STM32L151xD STM32L152xD

Ultra-low-power 32-bit MCU ARM Cortex-M3, 384KB Flash,

48KB SRAM, 12KB EEPROM, LCD, USB, ADC, DAC, memory I/F
Datasheet - production data

Features
Ultra-low-power platform
1.65 V to 3.6 V power supply LQFP144 (20 20 mm) UFBGA132 WLCSP64
LQFP100 (14 14 mm) (7 7 mm)
-40C to 105C temperature range LQFP64 (10 10 mm) (0.4 mm pitch)

305 nA Standby mode (3 wakeup pins)

Up to 116 fast I/Os (102 I/Os 5V tolerant), all
1.15 A Standby mode + RTC mappable on 16 external interrupt vectors
0.475 A Stop mode (16 wakeup lines) Memories
1.35 A Stop mode + RTC 384 KB Flash with ECC (with 2 banks of
11 A Low-power run mode 192 KB enabling Rww capability)
230 A/MHz Run mode 48 KB RAM
10 nA ultra-low I/O leakage 12 KB of true EEPROM with ECC
128 byte backup register
8 s wakeup time
Memory interface controller supporting
Core: ARM Cortex-M3 32-bit CPU SRAM, PSRAM and NOR Flash
From 32 kHz up to 32 MHz max LCD driver (except STM32L151xD devices) up
33.3 DMIPS peak (Dhrystone 2.1) to 8x40 segments, contrast adjustment,
blinking mode, step-up converter
Memory protection unit
Rich analog peripherals (down to 1.8V)
Up to 34 capacitive sensing channels 3x operational amplifiers
CRC calculation unit, 96-bit unique ID 12-bit ADC 1 Msps up to 40 channels
12-bit DAC 2 ch with output buffers
Reset and supply management
2x ultra-low-power-comparators
Low-power, ultrasafe BOR (brownout reset) (window mode and wakeup capability)
with 5 selectable thresholds DMA controller 12x channels
Ultra-low-power POR/PDR 12x peripheral communication interfaces
Programmable voltage detector (PVD) 1x USB 2.0 (internal 48 MHz PLL)
Clock sources 5x USARTs
1 to 24 MHz crystal oscillator Up to 8x SPIs (2x I2S, 3x 16 Mbit/s)
32 kHz oscillator for RTC with calibration 2x I2Cs (SMBus/PMBus)
1x SDIO interface
High Speed Internal 16 MHz factory-
trimmed RC (+/- 1%) 11x timers: 1x 32-bit, 6x 16-bit with up to 4
IC/OC/PWM channels, 2x 16-bit basic timers,
Internal low-power 37 kHz RC 2x watchdog timers (independent and window)
Internal multispeed low-power 65 kHz to
4.2 MHz Table 1. Device summary
PLL for CPU clock and USB (48 MHz) Reference Part number
Pre-programmed bootloader STM32L151QD, STM32L151RD,
STM32L151xD
USB and USART supported STM32L151VD, STM32L151ZD
Serial wire debug, JTAG and trace STM32L152QD, STM32L152RD,
STM32L152xD
STM32L152VD, STM32L152ZD

February 2016 DocID022027 Rev 11 1/154

This is information on a product in full production. www.st.com
Contents STM32L151xD STM32L152xD

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2.1 Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.2 Ultra-low-power device continuum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2.1 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2.2 Shared peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2.3 Common system strategy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.2.4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2 ARM Cortex-M3 core with MPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.3 Reset and supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.3.4 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.4 Clock management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.5 Low-power real-time clock and backup registers . . . . . . . . . . . . . . . . . . . 25
3.6 GPIOs (general-purpose inputs/outputs) . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.7 Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.8 FSMC (flexible static memory controller) . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.9 DMA (direct memory access) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.10 LCD (liquid crystal display) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.11 ADC (analog-to-digital converter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.11.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.11.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.12 DAC (digital-to-analog converter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.13 Operational amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.14 Ultra-low-power comparators and reference voltage . . . . . . . . . . . . . . . . 29
3.15 System configuration controller and routing interface . . . . . . . . . . . . . . . 29

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3.16 Touch sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

3.17 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.17.1 General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM9, TIM10 and
TIM11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.17.2 Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.17.3 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.17.4 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.17.5 Window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.18 Communication interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.18.1 IC bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.18.2 Universal synchronous/asynchronous receiver transmitter (USART) . . 32
3.18.3 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.18.4 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.18.5 SDIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.18.6 Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.19 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 33
3.20 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.20.1 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.20.2 Embedded Trace Macrocell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

4 Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
6.1.7 Optional LCD power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6.1.8 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

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6.3.2 Embedded reset and power control block characteristics . . . . . . . . . . . 63

6.3.3 Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 65
6.3.4 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
6.3.5 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
6.3.6 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.3.7 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
6.3.8 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.9 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.10 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
6.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
6.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
6.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
6.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
6.3.15 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
6.3.16 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
6.3.17 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
6.3.18 SDIO characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
6.3.19 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
6.3.20 DAC electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
6.3.21 Operational amplifier characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 125
6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.23 Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.24 LCD controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130

7.1 LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package
information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
7.2 LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package
information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
7.3 LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package
information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
7.4 UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid
array package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
7.5 WLCSP64, 0.4 mm pitch wafer level chip scale package information . . 142
7.6 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
7.6.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146

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8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147

9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

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List of tables STM32L151xD STM32L152xD

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Ultra-low-power STM32L151xD and STM32L152xD device features
and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Functionalities depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . 17
Table 4. CPU frequency range depending on dynamic voltage scaling . . . . . . . . . . . . . . . . . . . . . . 18
Table 5. Functionalities depending on the working mode (from Run/active down to
standby) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 6. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 7. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 8. STM32L151xD and STM32L152xD pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 9. Alternate function input/output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 10. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 11. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 12. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 13. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 14. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 15. Embedded internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 16. Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Table 17. Current consumption in Run mode, code with data processing running from Flash. . . . . . 67
Table 18. Current consumption in Run mode, code with data processing running from RAM . . . . . . 68
Table 19. Current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 20. Current consumption in Low-power run mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 21. Current consumption in Low-power sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Table 22. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 23. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . . 74
Table 24. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 25. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 26. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 27. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 28. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 29. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 30. HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 31. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 32. MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 33. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 34. RAM and hardware registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 35. Flash memory and data EEPROM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 36. Flash memory and data EEPROM endurance and retention . . . . . . . . . . . . . . . . . . . . . . . 88
Table 37. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings . . . . . . . . . . . . . . . . . . 90
Table 38. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . 91
Table 39. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Table 40. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 41. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 42. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 43. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 44. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 45. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 46. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102

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Table 47. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102

Table 48. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 49. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 50. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 51. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 52. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 53. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 54. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 55. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 56. SCL frequency (fPCLK1= 32 MHz, VDD = VDD_I2C = 3.3 V). . . . . . . . . . . . . . . . . . . . . . . 110
Table 57. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 58. USB startup time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 59. USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 60. USB: full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 61. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 62. SDIO characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 63. ADC clock frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 64. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 65. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 66. Maximum source impedance RAIN max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 67. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 68. Operational amplifier characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 69. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 70. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 71. Comparator 1 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 72. Comparator 2 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 73. LCD controller characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 74. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical data . . . . . . . 131
Table 75. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical data . . . . . . . 133
Table 76. LQFP64, 10 x 10 mm 64-pin low-profile quad flat package mechanical data. . . . . . . . . . 136
Table 77. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 78. WLCSP64, 0.4 mm pitch wafer level chip scale package mechanical data . . . . . . . . . . . 142
Table 79. WLCSP64, 0.4 mm pitch package recommended PCB design rules . . . . . . . . . . . . . . . . 143
Table 80. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 81. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 82. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148

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7
List of figures STM32L151xD STM32L152xD

List of figures

Figure 1. Ultra-low-power STM32L151xD and STM32L152xD block diagram . . . . . . . . . . . . . . . . . 15

Figure 2. Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 3. STM32L15xZD LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 4. STM32L15xQD UFBGA132 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 5. STM32L15xVD LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 6. STM32L15xRD LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 7. STM32L15xRD WLCSP64 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 8. Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 9. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 10. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 11. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 12. Optional LCD power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 13. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 14. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Figure 15. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 16. HSE oscillator circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Figure 17. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Figure 18. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . . 89
Figure 19. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . . 90
Figure 20. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . . 91
Figure 21. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 22. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Figure 23. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Figure 24. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . 98
Figure 25. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 26. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Figure 27. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Figure 28. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 29. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Figure 30. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Figure 31. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Figure 32. USB timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Figure 33. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Figure 34. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Figure 35. SDIO timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Figure 36. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 37. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 38. Maximum dynamic current consumption on VREF+ supply pin during ADC
conversion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 39. 12-bit buffered /non-buffered DAC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Figure 40. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 130
Figure 41. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 42. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package top view example . . . . . . 132
Figure 43. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 133
Figure 44. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 45. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package top view example . . . . . . 135

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Figure 46. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . 136
Figure 47. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 48. LQFP64 10 x 10 mm, 64-pin low-profile quad flat package top view example . . . . . . . . . 138
Figure 49. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array package outline . . . . 139
Figure 50. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Figure 51. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array package
top view example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 52. WLCSP64, 0.4 mm pitch wafer level chip scale package outline . . . . . . . . . . . . . . . . . . . 142
Figure 53. WLCSP64, 0.4 mm pitch wafer level chip scale package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 54. WLCSP64, 0.4 mm pitch wafer level chip scale package top view example . . . . . . . . . . 144
Figure 55. Thermal resistance suffix 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Figure 56. Thermal resistance suffix 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146

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9
Introduction STM32L151xD STM32L152xD

1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of
the STM32L151xD and STM32L152xD ultra-low-power ARM Cortex-M3 based
microcontroller product line.
The STM32L151xD and STM32L152xD microcontrollers feature 384 Kbytes of Flash
memory.
The ultra-low-power STM32L151xD and STM32L152xD family includes devices in 5
different package types: from 64 pins to 144 pins. Depending on the device chosen,
different sets of peripherals are included, the description below gives an overview of the
complete range of peripherals proposed in this family.
These features make the ultra-low-power STM32L151xD and STM32L152xD
microcontroller family suitable for a wide range of applications:
Medical and handheld equipment
Application control and user interface
PC peripherals, gaming, GPS and sport equipment
Alarm systems, wired and wireless sensors, video intercom
Utility metering
This STM32L151xD and STM32L152xD datasheet should be read in conjunction with the
STM32L1xxxx reference manual (RM0038). The application note Getting started with
STM32L1xxxx hardware development (AN3216) gives a hardware implementation
overview. Both documents are available from the STMicroelectronics website www.st.com.
For information on the ARM Cortex-M3 core please refer to the ARM Cortex-M3
technical reference manual, available from the www.arm.com website. Figure 1 shows the
general block diagram of the device family.

