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Problem Set 2

The document is a problem set for an Electronic Material and Devices course, focusing on the motion and recombination of electrons and holes in silicon and other semiconductors. It includes various problems related to calculating resistivity, conductivity, impurity concentrations, electric current density, and recombination rates under different conditions. The problems require knowledge of semiconductor physics, including concepts of doping, mobility, and temperature effects.

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3 views2 pages

Problem Set 2

The document is a problem set for an Electronic Material and Devices course, focusing on the motion and recombination of electrons and holes in silicon and other semiconductors. It includes various problems related to calculating resistivity, conductivity, impurity concentrations, electric current density, and recombination rates under different conditions. The problems require knowledge of semiconductor physics, including concepts of doping, mobility, and temperature effects.

Uploaded by

serajaldinkhaled
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Electronic Material and Devices EC310- Spring 2025

Problem Set 2: Motion and Recombination of Electrons and Holes

1. The concentration of donor impurity atoms in silicon is 𝑁𝑑 = 1015 𝑐𝑚−3 . Assume an


𝑐𝑚2 𝑐𝑚2
electron mobility of 𝜇𝑛 = 1300 𝑉. 𝑠 and a hole mobility of 𝜇𝑝 = 450 𝑉. 𝑠 (a) Calculate

the resistivity of the material. (b) What is the conductivity of the material?
2. A p-type silicon material is to have a conductivity of 𝜎 = 1.8 (Ω. 𝑐𝑚)−1 . If the mobility
𝑐𝑚2 𝑐𝑚2
values are 𝜇𝑛 = 1250 𝑉. and 𝜇𝑝 = 380 𝑉. , what must be the acceptor impurity
𝑠 𝑠

concentration in the material?


3. A silicon sample is 2.5 cm long and has a cross-sectional area of 0.1 cm2. The silicon is
n type with a donor impurity concentration of 𝑁𝑑 = 2 × 1015 𝑐𝑚−3 . The resistance of
the sample is measured and found to be 70 Ω. What is the electron mobility?
4. A silicon crystal having a cross-sectional area of 0.001 cm2 and a length of 10−3 𝑐𝑚 is
connected at its ends to a 10-V battery. At 𝑇 = 300 𝐾, we want a current of 100 mA in
the silicon. Calculate (a) the required resistance R, (b) the required conductivity, (c) the
density of donor atoms to be added to achieve this conductivity, and (d) the
concentration of acceptor atoms to be added to form a compensated p-type material with
the conductivity given from part (b) if the initial concentration of donor atoms is 𝑁𝑑 =
1015 𝑐𝑚−3
5. A perfectly compensated semiconductor is one in which the donor and acceptor
impurity concentrations are exactly equal. Assuming complete ionization, determine the
resistivity of silicon at 𝑇 = 300 𝐾 in which the impurity concentrations are (a) 𝑁𝑑 =
𝑁𝑎 = 1014 𝑐𝑚−3 . (b) 𝑁𝑑 = 𝑁𝑎 = 1016 𝑐𝑚−3., and (c) 𝑁𝑑 = 𝑁𝑎 = 1018 𝑐𝑚−3.
6. Consider a semiconductor that is uniformly doped with 𝑁𝑑 = 1014 𝑐𝑚−3 and 𝑁𝑎 = 0,
𝑐𝑚2
with an applied electric field of 𝐸 = 100 𝑉/𝑐𝑚. Assume that 𝜇𝑛 = 1000 and 𝜇𝑝 =
𝑉. 𝑠

0. Also assume the following parameters:


𝑁𝑐 = 2 × 1019 (𝑇/300)3/2 𝑐𝑚−3
𝑁𝑣 = 1 × 1019 (𝑇/300)3/2 𝑐𝑚−3
𝐸𝑔 = 1.1 𝑒𝑉
(a) Calculate the electric-current density at 𝑇 = 300 𝐾.
(b) At what temperature will this current increase by 5 percent? (Assume the mobilities are
independent of temperature.)
1
7. The steady-state electron distribution in silicon can be approximated by a linear function
of 𝑥. The maximum electron concentration occurs at 𝑥 = 0 and is 𝑛(0) = 2 ×
1016 𝑐𝑚−3. At 𝑥 = 0.012 𝑐𝑚, the electron concentration is 5 × 1015 𝑐𝑚−3. If the
electron diffusion coefficient is 𝐷𝑛 = 27 𝑐𝑚2 /𝑠, determine the electron diffusion
current density.
8. The electron concentration in silicon at 𝑇 = 300 𝐾 is given by
−𝑥
𝑛(𝑥) = 1016 exp( )𝑐𝑚−3
18
where 𝑥 is measured in 𝜇𝑚 and is limited to 0 ≤ 𝑥 ≤ 25 𝜇𝑚. The electron diffusion
𝑐𝑚2
coefficient is 𝐷𝑛 = 25 𝑐𝑚2 /𝑠 and the electron mobility is 𝜇𝑛 = 960 𝑉. 𝑠 . The total

electron current density through the semiconductor is constant and equal to 𝐽𝑛 =


−40 𝐴/𝑐𝑚2. The electron current has both diffusion and drift current components.
Determine the electric field as a function of 𝑥 which must exist in the semiconductor.
9. Consider silicon at 𝑇 = 300 K that is doped with donor impurity atoms to a
concentration of 𝑁𝑑 = 5 × 1015 𝑐𝑚−3. The excess carrier lifetime is 2 × 10−7 𝑠. (a)
Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are
generated such that 𝑛′ = 𝑝′ = 1014 𝑐𝑚−3. What is the recombination rate of holes for
this condition?
10. Consider a silicon sample at 𝑇 = 300 𝐾 that is uniformly doped with acceptor impurity
atoms at a concentration of 𝑁𝑎 = 1016 𝑐𝑚−3. At 𝑡 = 0, a light source is turned on
generating excess carriers uniformly throughout the sample at a rate of 8 ×
1020 𝑐𝑚−3 𝑠 −1. Assume the minority carrier lifetime is 𝜏𝑛 = 5 × 10−7 𝑠, and assume
𝑐𝑚2 𝑐𝑚2
mobility values of 𝜇𝑛 = 900 𝑉. and 𝜇𝑝 = 380 𝑉. 𝑠 . (a) Determine the conductivity of
𝑠

the silicon as a function of time for 𝑡 ≥ 0. (b) What is the value of conductivity at (i)
𝑡 = 0 and (ii) t= ∞ ?
11. An n-type GaAs semiconductor at 𝑇 = 300 𝐾 is uniformly doped at 𝑁𝑑 = 5 ×
1015 𝑐𝑚−3. The minority carrier lifetime is 𝜏𝑝 = 5 × 10−8 𝑠. Assume mobility values of
𝑐𝑚2 𝑐𝑚2
𝜇𝑛 = 7500 𝑉. and 𝜇𝑝 = 310 𝑉. 𝑠 . A light source is turned on at 𝑡 = 0 generating
𝑠

excess carriers uniformly at a rate of 4 × 1021 𝑐𝑚−3 𝑠 −1 and turns off at 𝑡 = 10−6 𝑠.
(a) Determine the excess carrier concentrations versus time over the range 0 ≤ 𝑡 ≤ ∞.
(b) Calculate the conductivity of the semiconductor versus time over the same time
period as part (a).

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