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Electronic Devices Model Question Papers

This document is a model exam for an Electronics Devices course covering topics including: - Drift current and its expression - Diode current calculations using saturation current - Cut-off and linear regions of a transistor - Relationship between emitter, collector, and beta currents in a BJT - Comparison of BJTs and JFETs - Channel length modulation in MOSFETs - Dark current and peak inverse voltage - Factors determining stability of voltage regulators - Types of GaAs devices The exam consists of 20 multiple choice and numerical problems worth a total of 100 marks.

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2K views2 pages

Electronic Devices Model Question Papers

This document is a model exam for an Electronics Devices course covering topics including: - Drift current and its expression - Diode current calculations using saturation current - Cut-off and linear regions of a transistor - Relationship between emitter, collector, and beta currents in a BJT - Comparison of BJTs and JFETs - Channel length modulation in MOSFETs - Dark current and peak inverse voltage - Factors determining stability of voltage regulators - Types of GaAs devices The exam consists of 20 multiple choice and numerical problems worth a total of 100 marks.

Uploaded by

k_kunaraj
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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LOYOLA ICAM

COLLEGE OF ENGINEERING AND TECHNOLOGY (LICET)


Loyola College Campus, Nungambakkam , Chennai 34
Branch: ECE Date: 28-04-2014
Semester: II Time: 8.00 - 11.00 a.m (3 Hrs)
MODEL EXAM
ELECTRONIC DEVICES (EC6201)

PART-A Answer all the Questions ( 6x2=12)
1. What is drift current? write the expression for drift current density.
2. The reverse saturation current of a silicon PN junction diode is 10A.Calculate the
diode current for the forward-bias voltage of 0.6V at 25C.
3. What is cut-off and linear region in a transistor ?
4. A transistor has =100. If the collector current is 40 mA, fin the value of emitter
current.
5. Compare BJT and JFET.
6. What is channel length modulation in MOSFET?
7. What is Dark current?
8. What is Peak Inverse Voltage (PIV).
9. What are the factors which determine the stability of a voltage regulator?
10. List out the types of GaAs Devices.


PART-B Answer all the Questions (5x16=80)

11. (i) Calculate the dynamic forward and reverse resistance of a PN junction diode when
the applied voltage is 0.25V at T=300K and I
0
=2A. (6)
(ii) Derive an expression for the capacitance in a reverse biased PN-Junction. (10)
OR
12. With a neat sketch derive the PN diode current equation from the quantitative theory
of diode currents. (16)



13. Explain the operation of a transistor in CE configuration. Discuss the input and output
characteristics along with the required transistor parameters. (16)
OR
14. (i) Draw the h-parameter model of a CE transistor and discuss the parameters. (8)
(ii) Compare the typical characteristics of CE, CB and CC configuration. (8)

15. Explain the construction and operation of an N-Channel JFET with neat sketch. prove
that =r
d
x g
m
. (16)
OR
16. Discuss the small signal equivalent circuits of JFET and MOSFET. (16)

17. (i) Explain the working of the Zener diode as a voltage regulator. (10)
(ii) A 24V, 600mW Zener diode is used for providing a 24V stabilized supply to a
variable load. If the input voltage is 32V, calculate the value of series resistance
required and the diode current when the load is 1.2K. (6)
OR
18. Explain the construction and operation of MESFET. Compare MOSFET and
MESFET. (16)

19. (i) With a neat sketch explain the operation of UJT. (10)
(ii) A full wave rectifier employs 2 SCRs and 2 diodes in bridge configuration to
rectify 230V, 50 Hz AC and give an output of 150V to a load of 10. Find the
firing angle, the time during which the SCR remains OFF & the load current. (6)
OR
20. Discuss the construction and operation of DIAC and TRIAC. (16)

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