ELECTRONIC CIRCUIT ANALYSIS AND DESIGN

(21A040407)
UNIT-1: BJT Small signal model and Analysis

CO1: Analyse low frequency BJT& FET amplifiers using hybrid pie model

Topics Covered: BJT Small Signal Models:

Bipolar linear amplifier, Graphical and ac
equivalent circuit,
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN

Topics Covered:
• BJT Small Signal Models:
• Bipolar linear amplifier
• Graphical and ac equivalent circuit
Topics to be Covered:

• Small Signal Amplifiers Using MOSFETS:

– Graphical analysis, Load line and small signal
parameters
– Small signal equivalent circuit
– Small signal analysis of Common source, Common
drain , Common gate amplifiers
– Comparison of the three basic amplifier
configurations, Problem solving.
Topics to be Covered:

• JFET Small Signal Amplifiers:

– Small signal analysis of common source, common
drain, common gate amplifiers
– JFET as voltage variable resistor
– Problem solving.
Topics to be Covered:

• BJT Small Signal Models:

– Bipolar linear amplifier,
– Graphical and ac equivalent circuit,
– Small signal hybrid-Π equivalent circuit,
– Hybrid-Π equivalent circuit including the early
effect,
– Other small signal parameters and equivalent
circuits-h-parameters.
Topics to be Covered:

• Small Signal Analysis:

– Basic CE amplifier circuit
– Circuit with Emitter resistance
– ac load line analysis
– maximum symmetrical swing
– Small signal analysis-input and output impedances,
Voltage gain, Current gain of CB, CC amplifiers
– Problem solving.
BJT ( Bipolar Junction Trasistor)

• Invented in 1948 by Bardeen, Brattain and Shockley

• Contains three adjoining, alternately doped

semiconductor regions: Emitter (E), Base (B), and
Collector (C)
• The middle region, base, is very thin

• Emitter is heavily doped compared to collector. So,

emitter and collector are not interchangeable
 BJT ( Bipolar Junction Trasistor)

• Transistors are able to amplify or magnify a signal.

• It is a current controlled device.

• The three terminals are

– Base

– Collector

– Emitter.
What is Amplifier ?

• An amplifier is an electronic device that

increases the voltage, current, or power of a
signal.
• An Amplifier used to increase strength of weak
signal.
What is Linear Amplifier ?

• A linear amplifier magnifies an input signal

and produces an output signal whose
magnitude is larger and directly proportional
to the input signal.
• Super position principle applies for linear
amplifier.
 Transistor Biasing ( Q –Point)

(a) Bipolar transistor inverter circuit,

(b) inverter circuit showing both dc bias and ac signal sources in the base
circuit,
Summary of notation:
Variable Meaning

iB, vBE Total

instantaneous values
IB, VBE DC values
ib, vbe
Instantaneous ac values
Ib, Vbe Phasor values
Graphical Analysis:
• What is Q-Point ?
• Q point or the operating point of a device,
also known as a bias point, or
quiescent point is the steady-state DC voltage
or current at a specified terminal of an active
device such as a diode or transistor with no
input signal applied.
DC Load Line:

• DC Load line analyzes the variation of collector

currents and voltages, when no AC voltage is
applied.
• AC Load Line
• The AC load line gives the peak-to-peak voltage,
or the maximum possible output swing for a
given amplifier.
• The time-varying base current will induce an
ac collector current superimposed on the
quiescent collector current.
• The ac collector current then produces a
time-varying voltage across RC , which
induces an ac collector–emitter voltage as
• The ac collector–emitter voltage, or output
voltage, in general, will be larger than the
sinusoidal input signal, so that the circuit has
produced signal amplification—that is, the
circuit is an amplifier.
Fig: CE characteristics , DC load line and sinusoidal variation in
Base current, Collector current and Collector-Emitter Voltage.
The AC Equivalent Circuit:

iB Vs vBE characteristics with superimposed sinusoidal signals

The AC Equivalent Circuit (Contd..)

expanding the exponential term in a Taylor series,

Where,
The AC Equivalent Circuit (Contd..)

The Base–Emitter Loop: If the signal source, vs , is zero, then the base-emitter loop
equation is
-- (1)

From eq(1) DC Part will be zero,

-- (2)
 • The Collector–Emitter Loop: Again, if the signal source, vs , is
zero, then the collector emitter loop equation is
-- (3)

From Equation (2), we see that the left side of a Equation is zero

-- (4)
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND DESIGN

TOPICS COVERED:
• Small signal hybrid-Π equivalent circuit
• Hybrid-Π equivalent circuit including early effect
Small – signal ac analysis of transistor:

• V-I characteristics of an active device such as BJT are non-linear.

• The analysis of a non- linear device is complex.

• To simplify the analysis of the BJT, its operation is restricted to the

linear V-I characteristics around the Q-point i.e. in the active

region.

• This approximation is possible only with small input signals.

• With small input signals transistor can be replaced with small

signal linear model.

• This model is also called small signal equivalent circuit.

Small – signal ac analysis of transistor: (Contd..)

• There are three models commonly used in the

small – signal ac analysis of transistor networks:

– The re model

– The hybrid – pi model

– The hybrid equivalent model (h-parameter )

Small – signal ac analysis of transistor: (Contd..)

• All the transistor amplifiers are two port

networks having two voltages and two
currents. The positive directions of voltages
and currents.
• Out of four variables two can be selected as
are independent variables and two are
dependent variables.
 Small – signal ac analysis of transistor: (Contd..):
• The dependent variables can be expressed interns of
independent variables.
• This leads to various two port parameters out of which the
following three are important:
– Impedance parameters (z-parameters)

– Admittance parameters (y-parameters)

– Hybrid parameters (h-parameters)

• (V1 & I2) – Dependent Variables

• (I1 & V2 ) – Independent Variables
Small-Signal Hybrid-π Equivalent Circuit of the BJT
• Assuming the transistor as two port network.
• The iB vs vBE graph the small time varying signal is superimposed on
Q-point.
• The slope of Q-point is constant with units of conductance.
 Small-Signal Hybrid-π Equivalent Circuit of the BJT
• The inverse of this conductance is the small-
signal resistance defined as rπ

• The resistance rπ is called the diffusion

resistance or base–emitter input resistance
• For Output Collector–Emitter Port
• Assuming the collector current is independent of VCE

Which is called Transconductance

Small-Signal Hybrid-π Equivalent Circuit of the BJT

A simplified small-signal hybrid-π equivalent circuit

• Alternative Form of Equivalent Circuit

• We can relate s.s collector current to s.s base current as,

and is called an incremental or ac common-emitter current gain.

We can then write

Small-Signal Voltage Gain

The small-signal voltage gain, Av = Vo/Vs ,

Hybrid-π Equivalent Circuit, Including the Early Effect
• We have assumed that the collector current is independent of the
collector–emitter voltage.
• From The analysis of Early effect,

where VA is the Early voltage and is a

positive quantity
The output resistance ro is defined as

and is called the small-signal transistor output

resistance.
Hybrid-π Equivalent Circuit, Including the Early Effect

Fig: Expanded small-signal model of the BJT, including output resistance due to the
Early effect, for the case when the circuit contains the
(a) transconductance and
(b) Current gain parameters
Expanded Hybrid-π Equivalent Circuit:
• The parameter rb is the series resistance of the
semiconductor material between the external base terminal B
and an idealized internal base region B’.
• Typically, rb is a few tens of ohms and is usually much smaller
than rπ ; therefore, rb is normally negligible

• The parameter rμ is the

reverse-biased diffusion
resistance of the base–
collector junction.
• Which is in order of
megohms and can
normally be neglected (an
open circuit).
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN
Video-3

Topics Covered:
• H-Parameter equivalent circuit
• Re Model equivalent circuit
• Amplifier Configurations
• Voltage, current, Transconductance,
Transresistance Amplifiers
Other Small-Signal Parameters and Equivalent Circuits
re Model:

• In re model, the transistor

action has been replaced by a
single diode between emitter
and base terminals and a
controlled current source
between base and collector
terminals.