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2 Description

The ultra-low-power STM32L151xD and STM32L152xD devices incorporate the

connectivity power of the universal serial bus (USB) with the high-performance ARM
Cortex-M3 32-bit RISC core operating at a frequency of 32 MHz (33.3 DMIPS), a memory
protection unit (MPU), high-speed embedded memories (Flash memory up to 384 Kbytes
and RAM up to 48 Kbytes), a flexible static memory controller (FSMC) interface (for devices
with packages of 100 pins and more) and an extensive range of enhanced I/Os and
peripherals connected to two APB buses.
The STM32L151xD and STM32L152xD devices offer three operational amplifiers, one 12-
bit ADC, two DACs, two ultra-low-power comparators, one general-purpose 32-bit timer, six
general-purpose 16-bit timers and two basic timers, which can be used as time bases.
Moreover, the STM32L151xD and STM32L152xD devices contain standard and advanced
communication interfaces: up to two I2Cs, three SPIs, two I2S, one SDIO, three USARTs,
two UARTs, and an USB. The STM32L151xD and STM32L152xD devices offer up to
34 capacitive sensing channels to simply add a touch sensing functionality to any
application.
They also include a real-time clock and a set of backup registers that remain powered in
Standby mode.
Finally, the integrated LCD controller (except STM32L151xD devices) has a built-in LCD
voltage generator that allows to drive up to 8 multiplexed LCDs with the contrast
independent of the supply voltage.
The ultra-low-power STM32L151xD and STM32L152xD devices operate from a 1.8 to 3.6 V
power supply (down to 1.65 V at power down) with BOR and from a 1.65 to 3.6 V power
supply without BOR option. They are available in the -40 to +85 C and -40 to +105 C
temperature ranges. A comprehensive set of power-saving modes allows the design of low-
power applications.

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57
Description STM32L151xD STM32L152xD

2.1 Device overview

Table 2. Ultra-low-power STM32L151xD and STM32L152xD device features
and peripheral counts
Peripheral STM32L15xRD STM32L15xVD STM32L15xQD STM32L15xZD

Flash (Kbytes) 384

Data EEPROM (Kbytes) 12

RAM (Kbytes) 48

FSMC No multiplexed only Yes

32 bit 1

General-
Timers 6
purpose

Basic 2

SPI 8(3)(1)

I2S 2

Communi- I2C 2
cation
interfaces USART 5

USB 1

SDIO 1

GPIOs 51 83 109 115

Operation amplifiers 3

12-bit synchronized ADC 1 1 1 1

Number of channels 21 25 40 40

12-bit DAC 2
Number of channels 2

LCD (STM32L152xx devices 1 1

only)
COM x SEG 4x32 or 8x28 4x44 or 8x40

Comparators 2

Capacitive sensing channels 23 33 34

Max. CPU frequency 32 MHz

1.8 V to 3.6 V (down to 1.65 V at power-down) with BOR option

Operating voltage
1.65 V to 3.6 V without BOR option

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STM32L151xD STM32L152xD Description

Table 2. Ultra-low-power STM32L151xD and STM32L152xD device features

and peripheral counts (continued)
Peripheral STM32L15xRD STM32L15xVD STM32L15xQD STM32L15xZD

Ambient operating temperature: -40 C to 85 C / -40 C to 105 C

Operating temperatures
Junction temperature: 40 to + 110 C
LQFP64,
Packages LQFP100 UFBGA132 LQFP144
WLCSP64
1. 5 SPIs are USART configured in synchronous mode emulating SPI master.

2.2 Ultra-low-power device continuum

The ultra-low-power family offers a large choice of cores and features. From proprietary 8-
bit to up to Cortex-M3, including the Cortex-M0+, the STM32Lx series are the best choice to
answer the user needs, in terms of ultra-low-power features. The STM32 ultra-low-power
series are the best fit, for instance, for gas/water meter, keyboard/mouse or fitness and
healthcare, wearable applications. Several built-in features like LCD drivers, dual-bank
memory, Low-power run mode, op-amp, AES 128-bit, DAC, USB crystal-less and many
others will clearly allow to build very cost-optimized applications by reducing BOM.
Note: STMicroelectronics as a reliable and long-term manufacturer ensures as much as possible
the pin-to-pin compatibility between any STM8Lxxxxx and STM32Lxxxxx devices and
between any of the STM32Lx and STM32Fx series. Thanks to this unprecedented
scalability, the old applications can be upgraded to respond to the latest market features and
efficiency demand.

2.2.1 Performance
All families incorporate highly energy-efficient cores with both Harvard architecture and
pipelined execution: advanced STM8 core for STM8L families and ARM Cortex-M3 core for
STM32L family. In addition specific care for the design architecture has been taken to
optimize the mA/DMIPS and mA/MHz ratios.
This allows the ultra-low-power performance to range from 5 up to 33.3 DMIPs.

2.2.2 Shared peripherals

STM8L15xxx, STM32L15xxx and STM32L162xx share identical peripherals which ensure a
very easy migration from one family to another:
Analog peripherals: ADC, DAC and comparators
Digital peripherals: RTC and some communication interfaces

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57
Description STM32L151xD STM32L152xD

2.2.3 Common system strategy.

To offer flexibility and optimize performance, the STM8L15xxx, STM32L15xxx and
STM32L162xx family uses a common architecture:
Same power supply range from 1.65 V to 3.6 V
Architecture optimized to reach ultra-low consumption both in low-power modes and
Run mode
Fast startup strategy from low-power modes
Flexible system clock
Ultrasafe reset: same reset strategy including power-on reset, power-down reset,
brownout reset and programmable voltage detector

2.2.4 Features
ST ultra-low-power continuum also lies in feature compatibility:
More than 15 packages with pin count from 20 to 144 pins and size down to 3 x 3 mm
Memory density ranging from 2 to 512 Kbytes

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STM32L151xD STM32L152xD Functional overview

3 Functional overview

Figure 1. Ultra-low-power STM32L151xD and STM32L152xD block diagram

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3.1 Low-power modes

The ultra-low-power STM32L151xD and STM32L152xD devices support dynamic voltage
scaling to optimize its power consumption in run mode. The voltage from the internal low-
drop regulator that supplies the logic can be adjusted according to the systems maximum
operating frequency and the external voltage supply.
There are three power consumption ranges:
Range 1 (VDD range limited to 1.71 V - 3.6 V), with the CPU running at up to 32 MHz
Range 2 (full VDD range), with a maximum CPU frequency of 16 MHz
Range 3 (full VDD range), with a maximum CPU frequency limited to 4 MHz (generated
only with the multispeed internal RC oscillator clock source)
Seven low-power modes are provided to achieve the best compromise between low-power
consumption, short startup time and available wakeup sources:
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs. Sleep mode power consumption at
16 MHz is about 1 mA with all peripherals off.
Low-power run mode
This mode is achieved with the multispeed internal (MSI) RC oscillator set to the
minimum clock (131 kHz), execution from SRAM or Flash memory, and internal
regulator in low-power mode to minimize the regulator's operating current. In low-power
run mode, the clock frequency and the number of enabled peripherals are both limited.
Low-power sleep mode
This mode is achieved by entering Sleep mode with the internal voltage regulator in
Low-power mode to minimize the regulators operating current. In Low-power sleep
mode, both the clock frequency and the number of enabled peripherals are limited; a
typical example would be to have a timer running at 32 kHz.
When wakeup is triggered by an event or an interrupt, the system reverts to the run
mode with the regulator on.
Stop mode with RTC
Stop mode achieves the lowest power consumption while retaining the RAM and
register contents and real time clock. All clocks in the VCORE domain are stopped, the
PLL, MSI RC, HSI RC and HSE crystal oscillators are disabled. The LSE or LSI is still
running. The voltage regulator is in the low-power mode.
The device can be woken up from Stop mode by any of the EXTI line, in 8 s. The EXTI
line source can be one of the 16 external lines. It can be the PVD output, the
Comparator 1 event or Comparator 2 event (if internal reference voltage is on), it can
be the RTC alarm(s), the USB wakeup, the RTC tamper events, the RTC timestamp
event or the RTC wakeup.

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Stop mode without RTC

Stop mode achieves the lowest power consumption while retaining the RAM and
register contents. All clocks are stopped, the PLL, MSI RC, HSI and LSI RC, LSE and
HSE crystal oscillators are disabled. The voltage regulator is in the low-power mode.
The device can be woken up from Stop mode by any of the EXTI line, in 8 s. The EXTI
line source can be one of the 16 external lines. It can be the PVD output, the
Comparator 1 event or Comparator 2 event (if internal reference voltage is on). It can
also be wakened by the USB wakeup.
Standby mode with RTC
Standby mode is used to achieve the lowest power consumption and real time clock.
The internal voltage regulator is switched off so that the entire VCORE domain is
powered off. The PLL, MSI RC, HSI RC and HSE crystal oscillators are also switched
off. The LSE or LSI is still running. After entering Standby mode, the RAM and register
contents are lost except for registers in the Standby circuitry (wakeup logic, IWDG,
RTC, LSI, LSE Crystal 32K osc, RCC_CSR).
The device exits Standby mode in 60 s when an external reset (NRST pin), an IWDG
reset, a rising edge on one of the three WKUP pins, RTC alarm (Alarm A or Alarm B),
RTC tamper event, RTC timestamp event or RTC Wakeup event occurs.
Standby mode without RTC
Standby mode is used to achieve the lowest power consumption. The internal voltage
regulator is switched off so that the entire VCORE domain is powered off. The PLL, MSI
RC, HSI and LSI RC, HSE and LSE crystal oscillators are also switched off. After
entering Standby mode, the RAM and register contents are lost except for registers in
the Standby circuitry (wakeup logic, IWDG, RTC, LSI, LSE Crystal 32K osc,
RCC_CSR).
The device exits Standby mode in 60 s when an external reset (NRST pin) or a rising
edge on one of the three WKUP pin occurs.
Note: The RTC, the IWDG, and the corresponding clock sources are not stopped automatically by
entering Stop or Standby mode.

Table 3. Functionalities depending on the operating power supply range

Functionalities depending on the operating power supply range

Operating power supply DAC and ADC Dynamic voltage

USB I/O operation
range operation scaling range

Range 2 or Degraded speed

VDD= VDDA = 1.65 to 1.71 V Not functional Not functional
Range 3 performance

Range 1, Range 2 Degraded speed

VDD=VDDA= 1.71 to 1.8 V(1) Not functional Not functional
or Range 3 performance

Range 1, Range 2
Conversion time up Degraded speed
VDD=VDDA= 1.8 to 2.0 V(1) Not functional or
to 500 Ksps performance
Range 3

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Table 3. Functionalities depending on the operating power supply range (continued)

Functionalities depending on the operating power supply range

Operating power supply DAC and ADC Dynamic voltage

USB I/O operation
range operation scaling range

Conversion time up Range 1, Range 2

VDD=VDDA = 2.0 to 2.4 V Functional(2) Full speed operation
to 500 Ksps or Range 3

Conversion time up Range 1, Range 2

VDD=VDDA = 2.4 to 3.6 V Functional(2) Full speed operation
to 1 Msps or Range 3
1. CPU frequency changes from initial to final must respect FCPU initial < 4*FCPU final to limit VCORE drop due to current
consumption peak when frequency increases. It must also respect 5 s delay between two changes. For example to switch
from 4.2 MHz to 32 MHz, the user can switch from 4.2 MHz to 16 MHz, wait 5 s, then switch from 16 MHz to 32 MHz.
2. Should be USB compliant from I/O voltage standpoint, the minimum VDD is 3.0 V.

