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L-18 Photolithography

This document discusses the process of photolithography which is used to create integrated circuits and other microelectronic components. It goes through each step of the photolithography process including preparing the substrate, applying photoresist, soft baking, mask alignment and exposure, developing, and hard baking. It also discusses the different types of photoresist and exposure methods used.

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Ashutosh Baghel
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99 views14 pages

L-18 Photolithography

This document discusses the process of photolithography which is used to create integrated circuits and other microelectronic components. It goes through each step of the photolithography process including preparing the substrate, applying photoresist, soft baking, mask alignment and exposure, developing, and hard baking. It also discusses the different types of photoresist and exposure methods used.

Uploaded by

Ashutosh Baghel
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPSX, PDF, TXT or read online on Scribd
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Photolithography

Outline

Motivation History

Photolithography Preparation and Priming Spin-Coating Photoresists Soft-baking Mask Alignment and Exposure Developing Hard-baking

Methods and Theories


References

Motivation

Creation of integrated circuits, which are a major component in computer technology An extension of photolithography processes are used to create standard semiconductor chips Play a key role in the production of technically demanding components of advanced microsensors

One such company is MEMS Microelectromechanical systems

Used to make adhesives in electronics

History

Historically, lithography is a type of printing technology that is based on the chemical repellence of oil and water. Photo-litho-graphy: latin: light-stone-writing In 1826, Joseph Nicephore Niepce, in Chalon, France, takes the first photograph using bitumen of Judea on a pewter plate, developed using oil of lavender and mineral spirits In 1935 Louis Minsk of Eastman Kodak developed the first negative photoresist In 1940 Otto Suess developed the first positive photoresist. In 1954, Louis Plambeck, Jr., of Du Pont, develops the Dycryl polymeric letterpress plate

Photolithography

In photolithography, the pattern is created photographically on a substrate (silicon wafer)


Photolithography is a binary pattern transfer: there is no gray-scale, color, nor depth to the image This pattern can be used as a resist to substrate etchant, or a mold, and other forms of design processes

The steps involved are wafer cleaning, photoresist application, soft baking, mask alignment, and exposure and development

Preparation and Priming

Prepare the substrate (silicon wafer):

Wash with appropriate solvent to remove any dirt and other impurities Acetone, MeOH, TCE Dry in Oven at 150C for 10 min. Place on hotplate and cover with petri dish, let temp. stabilize at 115C. Chemical that coats the substrate and allows for better adhesion of the resist

Deposit Primer (optional)

Spin-Coating the Resist

Spin-coat the photoresist onto the surface of the wafer


RPM: 1000-7000 Time: ~30 sec Produces a thin uniform layer of photoresist on the wafer surface.

Use red/amber safe light at this stage

Photoresist

Photoresist is an organic polymer which changes its chemical structure when exposed to ultraviolet light. It contains a light-sensitive substance whose properties allow image transfer onto a printed circuit board. There are two types of photoresist: positive and negative

Two Types of Photoresist


Positive Photoresist

Negative Photoresist

Exposure to UV light makes it more soluble in the developer


Exposed resist is washed away by developer so that the unexposed substrate remains

Exposure to UV light causes the resist to polymerize, and thus be more difficult to dissolve

Developer removes the unexposed resist


This is like a photographic negative of the pattern

Results in an exact copy of the original design

Soft-Baking

Put on hotplate, or in oven

Temperature: 65C-115C, Time: 1-5 min

Removes volatile solvents from the coating Makes photoresist imageable Hardens to amorphous solid Be careful not to overbake and destroy the sensitizer

Mask Alignment and Exposure

Photomask is a square glass plate with a patterned emulsion of metal film on one side After alignment, the photoresist is exposed to UV light Three primary exposure methods: contact, proximity, and projection

Exposure Methods

Photoresist Developer

Highly pure buffered alkaline solution


Removes proper layer of photoresist upon contact or immersion Degree of exposure affects the resolution curves of the resist

Hard Baking

Final step in the photolithographic process

Not always necessary; depends on the resist

Hardens the photoresist Improves adhesion of the photoresist to the wafer surface

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