• This is rather a simple

equivalent circuit for a device
Other Small-Signal Parameters and Equivalent Circuits
• h-Parameter Model:
 Hybrid Parameter Model (Generalized model)
Ii Io
Linear Two port
Vi Device Vo

Ii Io
1 2
hi
Vi hrVo hfIi ho Vo

1' 2'

Vi h11 I i  h12Vo hi I i  hrVo

I o h21 I i  h22Vo h f I i  hoVo
 h-Parameters
Vi Vi
h11  h12 
Ii Vo 0 Vo I i 0
Io Io
h21  h22 
Ii Vo 0 Vo I i 0
h11 = hi = Input Resistance
h12 = hr = Reverse Transfer Voltage Ratio
h21 = hf = Forward Transfer Current Ratio
h22 = ho = Output Admittance
General h-Parameters for any Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
43
Common emitter hybrid equivalent circuit

44
 Simplified General h-Parameter Model
• The model can be simplified based on these approximations:

• hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified

45
Other Small-Signal Parameters and Equivalent Circuits
• h-Parameter Model:
H-parameters in terms of Hybrid –pi Parameters :
Amplifier Configurations:
• Voltage Amplifier:

Output voltage proportional to input voltage

Amplifier Configurations:
• Current Amplifier:

Output current proportional to input current

Amplifier Configurations:
• Transconductance amplifier:

Output current proportional to input voltage

Amplifier Configurations:
• Transresistance amplifier:

Output voltage proportional to input current

CE Amplifier:
CB Amplifier:
CC Amplifier:
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN
Video-4

Topics Covered:
• CE Amplifier ( Hybrid-π Model Analysis)
• CE Amplifier with Emitter Resistance
• CE with Emitter Bypass Capacitor
Common Emitter Amplifier: (CE Amplifier)
• Vs = Signal Source
• Rs = Source Resistance
• CC = Coupling capacitor
• R1 & R2 = Self bias
• Rc= Load
• Vcc = DC Supply Voltage
• Vo = output voltage.
Common Emitter Amplifier: (Contd..)
Common Emitter Amplifier: (Contd..)
Common Emitter Amplifier: (Contd..)
• Assuming R1 || R2 || rπ = RB
• And ro || RC = RC
• The above equation can be written as,
Common Emitter Amplifier: (Contd..)

• The two-port equivalent circuit

along with the input signal
source for the common emitter
amplifier

• Using a voltage-divider equation, we find the input voltage to the amplifier is

• The actual input voltage to the amplifier Vin is reduced compared to the input
signal.
• This is called a loading effect.
 CE amplifier with an emitter resistor:
• The voltage gain of a CE stage depends upon hfe (β).

• This transistor parameter depends upon temperature, aging

and the operating point.

• Moreover, hfe (β) may vary widely from device to device, even
for same type of transistor.

• To stabilize voltage gain A V of each stage, it should be

independent of hfe (β).

• A simple and effective way is to connect an emitter resistor Re

as shown in the fig. The resistor provides negative feedback
CE Amplifier with Emitter Resistor
CE Amplifier with Emitter Resistor (Contd..)
The ac output voltage is

To find the small-signal voltage gain we have to

finding the input resistance first.

The input resistance Rib is then defined as

• In the common-emitter configuration that includes an emitter

resistance,
• The small-signal input resistance looking into the base of the
transistor is rπ plus the emitter resistance multiplied by the factor
(1 + β).
• This effect is called the resistance reflection rule.
CE Amplifier with Emitter Resistor (Contd..)

The input resistance to the amplifier is now

We can relate Vin to Vs

• Combining above Equations and

We can find the small-signal
voltage gain is
CE Amplifier with Emitter Resistor (Contd..)