Table 4. CPU frequency range depending on dynamic voltage scaling

CPU frequency range Dynamic voltage scaling range

16 MHz to 32 MHz (1ws)

Range 1
32 kHz to 16 MHz (0ws)
8 MHz to 16 MHz (1ws)
Range 2
32 kHz to 8 MHz (0ws)
2.1MHz to 4.2 MHz (1ws)
Range 3
32 kHz to 2.1 MHz (0ws)

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Table 5. Functionalities depending on the working mode (from Run/active down to

standby)
Stop Standby
Low- Low-
Ips Run/Active Sleep power power
Wakeup Wakeup
Run Sleep
capability capability

CPU Y -- Y -- -- -- -- --
Flash Y Y Y Y -- -- -- --
RAM Y Y Y Y Y -- -- --
Backup Registers Y Y Y Y Y -- Y --
EEPROM Y Y Y Y Y -- -- --
Brown-out rest
Y Y Y Y Y Y Y --
(BOR)
DMA Y Y Y Y -- -- -- --
Programmable
Voltage Detector Y Y Y Y Y Y Y --
(PVD)
Power On Reset
Y Y Y Y Y Y Y --
(POR)
Power Down Rest
Y Y Y Y Y -- Y --
(PDR)
High Speed
Y Y -- -- -- -- -- --
Internal (HSI)
High Speed
Y Y -- -- -- -- -- --
External (HSE)
Low Speed Internal
Y Y Y Y Y -- Y --
(LSI)
Low Speed
Y Y Y Y Y -- Y --
External (LSE)
Multi-Speed
Y Y Y Y -- -- -- --
Internal (MSI)
Inter-Connect
Y Y Y Y -- -- -- --
Controller
RTC Y Y Y Y Y Y Y --
RTC Tamper Y Y Y Y Y Y Y Y
Auto WakeUp
Y Y Y Y Y Y Y Y
(AWU)
LCD Y Y Y Y Y -- -- --
USB Y Y -- -- -- Y -- --
(1)
USART Y Y Y Y Y -- --
SPI Y Y Y Y -- -- -- --
(1)
I2C Y Y Y Y -- -- --

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Table 5. Functionalities depending on the working mode (from Run/active down to

standby) (continued)
Stop Standby
Low- Low-
Ips Run/Active Sleep power power
Wakeup Wakeup
Run Sleep
capability capability

ADC Y Y -- -- -- -- -- --
DAC Y Y Y Y Y -- -- --
Tempsensor Y Y Y Y Y -- -- --
OP amp Y Y Y Y Y -- -- --
Comparators Y Y Y Y Y Y -- --
16-bit and 32-bit
Y Y Y Y -- -- -- --
Timers
IWDG Y Y Y Y Y Y Y Y
WWDG Y Y Y Y -- -- -- --
Touch sensing Y Y -- -- -- -- -- --
Systic Timer Y Y Y Y -- -- --
GPIOs Y Y Y Y Y Y -- 3 pins
Wakeup time to
0 s 0.4 s 3 s 46 s < 8 s 58 s
Run mode
0.475 A 0.305 A
(no RTC) (no RTC)
VDD=1.8V VDD=1.8V
1.1 A 0.82 A
(with RTC) (with RTC)
Consumption Down to 230 Down to 43 VDD=1.8V VDD=1.8V
Down to Down to
VDD=1.8 to 3.6 V A/MHz (from A/MHz (from
11 A 4.4 A 0.475 A 0.305 A
(Typ) Flash) Flash)
(no RTC) (no RTC)
VDD=3.0V VDD=3.0V
1.35 A 1.15 A
(with RTC) (with RTC)
VDD=3.0V VDD=3.0V
1. The startup on communication line wakes the CPU which was made possible by an EXTI, this induces a delay before
entering run mode.

3.2 ARM Cortex-M3 core with MPU

The ARM Cortex-M3 processor is the industry leading processor for embedded systems.
It has been developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced system response to interrupts.
The ARM Cortex-M3 32-bit RISC processor features exceptional code-efficiency,
delivering the high-performance expected from an ARM core in the memory size usually
associated with 8- and 16-bit devices.

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The memory protection unit (MPU) improves system reliability by defining the memory
attributes (such as read/write access permissions) for different memory regions. It provides
up to eight different regions and an optional predefined background region.
Owing to its embedded ARM core, the STM32L151xD and STM32L152xD devices are
compatible with all ARM tools and software.

Nested vectored interrupt controller (NVIC)

The ultra-low-power STM32L151xD and STM32L152xD devices embed a nested vectored
interrupt controller able to handle up to 56 maskable interrupt channels (not including the 16
interrupt lines of ARM Cortex-M3) and 16 priority levels.
Closely coupled NVIC gives low-latency interrupt processing
Interrupt entry vector table address passed directly to the core
Closely coupled NVIC core interface
Allows early processing of interrupts
Processing of late arriving, higher-priority interrupts
Support for tail-chaining
Processor state automatically saved
Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimal interrupt
latency.

3.3 Reset and supply management

3.3.1 Power supply schemes

VDD = 1.65 to 3.6 V: external power supply for I/Os and the internal regulator. Provided
externally through VDD pins.
VSSA, VDDA = 1.65 to 3.6 V: external analog power supplies for ADC, reset blocks, RCs
and PLL (minimum voltage to be applied to VDDA is 1.8 V when the ADC is used). VDDA
and VSSA must be connected to VDD and VSS, respectively.

3.3.2 Power supply supervisor

The device has an integrated ZEROPOWER power-on reset (POR)/power-down reset
(PDR) that can be coupled with a brownout reset (BOR) circuitry.
The device exists in two versions:
The version with BOR activated at power-on operates between 1.8 V and 3.6 V.
The other version without BOR operates between 1.65 V and 3.6 V.
After the VDD threshold is reached (1.65 V or 1.8 V depending on the BOR which is active or
not at power-on), the option byte loading process starts, either to confirm or modify default
thresholds, or to disable the BOR permanently: in this case, the VDD min value becomes
1.65 V (whatever the version, BOR active or not, at power-on).
When BOR is active at power-on, it ensures proper operation starting from 1.8 V whatever
the power ramp-up phase before it reaches 1.8 V. When BOR is not active at power-up, the

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power ramp-up should guarantee that 1.65 V is reached on VDD at least 1 ms after it exits
the POR area.
Five BOR thresholds are available through option bytes, starting from 1.8 V to 3 V. To
reduce the power consumption in Stop mode, it is possible to automatically switch off the
internal reference voltage (VREFINT) in Stop mode. The device remains in reset mode when
VDD is below a specified threshold, VPOR/PDR or VBOR, without the need for any external
reset circuit.
Note: The start-up time at power-on is typically 3.3 ms when BOR is active at power-up, the start-
up time at power-on can be decreased down to 1 ms typically for devices with BOR inactive
at power-up.
The device features an embedded programmable voltage detector (PVD) that monitors the
VDD/VDDA power supply and compares it to the VPVD threshold. This PVD offers 7 different
levels between 1.85 V and 3.05 V, chosen by software, with a step around 200 mV. An
interrupt can be generated when VDD/VDDA drops below the VPVD threshold and/or when
VDD/VDDA is higher than the VPVD threshold. The interrupt service routine can then generate
a warning message and/or put the MCU into a safe state. The PVD is enabled by software.

3.3.3 Voltage regulator

The regulator has three operation modes: main (MR), low-power (LPR) and power down.
MR is used in Run mode (nominal regulation)
LPR is used in the Low-power run, Low-power sleep and Stop modes
Power down is used in Standby mode. The regulator output is high impedance, the
kernel circuitry is powered down, inducing zero consumption but the contents of the
registers and RAM are lost except for the standby circuitry (wakeup logic, IWDG, RTC,
LSI, LSE crystal 32K osc, RCC_CSR).

3.3.4 Boot modes

At startup, boot pins are used to select one of three boot options:
Boot from Flash memory
Boot from System memory
Boot from embedded RAM
The boot loader is located in System memory. It is used to reprogram the Flash memory by
using USART1, USART2 or USB. See Application note STM32 microcontroller system
memory boot mode (AN2606) for details.

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3.4 Clock management

The clock controller distributes the clocks coming from different oscillators to the core and
the peripherals. It also manages clock gating for low-power modes and ensures clock
robustness. It features:
Clock prescaler: to get the best trade-off between speed and current consumption, the
clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler.
Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
System clock source: three different clock sources can be used to drive the master
clock SYSCLK:
1-24 MHz high-speed external crystal (HSE), that can supply a PLL
16 MHz high-speed internal RC oscillator (HSI), trimmable by software, that can
supply a PLL
Multispeed internal RC oscillator (MSI), trimmable by software, able to generate 7
frequencies (65 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.1 MHz, 4.2 MHz).
When a 32.768 kHz clock source is available in the system (LSE), the MSI
frequency can be trimmed by software down to a 0.5% accuracy.
Auxiliary clock source: two ultra-low-power clock sources that can be used to drive
the LCD controller and the real-time clock:
32.768 kHz low-speed external crystal (LSE)
37 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.
The LSI clock can be measured using the high-speed internal RC oscillator for
greater precision.
RTC and LCD clock sources: the LSI, LSE or HSE sources can be chosen to clock
the RTC and the LCD, whatever the system clock.
USB clock source: the embedded PLL has a dedicated 48 MHz clock output to supply
the USB interface.
Startup clock: after reset, the microcontroller restarts by default with an internal 2 MHz
clock (MSI). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
Clock security system (CSS): this feature can be enabled by software. If a HSE clock
failure occurs, the master clock is automatically switched to HSI and a software
interrupt is generated if enabled.
Clock-out capability (MCO: microcontroller clock output): it outputs one of the
internal clocks for external use by the application.
Several prescalers allow the configuration of the AHB frequency, each APB (APB1 and
APB2) domains. The maximum frequency of the AHB and the APB domains is 32 MHz. See
Figure 2 for details on the clock tree.

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Functional overview STM32L151xD STM32L152xD

Figure 2. Clock tree

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-36

1. For the USB function to be available, both HSE and PLL must be enabled, with the CPU running at either
24 MHz or 32 MHz.

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3.5 Low-power real-time clock and backup registers

The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the sub-second, second, minute, hour (12/24 hour), week day, date, month, year, in BCD
(binary-coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the
month are made automatically. The RTC provides two programmable alarms and
programmable periodic interrupts with wakeup from Stop and Standby modes.
The programmable wakeup time ranges from 120 s to 36 hours.
The RTC can be calibrated with an external 512 Hz output, and a digital compensation
circuit helps reduce drift due to crystal deviation.
The RTC can also be automatically corrected with a 50/60Hz stable powerline.
The RTC calendar can be updated on the fly down to sub second precision, which enables
network system synchronization.
A time stamp can record an external event occurrence, and generates an interrupt.
There are thirty-two 32-bit backup registers provided to store 128 bytes of user application
data. They are cleared in case of tamper detection.
Three pins can be used to detect tamper events. A change on one of these pins can reset
backup register and generate an interrupt. To prevent false tamper event, like ESD event,
these three tamper inputs can be digitally filtered.

3.6 GPIOs (general-purpose inputs/outputs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions, and can be individually
remapped using dedicated AFIO registers. All GPIOs are high current capable. The
alternate function configuration of I/Os can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/O registers. The I/O controller is
connected to the AHB with a toggling speed of up to 16 MHz.

External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 24 edge detector lines used to generate
interrupt/event requests. Each line can be individually configured to select the trigger event
(rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 115 GPIOs can be connected
to the 16 external interrupt lines. The 8 other lines are connected to RTC, PVD, USB,
comparator events or capacitive sensing acquisition.

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3.7 Memories
The STM32L151xD and STM32L152xD devices have the following features:
48 Kbytes of embedded RAM accessed (read/write) at CPU clock speed with 0 wait
states. With the enhanced bus matrix, operating the RAM does not lead to any
performance penalty during accesses to the system bus (AHB and APB buses).
The non-volatile memory is divided into three arrays:
384 Kbytes of embedded Flash program memory
12 Kbytes of data EEPROM
Options bytes
Flash program and data EEPROM are divided into two banks, this enables writing in
one bank while running code or reading data in the other bank.
The options bytes are used to write-protect or read-out protect the memory (with 4
Kbytes granularity) and/or readout-protect the whole memory with the following
options:
Level 0: no readout protection
Level 1: memory readout protection, the Flash memory cannot be read from or
written to if either debug features are connected or boot in RAM is selected
Level 2: chip readout protection, debug features (ARM Cortex-M3 JTAG and serial
wire) and boot in RAM selection disabled (JTAG fuse)
The whole non-volatile memory embeds the error correction code (ECC) feature.

