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BCX38A/B/C BCX38A/B/C: Typical Characteristics

This document summarizes the specifications and characteristics of NPN silicon planar medium power Darlington transistors. The key specifications include: - 60V maximum collector-base voltage - Gain of 10,000 at 0.5A collector current - 1W maximum power dissipation at 25°C ambient temperature The document provides electrical characteristics such as breakdown voltages, saturation voltages, and current transfer ratios. It also includes graphs of typical characteristics such as gain vs collector current and saturation voltage vs collector current. Safe operating areas and thermal impedance are specified. Equations for calculating maximum operating temperature based on power dissipation are also provided.

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78 views3 pages

BCX38A/B/C BCX38A/B/C: Typical Characteristics

This document summarizes the specifications and characteristics of NPN silicon planar medium power Darlington transistors. The key specifications include: - 60V maximum collector-base voltage - Gain of 10,000 at 0.5A collector current - 1W maximum power dissipation at 25°C ambient temperature The document provides electrical characteristics such as breakdown voltages, saturation voltages, and current transfer ratios. It also includes graphs of typical characteristics such as gain vs collector current and saturation voltage vs collector current. Safe operating areas and thermal impedance are specified. Equations for calculating maximum operating temperature based on power dissipation are also provided.

Uploaded by

andreapasitos8340
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt

BCX38A/B/C

C B E

ABSOLUTE MAXIMUM RATINGS.


PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 80 60 10 2

E-Line TO92 Compatible VALUE UNIT V V V A mA W C

800 1 -55 to +200

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).


PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio BCX38A BCX38B BCX38C SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 500 1000 2000 4000 5000 10000 3-20 MIN. 80 60 10 100 100 1.25 1.8 TYP. MAX. V V V nA nA V V UNIT CONDITIONS. IC=10 A, IE=0 IC=10mA, IB=0 IE=10 A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800mA, IB=8mA* IC=800mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V*

BCX38A/B/C
TYPICAL CHARACTERISTICS
IC/IB=100 1.0 1.6 -55C +25C 0.6 +100C 0.4 +175C +100C VCE=5V

0.8

hFE - Normalised Gain

1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 -55C +25C

VCE(sat) - (Volts)

0.2 0.001

0.01

0.1

10

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VCE(sat) v IC

hFE v IC

IC/IB=100 2.0 2.0

VCE=5V

VBE(sat) - (Volts)

VBE - (Volts)

-55C 1.5 +25C 1.0 +100C +175C 0.5 0.001 0.01 0.1 1 10

-55C 1.5 +25C 1.0 +100C +175C 0.01 0.1 1 10

0.5 0.001

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VBE(sat) v IC
10

VBE(on) v IC
Single Pulse Test at Tamb=25C

D=1 (D.C.)

Thermal Resistance (C/W)

IC - Collector Current (Amps)

150

100
D=0.5

50
D=0.2 D=0.1 D=0.05 Single Pulse

0.1

0 0.0001

D.C. 1s 100ms 10ms 1.0ms 0.1ms

0.001

0.01

0.1

10

100 0.01 1 10 100 1000

Pulse Width (seconds)

Maximum transient thermal impedance

VCE - Collector Voltage (Volts)

Safe Operating Area

3-21

BCX38A/B/C
The maximum permissable operational temperature can be obtained using the equation:
1.0 0.8 RS10k RS=47k RS=1M 0.6 RS=

Maximum Power Dissipation - (W)

T amb (max ) =

Power (max ) Power (actual ) + 25 C 0.0057

Tamb(max)= Maximum operating ambient temperature Power (max) = Maximum power dissipation figure, for a given VCE and source resistance (RS)

0.4 0.2 1 10

100

Power (actual) = Actual power dissipation in users circuit

VCE - Collector-Emitter Voltage - (V)

3-22

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