• From this equation, we see that if Ri RS and if (1 + β)RE rπ ,

then the small signal voltage gain is approximately

• The above Equation show that the voltage gain for with emitter
resistor circuit is less dependent on the current gain β than in
the without emitter resistance circuit
Circuit with Emitter Bypass Capacitor

• The emitter resistor must be

large for the purposes of dc
design.
• But it degrades the small-signal
voltage gain too severely
• So, It is necessary to use a
emitter bypass capacitor in
parallel with Emitter resistance.
• This resistor will act as open
circuit for DC, and act as short
circuit for ac signals.
• So that we can able to overcome
the problem of low voltage gain.
 • Problem:
• Determine the small-signal voltage gain and input resistance of
a common-emitter circuit with an emitter resistor.
• Form the circuit, the transistor parameters are:
• β = 100, VBE(on) = 0.7 V, and VA =∞.
• From a dc analysis of the circuit, we
can determine that
• ICQ = 2.16 mA and VCEQ = 4.81 V

• The small-signal hybrid-π parameters are

determined to be
• Problem:

DC Analysis:
• Problem:
• Problem:
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN
Video-5

TOPICS COVERED:
• AC Load line Analysis
• Maximum symmetrical Swing
AC Load line Analysis:

• A dc load line gives us a way of visualizing the

relationship between the Q-point and the
transistor characteristics.
• When capacitors are included in a transistor
circuit, a new effective load line, called an ac
load line, may exist.
• The ac load line helps in visualizing the
relationship between the small-signal
response and the transistor characteristics.
AC Load line Analysis: (Contd..)

• Apply KVL for o/p side ckt:

W.k.t

; When VCE = 0

; When IC = 0
which are the equation of the dc load line.
AC Load line Analysis: (Contd..)
The KVL equation around the collector–emitter loop is

This equation is the ac load line. The slope is given by

• The slope of the ac load line differs from that of the dc load line
because the emitter resistor RE2 is not included in the small-signal
equivalent circuit.
•The small-signal C–E voltage and collector current response are
functions of the resistor RC and RE1 only.
AC Load line Analysis: (Contd..)

• The dc and ac load lines and the signal responses to input signal
Problem:

• Determine the dc and ac load lines for the circuit shown in Figure
Assume the transistor parameters are: VEB(on) = 0.7 V, β = 150,
and VA =∞.
KVL equation around the C–E

The dc load line equation is then

Assuming that (1 + β)/β ∼= 1,

• The Q-point values are found to be

• IBQ = 5.96μA,
Problem:
• ICQ= IBQ = 0.894 mA,
• IEQ=IBQ = 0.90 mA,

• VECQ = 6.53 V.
Maximum Symmetrical Swing:
• When symmetrical sinusoidal signals are applied to the input of
an amplifier, symmetrical sinusoidal signals are generated at the
output, as long as the amplifier operation remains linear.
• Maximum symmetrical swing is the maximum output voltage or
current , that can be generated by the amplifier.
• We can use the ac load line to determine the maximum output
symmetrical swing.
• If the output exceeds this limit, a portion of the output signal will
be clipped and signal distortion will occur.
 Problem:
• Determine the maximum symmetrical swing in
the output voltage of the circuit.

• The ac load line is given in Figure

• The maximum negative swing in
the collector current is from 0.894 mA to zero;

• IBQ = 5.96μA,

• ICQ= IBQ = 0.894 mA,

• IEQ =IBQ = 0.90 mA,

• VECQ = 6.53 V.
•Therefore, the maximum possible symmetrical peak-to-peak ac collector
current is
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN
Video-6

Topics Covered:
• Common Collector Amplifier (Emitter
Follower)
• Small Signal Analysis
 CC Amplifier: (Emitter follower)

Assuming the coupling capacitor CC acts as a short circuit

CC Amplifier: (Emitter follower)
so the output voltage can be written as

Writing a KVL equation around the base-emitter loop, we obtain

 Input Resistance
We can also write
CC Amplifier: (Emitter follower)
Input Resistance
The input resistance Rib was given by Equation

Output Resistance

Assuming the input signal source is

ideal and that RS = 0. Vs = 0

A test voltage Vx is applied to the output

terminal and the resulting test current is Ix.

The output resistance, Ro, is given by

The control voltage Vπ is not zero ; & Vπ = −Vx

 Since Vπ = −Vx ,

The output resistance may also be written in a slightly different form

Inverse resistance reflection rule

Current Gain:
CC Amplifier: (Emitter follower)

Since gmVπ = βIb , then,

Writing the load current in terms of Io produces

Problem: (CC Amplifier)
Problem: (CC Amplifier)
Common Base Amplifier:

Assuming all capacitors are short circuited, and dc sources grounded.

Common Base Amplifier: (Contd..)
The small signal output voltage is given by

Writing a KCL equation at the emitter node,

we obtain

We can show that as RS approaches zero

Common Base Amplifier: (Contd..)
Current Gain:
• The current gain is defined as Ai = Io/Ii .
• Writing a KCL equation at the emitter node, we have

• Solving for Vπ , we obtain

The load current is given by

• If we take the limit as RE approaches infinity and RL approaches zero, then the current
gain becomes the short-circuit current gain given by

where α is the common-base current gain of

the transistor
Common Base Amplifier: (Contd..)
• Input Impedance:

If we write a KCL equation at the input,

we obtain

• Output Impedance

an equivalent resistance

The small-signal resistance ro is included & Vs = 0

Common Base Amplifier: (Contd..)

Apply KCL equation at the emitter node

Combining Equations

• If the input resistance RS = 0, then Req = 0 and

• the output resistance is just given by Roc = ro.
• Including a collector resistor and a load resistor, the output resistance.
Comparison of Three Amplifier Configurations:
H Parameter Analysis:
Hybrid Model representation of Common Emitter
Configuration:
hybrid model for transistor in three different
configurations
H-Parameter (Standard Equations):
Typical h-parameter values for a transistor

Paramete CE CC CB
r

hi 1100 Ω 1100 Ω 22 Ω

hr 2.5 × 10-4 1 3 × 10-4

hf 50 -51 -0.98

ho 25 µA/V 25 µA/V 0.49 µA/V

Simplified common emitter hybrid model:
Simplified common emitter hybrid model:

• In most practical cases it is appropriate to obtain

approximate values of A V , A i etc rather than
calculating exact values
• In the CE amplifier equivalent circuit, in terms of
h-parameters Since 1 / hoe in parallel with RL is
approximately equal to RL if 1 / hoe >> RL then hoe
may be neglected. Under these conditions.
• Ic = hfe IB .
• hre vc = hre Ic RL = hre hfe Ib RL .
• Since h fe.h re = 0.01(approximately), this voltage may
be neglected in comparison with h ie Ib drop across h ie
• If load resistance RL is small than hoe and hre can be
neglected.
Analysis of CE amplifier using simplified hybrid model:
Analysis of CE amplifier using simplified hybrid model:
Conditions required to get simplified hybrid model are
Figure: Simplified Hybrid model of CE amplifier
1. Current Gain (AI):
2. Input impedance (Zi):

3. Voltage Gain (AV):

4. Output Admittance (Yo):
CB Amplifier:
 Common Base Amplifier:

• The simplified hybrid model representation of

a CB amplifier is shown in the following figure
Analysis of CC amplifier using simplified hybrid model:
 Analysis of CC amplifier using simplified hybrid model:

1. Current Gain (AI):

2. Input Impedance (Zi):
3. Voltage Gain (AV):
4. Output Admittance (Yo):
 UNIT-1

ELECTRONIC CIRCUITS-ANALYSIS AND

DESIGN

TOPIC: JFET Small Signal Amplifiers

Small Signal Analysis of JFET:
• Field-effect transistor amplifiers provide an excellent voltage
gain with the added feature of high input impedance.

• They are also considered low-power consumption

configurations with good frequency range and minimal size
and weight.

• Both JFET and depletion MOSFET devices can be used to

design amplifiers having similar voltage gains.

