Transistors

1
Publication date: February 2004 SJC00001CED
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
Features
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
5.90.2
0.70.1
4.90.2
8
.
6

0
.
2
0
.
7
+
0
.
3

0
.
2
1
3
.
5

0
.
5
2.540.15
(
3
.
2
)
(1.27) (1.27)
0.45
+0.2
0.1
0.45
+0.2
0.1
1 3 2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
85 to 170 120 to 240 170 to 340
Parameter Symbol Rating Unit
Collector-base voltage
2SA0683 V
CBO
30 V
(Emitter open)
2SA0684 60
Collector-emitter voltage
2SA0683 V
CEO
25 V
(Base open)
2SA0684 50
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
1 A
Peak collector current I
CP
1.5 A
Collector power dissipation P
C
1 W
Junction temperature T
j
150 C
Storage temperature T
stg
55 to +150 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
2SA0683 V
CBO
I
C
= 10 A, I
E
= 0 30 V
(Emitter open)
2SA0684 60
Collector-emitter voltage
2SA0683 V
CEO
I
C
= 2 mA, I
B
= 0 25 V
(Base open)
2SA0684 50
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 A, I
C
= 0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 A
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= 10 V, I
C
= 500 mA 85 340
h
FE2
V
CE
= 5 V, I
C
= 1 A 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.2 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA 0.85 1.20 V
Transition frequency f
T
V
CB
= 10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
2SA0683, 2SA0684
2
SJC00001CED
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0 160 40 120 80
0
1.2
1.0
0.8
0.6
0.4
0.2
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
C


(
W
)
Ambient temperature T
a
(C)
0 10 8 2 6 4
0
1.5
1.25
1.0
0.75
0.50
0.25
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
T
a
= 25C
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)
Collector-emitter voltage V
CE
(V)
0 12 10 8 2 6 4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
= 10 V
T
a
= 25C
Base current I
B
(mA)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
m
A
)
0.01 0.1 1 10
0.01
0.1
1
10
100
T
a
= 75C
25C
25C
I
C
/ I
B
= 10
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
C
E
(
s
a
t
)


(
V
)
Collector current I
C
(A)
0.01 0.1 1 10
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 25C
25C
75C
B
a
s
e
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
B
E
(
s
a
t
)


(
V
)
Collector current I
C
(A)
0.01 0.1 1 10
0
600
500
400
300
200
100
V
CE
= 10 V
T
a
= 75C
25C
25C
F
o
r
w
a
r
d

c
u
r
r
e
n
t

t
r
a
n
s
f
e
r

r
a
t
i
o


h
F
E
Collector current I
C
(A)
1 10 100
0
200
160
120
80
40
V
CB
= 10 V
T
a
= 25C
T
r
a
n
s
i
t
i
o
n

f
r
e
q
u
e
n
c
y


f
T


(
M
H
z
)
Emitter current I
E
(mA)
1 10 100
0
50
40
30
20
10
I
E
= 0
f = 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
C
o
l
l
e
c
t
o
r

o
u
t
p
u
t

c
a
p
a
c
i
t
a
n
c
e


(
C
o
m
m
o
n

b
a
s
e
,

i
n
p
u
t

o
p
e
n

c
i
r
c
u
i
t
e
d
)


C
o
b


(
p
F
)
0.1 1 10 100
0
120
100
80
60
40
20
I
C
= 10 mA
T
a
= 25C
2SA0684
2SA0683
Base-emitter resistance R
BE
(k)
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

v
o
l
t
a
g
e


(
R
e
s
i
s
t
o
r

b
e
t
w
e
e
n

B

a
n
d

E
)


V
C
E
R


(
V
)
2SA0683, 2SA0684
3
SJC00001CED
I
CEO
T
a
Safe operation area
0 160 40 120 80
1
10
10
2
10
3
10
4
V
CE
= 10 V
Ambient temperature T
a
(C)
I
C
E
O


(
T
a
)
I
C
E
O


(
T
a

=

2
5

C
)
0.1 1 10 100
10
3
10
2
10
1
1
10
Single pulse
T
a
= 25C
t = 10 ms
2
S
A
0
6
8
4
2
S
A
0
6
8
3
t = 1 s
I
CP
I
C
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)
Collector-emitter voltage V
CE
(V)
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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2003 SEP