3.8 FSMC (flexible static memory controller)

The FSMC supports the following modes: SRAM, PSRAM, NOR/OneNAND Flash.
Functionality overview:
Up to 26 bit address bus
Up to 16-bit data bus
Write FIFO
Burst mode
Code execution from external memory
Four chip select signals
Up to 32 MHz external access

3.9 DMA (direct memory access)

The flexible 12-channel, general-purpose DMA is able to manage memory-to-memory,
peripheral-to-memory and memory-to-peripheral transfers. The DMA controller supports
circular buffer management, avoiding the generation of interrupts when the controller
reaches the end of the buffer.
Each channel is connected to dedicated hardware DMA requests, with software trigger
support for each channel. Configuration is done by software and transfer sizes between
source and destination are independent.

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The DMA can be used with the main peripherals: SPI, I2C, USART, SDIO, general-purpose
timers, DAC and ADC.

3.10 LCD (liquid crystal display)

The LCD drives up to 8 common terminals and 44 segment terminals to drive up to 320
pixels.
Internal step-up converter to guarantee functionality and contrast control irrespective of
VDD. This converter can be deactivated, in which case the VLCD pin is used to provide
the voltage to the LCD
Supports static, 1/2, 1/3, 1/4 and 1/8 duty
Supports static, 1/2, 1/3 and 1/4 bias
Phase inversion to reduce power consumption and EMI
Up to 8 pixels can be programmed to blink
Unneeded segments and common pins can be used as general I/O pins
LCD RAM can be updated at any time owing to a double-buffer
The LCD controller can operate in Stop mode

3.11 ADC (analog-to-digital converter)

A 12-bit analog-to-digital converters is embedded into STM32L151xD and STM32L152xD
devices with up to 40 external channels, performing conversions in single-shot or scan
mode. In scan mode, automatic conversion is performed on a selected group of analog
inputs with up to 28 external channels in a group.
The ADC can be served by the DMA controller.
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all scanned channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) can be internally connected to
the ADC start triggers, to allow the application to synchronize A/D conversions and timers.
An injection mode allows high priority conversions to be done by interrupting a scan mode
which runs in as a background task.
The ADC includes a specific low-power mode. The converter is able to operate at maximum
speed even if the CPU is operating at a very low frequency and has an auto-shutdown
function. The ADCs runtime and analog front-end current consumption are thus minimized
whatever the MCU operating mode.

3.11.1 Temperature sensor

The temperature sensor (TS) generates a voltage VSENSE that varies linearly with
temperature.
The temperature sensor is internally connected to the ADC_IN16 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies

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from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode. See Table 69:
Temperature sensor calibration values.

3.11.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC and Comparators. VREFINT is internally connected to the ADC_IN17 input channel. It
enables accurate monitoring of the VDD value (when no external voltage, VREF+, is
available for ADC). The precise voltage of VREFINT is individually measured for each part by
ST during production test and stored in the system memory area. It is accessible in read-
only mode. See Table 15: Embedded internal reference voltage calibration values.

3.12 DAC (digital-to-analog converter)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs. The chosen design structure is composed of integrated
resistor strings and an amplifier in non-inverting configuration.
This dual digital Interface supports the following features:
Two DAC converters: one for each output channel
8-bit or 12-bit monotonic output
Left or right data alignment in 12-bit mode
Synchronized update capability
Noise-wave generation
Triangular-wave generation
Dual DAC channels, independent or simultaneous conversions
DMA capability for each channel (including the underrun interrupt)
External triggers for conversion
Input reference voltage VREF+
Eight DAC trigger inputs are used in the STM32L151xD and STM32L152xD devices. The
DAC channels are triggered through the timer update outputs that are also connected to
different DMA channels.

3.13 Operational amplifier

The STM32L151xD and STM32L152xD devices embed three operational amplifiers with
external or internal follower routing capability (or even amplifier and filter capability with
external components). When one operational amplifier is selected, one external ADC
channel is used to enable output measurement.

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The operational amplifiers feature:

Low input bias current
Low offset voltage
Low-power mode
Rail-to-rail input

3.14 Ultra-low-power comparators and reference voltage

The STM32L151xD and STM32L152xD devices embed two comparators sharing the same
current bias and reference voltage. The reference voltage can be internal or external
(coming from an I/O).
One comparator with fixed threshold
One comparator with rail-to-rail inputs, fast or slow mode. The threshold can be one of
the following:
DAC output
External I/O
Internal reference voltage (VREFINT) or a sub-multiple (1/4, 1/2, 3/4)
Both comparators can wake up from Stop mode, and be combined into a window
comparator.
The internal reference voltage is available externally via a low-power / low-current output
buffer (driving current capability of 1 A typical).

3.15 System configuration controller and routing interface

The system configuration controller provides the capability to remap some alternate
functions on different I/O ports.
The highly flexible routing interface allows the application firmware to control the routing of
different I/Os to the TIM2, TIM3 and TIM4 timer input captures. It also controls the routing of
internal analog signals to ADC1, COMP1 and COMP2 and the internal reference voltage
VREFINT.

3.16 Touch sensing

The STM32L151xD and STM32L152xD devices provide a simple solution for adding
capacitive sensing functionality to any application. These devices offer up to 34 capacitive
sensing channels distributed over 11 analog I/O groups. Both software and timer capacitive
sensing acquisition modes are supported.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic...). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists of
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. The capacitive sensing acquisition only requires few external components to

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operate. This acquisition is managed directly by the GPIOs, timers and analog I/O groups
(see Section 3.15: System configuration controller and routing interface).
Reliable touch sensing functionality can be quickly and easily implemented using the free
STM32L1xx STMTouch touch sensing firmware library.

3.17 Timers and watchdogs

The ultra-low-power STM32L151xD and STM32L152xD devices include seven general-
purpose timers, two basic timers, and two watchdog timers.
Table 6 compares the features of the general-purpose and basic timers.

Table 6. Timer feature comparison

DMA
Counter Capture/compare Complementary
Timer Counter type Prescaler factor request
resolution channels outputs
generation

TIM2,
Up, down, Any integer between
TIM3, 16-bit Yes 4 No
up/down 1 and 65536
TIM4
Up, down, Any integer between
TIM5 32-bit Yes 4 No
up/down 1 and 65536
Up, down, Any integer between
TIM9 16-bit No 2 No
up/down 1 and 65536
TIM10, Any integer between
16-bit Up No 1 No
TIM11 1 and 65536
TIM6, Any integer between
16-bit Up Yes 0 No
TIM7 1 and 65536

3.17.1 General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM9, TIM10 and
TIM11)
There are seven synchronizable general-purpose timers embedded in the STM32L151xD
and STM32L152xD devices (see Table 6 for differences).

TIM2, TIM3, TIM4, TIM5

TIM2, TIM3, TIM4 are based on 16-bit auto-reload up/down counter. TIM5 is based on a 32-
bit auto-reload up/down counter. They include a 16-bit prescaler. They feature four
independent channels each for input capture/output compare, PWM or one-pulse mode
output. This gives up to 16 input captures/output compares/PWMs on the largest packages.
TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together or with the TIM10,
TIM11 and TIM9 general-purpose timers via the Timer Link feature for synchronization or
event chaining. Their counter can be frozen in debug mode. Any of the general-purpose
timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation.
These timers are capable of handling quadrature (incremental) encoder signals and the
digital outputs from 1 to 3 hall-effect sensors.

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TIM10, TIM11 and TIM9

TIM10 and TIM11 are based on a 16-bit auto-reload upcounter. TIM9 is based on a 16-bit
auto-reload up/down counter. They include a 16-bit prescaler. TIM10 and TIM11 feature one
independent channel, whereas TIM9 has two independent channels for input capture/output
compare, PWM or one-pulse mode output. They can be synchronized with the TIM2, TIM3,
TIM4, TIM5 full-featured general-purpose timers.
They can also be used as simple time bases and be clocked by the LSE clock source
(32.768 kHz) to provide time bases independent from the main CPU clock.

3.17.2 Basic timers (TIM6 and TIM7)

These timers are mainly used for DAC trigger generation. They can also be used as generic
16-bit time bases.

3.17.3 SysTick timer

This timer is dedicated to the OS, but could also be used as a standard downcounter. It is
based on a 24-bit downcounter with autoreload capability and a programmable clock
source. It features a maskable system interrupt generation when the counter reaches 0.

3.17.4 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 37 kHz internal RC and, as it operates independently of the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes. The counter
can be frozen in debug mode.

3.17.5 Window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

3.18 Communication interfaces

3.18.1 IC bus
Up to two IC bus interfaces can operate in multimaster and slave modes. They can support
standard and fast modes.
They support dual slave addressing (7-bit only) and both 7- and 10-bit addressing in master
mode. A hardware CRC generation/verification is embedded.
They can be served by DMA and they support SM Bus 2.0/PM Bus.

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3.18.2 Universal synchronous/asynchronous receiver transmitter (USART)

The three USART and two UART interfaces are able to communicate at speeds of up to 4
Mbit/s. They support IrDA SIR ENDEC and have LIN Master/Slave capability. The three
USARTs provide hardware management of the CTS and RTS signals and are ISO 7816
compliant.
All USART/UART interfaces can be served by the DMA controller.

3.18.3 Serial peripheral interface (SPI)

Up to three SPIs are able to communicate at up to 16 Mbits/s in slave and master modes in
full-duplex and half-duplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes.
The SPIs can be served by the DMA controller.

3.18.4 Inter-integrated sound (I2S)

Two standard I2S interfaces (multiplexed with SPI2 and SPI3) are available. They can
operate in master or slave mode, and can be configured to operate with a 16-/32-bit
resolution as input or output channels. Audio sampling frequencies from 8 kHz up to 192
kHz are supported. When either or both of the I2S interfaces is/are configured in master
mode, the master clock can be output to the external DAC/CODEC at 256 times the
sampling frequency.
The I2Ss can be served by the DMA controller.

3.18.5 SDIO
An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 24 MHz in 8-bit mode, and is compliant with the
SD Memory Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC, this interface is fully compliant with the CE-ATA digital
protocol Rev1.1.

3.18.6 Universal serial bus (USB)

The STM32L151xD and STM32L152xD devices embed a USB device peripheral
compatible with the USB full-speed 12 Mbit/s. The USB interface implements a full-speed
(12 Mbit/s) function interface. It has software-configurable endpoint setting and supports
suspend/resume. The dedicated 48 MHz clock is generated from the internal main PLL (the
clock source must use a HSE crystal oscillator).

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3.19 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link-
time and stored at a given memory location.

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3.20 Development support

3.20.1 Serial wire JTAG debug port (SWJ-DP)

The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG JTMS and JTCK pins are shared with SWDAT and SWCLK, respectively, and a
specific sequence on the JTMS pin is used to switch between JTAG-DP and SW-DP.
The JTAG port can be permanently disabled with a JTAG fuse.

