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LDMOS

From Wikipedia, the free encyclopedia

LDMOS (laterally-diffused metal-oxide semicconductor)[1] is a planar double-diffused MOSFET (metal–oxide–semicconductor field-effect transistor) used in amplifiers, including microwave power amplifiers, RF power amplifiers and audio power amplifiers. These transistors are often fabricated on p/p+ siliccon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of this power MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.

The siliccon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks,[2][3][4] enabling the majority of the world's cellular voice and data traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to source breakdown voltage usually above 60 volts.[6] Compared to other devices such as GaAs FETs they show a lower maximum power gain frequency.

Manufacturers of LDMOS devices and foundries offering LDMOS technologies include , Tower Semicconductor, TSMC, LFoundry, SAMSUNG, GLOBALFOUNDRIES, Vanguard International Semicconductor Corporation, STMicroelectronics, Infineon Technologies, RFMD, NXP Semicconductors (including former Freescale Semicconductor), SMIC, MK Semicconductors, Polyfet and Ampleon.

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Applications

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Common applications of LDMOS technology include the following.

RF LDMOS

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Common applications of RF LDMOS technology include the following.

See also

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References

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  1. ^ a b A. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
  2. ^ a b c d e Baliga, Bantval Jayant (2005). Siliccon RF Power MOSFETS. World Scientific. pp. 1–2. ISBN 9789812561213.
  3. ^ a b c d e f g h Asif, Saad (2018). 5G Mobile Communications: Concepts and Technologies. CRC Press. p. 134. ISBN 9780429881343.
  4. ^ a b c d e f g h i j k l Theeuwen, S. J. C. H.; Qureshi, J. H. (June 2012). "LDMOS Technology for RF Power Amplifiers" (PDF). IEEE Transactions on Microwave Theory and Techniques. 60 (6): 1755–1763. Bibcode:2012ITMTT..60.1755T. doi:10.1109/TMTT.2012.2193141. ISSN 1557-9670. S2CID 7695809.
  5. ^ a b c d e f g h i j k "LDMOS Products and Solutions". NXP Semicconductors. Retrieved 4 December 2019.
  6. ^ van Rijs, F. (2008). "Status and trends of siliccon LDMOS base station PA technologies to go beyond 2.5 GHz applications". Radio and Wireless Symposium, 2008 IEEE. Orlando, FL. pp. 69–72. doi:10.1109/RWS.2008.4463430.
  7. ^ a b Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 177-8, 406. ISBN 9780080508047.
  8. ^ "A 600W broadband HF amplifier using affordable LDMOS devices". QRPblog. 2019-10-27. Retrieved 2022-09-28.
  9. ^ a b c "L-Band Radar". NXP Semicconductors. Retrieved 9 December 2019.
  10. ^ a b c d "Avionics". NXP Semicconductors. Retrieved 9 December 2019.
  11. ^ a b c "RF Aerospace and Defense". NXP Semicconductors. Retrieved 7 December 2019.
  12. ^ a b "Communications and Electronic Warfare". NXP Semicconductors. Retrieved 9 December 2019.
  13. ^ a b c d e f g h "Mobile & Wideband Comms". ST Microelectronics. Retrieved 4 December 2019.
  14. ^ a b c d e f "470-860 MHz – UHF Broadcast". NXP Semicconductors. Retrieved 12 December 2019.
  15. ^ a b c d e f "RF LDMOS Transistors". ST Microelectronics. Retrieved 2 December 2019.
  16. ^ a b "28/32V LDMOS: IDDE technology boost efficiency & robustness" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  17. ^ a b c d e f "AN2048: Application note – PD54008L-E: 8 W - 7 V LDMOS in PowerFLAT packages for wireless meter reading applications" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  18. ^ a b c d e f g h i j k "ISM & Broadcast". ST Microelectronics. Retrieved 3 December 2019.
  19. ^ a b c d "700-1300 MHz – ISM". NXP Semicconductors. Retrieved 12 December 2019.
  20. ^ a b "2450 MHz – ISM". NXP Semicconductors. Retrieved 12 December 2019.
  21. ^ a b c d e f g h "1-600 MHz – Broadcast and ISM". NXP Semicconductors. Retrieved 12 December 2019.
  22. ^ a b "28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  23. ^ a b "S-Band Radar". NXP Semicconductors. Retrieved 9 December 2019.
  24. ^ "RF Cellular Infrastructure". NXP Semicconductors. Retrieved 7 December 2019.
  25. ^ a b c d "RF Mobile Radio". NXP Semicconductors. Retrieved 9 December 2019.
  26. ^ "UM0890: User manual – 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors" (PDF). ST Microelectronics. Retrieved 23 December 2019.
  27. ^ a b "915 MHz RF Cooking". NXP Semicconductors. Retrieved 7 December 2019.
  28. ^ a b c Torres, Victor (21 June 2018). "Why LDMOS is the best technology for RF energy". Microwave Engineering Europe. Ampleon. Retrieved 10 December 2019.
  29. ^ a b c "RF Defrosting". NXP Semicconductors. Retrieved 12 December 2019.
  30. ^ "White Paper – 50V RF LDMOS: An ideal RF power technology for ISM, broadcast and commercial aerospace applications" (PDF). NXP Semicconductors. Freescale Semicconductor. September 2011. Retrieved 4 December 2019.
  31. ^ a b "RF Cellular Infrastructure". NXP Semicconductors. Retrieved 12 December 2019.
  32. ^ "450 - 1000 MHz". NXP Semicconductors. Retrieved 12 December 2019.
  33. ^ "3400 - 4100 MHz". NXP Semicconductors. Retrieved 12 December 2019.
  34. ^ "HF, VHF and UHF Radar". NXP Semicconductors. Retrieved 7 December 2019.
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