MODULE 5 (CHAPTER-12)

TOPIC : BIPOLAR JUNCTION

TRANSISTOR
&
BICMOS TECHNOLOGY

(STRUCTURE AND OPERATION)

 Table of Contents
• Introduction
• BJT: Structure
• BJT: Operation
 Forward Active Mode
 Reverse Active Mode
 Cutoff Mode
 Saturation Mode
BICMOS
 Introduction to Bi-CMOS

BJT + CMOS
 Offer high current  Offers high input
driving capability resistance
 Offer high speed and  Excellent for
gain, constructing simple,
 Offer Low low-power logic
output resistance gates
 Used in high-
frequency
analog amplifiers

Bi-CMOS
 Improved switching
speed
 Lower power
dissipation
Introduction – A BICMOS Inverter Circuit
BJT: Structure
BJT Operation: A Qualitative View
 Cntd.
• The emitter current consists of two components: electrons
injected from the emitter into the base region, and holes
injected from the base into the emitter.
• Minority charge carriers. Their concentration is highest at
the emitter side of the base and lowest (zero) at the
collector side of the base region.
• Diffusion current made up of electrons in the base is directly
proportional to the minority carrier concentration difference
between the emitter side and the collector side of the base.
• The thickness W of the base region must be much smaller
than the diffusion length LD of electrons in the base, i.e.,
W<< LD
 Cntd.
• The doping concentration of the emitter region must be
much larger than that of the base region, so that the
emitter terminal current is dominated by the electron
injection current component.
• A small number of holes will be injected from the base
into the emitter through the forward-biased base
emitter junction. The injected holes constitute the base
current IB.
• Collector current is in fact proportional to the base
current, with a very large proportionality factor, also
called the current gain.
BJT Current-Voltage Models
The operational characteristics of npn
bjt transistor under various
conditions will be analysed in the
following by using the well-known
Ebers-Moll model
 BJT : Operation Modes

• The four possible modes

of operation are listed
below as a function of
bias directions applied to
the two junctions
 1] Forward Active Mode

• Base-Emitter junction is Forward-

Biased which means , VBE > 0

• Base-Collector junction is
Reverse-Biased
which means, VBC< 0

The reverse-biased base-collector

junction is limited to reverse
saturation current, Ics.
 2] Reverse Active Mode

• Base-Emitter junction is Reverse Biased

which means , VBE < 0

• Base-Collector junction is Forward Biased

which means, VBC > 0

The reverse-biased base-

emitter junction is limited to
small reverse saturation
current, I . ES
 3] Cutoff Mode
• Base-Emitter junction is Reverse
Biased which means , VBE <
0

• Base-Collector junction is Reverse

Biased which means, VBC < 0

The pn junction currents IF and IR are

both reduced to the corresponding
reverse saturation values,
IF = - IES
IR = - ICS
Both the emitter current and the collector current of the bipolar
transistor in cut-off mode are even smaller than the junction reverse
saturation currents, ICS and IES.
 4] Saturation Mode

• Base-Emitter junction
is Forward Biased
which means , VBE > 0

• Base-Collector junction
is Forward Biased
which means, VBC > 0
 BJT Inverter Circuit:
Static Characteristics
• The circuit diagram of the resistive-load BJT
inverter circuit is
 Cntd.
• The output voltage as function of collector current Ic
• V0Ut= VC - RC IC.
• If input voltage is smaller than base-emitter turn on
voltage, transistor is in cut-off mode Ic is approximately
0 and VOH will be equal to power supply voltage.
• Once the applied input voltage is increased above turn
on voltage, transistor enters the forward active mode.
• As the input voltage is further increased, the output
voltage continues to decrease, until the transistor
enters the saturation region.
Cntd.
Cntd.
Cntd.
 Dynamic Behaviour of BJTs
• Charge-Control Model
Cntd.
Cntd.
Cntd.
Cntd.
Cntd.
Cntd.
Cntd.
Cntd.
Cntd.
BJT Inverter Delay Times
Cntd.
 INTRODUCTION TO BICMOS
 The history of semiconductor devices started in
1930’s when Lienfed and Heil first proposed the
mosfet.