3.20.2 Embedded Trace Macrocell

The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and
data flow inside the CPU core by streaming compressed data at a very high rate from the
STM32L151xD and STM32L152xD device through a small number of ETM pins to an
external hardware trace port analyzer (TPA) device. The TPA is connected to a host
computer using USB, Ethernet, or any other high-speed channel. Real-time instruction and
data flow activity can be recorded and then formatted for display on the host computer
running debugger software. TPA hardware is commercially available from common
development tool vendors. It operates with third party debugger software tools.

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4 Pin descriptions

Figure 3. STM32L15xZD LQFP144 pinout

"//4

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-36

1. This figure shows the package top view.

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Pin descriptions STM32L151xD STM32L152xD

Figure 4. STM32L15xQD UFBGA132 ballout

           

0% 0% 0" "//4 0$ 0$ 0" 0" 0! 0! 0! 0!
!

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0" 0" 0% 0% 0% 0% 0% 0%

-36

1. This figure shows the package top view.

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Figure 5. STM32L15xVD LQFP100 pinout

"//4
6$$?
633?

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AIC

1. This figure shows the package top view.

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Pin descriptions STM32L151xD STM32L152xD

Figure 6. STM32L15xRD LQFP64 pinout

"//4
6$$?
633?

0#
0#
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AIC

1. This figure shows the package top view.

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Figure 7. STM32L15xRD WLCSP64 ballout

       

! 6$$? 0# 0$ 0" 0" "//4 633? 6$$?

0#
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-36

1. This figure shows the package top view.

Table 7. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function
Pin name
during and after reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TC Standard 3.3 V I/O
I/O structure
B Dedicated BOOT0 pin
RST Bidirectional reset pin with embedded weak pull-up resistor

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Table 7. Legend/abbreviations used in the pinout table (continued)

Name Abbreviation Definition

Unless otherwise specified by a note, all I/Os are set as floating inputs during
Notes
and after reset
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin
functions Additional
Functions directly selected/enabled through peripheral registers
functions

Table 8. STM32L151xD and STM32L152xD pin definitions

Pins I / O structure Pin functions
Pin Type(1)

Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

TIM3_ETR/LCD_SEG38/
1 B2 1 - - PE2 I/O FT PE2 -
TRACECLK/FSMC_A23
TIM3_CH1/LCD_SEG39/
2 A1 2 - - PE3 I/O FT PE3 -
TRACED0/FSMC_A19
TIM3_CH2/TRACED1
3 B1 3 - - PE4 I/O FT PE4 -
/FSMC_A20
TIM9_CH1/TRACED2
4 C2 4 - - PE5 I/O FT PE5 -
/FSMC_A21
PE6- WKUP3/
5 D2 5 - - I/O FT PE6 TIM9_CH2/TRACED3
WKUP3 RTC_TAMP3
6 E2 6 1 C6 VLCD(3) S - VLCD - -
WKUP2/
PC13- RTC_TAMP1/
7 C1 7 2 C8 I/O FT PC13 -
WKUP2 RTC_TS/
RTC_OUT
PC14-
8 D1 8 3 B8 I/O TC PC14 - OSC32_IN
OSC32_IN(4)
PC15-
9 E1 9 4 B7 I/O TC PC15 - OSC32_OUT
OSC32_OUT
10 D6 - - - PF0 I/O FT PF0 FSMC_A0 -
11 D5 - - - PF1 I/O FT PF1 FSMC_A1 -
12 D4 - - - PF2 I/O FT PF2 FSMC_A2 -
13 E4 - - - PF3 I/O FT PF3 FSMC_A3 -

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Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

14 F3 - - - PF4 I/O FT PF4 FSMC_A4 -

15 F4 - - - PF5 I/O FT PF5 FSMC_A5 -
16 F2 10 - - VSS_5 S - VSS_5 - -
17 G2 11 - - VDD_5 S - VDD_5 - -
18 G3 - - - PF6 I/O FT PF6 TIM5_CH1/TIM5_ETR ADC_IN27
ADC_IN28/
19 G4 - - - PF7 I/O FT PF7 TIM5_CH2
COMP1_INP
ADC_IN29/
20 H4 - - - PF8 I/O FT PF8 TIM5_CH3
COMP1_INP
ADC_IN30/
21 J6 - - - PF9 I/O FT PF9 TIM5_CH4
COMP1_INP
ADC_IN31/
22 - - - - PF10 I/O FT PF10 -
COMP1_INP
PH0-
23 F1 12 5 D8 I/O TC PH0 - OSC_IN
OSC_IN(5)
PH1-
24 G1 13 6 D7 I/O TC PH1 - OSC_OUT
OSC_OUT(5)
25 H2 14 7 C7 NRST I/O RST NRST - -
ADC_IN10/
26 H1 15 8 E8 PC0 I/O FT PC0 LCD_SEG18
COMP1_INP
ADC_IN11/
27 J2 16 9 F8 PC1 I/O FT PC1 LCD_SEG19 COMP1_INP
OPAMP3_VINP
ADC_IN12/
28 - 17 10 D6 PC2 I/O FT PC2 LCD_SEG20 COMP1_INP
OPAMP3_VINM
ADC_IN12/
- J3 - - - PC2 I/O FT PC2 LCD_SEG20
COMP1_INP
OPAMP3_VI OPAMP3
- K1 - - - I - - -
NM _VINM
ADC_IN13/
29 K2 18 11 F7 PC3 I/O TC PC3 LCD_SEG21 COMP1_INP/
OPAMP3_VOUT
30 J1 19 12 E7 VSSA S - VSSA - -

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Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

31 - 20 - - VREF- S - VREF- - -
32 L1 21 - - VREF+ S - VREF+ - -
33 M1 22 13 G8 VDDA S - VDDA - -
WKUP1/
TIM2_CH1_ETR/ RTC_TAMP2/
34 L2 23 14 F6 PA0-WKUP1 I/O FT PA0
TIM5_CH1/ USART2_CTS ADC_IN0/
COMP1_INP
TIM2_CH2/TIM5_CH2/ ADC_IN1/
35 M2 24 15 E6 PA1 I/O FT PA1 USART2_RTS/ COMP1_INP/
LCD_SEG0 OPAMP1_VINP
TIM2_CH3/TIM5_CH3/ ADC_IN2/
36 - 25 16 H8 PA2 I/O FT PA2 TIM9_CH1/ COMP1_INP/
USART2_TX/LCD_SEG1 OPAMP1_VINM
TIM2_CH3/TIM5_CH3/
ADC_IN2/
- K3 - - - PA2 I/O FT PA2 TIM9_CH1/
COMP1_INP
USART2_TX/LCD_SEG1
OPAMP1_VI OPAMP1_
- M3 - - - I TC - -
NM VINM
TIM2_CH4/TIM5_CH4/ ADC_IN3/
37 L3 26 17 G7 PA3 I/O TC PA3 TIM9_CH2/ COMP1_INP/
USART2_RX/LCD_SEG2 OPAMP1_VOUT
38 - 27 18 F5 VSS_4 S - VSS_4 - -
39 - 28 19 G6 VDD_4 S - VDD_4 - -
ADC_IN4/
SPI1_NSS/SPI3_NSS/
40 J4 29 20 H7 PA4 I/O TC PA4 DAC_OUT1/
I2S3_WS/USART2_CK
COMP1_INP
ADC_IN5/
TIM2_CH1_ETR/
41 K4 30 21 E5 PA5 I/O TC PA5 DAC_OUT2/
SPI1_SCK
COMP1_INP
TIM3_CH1/TIM10_CH1/ ADC_IN6/
42 L4 31 22 G5 PA6 I/O FT PA6 SPI1_MISO/ COMP1_INP/
LCD_SEG3 OPAMP2_VINP
TIM3_CH2/TIM11_CH1/ ADC_IN7/
43 - 32 23 G4 PA7 I/O FT PA7 SPI1_MOSI/ COMP1_INP/
LCD_SEG4 OPAMP2_VINM

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Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

TIM3_CH2/TIM11_CH1/
ADC_IN7/
- J5 - - - PA7 I/O FT PA7 SPI1_MOSI/
COMP1_INP
LCD_SEG4
OPAMP2_VI OPAMP2_V
- M4 - - - I TC - -
NM INM
ADC_IN14/
44 K5 33 24 H6 PC4 I/O FT PC4 LCD_SEG22
COMP1_INP
ADC_IN15/
45 L5 34 25 H5 PC5 I/O FT PC5 LCD_SEG23
COMP1_INP
ADC_IN8/
COMP1_INP/
46 M5 35 26 H4 PB0 I/O TC PB0 TIM3_CH3/LCD_SEG5
OPAMP2_VOUT/
VREF_OUT
ADC_IN9/
47 M6 36 27 F4 PB1 I/O FT PB1 TIM3_CH4/LCD_SEG6 COMP1_INP/
VREF_OUT
PB2/
48 L6 37 28 H3 PB2 I/O FT BOOT1 ADC_IN0b
BOOT1
49 K6 - - - PF11 I/O FT PF11 - ADC_IN1b
50 J7 - - - PF12 I/O FT PF12 FSMC_A6 ADC_IN2b
51 E3 - - - VSS_6 S - VSS_6 - -
52 H3 - - - VDD_6 S - VDD_6 - -
53 K7 - - - PF13 I/O FT PF13 FSMC_A7 ADC_IN3b
54 J8 - - - PF14 I/O FT PF14 FSMC_A8 ADC_IN6b
55 J9 - - - PF15 I/O FT PF15 FSMC_A9 ADC_IN7b
56 H9 - - - PG0 I/O FT PG0 FSMC_A10 ADC_IN8b
57 G9 - - - PG1 I/O FT PG1 FSMC_A11 ADC_IN9b
ADC_IN22/
58 M7 38 - - PE7 I/O TC PE7 FSMC_D4
COMP1_INP
ADC_IN23/
59 L7 39 - - PE8 I/O TC PE8 FSMC_D5
COMP1_INP
ADC_IN24/
60 M8 40 - - PE9 I/O TC PE9 TIM2_CH1_ETR /FSMC_D6
COMP1_INP

DocID022027 Rev 11 43/154

57
Pin descriptions STM32L151xD STM32L152xD

Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

61 - - - - VSS_7 S - VSS_7 - -
62 - - - - VDD_7 S - VDD_7 - -
ADC_IN25/
63 L8 41 - - PE10 I/O TC PE10 TIM2_CH2/FSMC_D7
COMP1_INP
64 M9 42 - - PE11 I/O FT PE11 TIM2_CH3/FSMC_D8 -
TIM2_CH4/SPI1_NSS
65 L9 43 - - PE12 I/O FT PE12 -
/FSMC_D9
66 M10 44 - - PE13 I/O FT PE13 SPI1_SCK/FSMC_D10 -
67 M11 45 - - PE14 I/O FT PE14 SPI1_MISO/FSMC_D11 -
68 M12 46 - - PE15 I/O FT PE15 SPI1_MOSI/FSMC_D12 -
TIM2_CH3/I2C2_SCL/
69 L10 47 29 G3 PB10 I/O FT PB10 USART3_TX/ -
LCD_SEG10
TIM2_CH4/ I2C2_SDA/
70 L11 48 30 F3 PB11 I/O FT PB11 -
USART3_RX/ LCD_SEG11
71 F12 49 31 H2 VSS_1 S - VSS_1 - -
72 G12 50 32 H1 VDD_1 S - VDD_1 - -
TIM10_CH1/I2C2_SMBA/
ADC_IN18/
73 L12 51 33 G2 PB12 I/O FT PB12 SPI2_NSS/ I2S2_WS/
COMP1_INP
USART3_CK/ LCD_SEG12
TIM9_CH1/SPI2_SCK/
I2S2_CK/ ADC_IN19/
74 K12 52 34 G1 PB13 I/O FT PB13
USART3_CTS/ COMP1_INP
LCD_SEG13
TIM9_CH2/SPI2_MISO/ ADC_IN20/
75 K11 53 35 F2 PB14 I/O FT PB14 USART3_RTS/ COMP1_INP
LCD_SEG14
TIM11_CH1/SPI2_MOSI/ ADC_IN21/
76 K10 54 36 F1 PB15 I/O FT PB15 I2S2_SD/ COMP1_INP/
LCD_SEG15 RTC_REFIN

