2N3819

Siliconix
P-37407Rev. B (07/04/94)
1
NChannel JFETs
Product Summary
V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
DSS
Min (mA)
v-8 -25 2 2
Features Benefits Applications
D Excellent HighFrequency Gain:
Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch OffIsolation
D High Gain: A
V
= 60 @ 100 mA
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D HighSpeed Switching Capability
D High LowLevel Signal Amplification
D HighFrequency Amplifier/Mixer
D Oscillator
D SampleandHold
D Very Low Capacitance Switches
Description
The 2N3819 is a lowcost, allpurpose JFET which offers
good performance at midtohigh frequencies. It
features low noise and leakage and guarantees high gain
at 100 MHz.
Its TO226AA (TO92) package is compatible with
various tapeandreel options for automated assembly
(see Packaging Information). For similar products in
TO206AF (TO72) and TO236 (SOT23) packages,
see the 2N4416/2N4416A/SST4416 data sheet.
1
TO226AA
(TO92)
Top View
S
D
G 2
3
Absolute Maximum Ratings
GateSource/GateDrain Voltage -25 V . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature -55 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature -55 to 150_C . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.) 300_C . . . . . . . . . . . .
Power Dissipation
a
350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
2N3819
Siliconix
P-37407Rev. B (07/04/94)
2
Specifications
a
Limits
Parameter Symbol Test Conditions Min Typ
b
Max Unit
Static
GateSource Breakdown Voltage V
(BR)GSS
I
G
= -1 mA , V
DS
= 0 V -25 -35
V
GateSource Cutoff Voltage V
GS(off)
V
DS
= 15 V, I
D
= 2 nA -3 -8
V
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V 2 10 20 mA
Gate Reverse Current I
GSS
V
GS
= -15 V, V
DS
= 0 V -0.002 -2 nA
Gate Reverse Current I
GSS
T
A
= 100_C -0.002 -2 mA
Gate Operating Current
d
I
G
V
DG
= 10 V, I
D
= 1 mA -20
pA
Drain Cutoff Current I
D(off)
V
DS
= 10 V, V
GS
= -8 V 2
pA
DrainSource OnResistance r
DS(on)
V
GS
= 0 V, I
D
= 1 mA 150 W
GateSource Voltage V
GS
V
DS
= 15 V, I
D
= 200 mA -0.5 -2.5 -7.5
V
GateSource Forward Voltage V
GS(F)
I
G
= 1 mA , V
DS
= 0 V 0.7
V
Dynamic
CommonSource Forward Transconductance
d
g
fs
V 15 V V 0 V
f = 1 kHz 2 5.5 6.5
mS CommonSource Forward Transconductance
d
g
fs
V
DS
= 15 V, V
GS
= 0 V f = 100 MHz 1.6 5.5
mS
CommonSource Output Conductance
d
g
os
f = 1 kHz 15 50 mS
CommonSource Input Capacitance C
iss
V
DS
= 15 V V
GS
= 0 V f = 1 MHz
2.2 8
pF
CommonSource Reverse Transfer Capacitance C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
0 . 7 4
pF
Equivalent Input Noise Voltage
d
e
n
V
DS
= 10 V, V
GS
= 0 V, f = 100 Hz 6
nV
Hz
Notes
a. T
A
= 25_C unless otherwise noted. NH
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PWv300 ms, duty cycle v2%.
d. This parameter not registered with JEDEC.
Typical Characteristics
OnResistance and Output Conductance
vs. GateSource Cutoff Voltage
500
0 -10 -6
300
0
50
30
0
r
D
S
(
o
n
)
-

D
r
a
i
n

S
o
u
r
c
e

O
n

R
e
s
i
s
t
a
n
c
e

(
)
W
r
DS
g
os
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
Drain Current and Transconductance
vs. GateSource Cutoff Voltage
20
0 -10
0
10
0
-

S
a
t
u
r
a
t
i
o
n

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
S
S
g
f
s
-

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
I
DSS
g
fs
V
GS(off)
- GateSource Cutoff Voltage (V)
40
20
10
400
100
200
-2 -4 -8
V
GS(off)
- GateSource Cutoff Voltage (V)
6
8
4
2
-6 -2 -4 -8
12
16
4
8
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
g
fs
@ V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
S
)
g
o
s
-

O
u
t
p
u
t

C
o
n
d
u
c
t
a
n
c
e

(
m
2N3819
Siliconix
P-37407Rev. B (07/04/94)
3
Typical Characteristics (Cont'd)
10
0
2
8
6
4
Gate Leakage Current
0 10 20
5 mA
0.1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA
-

G
a
t
e

L
e
a
k
a
g
e
I
G
0.1 mA
I
GSS
@ 25_C
T
A
= 25_C
T
A
= 125_C
5 mA
I
GSS
@
125_C
Output Characteristics Output Characteristics
CommonSource Forward Transconductance
vs. Drain Current
0.1 1 10
10
2
0
g
f
s
-

