Transistors

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2SC1383, 2SC1384
Silicon NPN epitaxial planar type
Unit: mm
5.9±0.2 4.9±0.2
For low-frequency power amplification and driver amplification
Complementary to 2SA0683, 2SA0684

8.6±0.2
■ Features
0.7±0.1

0.7+0.3
–0.2
• Low collector-emitter saturation voltage VCE(sat)
• Complementary pair with 2SA0683, 2SA0684

13.5±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage 2SC1383 VCBO 30 V 0.45+0.2 0.45+0.2
–0.1
–0.1

(Emitter open) 2SC1384 60 (1.27) (1.27)

1: Emitter
Collector-emitter voltage 2SC1383 VCEO 25 V 2: Collector

(3.2)
1 2 3
(Base open) 3: Base
2SC1384 50
2.54±0.15 EIAJ: SC-51
Emitter-base voltage (Collector open) VEBO 5 V TO-92L-A1 Package
Collector current IC 1 A
Peak collector current ICP 1.5 A
Collector power dissipation PC 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SC1383 VCBO IC = 10 µA, IE = 0 30 V
(Emitter open) 2SC1384 60
Collector-emitter voltage 2SC1383 VCEO IC = 2 mA, IB = 0 25 V
(Base open) 2SC1384 50
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA
Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 500 mA 85 340 
hFE2 VCE = 5 V, IC = 1 A 50 
Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V
Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V
Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340

Publication date: March 2003 SJC00104CED 1

 2SC1383, 2SC1384
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PC  Ta IC  VCE IC  I B
1.2 1.50 1.2
Ta = 25°C VCE = 10 V
Ta = 25°C
Collector power dissipation PC (W)

1.0 1.25 1.0

IB = 10 mA
9 mA

Collector current IC (A)

Collector current IC (A)

8 mA
0.8 1.00 0.8
7 mA
6 mA
0.6 0.75 5 mA 0.6
4 mA

0.4 0.50 3 mA 0.4

2 mA
0.2 0.25 0.2
1 mA

0 0 0
0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10 12
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

VCE(sat)  IC VBE(sat)  IC hFE  IC

10 100 600
IC / IB = 10 IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = 10 V
Base-emitter saturation voltage VBE(sat) (V)

500

Forward current transfer ratio hFE

1 10
Ta = 75°C
400
25°C
25°C
Ta = −25°C
−25°C
0.1 1 300
75°C
Ta = 75°C
200
25°C
0.01 0.1
−25°C
100

0.001 0.01 0
0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

fT  I E Cob  VCB VCER  RBE

200 V = 10 V 50 120
CB
IE = 0 IC = 10 mA
Ta = 25°C
f = 1 MHz Ta = 25°C
(V)
Collector output capacitance C (pF)

Ta = 25°C 100
Transition frequency fT (MHz)

160
(Resistor between B and E) VCER

40
ob

80
(Common base circuited)

120 30
Collector-emitter voltage

60
2SC1384
80 20
40

2SC1383
40 10
20

0 0 0
−1 −10 −100 1 10 100 0.1 1 10 100
Emitter current IE (mA) Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ)

2 SJC00104CED
www.DataSheet4U.com 2SC1383, 2SC1384

ICEO  Ta Safe operation area

104 10
VCE = 10 V Single pulse
Ta = 25°C

ICP
103 1

Collector current IC (A)

IC t = 10 ms
ICEO (Ta = 25°C)

t=1s
ICEO (Ta)

102 0.1

2SC1383
2SC1384
10 0.01

1 0.001
0 40 80 120 160 0.1 1 10 100
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJC00104CED 3
www.DataSheet4U.com

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2002 JUL