USART3_TX/LCD_SEG28/
77 K9 55 - - PD8 I/O FT PD8 -
FSMC_D13
USART3_RX/LCD_SEG29/
78 K8 56 - - PD9 I/O FT PD9 -
FSMC_D14

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STM32L151xD STM32L152xD Pin descriptions

Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

USART3_CK/LCD_SEG30/
79 J12 57 - - PD10 I/O FT PD10 -
FSMC_D15
USART3_CTS/LCD_SEG31
80 J11 58 - - PD11 I/O FT PD11 -
/FSMC_A16
TIM4_CH1/USART3_RTS/
81 J10 59 - - PD12 I/O FT PD12 LCD_SEG32/ -
FSMC_A17
TIM4_CH2/LCD_SEG33/
82 H12 60 - - PD13 I/O FT PD13 -
FSMC_A18
83 - - - - VSS_8 S - VSS_8 - -
84 - - - - VDD_8 S - VDD_8 - -
TIM4_CH3/LCD_SEG34/
85 H11 61 - - PD14 I/O FT PD14 -
FSMC_D0
TIM4_CH4/LCD_SEG35
86 H10 62 - - PD15 I/O FT PD15 -
/FSMC_D1
87 G10 - - - PG2 I/O FT PG2 FSMC_A12 ADC_IN10b
88 F9 - - - PG3 I/O FT PG3 FSMC_A13 ADC_IN11b
89 F10 - - - PG4 I/O FT PG4 FSMC_A14 ADC_IN12b
90 E9 - - - PG5 I/O FT PG5 FSMC_A15 -
91 - - - - PG6 I/O FT PG6 - -
92 - - - - PG7 I/O FT PG7 - -
93 - - - - PG8 I/O FT PG8 - -
94 F6 - - - VSS_9 S VSS_9 - -
95 G6 - - - VDD_9 S VDD_9 - -
TIM3_CH1/I2S2_MCK/
96 E12 63 37 E1 PC6 I/O FT PC6 -
LCD_SEG24/SDIO_D6
TIM3_CH2/I2S3_MCK/
97 E11 64 38 E2 PC7 I/O FT PC7 -
LCD_SEG25/SDIO_D7
TIM3_CH3/LCD_SEG26/
98 E10 65 39 E3 PC8 I/O FT PC8 -
SDIO_D0
TIM3_CH4/LCD_SEG27/
99 D12 66 40 D1 PC9 I/O FT PC9 -
SDIO_D1

DocID022027 Rev 11 45/154

57
Pin descriptions STM32L151xD STM32L152xD

Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

USART1_CK/MCO/
100 D11 67 41 E4 PA8 I/O FT PA8 -
LCD_COM0
101 D10 68 42 D2 PA9 I/O FT PA9 USART1_TX / LCD_COM1 -
102 C12 69 43 D3 PA10 I/O FT PA10 USART1_RX / LCD_COM2 -
103 B12 70 44 C1 PA11 I/O FT PA11 USART1_CTS/ SPI1_MISO USB_DM
104 A12 71 45 C2 PA12 I/O FT PA12 USART1_RTS/ SPI1_MOSI USB_DP
JTMS-
105 A11 72 46 D4 PA13 I/O FT JTMS-SWDIO -
SWDIO
106 C11 73 - - PH2 I/O FT PH2 FSMC_A22 -
107 F11 74 47 B1 VSS_2 S - VSS_2 - -
108 G11 75 48 A1 VDD_2 S - VDD_2 - -
JTCK-
109 A10 76 49 B2 PA14 I/O FT JTCK-SWCLK -
SWCLK
TIM2_CH1_ETR/
SPI1_NSS/SPI3_NSS/
110 A9 77 50 C3 PA15 I/O FT JTDI -
I2S3_WS/LCD_SEG17/
JTDI
SPI3_SCK/I2S3_CK/
USART3_TX/UART4_TX/
111 B11 78 51 A2 PC10 I/O FT PC10 LCD_SEG28/LCD_SEG40/ -
LCD_COM4/
SDIO_D2
SPI3_MISO/USART3_RX/
UART4_RX/
112 C10 79 52 B3 PC11 I/O FT PC11 LCD_SEG29/LCD_SEG41/ -
LCD_COM5/
SDIO_D3
SPI3_MOSI/I2S3_SD/
USART3_CK/
113 B10 80 53 C4 PC12 I/O FT PC12 UART5_TX/LCD_SEG30/ -
LCD_SEG42/
LCD_COM6/SDIO_CK
TIM9_CH1/SPI2_NSS/
114 C9 81 - - PD0 I/O FT PD0 -
I2S2_WS/ FSMC_D2

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STM32L151xD STM32L152xD Pin descriptions

Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

SPI2_SCK/I2S2_CK
115 B9 82 - - PD1 I/O FT PD1 -
/FSMC_D3
TIM3_ETR/
UART5_RX/LCD_SEG31/
116 C8 83 54 A3 PD2 I/O FT PD2 -
LCD_SEG43/LCD_COM7/
SDIO_CMD
SPI2_MISO/USART2_CTS/
117 B8 84 - - PD3 I/O FT PD3 -
FSMC_CLK
SPI2_MOSI/I2S2_SD/
118 B7 85 - - PD4 I/O FT PD4 USART2_RTS/ -
FSMC_NOE
119 A6 86 - - PD5 I/O FT PD5 USART2_TX/FSMC_NWE -
120 F7 - - - VSS_10 S - VSS_10 - -
121 G7 - - - VDD_10 S - VDD_10 - -
USART2_RX
122 B6 87 - - PD6 I/O FT PD6 -
/FSMC_NWAIT
TIM9_CH2/USART2_CK
123 A5 88 - - PD7 I/O FT PD7 -
/FSMC_NE1
124 D9 - - - PG9 I/O FT PG9 FSMC_NE2 -
125 D8 - - - PG10 I/O FT PG10 FSMC_NE3 -
126 - - - - PG11 I/O FT PG11 - -
127 D7 - - - PG12 I/O FT PG12 FSMC_NE4 -
128 C7 - - - PG13 I/O FT PG13 FSMC_A24 -
129 C6 - - - PG14 I/O FT PG14 FSMC_A25 -
130 - - - - VSS_11 S - VSS_11 - -
131 - - - - VDD_11 S - VDD_11 - -
132 - - - - PG15 I/O FT PG15 - -
TIM2_CH2/SPI1_SCK/
133 A8 89 55 A4 PB3 I/O FT JTDO SPI3_SCK/ I2S3_CK/ COMP2_INM
LCD_SEG7/JTDO
TIM3_CH1/SPI1_MISO/
134 A7 90 56 B4 PB4 I/O FT NJTRST SPI3_MISO/ COMP2_INP
LCD_SEG8/NJTRST

DocID022027 Rev 11 47/154

57
Pin descriptions STM32L151xD STM32L152xD

Table 8. STM32L151xD and STM32L152xD pin definitions (continued)

Pins Pin functions

I / O structure
Pin Type(1)
Main
UFBGA132

WLCSP64
LQFP144

LQFP100

function(2)
LQFP64

Pin name
Additional
(after reset) Alternate functions
functions

TIM3_CH2/I2C1_SMBA/
SPI1_MOSI/
135 C5 91 57 A5 PB5 I/O FT PB5 COMP2_INP
SPI3_MOSI/
I2S3_SD/LCD_SEG9
TIM4_CH1/I2C1_SCL/
136 B5 92 58 B5 PB6 I/O FT PB6 COMP2_INP
USART1_TX/
TIM4_CH2/I2C1_SDA/ COMP2_INP/
137 B4 93 59 C5 PB7 I/O FT PB7
USART1_RX/FSMC_NADV PVD_IN
138 A4 94 60 A6 BOOT0 I B BOOT0 - -
TIM4_CH3/TIM10_CH1/
139 A3 95 61 D5 PB8 I/O FT PB8 I2C1_SCL/ -
LCD_SEG16/SDIO_D4
TIM4_CH4/
140 B3 96 62 B6 PB9 I/O FT PB9 TIM11_CH1/I2C1_SDA/ -
LCD_COM3/ SDIO_D5
TIM4_ETR/TIM10_CH1/
141 C3 97 - - PE0 I/O FT PE0 -
LCD_SEG36/FSMC_NBL0
TIM11_CH1/LCD_SEG37
142 A2 98 - - PE1 I/O FT PE1 -
/FSMC_NBL1
143 D3 99 63 A7 VSS_3 S - VSS_3 - -
144 C4 100 64 A8 VDD_3 S - VDD_3 - -
1. I = input, O = output, S = supply.
2. Function availability depends on the chosen device.
3. Applicable to STM32L152xD devices only. In STM32L151xD devices, this pin should be connected to VDD.
4. The PC14 and PC15 I/Os are only configured as OSC32_IN/OSC32_OUT when the LSE oscillator is ON (by setting the
LSEON bit in the RCC_CSR register). The LSE oscillator pins OSC32_IN/OSC32_OUT can be used as general-purpose
PH0/PH1 I/Os, respectively, when the LSE oscillator is off (after reset, the LSE oscillator is off). The LSE has priority over
the GPIO function. For more details, refer to Using the OSC32_IN/OSC32_OUT pins as GPIO PC14/PC15 port pins
section in the STM32L151xx, STM32L152xx and STM32L162xx reference manual (RM0038).
5. The PH0 and PH1 I/Os are only configured as OSC_IN/OSC_OUT when the HSE oscillator is ON (by setting the HSEON
bit in the RCC_CR register). The HSE oscillator pins OSC_IN/OSC_OUT can be used as general-purpose PH0/PH1 I/Os,
respectively, when the HSE oscillator is off ( after reset, the HSE oscillator is off ). The HSE has priority over the GPIO
function.

