140 Thin-Film Evaporation Processes

emission from point or surface sources, and substrate reception based on the
inverse square separation distance between the two. Film uniformity and
coverage become more problematical over substrates that are stepped or
contain trenches and other complex topographies. In addition to line-of-
sight shadowing, atomic diffusional effects determine the extent of film
coverage. Lastly, the vacuum space and partial pressures of residual gases
within it have an influence on film purity and properties such as resistivity,
reflectivity, and hardness.
Evaporation techniques for thin-film deposition have been superseded in
many instances by sputtering and chemical vapor deposition methods;
difficulties in maintaining stoichiometry and achieving conformal coverage
are among the reasons for this. Paradoxically, however, pulsed-laser deposi-
tion enables excellent stoichiometry to be attained in complex oxide films.
Despite shortcomings, evaporation methods are readily scalable to large
operations such as web coating. However, in addition to conventional
applications, the versatility of evaporation techniques is exploited in the
demanding arena of molecular beam epitaxy as well as in hybrid deposition
processes that employ plasmas, ion beams, and reactive gases. These
processes and applications will be discussed in Chapters 5 and 8.

EXERCISES
1. (a) Employing vapor-pressure data, calculate values for the molar heat
of vaporization of Si and Ga.
(b) Design a laboratory procedure to experimentally determine the
value of the heat of vaporization of a metal employing common
thin-film deposition and characterization equipment.

2. Suppose Fe satisfactorily evaporates from a surface source, 1 cm in

area, which is maintained at 1550°C. Higher desired evaporation rates
can be achieved by raising the temperature 100°C, but this burns out
the source. Instead, the melt area is increased without raising its
temperature. By what factor should the source area be enlarged to
achieve equivalent deposition?

3. A molecular-beam epitaxy system contains separate Al and As effusion

evaporation sources of 4 cm area, located 10 cm from a (100) GaAs
substrate. The Al source is heated to 1000°C, and the As source is
heated to 300°C. What is the growth rate of the AlAs film in Å/s? Note:
AlAs basically has the same crystal structure and lattice parameter
(5.661 Å) as GaAs.
Exercises 141

4. How far from the substrate, in the illustrative problem on p. 110, would
a single surface source have to be located to maintain the same
deposited film thickness tolerance?
5. An Al film was deposited at a rate of :1 m/min in vacuum at 25°C,
and it was estimated that the oxygen content of the film was 10\. What
was the partial pressure of oxygen in the system?
6. In order to deposit films of the alloy YBa Cu , the metals Y, Ba, and
 
Cu are evaporated from three point sources. The latter are situated at
the corners of an equilateral triangle whose side is 20 cm. Directly above
the centroid of the source array, and parallel to it, lies a small substrate;
the deposition system geometry is effectively a tetrahedron, each side
being 20 cm long.
(a) If the Y source is heated to 1740 K to produce a vapor pressure of
10\ torr, to what temperature must the Cu source be heated to
maintain film stoichiometry?
(b) Rather than a point source, a surface source is used to evaporate
Cu. How must the Cu source temperature be changed to ensure
deposit stoichiometry?
(c) If the source configuration in part (a) is employed, what minimum
O partial pressure is required to deposit stoichiometric supercon-

ducting oxide YBa Cu O films by a reactive evaporation process?
  
The atomic weights are Y : 89, Cu : 63.5, Ba : 137, and O : 16.
7. One way to deposit a thin metal film of known thickness is to heat an
evaporation source to dryness (i.e., until no metal remains in the
crucible). Suppose it is desired to deposit 5000 Å of Au on the internal
spherical surface of a hemispherical shell measuring 30 cm in diameter.
(a) Suggest two different evaporation source configurations (source
type and placement) that would yield uniform coatings.
(b) What weight of Au would be required for each configuration,
assuming evaporation to dryness?
8. (a) Consider the heating of a room-temperature polymer substrate
during deposition of 10 aluminum atoms per cm per minute. The
temperature of the evaporant is 1400 K, the heat of condensation of
Al is 310 kJ/mol, and the emissivity of the Al source is assumed to
be 0.2. Calculate the thermal power delivered to the substrate
through condensation, evaporant kinetic energy, and radiation.
(b) If the polymer density, heat capacity, and thickness are 1.3 g/cm,
1.5 J/g-K, and 0.1 mm, respectively, to what temperature would the
substrate rise after 1 minute?
(c) This polymer is now used in a web coating operation where it will
experience the same Al flux. For an exposed web length of 30 cm,
142 Thin-Film Evaporation Processes

how fast should the web travel for the temperature not to rise above
that calculated in part (b)?
Assume the heat transfer coefficient between web and roll is 200
W/m-K.
9. A tungsten evaporation source is rated at 1000 W and operates at 120 V.
If the filament heater wire is 20 cm long and 0.75 mm in diameter
estimate the temperature (T ) the source will reach when powered.
Compare your answer with an alternative estimate of the temperature
assuming all of the input electrical power dissipated is thermally
radiated from the filament surface.
10. The measured specific energy required for the evaporation of zirconium
is reported to be 61.5 kW-h/kg. If the metal was electron-beam melted in
a 100-mm-diameter water-cooled copper crucible, how does this energy
compare with that predicted in the text? Assume the thermal conductiv-
ity of Zr is 30 W/K-m, and the average charge thickness is 1 cm.
11. Calculate the crossover temperature for silicon, i.e., where the energy
transfer by radiation equals that by evaporation. Assume the emissivity
of Si : 0.7.
Questions 12 to 16 are related to the evaporation geometry shown in Fig. 3-6.
12. The collection efficiency for a given deposition process is the ratio of the
amount of material that falls on a substrate of given size relative to the
total amount evaporated. Derive a formula for the collection efficiency
from a planar source as a function of 1/d and plot the results. Repeat
for the point source. Which source yields a greater collection efficiency?
13. Assume that an evaporation source is highly directional such that
dM 11M cos cos 
:  .
dA 2r

Plot the deposited film profile and compare it to those for the point and
surface sources.
14. Two small area evaporation sources are 100 cm apart and situated
50 cm below a planar substrate. The line between the sources is parallel
to that of the substrate plane. One source evaporates material A while
the second source evaporates material B. Suppose the vapor pressure of
A is 10 times that of B at the evaporation temperature of 1300 K.
(a) At what distance along the substrate will the film composition be 60
at.%A—40 at.%B?
(b) If the vapor pressure of A is 15 times that of B at an evaporation
temperature of 1500 K, what is the difference between the heats of
vaporization for A and B?