• The depletion MOSFET circuit, however, has much higher

input impedance than a similar JFET configuration.
Small Signal Analysis of JFET:
Small Signal Analysis of JFET:
• Small signal model for the common source FET can be
used to analyzing the three basic FET Amplifier
configurations.
– Common Source (CS) Amplifier
– Common Drain (CD) Amplifier (Source Follower)
– Common Gate (CG) Amplifier

• CS - Good voltage amplification

• CD- buffer amplifier

• CG – High frequency amplifier

Small Signal Analysis of JFET:

• Small signal equivalent circuit of FET

Small Signal Analysis of JFET:
• Drain current in FET depends on both gate to source voltage
as well as drain to source voltage.
 Common Source JFET amplifier:

• From the above figure,

Common Source JFET amplifier: (Contd..)

The above circuit can be redrawn as

Common Source JFET amplifier: (Contd..)

𝑍𝑖=𝑅𝐺
• 1. Input Impedance (Zi):
Common Source JFET amplifier: (Contd..)

• 2. Output Resistance:
– It is the impedance measured at output terminals when Vi = 0.
Common Source JFET amplifier: (Contd..)

3. Voltage Gain (AV):

– It is the ratio of output voltage to input voltage
Problem on CS Amplifier:

• In the CS amplifier shown in figure, if RD = 5 KΩ RG =

10 MΩ, μ = 50, and rd = 35 kΩ. Evaluate Av, Zi, Zo.
 Problem on CS Amplifier:

• Input impedance Zi = RG = 10 MΩ

• Output Impedance Zo = rd || RD = RD
= 35KΩ || 5 KΩ = 5 KΩ
 UNIT-1

ELECTRONIC CIRCUITS-ANALYSIS AND

DESIGN

Topics Covered:
• Common Drain (CD) Amplifier
• Common Gate (CG) Amplifier
Common drain JFET amplifier:

• CD amplifier & its small signal equivalent circuit

Common Drain JFET amplifier: CD Amplifier:

• Alternate representation of Small signal model of Common drain

JFET amplifier
Common Drain JFET amplifier: (Contd..)

• Voltage Gain (Av):

– Applying KVL at input side circuit

Applying KVL at output side circuit

Common Drain JFET amplifier: (Contd..)

• From the circuit:

Common Drain JFET amplifier: (Contd..)
Common Gate JFET amplifier: (CG Amplifier)

• CG Amplifier with its Small signla Equivalent circuit

Common Gate JFET amplifier: (Contd..)
Common Gate JFET amplifier: (Contd..)
 UNIT-1

ELECTRONIC CIRCUITS-ANALYSIS AND

DESIGN

Topics Covered:
• JFET as Voltage Variable Resistor
JFET as Voltage Variable Resistor:
• The ideal current– voltage characteristics, when the
transistor is biased in the saturation region,

• where IDSS is the saturation current when vGS = 0,

• VP is the pinchoff voltage.

• FET is operated in the constant current

portion of its output characteristics for
the linear applications.
• In the region before pinch-off , VDS is

small, the drain to source resistance rd can

be controlled by the bias voltage V .

JFET as Voltage Variable Resistor:

• The FET is useful as Voltage Variable Resistor (VVR) or Voltage

Dependent Resistor (VDR).
• In JFET , the drain to source conductance gd = ID / VDS
JFET as Voltage Variable Resistor:

• The variation of rd with VGS can closely

approximated by the empirical
expression,

• Here , ro = drain resistance at zero gate bias

• Thus, small signal FET drain resistance rd varies with applied gate

voltage VGS and FET acts like a variable passive resistor.

• FET finds wide applications where VVR property is useful.
• Example : the VVR can be used in Automatic Gain Control (AGC)
circuit of multistage amplifier.
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN

Topics Covered:
• MOSFET Amplifiers Introduction
• V-I Relationship Equations.
MOSFET:

• Metal Oxide Semiconductor Field Effect

Transistor
• Very Small compared to BJT

• No resistors or diodes required in IC fabrication.

