Scribd
Upload
57 views14 pages

Concordia University Department of Electrical and Computer Engineering

This document provides an overview of static power switches discussed in Chapter 2. It summarizes key concepts such as: 1) The classification of switches as either uncontrolled (diodes), semi-controlled (thyristors), or controllable. Controllable switches like MOSFETs, IGBTs, and GTOs can be turned on and off by control signals. 2) The operating characteristics of common power switches including diodes, thyristors, BJTs, MOSFETs, IGBTs, and GTOs. Thyristors latch on but require low gate drives while MOSFETs are fast but limited to low voltages. 3) Practical switching characteristics that

Uploaded by

Raja Huzaifa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
57 views14 pages

Concordia University Department of Electrical and Computer Engineering

This document provides an overview of static power switches discussed in Chapter 2. It summarizes key concepts such as: 1) The classification of switches as either uncontrolled (diodes), semi-controlled (thyristors), or controllable. Controllable switches like MOSFETs, IGBTs, and GTOs can be turned on and off by control signals. 2) The operating characteristics of common power switches including diodes, thyristors, BJTs, MOSFETs, IGBTs, and GTOs. Thyristors latch on but require low gate drives while MOSFETs are fast but limited to low voltages. 3) Practical switching characteristics that

Uploaded by

Raja Huzaifa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 14

Concordia University

Department of Electrical and Computer


Engineering
Power Electronics (I) ELEC-433/6411
Week 2
Overview of static power switches
(Chapter 2)

Line current distortion


Input current of a 1 diode bridge rectifier

is (t ) = is1 (t ) + ish (t )

Fourier representation:
RMS value:

12

1 2

Is =
is (t ) dt

12

2
= I sh

h =1

h 1

I dis
THD: THD(%) = 100 , where I dis = I s2 I s21 =
I s1
I s ,peak
Crest factor =
Crest factor:
Is

2
I
sh
h 1

Classification of switches
According to the degree of controllability:
Diodes: On and Off states controlled by the power
circuit (uncontrolled).
SCR thyristors: Turned On by a control signal but
turned off by the power circuit (semi-controlled).
Controllable switches: Can be turned On and Off
by a control signal.
For analysis purposes power switches are usually conside
red ideal: Instantaneous, lossless, and infinite current and
voltage handling capability.
3

Diodes

2 terminals device.
An ideal diode turns On when forward biased and
Off when its forward current goes to zero.
4

Thyristor (Silicon Controlled Rectifier - SCR)


3 terminals
device.

3 main operating
regions.

Latches On by a gate current pulse when forward biased


and turns Off as a diode.
Requires low power gate drives and is very rugged.
5

Diodes x thyristors
Main advantage of a thyristor over a diode is the
capability of power flow control.
By varying the turn-on (delay) time, the power
supplied to the load (resistor) can be controlled.

Controllable switches

Used in forced-commutated converters (fsw > 60 Hz )


Different types: BJT, MOSFET, IGBT and GTO.
Gate requirements and performance are quite different.
Generic switch: Current flows in the direction of the
arrow when the device in On.

Practical switching characteristics


Switching losses become important for high frequency operation.

Bipolar Junction Transistor (BJT)

IB >

IC
h fe

Current controlled or low input (base) impedance device.


Base control circuit requires significant power.
For operation as a switch, the device requires a large IB
in the On state (saturation) and IB = 0A in the OFF state.
Replaced by MOSFETs and IGBTs.
9

MOSFET

High input impedance (voltage controlled) device.


Fast commutation times (tens to hundreds of ns).
Low On state resistance (RDS_On).
Easy paralleling
Great for low voltage applications (< 200 V).
10

Insulated Gate Bipolar Transistor (IGBT)


Hybrid device
High input impedance
as a MOSFET.
High voltage devices
have low on state
voltage drops as a BJT
Can be designed to
block negative voltages

11

Gate-Turn-Off (GTO) thyristor

Turns On and latches as an SCR but requires a large (IAK/3)


negative gate current to turn-off (elaborate gate control
circuit).
Blocks negative voltages but has low switching speeds
Used in high power applications
12

Comparison of controllable switches

13

Power semiconductor switches capabilities

14

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy