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2N671x Transistors

This document provides specifications for two NPN silicon planar medium power transistors, the 2N6714 and 2N6715. Key features include a collector-emitter voltage rating of 30-40V, continuous collector current rating of 1A, and power dissipation of 1W at 25°C ambient temperature. Electrical characteristics including saturation voltage, turn-on voltage, current transfer ratio, and transition frequency are provided. The transistors are intended for general purpose medium power applications and are compatible with the TO-92 package.

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Adam Ahmat
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31 views1 page

2N671x Transistors

This document provides specifications for two NPN silicon planar medium power transistors, the 2N6714 and 2N6715. Key features include a collector-emitter voltage rating of 30-40V, continuous collector current rating of 1A, and power dissipation of 1W at 25°C ambient temperature. Electrical characteristics including saturation voltage, turn-on voltage, current transfer ratio, and transition frequency are provided. The transistors are intended for general purpose medium power applications and are compatible with the TO-92 package.

Uploaded by

Adam Ahmat
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS


ISSUE 1 - MARCH 94
FEATUPES
40 VolI V
CEO
Gaih oI 50 aI
C
= 1 Amp
P
IoI
= 1 WaII
ABSOLUTE MAXIMUM RATINGS.
PAPAMETEP SYMBOL 2N6714 2N6715 UNT
CollecIor-Base VolIage V
CBO
40 50 V
CollecIor-EmiIIer VolIage V
CEO
30 40 V
EmiIIer-Base VolIage V
EBO
5 V
Peak Pulse CurrehI
CM
2 A
CohIihuous CollecIor CurrehI
C
1 A
Power DissipaIioh aI T
amb
= 25C P
IoI
1 W
OperaIihg ahd SIorage TemperaIure Pahge T
|
:T
sIg
-55 Io +200 C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unIess otherwise stated).
PAPAMETEP SYMBOL 2N6714 2N6715 UNT CONDTONS.
MN. MAX. MN. MAX.
CollecIor-Base
Breakdowh VolIage
V
(BP)CBO
40 50 V
C
=1mA,
E
=0
CollecIor-EmiIIer
Breakdowh VolIage
V
(BP)CEO
30 40 V
C
=10mA,
B
=0
EmiIIer-Base
Breakdowh VolIage
V
(BP)EBO
5 5 V
E
=1mA,
C
=0
CollecIor CuI-OII
CurrehI

CBO
0.1
0.1
A
A
V
CB
=40V,
E
=0
V
CB
=50V,
E
=0
EmiIIer CuI-OII
CurrehI

EBO
0.1 0.1 A V
EB
=5V,
C
=0
CollecIor-EmiIIer
SaIuraIioh VolIage
V
CE(saI)
0.5 0.5 V
C
=1A,
B
=100mA
Base-EmiIIer
Turh-Oh VolIage
V
BE(oh)
1.2 1.2 V C=1A, V
CE
=1V
SIaIic Forward
CurrehI TrahsIer
PaIio
h
FE
55
60
50 250
55
60
50 250

C
=10mA, V
CE
=1V

C
=100mA, V
CE
=1V

C
=1A, V
CE
=1V
TrahsiIioh
Frequehcy
I
T
50 500 50 500 MHz
C
=50mA, V
CE
=10V
CollecIor Base
CapaciIahce
C
CB
30 30 pF V
CE
=10V, I=1MHz
Measured uhder pulsed cohdiIiohs. Pulse widIh=300s. DuIy cycle 2%
E-Line
TO92 CompatibIe
2N6714
2N6715
3-5
C
B
E

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