuration
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The common-base (CB) transistor
configuration, which is also known as the
'grounded base' configuration, is shown in
Figure. In this configuration, the terminal
common to both the input and the output
of the circuit is the base.
The input current and output voltage of the
common-base configuration, which are the
emitter current IE and the collector-base voltage
Vcb, respectively, are often considered as the
independent variables in this circuit. Its
dependent variables, on the other hand, are the
emitter-base voltage Veb (which is the input
voltage) and the collector current IC (which is the
output current).
In the common base
configuration, the input signal is
applied to the emitter, the output is
taken from the collector, and the
base is the element common to
both input and output
Since part of the emitter current
flows into the base and does not
appear as collector current,
collector current will always be less
than the emitter current that causes
it
Common-Base Amplifier
Input Characteristics
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Common-Base Amplifier
Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).
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Operating Regions
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Approximations
I I
C E
Base-emitter voltage:
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Alpha (a)
The current gain in the common-base circuit is
calculated in a method similar to that of the common
emitter except that the input current is IE not IB and
the term ALPHA (a) is used in place of beta for gain
Alpha () is the ratio of IC to IE :
IC
αdc
IE
Ideally: a = 1
In reality: a is between 0.9 and 0.998
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The input current flowing into
the emitter is quite large as its
the sum of both the base current
and collector current
respectively therefore, the
collector current output is less
than the emitter current input
resulting in a Current Gain for
this type of circuit of less than
"1“.
Transistor Amplification
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Common–Emitter Configuration
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Common-Emitter Characteristics
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Common-Emitter Amplifier Currents
Ideal Currents
IE = IC + IB IC = IE
Actual Currents
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Beta ()
represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)
In DC mode:
IC
βdc
IB
In AC mode:
I C
ac VCE constant
IB
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Beta ()
Determining from a Graph
2.7 mA
β DC VCE 7.5
25 A
108
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Beta ()
β α
α β
β1 α1
I C βI B I E (β 1)I B
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BJT biasing modes
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Common–Collector Configuration
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Common–Collector Configuration
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Operating Limits for Each Configuration
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Power Dissipation
Common-base:
PCmax VCB I C
Common-emitter:
PCmax VCE I C
Common-collector:
PCmax VCE I E
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Transistor Specification Sheet
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Transistor Terminal Identification
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BJT biasing modes
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Applications OF BJT
The BJT remains a device that excels in some
applications, such as discrete circuit design,
due to the very wide selection of BJT types
available, and because of its high
transconductance and output resistance
compared to MOSFETs. The BJT is also the
choice for demanding analog circuits,
especially for very-high-frequency applications,
such as radio-frequency circuits for wireless
systems. Bipolar transistors can be combined
With MOSFETs in an integrated
circuit by using a BiCMOS
process of wafer fabrication to
create circuits that take
advantage of the application
strengths of both types of
transistor.