1. A conducting line is a 2.

8 mm long and 1x4 m rectangular

cross section, I= 5 mA. V= 100mv, n=500 cm2/v.s. Find
electron concentration.
2. A piece of silicon doped with arsenic (ND=1017 cm-3) is 100m
long, 1m width, 10m thick. Calculate the resistance of this
sample when contacted one each end.
3. . Find the resistivity of intrinsic Ge and Si at 300K.
4. Calculate the resistivity of silicon doped with a donor
density ND=2x1015cm-3. What is the material type? Classify
the sample as an insulator, semiconductor or conductor.
5. A piece of silicon has a resistivity which is specified by the
manufacturer to be between 2 and 5 .cm. Assuming that
the mobility of electron is 1400 cm2/v.s and that of holes is
450 cm2/v.s, what is the minimum possible carrier density
and what is the corresponding carrier type? Repeat for the
maximum possible carrier density.
6. Calculate the electron and hole density in germanium,
silicon if the Fermi energy is 0.3 eV above the intrinsic
energy level. Repeat if the Fermi energy is 0.3 eV below the
conduction band edge. Assume that T=300K.
7. For a particular SC sample the probability of finding electron
in states at an energy KT above the bottom of the
conduction band is e-11 at room temperature, determine
the location of the Fermi level with respect to EC in the
given material.

8. Electrons and holes are moving in a uniform, one

dimensional electric field E=300 V/cm. The electron and
hole mobilities are 710 and 260 cm2/v.s, respectively. What
are the electron and hole velocities? If n=1017 cm-3 and
p=103 cm-3, what are the hole current densities?
9. The hole density in an n-type silicon wafer (ND=1017 cm-3)
decreases linearly from1014 cm-3 to 1013 cm-3 between
x=0 and x=1m. calculate the hole diffusion current density
where p=317 cm2/v.s.
10. A semiconductor under equilibrium conditions is
characterized by the energy band of the figure shown. Given
Eg= 1.12 eV, ni = 1010 cm-3and KT= 0.026 eV.
a. Determine n and p at x= L/2.
b. Determine n at x=L/4
11. The electron concentration in a region of silicon is shown
in the figure. If the electron mobility is 350 cm2/v.s and the
width WB=1m, determine the electron diffusion current
density at room temperature.
n(x)
1018

WB

12. Suppose the hole concentration in silicon sample is

described by
( )

) holes/cm3, x 0

In which the holes diffusion length,

. If
, find the holes diffusion current density as a function
of distance (x). What is the diffusion current at x=0 if the crosssectional area is
.

13. ---

14. A semiconductor material has electron and hole motilities

n and p, respectively. When the conductivity is considered
as a function of the electron concentration " no" :
(i) Derive an expression for the electron carrier density, no,
at which the conductivity of the sample to be minimum
(min), and then calculate its value at room temperature.
(ii) Show that the minimum value of its conductivity, min,
can be written as:

Where i is the intrinsic conductivity.

15. Starting with the space charge density in the PN junction.

Derive an expression for the built-in electric field

16. ---

17. --18. For an abrupt silicon PN junction consists of a P-type

region containing 2x1016 cm-3 acceptors and an N-type
region containing 5 1016 cm-3 donors. Calculate:
(i) The built-in potential.
(ii) The total width of the depletion region if the applied
voltage (V) equals 0, and 2.0 V.
(iii) The maximum electric field in the depletion region at 0,
and 2.0 V.
(iv) The total junction capacitance at zero bias if diode area
equals 10-4 cm2.
19. A Silicon PN junction, shown in Fig.1, is manufactured
from p-type material has NA = 1017 cm-3 , n = 0.01 sec , and
the n-type material has ND = 1016 cm-3, P = 0.1 sec and its
area (A) = 10-4 cm2. When a forward voltage (VA) is applied
across the junction, it is found that the access minority carriers
are mathematically given by:

(i) Calculate the total current flowing through the junction.

(ii) Calculate the value of the applied voltage (VA).
(iii) Calculate the total saturation current.

20. An abrupt Silicon PN junction, the P-type region has

cm-3 and the n-type region has
cm-3 and
cm-3.
i. Calculate the thermal equilibrium density of electrons
and holes in the P-type and n-type regions.
ii. Calculate the built-in potential of the PN junction.
21. An abrupt Silicon PN junction, the P-type region has
cm-3 and the n-type region has
cm-3
i. Calculate the built-in potential of the PN junction.
ii. Calculate the total depletion region width if the
applied voltage equal 0, 0.5 and -0.25. Comment on
the results.
iii. Calculate the maximum electric field in the depletion
region if the applied voltage equal 0, 0.5 and -0.25.
22. ---

23. An abrupt Silicon PN junction, the P-type region has

cm-3 and the n-type region has
cm-3. If the applied voltage VA = 0.6 v. Assuming along
p-type region and that n-type region is much smaller than
the diffusion length,
. Calculate the total current
flowing through the junction. Use
= 1000 cm2/V-s
and
= 300 cm2/V-s. The minority carrier lifetime is 10 ms
and the diode area is 100 mm by 100 mm.

24. A Silicon PN junction, shown in Fig.1, is manufactured

from p-type material has NA = 1017 cm-3 , n = 0.01 sec , and
the n-type material has ND = 1016 cm-3, P = 0.1 sec and its
area (A) = 10-4 cm2.
i. Calculate the leakage current due to holes.
ii. Calculate the leakage current due to electrons.
iii. Calculate the total current flowing through the junction at
VA=0.6 V.
iv. Calculate the minority carrier concentrations at the edges
of the depletion region at VA=0.6 V.
v. Calculate the minority carrier concentrations at 1.0 m
into the bulk regions of the P and N materials at VA=0.6 V.
vi. Sketch the excess minority carrier concentrations
distribution throughout the bulk regions of the P and N
materials at VA=0.6 V.
25. For a p+n junction diode with p = 0.1s and ID = 1.0 mA
(VA = 0.5 built-in potential) at room temperature, the zero bias
junction capacitance is 0.5 pF, and the diode bulk resistance is
30 , calculate all components of the small signal model.