Bandgap and current reference circuits

Willy Sansen
KULeuven, ESAT-MICAS Leuven, Belgium
willy.sansen@esat.kuleuven.be
Willy Sansen
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161

Voltage regulator
VDD Vout R1 + R2 R2

R1

Vout = Vref

Vref

R2

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162

Current regulator
Iout + V1 + Iout

+ R

V2

Vref Vref R

Iout =

Iout =

V1 - V2 R
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Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B.Gilbert, G.Meijer, ACD , Kluwer 1995

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164

Bipolar transistor equations

IB + VBE IC = IS exp ( or IC = VBE kT/q ( ) )

CT exp

VBE - Vg0 kT/q

- 2 mV/oC

with Vg0 = 1268 mV - kTr/q

- 2 V/oC

and Tr = 323 K for IC ~ Tm

which gives VBE = Vg00 - T + c(T)

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VBE versus Temperature

VBE Vg00 Vg0 c(T) VBE VBE = Vg00 - T + c(T) for IC ~ Tm Vg00 = Vg0 + (-m) kTr/q = Vg00 - VBE (Tr) Tr

Tr

T k ) c(T) = (-m) (T -Tr -T ln q Tr tg = Vg0 = 1156 mV = 4 T T = 300 K

VBE(Tr) = 700 mV
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The curvature c(T)

VBE (V)
m=1 IC ~ T m=0 IC constant IC ~ VBE VBE = 0.7 mV T = 30o VBE = 5 mV T = 50o

T (K)
m=1 m=0 m= IC ~ T IC constant IC ~ VBE gm constant gm ~ T-1 gm ~ T-x
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Bandgap reference Vref

VBE Vg00
- 2 mV/oC

Vref 1.2 V VC 0.6 V is PTAT VBE 0.6 V 0 Vref = VBE + VC Tr VC kT ~ q T

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PTAT voltage and current

IC = IS exp ( VBE kT/q ) IC kT VBE = ln q IS

VBE = VBE1 - VBE2 IC Q1 1: r IC Q2 + V IS2 kT VBE = ln q IS1 kT VBE = ln r q

r is 10-1000 !!
Willy Sansen
10-05

BE

R2

kT IC = ln r qR2

169

Bandgap reference circuit

n: 1
Q4 Q3

VBE Vg00
- 2 mV/oC

1.2 V

PTAT 0.6 V VBE

+ +
VC Vref

R1 0
Q2

Q1

Tr

1: r

+ V

BE

kT VBE = ln nr q Vref = VBE + VC

R2

A kT IC2 = ln nr = qR2 R2 R1 kT VC = n ln nr R2 q
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Noise Bandgap reference - 1

n: 1
Q4 Q3

A kT IC2 = ln nr = qR2 R2

kT A= ln nr 0.12 V q

+ +
VC Vref

R1

IC2

R1 R1 kT VC = n ln nr = n A = nR1IC2 0.6 V R2 R2 q
R1 >> 1/gm1 R1IC1 0.5 V gm1R1 20

Q1 Q2

R2 >> 1/gm2 R2IC2 0.06 V gm2R2 2.3

BE

1: r

+ V

R2

Noise sources : R1 R2
gm3,4 negligible for large VGS -VT or RE !!

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Noise Bandgap reference - 2

n: 1
Q4 Q3

A kT IC2 = ln nr = qR2 R2

kT A= ln nr 0.12 V q

+ +
VC Vref

R1

Q1

1: r

dVRef2 = 4kT R1 df + R12n2 4kT/R2 df R1 2 Q2 = 4kT R1 df (1 + n ) R2 + V BE nVC n VC R1 2 n R2 n = R1n = = >> 1 R2 R2 IC2 VBE R2 Willy Sansen
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IC2

R1 R1 kT VC = n ln nr = n A = nR1IC2 0.6 V R2 R2 q

1612

Noise Bandgap reference - 3

n: 1
Q4 Q3

dVRef

2=

R1 2 4kT R1 n df R2

+ +
VC Vref

R1

IC2

2 2 2 V V C (R n) 1 C R1 2 1 R1 = n = = 2 R2 IC2 R2 IC2 VBE R2

Q1 Q2

VC 0.6 V :
BE

1: r

+ V

>> >>

Large IC2 : small Rs Large r : large VBE

R2

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Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B. Gilbert, G.Meijer, ACD , Kluwer 1995

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Bandgap reference with bipolar transistors

Insensitive to and VE ! kT VBE = ln nr q kT IC = ln nr qR2

n: 1 R1

2Vref 1: r 2R3 R2

Vref = 2VBE + VR3 1 1 kT VR3 = 2R3 ( + ) ln nr R1 R2 q

Ref.: G.Meijer, ACD , Kluwer 1995
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Start-up circuits required

