Class 11
Class 11
class11.ppt
Random-Access Memory (RAM)
Key features
RAM is traditionally packaged as a chip.
Basic storage unit is normally a cell (one bit per cell).
Multiple RAM chips form a memory.
Static RAM (SRAM)
Each cell stores a bit with a four or six-transistor circuit.
Retains value indefinitely, as long as it is kept powered.
Relatively insensitive to electrical noise (EMI), radiation, etc.
Faster and more expensive than DRAM.
Dynamic RAM (DRAM)
Each cell stores bit with a capacitor. One transistor is used for access
Value must be refreshed every 10-100 ms.
More sensitive to disturbances (EMI, radiation,…) than SRAM.
Slower and cheaper than SRAM.
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SRAM vs DRAM Summary
16 x 8 DRAM chip
cols
0 1 2 3
2 bits 0
/
addr
1
rows
memory supercell
2
controller (2,1)
(to CPU)
3
8 bits
/
data
8 3
/
data
supercell 3
8
(2,1) /
data
supercell
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(2,1)
Memory Modules
addr (row = i, col = j)
: supercell (i,j)
DRAM 0
64 MB
memory module
consisting of
DRAM 7
eight 8Mx8 DRAMs
63 56 55 48 47 40 39 32 31 24 23 16 15 8 7 0
Memory
controller
64-bit doubleword at main memory address A
64-bit doubleword
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Enhanced DRAMs
DRAM Cores with better interface logic and faster I/O :
Synchronous DRAM (SDRAM)
Uses a conventional clock signal instead of asynchronous control
Double data-rate synchronous DRAM (DDR SDRAM)
Double edge clocking sends two bits per cycle per pin
RamBus™ DRAM (RDRAM)
Uses faster signaling over fewer wires (source directed clocking)
with a Transaction oriented interface protocol
Obsolete Technologies :
Fast page mode DRAM (FPM DRAM)
Allowed re-use of row-addresses
Extended data out DRAM (EDO DRAM)
Enhanced FPM DRAM with more closely spaced CAS signals.
Video RAM (VRAM)
Dual ported FPM DRAM with a second, concurrent, serial interface
Extra functionality DRAMS (CDRAM, GDRAM)
Added SRAM (CDRAM) and support for graphics operations (GDRAM)
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Nonvolatile Memories
DRAM and SRAM are volatile memories
Lose information if powered off.
Nonvolatile memories retain value even if powered off
Read-only memory (ROM): programmed during production
Magnetic RAM (MRAM): stores bit magnetically (in development)
Ferro-electric RAM (FERAM): uses a ferro-electric dielectric
Programmable ROM (PROM): can be programmed once
Eraseable PROM (EPROM): can be bulk erased (UV, X-Ray)
Electrically eraseable PROM (EEPROM): electronic erase capability
Flash memory: EEPROMs with partial (sector) erase capability
Uses for Nonvolatile Memories
Firmware programs stored in a ROM (BIOS, controllers for disks,
network cards, graphics accelerators, security subsystems,…)
Solid state disks (flash cards, memory sticks, etc.)
Smart cards, embedded systems, appliances
Disk caches
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Traditional Bus Structure Connecting
CPU chip
register file
ALU
I/O main
bus interface
bridge memory
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Memory Read Transaction (1)
CPU places address A on the memory bus.
ALU
%eax
main memory
I/O bridge 0
A
bus interface x A
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Memory Read Transaction (2)
Main memory reads A from the memory bus, retrieves
word x, and places it on the bus.
register file
Load operation: movl A, %eax
ALU
%eax
main memory
I/O bridge x 0
bus interface x A
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Memory Read Transaction (3)
CPU read word x from the bus and copies it into
register %eax.
ALU
%eax x
main memory
I/O bridge 0
bus interface x A
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Memory Write Transaction (1)
CPU places address A on bus. Main memory reads it
and waits for the corresponding data word to arrive.
ALU
%eax y
main memory
I/O bridge 0
A
bus interface A
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Memory Write Transaction (2)
CPU places data word y on the bus.
ALU
%eax y
main memory
I/O bridge 0
y
bus interface A
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Memory Write Transaction (3)
Main memory reads data word y from the bus and
stores it at address A.
register file
Store operation: movl %eax, A
ALU
%eax y
main memory
I/O bridge 0
bus interface y A
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Memory Subsystem Trends
Observation: A DRAM chip has an access time of about
50ns. Traditional systems may need 3x longer to get
the data from memory into a CPU register.