• Used in PC, Laptop , Analog Circuits

MOSFET:

• MOSFET
– Enhancement
– Depletion

Schematic diagram of an n-channel

enhancement-mode MOSFET
MOSFET Symbols:

• The n-channel enhancement-mode MOSFET:

– (a) conventional circuit symbol,
– (b) circuit symbol that will be used in this text, and
– (c) a simplified circuit symbol used in more advanced texts
MOSFET Symbols:

• The p-channel enhancement-mode MOSFET:

– (a) conventional circuit symbol,
– (b) circuit symbol that will be used in this text, and
– (c) a simplified circuit symbol used in more advanced texts
MOSFET I-V Relationships:
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN

Topics Covered:
• MOSFET Graphical Analysis
• AC Equivalent Circuit
• Small Signal model of MOSFET
 Graphical analysis, Load line and small signal parameters:

• NMOS common-source circuit with a time-varying voltage source in series

with the dc source.
• The dc load line and Q-point are functions of VGS, VDD, RD, and the
transistor parameters.
Graphical analysis, Load line and small signal parameters:
• For the output voltage to be a linear function of the input
voltage, the transistor must be biased in the saturation region.
• Instantaneous gate-to-source voltage is
• vGS = VGSQ + vi

• Where VGSQ is the dc component and vgs is

the ac component.
• The instantaneous drain current is

-------(2)

Substituting Equation (1) into (2)

Graphical analysis, Load line and small signal parameters:

• The first term in Equation (3) is the dc or quiescent drain

current IDQ,
• The second term is the time-varying drain current component
that is linearly related to the signal vgs, and
• The third term is proportional to the square of the signal
voltage.
Graphical analysis, Load line and small signal parameters:
• For a sinusoidal input signal, the squared term produces undesirable
harmonics, or nonlinear distortion, in the output voltage.
• To minimize these harmonics, we require

• Neglecting the v2gs term

• W.k.t

• The total current can be separated into a dc component and an ac

component.
• The ac component of the drain current is given by
 Graphical analysis, Load line and small signal parameters:

• The trans-conductance can also be obtained from the derivative

• From above equation, the trans-conductance is directly

proportional to the conduction parameter Kn, which in turn is
a function of the width-to-length ratio.
AC Equivalent Circuit:
• The output voltage of the circuit is given by

W.K.T

• The output voltage is also a combination of dc

and ac values.
• The time-varying output signal is the time-
varying drain-to-source voltage,

• Also we know that ,

AC Equivalent Circuit:

• The ac equivalent circuit in Figure is

developed by setting the dc sources equal to
zero.
• The small-signal relationships are given in
Equations

Fig: AC equivalent circuit of

common-source amplifier
with NMOS transistor
Small-Signal Equivalent Circuit of MOSFET:
• assume that the signal frequency is sufficiently low so that any
capacitance at the gate terminal can be neglected.
• The input to the gate thus appears as an open circuit, or an
infinite resistance
• W.k.t , the transconductance gm is a function of the Q-point
• The resulting simplified small signal equivalent circuit for the
NMOS device is shown in Figure
Small-Signal Equivalent Circuit of MOSFET:
• This small-signal equivalent circuit can also be expanded to take
into account the finite output resistance of a MOSFET biased in
the saturation region.
• From the result of the nonzero slope in the iD versus vDS curve

• where λ is the channel-length modulation parameter and is a

positive quantity
• The small-signal output resistance, as previously defined

• This small-signal output resistance is also a function of the Q-

point parameters
 Small-Signal Equivalent Circuit of MOSFET:

• Expanded small- signal equivalent circuit,

including output resistance, for NMOS
transistor
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN

Topics Covered:
• Common Source Amplifier (CS)
(MOSFET)
Common Source Amplifier: (CS Amplifier)-MOSFET
• All DC Sources Voltage sources
replaced with ground.
• All capacitors replaced by short
circuit.
• R1 & R2 Voltage divider bias
replaced by single eqv resistance.
Common Source Amplifier: (CS Amplifier)-MOSFET

• Voltage Gain:

• The output voltage is

• The input gate-to-source voltage is

Common Source Amplifier: (CS Amplifier)-MOSFET
• The small-signal voltage gain is

Input impedance (Zi):

• Input impedance is the impedance measured at the input
terminal.
• The input impedance can be calculated as

• Zi= R1 || R2
Common Source Amplifier: (CS Amplifier)-MOSFET

Output impedance (Zo):

• Output impedance is the impedance measured at the output
terminal with input voltage Vi=0. From the figure when Vi=0,
Vgs=0 and hence, The output impedance can be calculated as

• Zo= rd||RD

Normally rd >> RD

Hence, Zo= RD
Problem: (CS Amplifier)-MOSFET
• Determine the small-signal voltage gain and input and output
resistances of a common-source amplifier.
• The parameters are: VDD = 3.3 V,RD = 10 kΩ, R1 = 140 k Ω,
• R2 = 60 k Ω, and RSi = 4 k Ω.
• The transistor parameters are: VT N = 0.4 V, Kn = 0.5 mA/V2, and
λ = 0.02 V−1.