1 : 1
Q4 Q3

IC IC1
unwanted operating point IC2 required operating point
Q2

+
Vref
Q1

IC1

IC2

R1

VBE1 Vref = VBE1 + R1 kT R2 q ln r

1616

1: r

R2

Willy Sansen

10-05

Start-up circuits
D1 D2

Cstart

RSTART

R3 Q4 Q3 Q1

R1

R3

R1

D2
Q2 Q2 Q1

r: 1
R2

4x

r: 1
R2
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Bipolar Bandgap reference without opamp

R1

IC

R1

VOUT IC Q2 Q3

VOUT = VBE1 + R1 IC = VBE1 + R1 kT R2 q ln r

Q1 1: r

R2
Ref. Widlar, JSSC Feb.1971, 2-7
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All NPN bipolar bandgap reference

Ref.: B.Gilbert, ACD , Kluwer 1995

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Bipolar Bandgap references with opamps

R +

1:n + Vref R

RPTAT + R

RPTAT

+ Vref

1:n

Bad PSRR
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CMOS Bandgap ref.with opamp: error analysis 1

Q1 1:n Q2 RPT + R R IC = kT qRPT ln n A= R RPT

Vref = VBE + A (VBE1 - VBE2) + Vref kT dIC dIS dVBE = ( ) q IC IS kT 1 dn dRPT dIS = ( ) RPT q ln n n IS is PTAT !

= 26 mV (0.46 2% - 30 % - 20%) 13 mV (if n = 10)

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CMOS Bandgap ref.with opamp: error analysis 2

Q1 1:n Q2 RPT + R R Vref = VBE + A (VBE1 - VBE2) kT VBE1 - VBE2 = ln n q kT dn d(VBE1 - VBE2) = q n d[A(VBE1 - VBE2)] = 1 dn kT dA =A ln n ( + ) q A ln n n is PTAT !
24 mV or 2%
Willy Sansen
10-05

= 600 mV (1 % + 0.46 2% ) 11 mV

1622

Bipolar Bandgap reference AD580

VIN R R + 1:8

VOUT = Vref

R3 + R4 R3

R4 Vref = VBE + VR1 R3 = VBE + 2 = VBE + 2 1.205 V

+ R2 VR2 + R1 VR1

R1 R2

VR2 ln 8

R1 kT R2 q

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Curvature correction with VBE

VBE (V) m=0 constant current
stronger curvature

m=1 PTAT current

ratio /(-1) or 1/a2 = 3.5 a2 0.714

Vref 210 mV

Ref. Widlar, Meijer, van Staveren

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Curvature correction with VBE

IB (const) 1.5 + 7 + 7 A
1.5 A R1 7 A I(PTAT) R2 7 A

I (const)

Vref = VBE2 + R2 I (VBE) - R1(I (const) + I (PTAT)) - VBE1 VPTAT + AVBE2

I (VBE)
R4 R5

+ Vref
210 mV

Q1 R3

Q2

Ref. Widlar JSSC Dec.78, 838-846

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Curvature correction with PTAT2

R2 kT Vref = VBE3 + ln r + T2 R1 q
translinear circuit

1: 1

+ R2 IPTAT2

IPTAT

Q3

R1
Q2

IPTAT
Q1

IB

Ref. Song JSSC Dec.83, 634-643, Degrauwe ISSCC Febr.85, 142-143

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Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B.Gilbert, G.Meijer, ACD , Kluwer 1995

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N-well CMOS technology

Gate oxyde Polysilicon gate

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CMOS Bandgap reference with opamp

1:1 R R + +

+ Vref Vref RPT n:1

RPTAT n:1

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Full CMOS bandgap reference circuit

2.7 ... 5.5 V 17 A
PDII PDI

1.2 0.02 V 10 A max.

4000 ppm -50 oC +150 oC

Startup
Ref. MIETEC; Meijer, ACD, Kluwer 1995
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Bandgap reference with high PSRR

1 : 1 : N 2.4 V > 2.5 V 300 A

1.2 V

1.2 V

1.236 V 20 mV 85 ppm/oC

VBG = VBE2 + N

R2 kT R1 q

ln [M (N+1)]

Ref.Tham, JSSC, May 95, pp.586-590

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Floating CMOS bandgap reference

2.48 V 24 mV 21 ppm/oC 5 V 1.2 mA

Ref.Ferro, JSSC, June 89, pp.690-697
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CMOS Bandgap without resistors

VD = VD2 - VD1 VOUT = VD2 + AG VD VOUT 1.12 V 9 mV 0 70 oC 3.7 V; 0.4 mA
A = 1.5 B=4 G=6 AD1/AD2 = 8
Ref.: Buck, JSSC Jan. 2002, 81-83
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Single-junction CMOS Bandgap reference

IB1 Sw2 IB2 +

t1: open t2: open t3: closed

Sw1 C1 C2

Vout ~ VBE

t1: closed : Vout = VBE1 t2: open C1+C2 t3: open + V

C2

BE21

Ref. Gilbert, ACD, Kluwer 1995

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MOST in weak inversion ?