Modern systems integrate the memory controller
onto the CPU chip: Latency matters!
DRAM and SRAM densities increase and so does the
soft-error rate:
Traditional error detection & correction (EDC) is a must have
(64bit of data plus 8bits of redundancy allow any 1 bit error
to be corrected and any 2 bit error is guaranteed to be
detected)
EDC is increasingly needed for SRAMs too
ChipKill™ capability (can correct all bits supplied by one
failing memory chip) will become standard soon
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Disk Geometry
Disks consist of platters, each with two surfaces.
Each surface consists of concentric rings called tracks.
Each track consists of sectors separated by gaps.
tracks
surface
track k gaps
spindle
sectors
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Disk Geometry (Muliple-Platter View)
Aligned tracks form a cylinder.
cylinder k
surface 0
platter 0
surface 1
surface 2
platter 1
surface 3
surface 4
platter 2
surface 5
spindle
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Disk Capacity
Capacity: maximum number of bits that can be stored.
Vendors express capacity in units of gigabytes (GB), where
1 GB = 109 Bytes (Lawsuit pending! Claims deceptive advertising).
Capacity is determined by these technology factors:
Recording density (bits/in): number of bits that can be squeezed
into a 1 inch segment of a track.
Track density (tracks/in): number of tracks that can be squeezed
into a 1 inch radial segment.
Areal density (bits/in2): product of recording and track density.
Modern disks partition tracks into disjoint subsets called
recording zones
Each track in a zone has the same number of sectors, determined
by the circumference of innermost track.
Each zone has a different number of sectors/track
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Computing Disk Capacity
Capacity = (# bytes/sector) x (avg. # sectors/track) x
(# tracks/surface) x (# surfaces/platter) x
(# platters/disk)
Example:
512 bytes/sector
300 sectors/track (on average)
20,000 tracks/surface
2 surfaces/platter
5 platters/disk
The disk
The read/write head
surface
is attached to the end
spins at a fixed
of the arm and flies over
rotational rate
the disk surface on
a thin cushion of air.
spindle
spindle
spindle
spindle
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Disk Operation (Multi-Platter View)
read/write heads
move in unison
from cylinder to cylinder
arm
spindle
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Disk Access Time
Average time to access some target sector approximated by :
Taccess = Tavg seek + Tavg rotation + Tavg transfer
Seek time (Tavg seek)
Time to position heads over cylinder containing target sector.
Typical Tavg seek = 9 ms
Rotational latency (Tavg rotation)
Time waiting for first bit of target sector to pass under r/w head.
Tavg rotation = 1/2 x 1/RPMs x 60 sec/1 min
Transfer time (Tavg transfer)
Time to read the bits in the target sector.
Tavg transfer = 1/RPM x 1/(avg # sectors/track) x 60 secs/1 min.
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Disk Access Time Example
Given:
Rotational rate = 7,200 RPM
Average seek time = 9 ms.
Avg # sectors/track = 400.
Derived:
Tavg rotation = 1/2 x (60 secs/7200 RPM) x 1000 ms/sec = 4 ms.
Tavg transfer = 60/7200 RPM x 1/400 secs/track x 1000 ms/sec =
0.02 ms
Taccess = 9 ms + 4 ms + 0.02 ms
Important points:
Access time dominated by seek time and rotational latency.
First bit in a sector is the most expensive, the rest are free.
SRAM access time is about 4 ns/doubleword, DRAM about 60 ns
Disk is about 40,000 times slower than SRAM,
2,500 times slower then DRAM.
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Logical Disk Blocks
Modern disks present a simpler abstract view of the
complex sector geometry:
The set of available sectors is modeled as a sequence of b-
sized logical blocks (0, 1, 2, ...)
Mapping between logical blocks and actual (physical)
sectors
Maintained by hardware/firmware device called disk
controller.
Converts requests for logical blocks into
(surface,track,sector) triples.
Allows controller to set aside spare cylinders for each
zone.
Accounts for the difference in “formatted capacity” and
“maximum capacity”.
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I/O Bus
CPU chip
register file
ALU
system bus memory bus
I/O main
bus interface
bridge memory
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disk 15-213, F’04
Reading a Disk Sector (1)
CPU chip
CPU initiates a disk read by writing a
register file
command, logical block number, and
destination memory address to a port
ALU
(address) associated with disk controller.
main
bus interface
memory
I/O bus
main
bus interface
memory
I/O bus
main
bus interface
memory
I/O bus
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The CPU-Memory Gap
The gap widens between DRAM, disk, and CPU speeds.
See “Hitting the Memory Wall: Implications of the Obvious”,
W. A. Wulf, S. A. McKee, Computer Architecture News 1995.
100,000,000
10,000,000
1,000,000
100,000 Disk seek time
DRAM access time
10,000
ns
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Locality
Principle of Locality:
Programs tend to reuse data and instructions near those
they have used recently, or that were recently referenced
themselves.
Temporal locality: Recently referenced items are likely to be
referenced in the near future.
Spatial locality: Items with nearby addresses tend to be
referenced close together in time.
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Locality Example
Question: Can you permute the loops so that the
function scans the 3-d array a[] with a stride-1
reference pattern (and thus has good spatial
locality)?
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Memory Hierarchies
Some fundamental and enduring properties of
hardware and software:
Fast storage technologies cost more per byte, have less
capacity, and require more power (heat!).
The gap between CPU and main memory speed is widening.
Well-written programs tend to exhibit good locality.
– 39 – 15-213, F’04
Caches
Cache: A smaller, faster storage device that acts as a
staging area for a subset of the data in a larger,
slower device.
Fundamental idea of a memory hierarchy:
For each k, the faster, smaller device at level k serves as a
cache for the larger, slower device at level k+1.
Why do memory hierarchies work?
Programs tend to access the data at level k more often than
they access the data at level k+1.
Thus, the storage at level k+1 can be slower, and thus larger
and cheaper per bit.
Net effect: A large pool of memory that costs as much as
the cheap storage near the bottom, but that serves data to
programs at the rate of the fast storage near the top.
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Caching in a Memory Hierarchy
Smaller, faster, more expensive
Level k: 8
4 9 14
10 3 device at level k caches a
subset of the blocks from level k+1
0 1 2 3
12 13 14 15
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General Caching Concepts
Program needs object d, which is stored
Request in some block b.
14
12
12
14
0 1 2 3 Cache hit
Level
4*
12 9 14 3 Program finds b in the cache at level
k:
k. E.g., block 14.
12
4* Request Cache miss
12 b is not at level k, so level k cache
must fetch it from level k+1.
E.g., block 12.
0 1 2 3 If level k cache is full, then some
Level 4
4* 5 6 7 current block must be replaced
k+1: (evicted). Which one is the “victim”?
8 9 10 11
Placement policy: where can the new
12 13 14 15 block go? E.g., b mod 4
Replacement policy: which block
should be evicted? E.g., LRU
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General Caching Concepts
Types of cache misses:
Cold (compulsory) miss
Cold misses occur because the cache is empty.
Conflict miss
Most caches limit blocks at level k+1 to a small subset
(sometimes a singleton) of the block positions at level k.
E.g. Block i at level k+1 must be placed in block (i mod 4) at
level k+1.
Conflict misses occur when the level k cache is large enough,
but multiple data objects all map to the same level k block.
E.g. Referencing blocks 0, 8, 0, 8, 0, 8, ... would miss every time.
Capacity miss
Occurs when the set of active cache blocks (working set) is
larger than the cache.
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Examples of Caching in the Hierarchy
Cache Type What is Where is it Latency Managed
Cached? Cached? (cycles) By
Registers 4-byte words CPU core 0 Compiler
TLB Address On-Chip TLB 0 Hardware
translations
L1 cache 64-bytes block On-Chip L1 1 Hardware
L2 cache 64-bytes block Off-Chip L2 10 Hardware
Virtual 4-KB page Main memory 100 Hardware+
Memory OS
Buffer cache Parts of files Main memory 100 OS
Network buffer Parts of files Local disk 10,000,000 AFS/NFS
cache client
Browser cache Web pages Local disk 10,000,000 Web
browser
Web cache Web pages Remote server 1,000,000,000 Web proxy
disks server
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Summary
The memory hierarchy is fundamental consequence
of maintaining the random access memory
abstraction and practical limits on cost and power
consumption.
Caching works!
Programming for good temporal and spatial locality
is critical for high performance.
Trend: the speed gap between CPU, memory and
mass storage continues to widen, thus leading
towards deeper hierarchies.
Consequence: maintaining locality becomes even more
important.
– 45 – 15-213, F’04