48/154 DocID022027 Rev 11

 Alternate functions

STM32L151xD STM32L152xD
Table 9. Alternate function input/output
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
BOOT0 BOOT0 - - - - - - - - - - -
OUT

NRST NRST - - - - - - - - - - - -

EVENT
PA0-WKUP1 - TIM2_CH1_ETR TIM5_CH1 - - - - USART2_CTS - - - TIMx_IC1
OUT
DocID022027 Rev 11

EVENT
PA1 - TIM2_CH2 TIM5_CH2 - - - - USART2_RTS - SEG0 - TIMx_IC2
OUT

EVENT
PA2 - TIM2_CH3 TIM5_CH3 TIM9_CH1 - - - USART2_TX - SEG1 - TIMx_IC3
OUT

EVENT
PA3 - TIM2_CH4 TIM5_CH4 TIM9_CH2 - - - USART2_RX - SEG2 - TIMx_IC4
OUT

SPI3_NSS EVENT
PA4 - - - - - SPI1_NSS USART2_CK - - - TIMx_IC1
I2S3_WS OUT

EVENT
PA5 - TIM2_CH1_ETR - - - SPI1_SCK - - - - - TIMx_IC2
OUT

EVENT
PA6 - - TIM3_CH1 TIM10_ CH1 - SPI1_MISO - - - SEG3 - TIMx_IC3
OUT

EVENT
PA7 - - TIM3_CH2 TIM11_ CH1 - SPI1_MOSI - - - SEG4 - TIMx_IC4
OUT

EVENT
PA8 MCO - - - - - - USART1_CK - COM0 - TIMx_IC1
OUT

EVENT

Pin descriptions
PA9 - - - - - - - USART1_TX - COM1 - TIMx_IC2
OUT

EVENT
PA10 - - - - - - - USART1_RX - COM2 - TIMx_IC3
OUT

EVENT
PA11 - - - - - SPI1_MISO USART1_CTS - - - TIMx_IC4
49/154

OUT
 Table 9. Alternate function input/output (continued)
50/154

Pin descriptions
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
PA12 - - - - - SPI1_MOSI - USART1_RTS - - - TIMx_IC1
OUT

EVENT
PA13 JTMS-SWDIO - - - - - - - - - - TIMx_IC2
OUT

EVEN
PA14 JTCK-SWCLK - - - - - - - - - - TIMx_IC3
TOUT

SPI3_NSS EVEN
PA15 JTDI TIM2_CH1_ETR - - - SPI1_NSS - - SEG17 - TIMx_IC4
I2S3_WS TOUT
DocID022027 Rev 11

EVEN
PB0 - - TIM3_CH3 - - - - - SEG5 - -
TOUT

EVENT
PB1 - - TIM3_CH4 - - - - - - SEG6 - -
OUT

EVENT
PB2 BOOT1 - - - - - - - - - - -
OUT

SPI3_SCK EVENT
PB3 JTDO TIM2_CH2 - - - SPI1_SCK - - SEG7 - -
I2S3_CK OUT

EVENT
PB4 NJTRST - TIM3_CH1 - - SPI1_MISO SPI3_MISO - - SEG8 - -
OUT

I2C1_ SPI3_MOSI EVENT

PB5 - - TIM3_CH2 - SPI1_MOSI - - SEG9 - -
SMBA I2S3_SD OUT

STM32L151xD STM32L152xD
EVENT
PB6 - - TIM4_CH1 - I2C1_SCL - - USART1_TX - - - -
OUT

EVENT
PB7 - - TIM4_CH2 - I2C1_SDA - - USART1_RX - - NADV -
OUT

EVENT
PB8 - - TIM4_CH3 TIM10_CH1 I2C1_SCL - - - - SEG16 SDIO_D4 -
OUT

EVENT
PB9 - - TIM4_CH4 TIM11_CH1 I2C1_SDA - - - - COM3 SDIO_D5 -
OUT

EVENT
PB10 - TIM2_CH3 - - I2C2_SCL - - USART3_TX - SEG10 - -
OUT
 Table 9. Alternate function input/output (continued)

STM32L151xD STM32L152xD
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
PB11 - TIM2_CH4 - - I2C2_SDA - - USART3_RX - SEG11 - -
OUT

SPI2_NSS EVENT
PB12 - - - TIM10_CH1 I2C2_SMBA - USART3_CK - SEG12 - -
I2S2_WS OUT

SPI2_SCK EVENT
PB13 - - - TIM9_CH1 - - USART3_CTS - SEG13 - -
I2S2_CK OUT

EVENT
PB14 - - - TIM9_CH2 - SPI2_MISO - USART3_RTS - SEG14 - -
OUT
DocID022027 Rev 11

SPI2_MOSI EVENT
PB15 - - - TIM11_CH1 - - - - SEG15 - -
I2S2_SD OUT

EVENT
PC0 - - - - - - - - SEG18 - TIMx_IC1
OUT

EVENT
PC1 - - - - - - - - - SEG19 - TIMx_IC2
OUT

EVENT
PC2 - - - - - - - - - SEG20 - TIMx_IC3
OUT

EVENT
PC3 - - - - - - - - - SEG21 - TIMx_IC4
OUT

EVENT
PC4 - - - - - - - - - SEG22 - TIMx_IC1
OUT

EVENT
PC5 - - - - - - - - - SEG23 - TIMx_IC2
OUT

EVENT
PC6 - - TIM3_CH1 - - I2S2_MCK - - - SEG24 SDIO_D6 TIMx_IC3
OUT

EVENT
PC7 - - TIM3_CH2 - - - I2S3_MCK - - SEG25 TIMx_IC4

Pin descriptions
SDIO_D7
OUT

EVENT
PC8 - - TIM3_CH3 - - - - - - SEG26 SDIO_D0 TIMx_IC1
OUT

EVENT
PC9 - - TIM3_CH4 - - - - - - SEG27 SDIO_D1 TIMx_IC2
OUT
51/154
 Table 9. Alternate function input/output (continued)
52/154

Pin descriptions
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
COM4/
SPI3_SCK EVENT
PC10 - - - - - - USART3_TX UART4_TX SEG28/ SDIO_D2 TIMx_IC3
I2S3_CK OUT
SEG40

COM5/
EVENT
PC11 - - - - - - SPI3_MISO USART3_RX UART4_RX SEG29 SDIO_D3 TIMx_IC4
OUT
/SEG41

COM6/
SPI3_MOSI EVENT
PC12 - - - - - - USART3_CK UART5_TX SEG30/ SDIO_CK TIMx_IC1
I2S3_SD OUT
SEG42
DocID022027 Rev 11

EVENT
PC13-WKUP2 - - - - - - - - - - - TIMx_IC2
OUT

EVENT
PC14 OSC32_IN - - - - - - - - - - - TIMx_IC3
OUT

EVENT
PC15 OSC32_OUT - - - - - - - - - - - TIMx_IC4
OUT

SPI2_NSS EVENT
PD0 - - - TIM9_CH1 - - - - - D2 /DA2 TIMx_IC1
I2S2_WS OUT

SPI2 SCK EVENT

PD1 - - - - - - - - - D3 /DA3 TIMx_IC2
I2S2_CK OUT

COM7/
SDIO_ EVENT
PD2 - - TIM3_ETR - - - - - UART5_RX SEG31/ TIMx_IC3

STM32L151xD STM32L152xD
CMD OUT
SEG43

EVENT
PD3 - - - - - SPI2_MISO - USART2_CTS - - CLK TIMx_IC4
OUT

SPI2_MOSI EVENT
PD4 - - - - - - USART2_RTS - - NOE TIMx_IC1
I2S2_SD OUT

EVENT
PD5 - - - - - - - USART2_TX - - NWE TIMx_IC2
OUT

EVENT
PD6 - - - - - - - USART2_RX - - NWAIT TIMx_IC3
OUT

EVENT
PD7 - - - TIM9_CH2 - - - USART2_CK - - NE1 TIMx_IC4
OUT
 Table 9. Alternate function input/output (continued)

STM32L151xD STM32L152xD
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
PD8 - - - - - - - USART3_TX - SEG28 D13/DA13 TIMx_IC1
OUT

EVENT
PD9 - - - - - - - USART3_RX - SEG29 D14/DA14 TIMx_IC2
OUT

EVENT
PD10 - - - - - - - USART3_CK - SEG30 D15/DA15 TIMx_IC3
OUT

EVENT
PD11 - - - - - - - USART3_CTS - SEG31 A16 TIMx_IC4
OUT
DocID022027 Rev 11

EVENT
PD12 - - TIM4_CH1 - - - - USART3_RTS - SEG32 A17 TIMx_IC1
OUT

EVENT
PD13 - - TIM4_CH2 - - - - - - SEG33 A18 TIMx_IC2
OUT

EVENT
PD14 - - TIM4_CH3 - - - - - - SEG34 D0/DA0 TIMx_IC3
OUT

EVENT
PD15 - - TIM4_CH4 - - - - - - SEG35 D1/DA1 TIMx_IC4
OUT

EVENT
PE0 - - TIM4_ETR TIM10_CH1 - - - - - SEG36 NBL0 TIMx_IC1
OUT

EVENT
PE1 - - - TIM11_CH1 - - - - - SEG37 NBL1 TIMx_IC2
OUT

EVENT
PE2 TRACECK - TIM3_ETR - - - - - - SEG 38 A23 TIMx_IC3
OUT

EVENT
PE3 TRACED0 - TIM3_CH1 - - - - - - SEG 39 A19 TIMx_IC4
OUT

EVENT
PE4 TRACED1 - TIM3_CH2 - - - - - - - TIMx_IC1

Pin descriptions
A20
OUT

EVENT
PE5 TRACED2 - - TIM9_CH1 - - - - - - A21 TIMx_IC2
OUT

EVENT
PE6-WKUP3 TRACED3 - - TIM9_CH2 - - - - - - - TIMx_IC3
OUT
53/154
 Table 9. Alternate function input/output (continued)
54/154

Pin descriptions
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
PE7 - - - - - - - - - - D4/DA4 TIMx_IC4
OUT

EVENT
PE8 - - - - - - - - - - D5/DA5 TIMx_IC1
OUT

EVENT
PE9 - TIM2_CH1_ETR - - - - - - - - D6/DA6 TIMx_IC2
OUT

EVENT
PE10 - TIM2_CH2 - - - - - - - - D7/DA7 TIMx_IC3
OUT
DocID022027 Rev 11

EVENT
PE11 - TIM2_CH3 - - - - - - - - D8/DA8 TIMx_IC4
OUT

EVENT
PE12 - TIM2_CH4 - - - SPI1_NSS - - - - D9/DA9 TIMx_IC1
OUT

EVENT
PE13 - - - - - SPI1_SCK - - - - D10/DA10 TIMx_IC2
OUT

EVENT
PE14 - - - - - SPI1_MISO - - - - D11/DA11 TIMx_IC3
OUT

EVENT
PE15 - - - - - SPI1_MOSI - - - - D12/DA12 TIMx_IC4
OUT

EVENT
PF0 - - - - - - - - - - A0 -
OUT

STM32L151xD STM32L152xD
EVENT
PF1 - - - - - - - - - - A1 -
OUT

EVENT
PF2 - - - - - - - - - - A2 -
OUT

EVENT
PF3 - - - - - - - - - - A3 -
OUT

EVENT
PF4 - - - - - - - - - - A4 -
OUT

EVENT
PF5 - - - - - - - - - - A5 -
OUT
 Table 9. Alternate function input/output (continued)

STM32L151xD STM32L152xD
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
PF6 - - TIM5_ETR - - - - - - - - -
OUT

EVENT
PF7 - - TIM5_CH2 - - - - - - - - -
OUT

EVENT
PF8 - - TIM5_CH3 - - - - - - - - -
OUT

EVENT
PF9 - - TIM5_CH4 - - - - - - - - -
OUT
DocID022027 Rev 11

EVENT
PF10 - - - - - - - - - - - -
OUT

EVENT
PF11 - - - - - - - - - - - -
OUT

EVENT
PF12 - - - - - - - - - - A6 -
OUT

EVENT
PF13 - - - - - - - - - - A7 -
OUT

EVENT
PF14 - - - - - - - - - - A8 -
OUT

EVENT
PF15 - - - - - - - - - - A9 -
OUT

EVENT
PG0 - - - - - - - - - - A10 -
OUT

EVENT
PG1 - - - - - - - - - - A11 -
OUT

EVENT
PG2 - - - - - - - - - - -

Pin descriptions
A12
OUT

EVENT
PG3 - - - - - - - - - - A13 -
OUT

EVENT
PG4 - - - - - - - - - - A14 -
OUT
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 Table 9. Alternate function input/output (continued)
56/154

Pin descriptions
Digital alternate function number

AFIO0 AFIO1 AFIO2 AFIO3 AFIO4 AFIO5 AFIO6 AFIO7 AFIO8 .. AFIO11 AFIO12 .. AFIO14 AFIO15
Port name
Alternate function

TIM9/ FSMC/
SYSTEM TIM2 TIM3/4/5 I2C1/2 SPI1/2 SPI3 USART1/2/3 UART4/5 LCD CPRI SYSTEM
10/11 SDIO
EVENT
PG5 - - - - - - - - - - A15 -
OUT

EVENT
PG6 - - - - - - - - - - - -
OUT

EVENT
PG7 - - - - - - - - - - - -
OUT

EVENT
PG8 - - - - - - - - - - - -
OUT
DocID022027 Rev 11

EVENT
PG9 - - - - - - - - - - NE2 -
OUT

EVENT
PG10 - - - - - - - - - - NE3 -
OUT

EVENT
PG11 - - - - - - - - - - - -
OUT

EVENT
PG12 - - - - - - - - - - NE4 -
OUT

EVENT
PG13 - - - - - - - - - - A24 -
OUT

EVENT
PG14 - - - - - - - - - - A25 -
OUT

STM32L151xD STM32L152xD
EVENT
PG15 - - - - - - - - - - - -
OUT

PH0OSC_IN - - - - - - - - - - - - -

PH1OSC_OUT - - - - - - - - - - - - -

PH2 - - - - - - - - - - A22 - -
STM32L151xD STM32L152xD Memory mapping

5 Memory mapping

Figure 8. Memory map

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57
Electrical characteristics STM32L151xD STM32L152xD

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes. Based on characterization, the minimum and maximum
values refer to sample tests and represent the mean value plus or minus three times the
standard deviation (mean 3).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 C, VDD = 3.6 V (for the
1.65 V VDD 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean 2).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 9.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 10.

