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Pmos and Cmos

A PMOS transistor is built with a p-channel between two p-type wells beneath source and drain electrodes on an n-type substrate. The structure is similar to an NMOS transistor but with p-type and n-type materials reversed. A PMOS operates opposite to an NMOS - it requires a negative gate voltage to induce the p-channel and a negative drain-source voltage for current to flow from source to drain. PMOS and NMOS transistors are often combined in a CMOS (complementary MOS) configuration to build digital circuits.

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305 views3 pages

Pmos and Cmos

A PMOS transistor is built with a p-channel between two p-type wells beneath source and drain electrodes on an n-type substrate. The structure is similar to an NMOS transistor but with p-type and n-type materials reversed. A PMOS operates opposite to an NMOS - it requires a negative gate voltage to induce the p-channel and a negative drain-source voltage for current to flow from source to drain. PMOS and NMOS transistors are often combined in a CMOS (complementary MOS) configuration to build digital circuits.

Uploaded by

Viet Nguyen
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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You are on page 1/ 3

10/10/2005

PMOS and CMOS

1/3

PMOS and CMOS


In addition to an n-channel MOSFET device (i.e., NMOS), we
can build p-channel MOSFET (i.e., PMOS) device.
The structure of a PMOS device is essentially the same as an
NMOS transistor, except that wherever there was n-type
Silicon there is now p-type Siliconand wherever there was
p-type Silicon there is now n-type Silicon!
Specifically, the PMOS channel is part of a n-type substrate
lying between two heavily doped p+ wells beneath the source
and drain electrodes.
Generally speaking, a PMOS transistor is only constructed in
consort with an NMOS transistor. This pair of NMOS and
PMOS transistors is known as Complementary MOSFETs
CMOS for short!

Jim Stiles

The Univ. of Kansas

Dept. of EECS

10/10/2005

PMOS and CMOS

2/3

The operation of a PMOS transistor is in many ways similar to


that of the NMOS device, but in many ways they are also
quite different!
For example, for a PMOS device we find:
* To create an inversion layer in the n-type substrate,
we must attract holes to the gate electrode.
* As a result, a p-type channel will be induced,
connecting the p+ wells at the drain and the source.
* However, to attract holes toward the gate, the voltage
vGS must be sufficiently negative! The threshold voltage
Vt is thus a negative value, so that a channel is induced
only if vGS < Vt (i.e., vGS is more negative than VtI).
* As a result, a channel is induced in a PMOS device only
if the excess gate voltage vGS Vt is negative (i.e.,

vGS Vt < 0 ).

* Likewise, we find that we typically get current to flow


through this channel by making the voltage vDS negative.
If we make the voltage vDS sufficiently negative, the ptype induced channel will pinch off.
* Note that when vDS is negative, the drain current will
flow from the PMOS source, to the PMOS drain (i.e.,
exactly opposite that of the NMOS device with a
positive vDS).
Jim Stiles

The Univ. of Kansas

Dept. of EECS

10/10/2005

PMOS and CMOS

3/3

* Thus, for a PMOS device, we define current flowing


from source to drain as positive current((i.e., exactly
opposite that of the NMOS device).
pinch-off point

Saturation
Region

iD

Triode
Region

vDS

The PMOS iD vs. vDS Curve

Jim Stiles

The Univ. of Kansas

Dept. of EECS

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