The dc or quiescent gate-to-source voltage is

The quiescent drain current is

Problem: (CS Amplifier)-MOSFET
The quiescent drain-to-source voltage is

Small-signal Voltage Gain:

The small-signal transconductance gm is then

The small-signal output resistance is

Problem: (CS Amplifier)-MOSFET

• The input resistance to the amplifier is

Input Resistance:

Output Resistance:
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN

Topics Covered:
• Common Drain Amplifier (CD)
(MOSFET)
Common Drain Amplifier (MOSFET) – Source Flower

• Fig: Small-signal equivalent circuit of NMOS source follower

• We can re arrange the equivalent circuit like,
Common Drain Amplifier (MOSFET) – Source Flower

Voltage Gain:
• The output voltage is given by

Writing a KVL equation from input to output results in the following

Common Drain Amplifier (MOSFET) – Source Flower

• Therefore, Vgs is
Common Drain Amplifier (MOSFET) – Source Flower

Output Impedance: (Z0):

• Set Vi = 0 and apply a test voltage Vx.
• Since there are no capacitances in the circuit, the output
impedance is simply an output resistance
Common Drain Amplifier (MOSFET) – Source Flower

• Writing a KCL equation at the output

Since there is no current in the input portion of the circuit, we see that Vgs = −Vx

The output resistance is then

Common Drain Amplifier (MOSFET) – Source Flower

Input impedance (Zi):

• Input impedance is the impedance measured at the input
terminal.
• The input impedance can be calculated as

• Zi= Rsi + R1 || R2 = R1 || R2
 UNIT-1
ELECTRONIC CIRCUITS-ANALYSIS AND
DESIGN

Topics Covered:
• Common Gate Amplifier (CG)
(MOSFET)
Common Gate Amplifier (MOSFET)

• Fig show CG Amplifier biased with a constant-current source IQ.

• The gate resistor RG prevents the buildup of static charge on the gate
terminal.
• the capacitor CG ensures that the gate is at signal ground.
• The coupling capacitor CC1 couples the signal to the source,
• The coupling capacitor CC2 couples the output voltage to load resistance
RL.
Common Gate Amplifier (MOSFET)

• The small-signal
transistor resistance
ro is assumed to be
infinite.

Voltage Gain:
• The output voltage is
Common Gate Amplifier (MOSFET)

• Writing the KVL equation around

the input

• where Ii = −gmVgs .

• The gate-to-source voltage can then be written as

Common Gate Amplifier (MOSFET)

Current Gain (Ai):

• common-gate circuit with a
Norton equivalent circuit
• The output current Io can be
written

At the input we have

Common Gate Amplifier (MOSFET)

• If RD >> RL and gm Rsi >>1, then the current gain is essentially

unity.

Input Impedance (Zi):

• The common-gate circuit has a low input resistance because of the
transistor

Since Ii = −gmVgs
Common Gate Amplifier (MOSFET)

• Output Resistance(Ro):
• From fig Vgs = − gmVgs.RSi,
• Input signal voltage equal to
zero Vgs = 0.
• Consequently, gmVgs = 0

• The effective output resistance (Ro’)

• R0’ = RD || RL
Comparison of Three FET Amplifier Configurations:
End
 Hybrid –pi model : (High Frequency)

• This is more accurate model for high frequency effects. The capacitors that

appear are stray parasitic capacitors between the various junctions of the device.
• These capacitances come into picture only at high frequencies.
Common Base Amplifier: (Contd..)