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Physics of VLSI Devices (ECE5018) - CAT-1 Solutions: Dr. Rajan Pandey Associate Professor, SENSE

This document contains 9 questions regarding semiconductor physics and device characteristics. The questions cover topics like: - The position of the Fermi level based on the probabilities of states being filled or empty at the band edges. - Calculating carrier concentrations and resistivity based on doping levels, temperature, and material properties. - Determining Fermi level positions and drawing band diagrams for n-type and p-type semiconductors. - Computing minority carrier concentrations and resistances of semiconductor samples.

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Vibha M V
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93 views14 pages

Physics of VLSI Devices (ECE5018) - CAT-1 Solutions: Dr. Rajan Pandey Associate Professor, SENSE

This document contains 9 questions regarding semiconductor physics and device characteristics. The questions cover topics like: - The position of the Fermi level based on the probabilities of states being filled or empty at the band edges. - Calculating carrier concentrations and resistivity based on doping levels, temperature, and material properties. - Determining Fermi level positions and drawing band diagrams for n-type and p-type semiconductors. - Computing minority carrier concentrations and resistances of semiconductor samples.

Uploaded by

Vibha M V
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Physics of VLSI Devices

(ECE5018) – CAT-1 Solutions


Dr. Rajan Pandey
Associate Professor, SENSE
C1+TC1
Q-1: If the probability that a state being filled at
the conduction band edge (Ec) is precisely equal to
the probability that a state is empty at the valence
band edge (Ev), where is the Fermi level located?
Use Fermi-Dirac distribution function to arrive at
your conclusion mathematically. Will this Fermi
level change with temperature? What factors
govern the change in the Fermi level positions?

[10 = 7+1+2 marks]

Donor and/or acceptor doping together with


temperature
Q-2: (a) Under equilibrium condition, what is the
probability of an electron state being occupied if it is
located at the Fermi level?
(b) If EF is positioned at EC, determine the probability of
finding electrons in states at EC + kT. (A numerical answer is
required.)
(c) The probability of a state being filled at EC + kT is equal
to the probability of a state being empty at EC + 3 kT. Where
is the Fermi level located?

(Marks 2+3+5)
Q-3. The Fermi level in n-type silicon at T = 300 K is
245 meV below the conduction band and 200 meV
below the donor level. Determine the probability
of finding an electron (a) in the donor level and (b)
in a state in the conduction band kT above the
conduction band edge.

[5+5 marks] EC – Ef = 245 meV


EC – Ed = 45 meV

 Ed – Ef = 200 meV
Q-4: A new semiconductor has Nc = 1019 cm-3, Nv
= 5 x 1018 cm-3, and Eg = 2 eV. If it is doped with
1017 donors (fully ionized), calculate the electron,
hole, and intrinsic carrier concentrations at
627°C. Sketch the simplified band diagram,
showing the position of EF.

[10 marks]
Q-5: A Silicon sample is doped with Arsenic with number density Nd = 8×1016 cm-3
and as well as Boron with number density Na = 3×1016 cm-3. Find Electron
concentration, hole concentration and position of Fermi level at 300K. Show
Fermi level on suitable band diagram.

[10 marks]
Q6. A new semiconductor has Nc =5x 1019 cm-3, Nv =8x1018 cm-3 and Eg =1.8eV. If it is doped
with 5 x 1017 cm-3 acceptors, calculate the electron, hole and the intrinsic carrier
concentration at 327 ºC. Show Fermi level on suitable band diagram. [10 marks]
Q-7: An N-type silicon sample has a uniform density Nd = 1017cm–3 of arsenic, and a P-
type sample has Na = 1015cm–3. A third sample has both impurities present at the
same time.
(a) Find the equilibrium minority carrier concentrations at 300 K in each sample.
(b) Find the conductivity of each sample at 300 K.
(c) Find the Fermi level in each material at 300 K with respect to either the
conduction band edge (Ec) or the valence band edge (Ev).

[10 marks]
Q-8: (a) A silicon sample maintained at T = 300 K is
uniformly doped with Nd = 1016cm–3 donors. Calculate the
resistivity of the sample.
(b) The silicon sample of part (a) is “compensated” by
adding Na = 1016cm–3 acceptors. Calculate the resistivity of
the compensated sample.
(c) Compute the resistivity of intrinsic (Na = 0, Nd = 0)
silicon at T = 300 K. Compare it with the result of part (b)
and comment. μn(Nd = 1016cm-3 of As) is 1250 cm2/Vs.

[10 marks]

There are ionized donors and acceptors in a


compensated semiconductor causing scattering.
Q-9: A sample of N-type silicon is at the room temperature.
When an electric field with a strength of 1000 V/cm is
applied to the sample, the hole velocity is measured and
found to be 2 x 105 cm/sec.
(a) Estimate the thermal equilibrium electron and hole
densities, indicating which is the minority carrier.
(b) Find the position of EF with respect to EC and EV.
(c) The sample is used to make an integrated circuit resistor.
The width and height of the sample are 10 μm and 1.5 μm,
respectively, and the length of the sample is 20 μm.
Calculate the resistance of the sample.

[10 marks]

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