IB + VGS IDS = IDS0 exp ( VGS nkT/q CD Cox )

-2

mV/oC

n=1+

- 20 V/oC

CD (VCB)

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Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B. Gilbert, G.Meijer, ACD , Kluwer 1995

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Sub-1 V CMOS bandgap reference

VBE

R3

R2 R4

518 mV 15 mV

Vref

R4 kT = VBE + ln n R3 q R2 R4

n = 100
Banba, .., JSSC May 99, 670-673
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CMOS Bandgap with supply < 1 V

Vref = R3 R2 VBE + 1 : 1 1 : 1
1V 92 A

R3 kT ln n R0 q IPTAT R0 +

Vref +
0.536 V

Ref.: Malcovati, JSSC July 01, 1076-1081

kT ln n q R0 R2 = R1
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R3

R1

1638

1 V opamp (1.2 MHz 25 pF 35 A)

VB Vout

Cc Vin+ Vin-

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Start-up circuit
1 : 1 1 : 1

VB

MS R0

Vref +
0.536 V

R1

R2 = R1
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Curvature correction
1 : 1 1 : 1
1V 92 A

VB R0

+ R5

R4 VBE I(ct)

Vref +
0 oC 80oC 0.8mV

I(ct)

IPTAT

R1

R2 = R1
Willy Sansen
10-05

0.3mV

1641

CMOS Bandgap with supply < 1 V

Vref = R3 R2 VBE 1 : 1 1 : 1
1V 18 A

R3 kT ln n + R1 q

+ R2a R1 R2a

Vref +
0.603 V

R3 R2b
Willy Sansen

Ref.: Leung, JSSC 1 April 2002, 526-530

R2b

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Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B. Gilbert, G.Meijer, ACD , Kluwer 1995

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Voltage-current converter
Iout + Iout = Vref R

Temperature coefficient : Vref R depends on Vref R!

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Temperature coefficient of resistors

cm-3

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Voltage to current converter

Blauschild, ACD Kluwer 1995

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Current reference without resistors

a:1 Iref IC
unwanted operating point

IM2 IM1
required operating point Iref

M1

V2

M2

VT1

VT2+V2

VBE1 V2 2 1 m= ab

1:b Kn ~ T -1.5 V2 ~ T V2 0.32 V

Iref = Kn

W1

L1 (1 - m)2

Iref ~ T -0.5

Vcc > 3.5 V 2 A 0.774 0.02 A 3 % 0o ... 80oC

Willy Sansen
10-05

Ref. Op t Eynde, JSSC June 88, pp. 821-824

1647

Current reference

Sb nkT Vo = ln (1 + ) Sa q Sb/Sa = 5 Vo 64 mV

Vo

Both in wi. Vcc > 3.5 V 2 A 0.774 0.02 A 3 % 0o ... 80oC

V2 0.32 V

Ref. Vittoz, JSSC June 79, pp. 573-577

Ref. Op t Eynde, JSSC June 88, pp. 821-824

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SC Voltage-current converter

Vref C1 = Iref Tc/2 1 Reff = 2fcC1 Iref =

C1 = C2 = 3 pF fc = 270 kHz 5 V 4 A
Ref. H.Klein, W. Engl, ESSCIRC 83, pp. 119-122
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Vref Reff

1649

Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B. Gilbert, G.Meijer, ACD , Kluwer 1995

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1650

Low drop-out regulator : principle

Vin = 3.1 V Vout = 2 V Vin = 2.2 V Vout = 2 V

R1 2.9 V R2 +

R1 1.3 V Gain ! R2

Vref

Vref R1 + R2 R2
Willy Sansen

VGS 0.9 V

Vout = Vref

10-05

1651

Table of contents

Principles Bipolar bandgap references CMOS bandgap references Bandgap references < 1 V Current references LDO Regulators

Ref.: B. Gilbert, G.Meijer, ACD , Kluwer 1995

Willy Sansen
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References
P. Brokaw, A simple three-terminal IC bandgap reference JSSC Dec.74, pp.388-393 M. Degrauwe, etal, CMOS voltage references using lateral bipolar transistors, JSSC Dec.85, pp.1151-1157 K. Kuijk, A presicion reference voltage source JSSC June 1973, pp.222-226 G. Meijer etal An integrated bandgap reference, JSSC June 76, pp.403-406 G. Meijer etal A new curvature-corrected bandgap reference JSSC Dec.82, pp.1139-143 G. Meijer, Bandgap references, ACD Kluwer, 1995 B. Song, P.Gray, A precision curvature-compensated CMOS bandgap reference JSSC Dec.83, pp.634-643 A. van Staveren etal An integratible second-order compensated bandgap reference for 1 V supply, ACD Kluwer 1995. R. Widlar, New developments in IC Voltage Regulators, JSSC Febr.71, pp. 2-7. R. Widlar, Low-voltage techniques, JSSC Dec.78, pp.838-846.

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