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
V
GS(off)
= -3 V
T
A
= -55_C
125_C
10
0 4 10
0
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.2 V
-1.4 V
-1.0 V
V
GS
= 0 V
15
0 10
0
-0.6 V
-0.9 V
-1.2 V
-1.5 V
-1.8 V
V
GS
= 0 V
-0.3 V
V
DG
- DrainGate Voltage (V) I
D
- Drain Current (mA)
V
DS
- DrainSource Voltage (V) V
DS
- DrainSource Voltage (V)
-

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
-

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
V
GS
- GateSource Voltage (V)
-

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
Transfer Characteristics
V
GS(off)
= -2 V
T
A
= -55_C
125_C
V
GS
- GateSource Voltage (V)
-

D
r
a
i
n

C
u
r
r
e
n
t

(
m
A
)
I
D
Transfer Characteristics
T
A
= -55_C
125_C
V
GS(off)
= -3 V
8
6
4
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= -2 V V
GS(off)
= -3 V
2
8
6
4
2 6 8 4 2 6 8
3
12
9
6
V
DS
= 10 V V
DS
= 10 V
10
0
2
8
6
4
0 -0.8 -2 0 -3 -0.4 -1.2 -1.6 -1.2 -0.6 -1.8 -2.4
1 mA
1 mA
25_C
25_C
25_C
2N3819
Siliconix
P-37407Rev. B (07/04/94)
4
Typical Characteristics (Cont'd)
V
GS
- GateSource Voltage (V)
Transconductance vs. GateSource Voltage
10
0 -0.8 -2
8
0
V
GS(off)
= -2 V
T
A
= -55_C
125_C
g
f
s
-

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
V
GS
- GateSource Voltage (V)
Transconductance vs. GateSource Voltgage
10
-3 -0.6 0
0
T
A
= -55_C
125_C
V
GS(off)
= -3 V
g
f
s
-

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
S
)
I
D
- Drain Current (mA) I
D
- Drain Current (mA)
OnResistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
0.1 1 10
300
0
T
A
= -55_C
r
D
S
(
o
n
)
-

D
r
a
i
n

S
o
u
r
c
e

O
n

R
e
s
i
s
t
a
n
c
e

(
)
W
-3 V
V
GS(off)
= -2 V
10 0.1
100
0
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
V
GS(off)
= -2 V
-3 V
A
V
-

V
o
l
t
a
g
e

G
a
i
n
CommonSource Input Capacitance
vs. GateSource Voltage
CommonSource Reverse Feedback
Capacitance vs. GateSource Voltage
5
0 -20 -4
0
-

I
n
p
u
t

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
i
s
s
f = 1 MHz
V
DS
= 0 V
V
DS
= 10 V
3.0
0 -20
0
-

R
e
v
e
r
s
e

F
e
e
d
b
a
c
k

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
r
s
s
V
DS
= 0 V
V
DS
= 10 V
V
GS
- GateSource Voltage (V) V
GS
- GateSource Voltage (V)
f = 1 MHz
V
DS
= 10 V
f = 1 kHz
V
DS
= 10 V
f = 1 kHz
6
4
2
240
180
120
60
8
6
4
2
80
60
40
20
1
-0.4 -1.6 -1.2
-1.2 -1.8 -2.4
4
3
2
1
-8 -12 -16 -4 -8 -12 -16
2.4
1.8
1.2
0.6
A
V
+
g
fs
R
L
1 ) R
L
g
os
25_C 25_C
2N3819
Siliconix
P-37407Rev. B (07/04/94)
5
Typical Characteristics (Cont'd)
Reverse Admittance Output Admittance
Input Admittance Forward Admittance
100
10
1
0.1
100 1000
b
is
g
is
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(
m
S
)
100
10
1
0.1
100
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
(
m
S
)
-b
is
g
fs
10
1
0.1
0.01
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
-b
rs
-g
rs
10
1
0.1
0.01
T
A
= 25_C
V
DS
= 15 V
V
GS
= 0 V
Common Source
b
os
g
os
f - Frequency (MHz) f - Frequency (MHz)
f - Frequency (MHz) f - Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
10 100 1 k 100 k 10 k
20
0
n
V
e
n

H
z

)
(
-

N
o
i
s
e

V
o
l
t
a
g
e
I
D
= 5 mA
V
DS
= 10 V
20
0
0.1 1 10
T
A
= -55_C
125_C
V
GS(off)
= -3 V
S
)
g
f
s
-

F
o
r
w
a
r
d

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
m
I
D
- Drain Current (mA) f - Frequency (Hz)
(
m
S
)
(
m
S
)
200 500 1000 200 500
100 1000 100 200 500 1000 200 500
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= -3 V
16
12
8
4
16
12
8
4
I
D
= I
DSS
25_C