Unit-VI Nano-Final
Unit-VI Nano-Final
Nanotechnology
Origin of Nanotechnology, Nano Scale, Surface to
Volume Ratio, Quantum Confinement, Bottom-up
Fabrication, Sol-gel, Precipitation, Chemical vapor
Deposition (CVD); Top-down Fabrication; Thermal
evaporation, Ball Milling, Characterization of Nano
materials (XRD&TEM), carbon nano tubes (CNTs),
Applications of Nano Materials.
Introduction:
Richard Feynman was the first person to introduced
nanoscience in 1959.
Prof. Norio Taniguchi of Japan in 1974 used the word nano
technology.
The word “nano” is a Greek word and meaning is dwarf(small).
The prefix nano means “ one billionth” or 10-9 meter.
Size limitation of nano material is the 1-100 nm range.
Neglecting spaces between the smaller boxes, the volumes of the box on
the left and the boxes on the right are the same but the surface area of the
smaller boxes added together is much greater than the single box.
Quantum Confinement Effect
Out of nuclear, gravitational, electric and magnetic forces, at nano scale electric and
magnetic forces become more predominant.
As we know that gravitational forces are mass dependent. Hence, at nano scale the
mass of the particles is very small and gravitational forces becomes insignificant.
Nuclear forces (Strong, Weak) are significant over the distance of 10 -5 nm, which is
extremely shorter than nano scale, so they are insignificant.
Random molecular motion:
•2-D(Delocalisation dimensions)
One dimension (t measured along z-axis) at nanometric scale;two other
dimensions (Lx, Ly) are large.
Example: Thin nanofilms
•3-D (Delocalisation dimensions)
All of the three dimensions (Lx, Ly, Lz) are not at nanometric scale.
Example: Nanocrystalline and nanocomposite materials.
A bulk conductor has all its three dimensions more than
100 nm.
Quantum dot : The extreme case of this process of size
reduction in which all three dimensions reach at the
nanorange is called quantum dot ( O-dimension).
a.It consists of stainless steel chamber and several small iron, silicon carbide, hardened
steel, or tungsten carbide balls to rotate inside the mill.
b.Powder of material is put in the steel chamber.
c.Small balls are allowed to rotate around the inside of chamber and then fall on solid
material with gravity force and crush the solid into nano crystalline.
a.A magnet is positioned outside the chamber to apply pulling force on the material. This
force raises milling energy as the milling chamber or container rotates the metallic balls.
b.The ball and material - mass ratio is generally kept at 2:1.
c.These metallic balls impart very high energy to the powder resulting in crushing of the
powder. The ball milling process generally takes 100 to 150 hrs to give uniformly crushed
fine powder.
d.It is mechanical processing technique; consequently the structural as well as chemical
changes are caused by the mechanical energy.
Ball Milling method
2.Chemical vapor deposition
3.Physical vapor deposition
Chemical Vapour Deposition:
Reaction chamber
Hot Chamber
Rotating belt
In this process, other reactants are used to control the reaction rate.
And the particle size can be controlled by varying the inert gas pressure.
inside the chamber.
Advantages:
They increased yield of nanoparticles.
A wider range of ceramics including nitrides and carbides can
be synthesized.
More complex oxides such as BaTiO3 or composites structures
can be formed.
In addition to the formation of a single phase nanoparticles by
CVD of a single precursor the reactor allows the synthesis of
a) Mixtures of nanoparticles of two phases or doped
nanoparticles by supplying two precursors at the front end of the
reactor
b) Coated nanoparticles, i.e n-ZrO2 coated with n-Al2O3 or
vice versa, by supplying a second precursor at a second stage of
the reactor.
Physical Vapour Deposition Method:
In PVD, the material goes from a condensed phase (as
precursor) to a vapor phase and then back to the
condensed phase (deposited as thin films).
In PVD, the film is deposited over the entire exposed
area of the object. It is basically a vaporization coating
method involving atomic scale transport of the material to
be coated.
The gas phase precursor condenses onto the substrate,
thereby creating the required layer. No chemical reactions
occur during the deposition process.
The process is performed under vacuum and comprises the
following steps
Evaporation: The target (material to be coated/deposited) is
incident with high energy source like an electron/ion beam. The
atoms are released from surface under go in to the vapour phase.
Transport: These atomic vapours are moved towards the surface of
the substrate requiring coating.
Deposition: Atomic vapours are deposited on the surface of the
substrate.
*Reaction: If the target materials is in the form of compounds such
as metal oxides, nitrides, carbides and the like materials,
intentionally introduced a gas which react with compounds of the
target material under go into the vaporization during the transport
before deposition on the substrate.
Physical vapour deposition Technique
Advantages of PVD