 Bipolar Technology was started in 1980’s.

 CMOS Technology was also started in mid 1980’s.

 Later in 1990 there was a cross over between bipolar

and CMOS Technology.

 BiCMOS technology combines Bipolar and CMOS

transistors onto a single integrated circuit where the
advantages of both can be utilized.
CHARACTERISTICS OF BIPOLAR
TECHNOLOGY
 Higher switching speed
 Higher current drive per unit area, higher gain
 Generally better noise performance and better
high frequency characteristics
 Improved I/O speed
 High power dissipation
 lower input impedance (high drive current)
 low packing density
 low delay sensitivity to load
 High transconductance gm (gm  Vin)
 It is essentially unidirectional.
 CHARACTERISTICS OF CMOS TECHNOLOGY

 Lower static power dissipation

 Higher noise margins
 Higher packing density
 High yield with large integrated complex functions
 High input impedance (low drive current)
 Scale-able threshold voltage
 High delay load sensitivity
 Low output drive current
 Low trans conductance
 Bi-directional capability (drain & source are
interchangeable)
 ADVANTAGES OF BICMOS TECHNOLOGY

 Improved speed over CMOS

 Lower power dissipation than Bipolar
 High performance
 Latch up immunity
 Flexible I/O’s for high performance
 Improved current drive over CMOS
 Improved packing density over bipolar
 High input impedance
 Low output impedance
 High Gain and low noise
 Introduction to Bi-CMOS

BJT + CMOS
 Offer high current  Offers high input
driving capability resistance
 Offer high speed and  Excellent for
gain, constructing simple,
 Offer Low low-power logic
output resistance gates
 Used in high-
frequency
analog amplifiers

Bi-CMOS
 Improved switching
speed
 Lower power
dissipation
BiCMOS INTEGRATED CIRCUITS
BiCMOS INVERTER CIRCUIT WITH RESISTIVE
BASE PULL-DOWN
BiCMOS INVERTER CIRCUIT WITH ACTIVE
BASE PULL-DOWN
VOLTAGE TRANSFER CHARACTERSTICS OF
THE BiCMOS INVERTER CIRCUIT
OUTPUT VOLTAGE WAVEFORM OF CMOS
INVERTER AND BiCMOS INVERTER
COMPARISON BETWEEN BASIC CMOS
&
1.Speed Comparison
BiCMOS 3.Power -Delay

2.Delay 4.Area
Comparison Comparison
 BiCMOS INVERTER EQUIVALENT CIRCUIT
CIRCUIT DURING USED FOR PULL UP
TRANSIENT OUTPUT DELAY ANALYSIS
PULL UP EVENT
OUTPUT VOLTAGE WAVEFORM DURING THE
PULL-UP TRANSIENT EVENT
 BiCMOS INVERTER
EQUIVALENT CIRCUIT
CIRCUIT DURING
USED FOR PULL-DOWN
TRANSIENT OUTPUT
DELAY ANALYSIS
PULL-DOWN EVENT
 DISADVANTAGES
 Increased manufacturing process complexity
 higher cost
 Speed degradation due to scaling
 longer fabrication cycle time
BiCMOS process
 Bipolar process
+
Well
+
Gate Oxide & Poly
+
CMOS process
CIRCUIT DIAGRAM OF CIRCUIT DIAGRAM
BiCMOS NOR2 GATE OF BiCMOS NAND2
GATE
CIRCUIT DIAGRAM OF BiCMOS COMPLEX
LOGIC GATE
BiCMOS COMMON SENSE AMPLIFIER
APPLICATIONS OF BICMOS TECHNOLOGY
 BiCMOS has been widely used in many applications like
 Static Random Access Memory(SRAM) circuits
 Wireless Communication equipments like Transceivers,
Amplifiers, Oscillators etc
 System-on-Chip Technology
 Personal Internet Access Devices
 Set-top boxes .
 And many mixed signal applications.
 Full custom ICs , Semi custom Ics.
 ALU’s, Barrel Shifters , Adders, mixers, ADC, DAC , Gate
arrays .
 SRAM, DRAM.
 Micro-proessor, Controller.