Figure 9. Pin loading conditions Figure 10. Pin input voltage

0&8SLQ 0&8SLQ
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9,1

DLF DLG

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6.1.6 Power supply scheme

Figure 11. Power supply scheme

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Electrical characteristics STM32L151xD STM32L152xD

6.1.7 Optional LCD power supply scheme

Figure 12. Optional LCD power supply scheme

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1. Option 1: LCD power supply is provided by a dedicated VLCD supply source, VSEL switch is open.
2. Option 2: LCD power supply is provided by the internal step-up converter, VSEL switch is closed, an
external capacitance is needed for correct behavior of this converter.

6.1.8 Current consumption measurement

Figure 13. Current consumption measurement scheme

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6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 10: Voltage characteristics,
Table 11: Current characteristics, and Table 12: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

Table 10. Voltage characteristics

Symbol Ratings Min Max Unit

External main supply voltage

VDDVSS 0.3 4.0
(including VDDA and VDD)(1)
V
Input voltage on five-volt tolerant pin VSS 0.3 VDD+4.0
VIN(2)
Input voltage on any other pin VSS 0.3 4.0
|VDDx| Variations between different VDD power pins - 50
mV
|VSSX VSS| Variations between all different ground pins(3) - 50
VREF+ VDDA Allowed voltage difference for VREF+ > VDDA - 0.4 V
Electrostatic discharge voltage
VESD(HBM) see Section 6.3.12
(human body model)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. VIN maximum must always be respected. Refer to Table 11 for maximum allowed injected current values.
3. Include VREF- pin.

Table 11. Current characteristics

Symbol Ratings Max. Unit

IVDD() Total current into sum of all VDD_x power lines (source)(1) 100
(2)
IVSS() Total current out of sum of all VSS_x ground lines (sink)(1) 100
IVDD(PIN) Maximum current into each VDD_x power pin (source)(1) 70
IVSS(PIN) Maximum current out of each VSS_x ground pin (sink)(1) -70
Output current sunk by any I/O and control pin 25
IIO
Output current sourced by any I/O and control pin - 25 mA
Total output current sunk by sum of all IOs and control pins(2) 60
IIO(PIN)
(2)
Total output current sourced by sum of all IOs and control pins -60
Injected current on five-volt tolerant I/O(4), RST and B pins -5/+0
IINJ(PIN) (3)
Injected current on any other pin (5)
5
IINJ(PIN) Total injected current (sum of all I/O and control pins)(6) 25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Negative injection disturbs the analog performance of the device. See note in Section 6.3.19.

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Electrical characteristics STM32L151xD STM32L152xD

4. Positive current injection is not possible on these I/Os. A negative injection is induced by VIN<VSS. IINJ(PIN) must never be
exceeded. Refer to Table 10 for maximum allowed input voltage values.
5. A positive injection is induced by VIN > VDD while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be
exceeded. Refer to Table 10: Voltage characteristics for the maximum allowed input voltage values.
6. When several inputs are submitted to a current injection, the maximum IINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 12. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range 65 to +150 C

TJ Maximum junction temperature 150 C

6.3 Operating conditions

6.3.1 General operating conditions

Table 13. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 32

fPCLK1 Internal APB1 clock frequency - 0 32 MHz
fPCLK2 Internal APB2 clock frequency - 0 32
BOR detector disabled 1.65 3.6
BOR detector enabled, at
1.8 3.6
VDD Standard operating voltage power on V
BOR detector disabled, after
1.65 3.6
power on
Analog operating voltage
1.65 3.6
(ADC and DAC not used) Must be the same voltage as
(1)
VDDA V
Analog operating voltage VDD(2)
1.8 3.6
(ADC or DAC used)
FT pins; 2.0 V VDD -0.3 5.5(3)
FT pins; VDD < 2.0 V -0.3 5.25(3)
VIN I/O input voltage V
BOOT0 pin 0 5.5
Any other pin -0.3 VDD+0.3
LQFP144 package - 500
LQFP100 package - 465
Power dissipation at TA = 85 C for
PD LQFP64 package - 435 mW
suffix 6 or TA = 105 C for suffix 7(4)
UFBGA132 - 333
WLCSP64 package - 435
Ambient temperature for 6 suffix version Maximum power dissipation(5) 40 85
TA C
Ambient temperature for 7 suffix version Maximum power dissipation 40 105

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Table 13. General operating conditions (continued)

Symbol Parameter Conditions Min Max Unit

6 suffix version 40 105

TJ Junction temperature range C
7 suffix version 40 110
1. When the ADC is used, refer to Table 64: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up .
3. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled.
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 80: Thermal characteristics
on page 145).
5. In low-power dissipation state, TA can be extended to -40C to 105C temperature range as long as TJ does not exceed TJ
max (see Table 80: Thermal characteristics on page 145).

6.3.2 Embedded reset and power control block characteristics

The parameters given in the following table are derived from the tests performed under the
conditions summarized in Table 13.

Table 14. Embedded reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

BOR detector enabled 0 -

VDD rise time rate
BOR detector disabled 0 - 1000
tVDD(1) s/V
BOR detector enabled 20 -
VDD fall time rate
BOR detector disabled 0 - 1000
VDD rising, BOR enabled - 2 3.3
TRSTTEMPO(1) Reset temporization ms
VDD rising, BOR disabled(2) 0.4 0.7 1.6

Power on/power down reset Falling edge 1 1.5 1.65

VPOR/PDR
threshold Rising edge 1.3 1.5 1.65
Falling edge 1.67 1.7 1.74
VBOR0 Brown-out reset threshold 0
Rising edge 1.69 1.76 1.8
V
Falling edge 1.87 1.93 1.97
VBOR1 Brown-out reset threshold 1
Rising edge 1.96 2.03 2.07
Falling edge 2.22 2.30 2.35
VBOR2 Brown-out reset threshold 2
Rising edge 2.31 2.41 2.44

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Table 14. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit

Falling edge 2.45 2.55 2.6

VBOR3 Brown-out reset threshold 3
Rising edge 2.54 2.66 2.7
Falling edge 2.68 2.8 2.85
VBOR4 Brown-out reset threshold 4
Rising edge 2.78 2.9 2.95

Programmable voltage detector Falling edge 1.8 1.85 1.88

VPVD0
threshold 0 Rising edge 1.88 1.94 1.99
Falling edge 1.98 2.04 2.09
VPVD1 PVD threshold 1
Rising edge 2.08 2.14 2.18
Falling edge 2.20 2.24 2.28
VPVD2 PVD threshold 2 V
Rising edge 2.28 2.34 2.38
Falling edge 2.39 2.44 2.48
VPVD3 PVD threshold 3
Rising edge 2.47 2.54 2.58
Falling edge 2.57 2.64 2.69
VPVD4 PVD threshold 4
Rising edge 2.68 2.74 2.79
Falling edge 2.77 2.83 2.88
VPVD5 PVD threshold 5
Rising edge 2.87 2.94 2.99
Falling edge 2.97 3.05 3.09
VPVD6 PVD threshold 6
Rising edge 3.08 3.15 3.20
BOR0 threshold - 40 -
Vhyst Hysteresis voltage All BOR and PVD mV
- 100 -
thresholds excepting BOR0
1. Guaranteed by characterization results.
2. Valid for device version without BOR at power up. Please see option D in Ordering information scheme for more details.

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6.3.3 Embedded internal reference voltage

The parameters given in Table 16 are based on characterization results, unless otherwise
specified.

Table 15. Embedded internal reference voltage calibration values

Calibration value name Description Memory address

Raw data acquired at

VREFINT_CAL temperature of 30 C 5 C 0x1FF8 00F8 - 0x1FF8 00F9
VDDA= 3 V 10 mV

Table 16. Embedded internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT out (1)

Internal reference voltage 40 C < TJ < +110 C 1.202 1.224 1.242 V
Internal reference current
IREFINT - - 1.4 2.3 A
consumption
TVREFINT Internal reference startup time - - 2 3 ms
VDDA and VREF+ voltage during
VVREF_MEAS - 2.99 3 3.01 V
VREFINT factory measure
Including uncertainties
Accuracy of factory-measured VREF
AVREF_MEAS (2) due to ADC and - - 5 mV
value
VDDA/VREF+ values
ppm/
TCoeff(3) Temperature coefficient 40 C < TJ < +110 C - 25 100
C
ACoeff(3) Long-term stability 1000 hours, T= 25 C - - 1000 ppm
VDDCoeff(3) Voltage coefficient 3.0 V < VDDA < 3.6 V - - 2000 ppm/V
ADC sampling time when reading
TS_vrefint(3) - 4 - - s
the internal reference voltage
Startup time of reference voltage
TADC_BUF(3) (4) - - - 10 s
buffer for ADC
Consumption of reference voltage
IBUF_ADC(3) - - 13.5 25 A
buffer for ADC
IVREF_OUT(3) VREF_OUT output current (5) - - - 1 A
CVREF_OUT(3) VREF_OUT output load - - - 50 pF
Consumption of reference voltage
ILPBUF(3) - - 730 1200 nA
buffer for VREF_OUT and COMP
VREFINT_DIV1(3) 1/4 reference voltage - 24 25 26
%
VREFINT_DIV2(3) 1/2 reference voltage - 49 50 51 VREFIN
T
VREFINT_DIV3(3) 3/4 reference voltage - 74 75 76
1. Guaranteed by test in production.
2. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.
3. Guaranteed by characterization results.
4. Shortest sampling time can be determined in the application by multiple iterations.

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5. To guarantee less than 1% VREF_OUT deviation.

6.3.4 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, temperature, I/O pin loading, device software configuration, operating
frequencies, I/O pin switching rate, program location in memory and executed binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to the Dhrystone 2.1 code, unless
otherwise specified. The current consumption values are derived from tests performed
under ambient temperature TA = 25 C and VDD supply voltage conditions summarized in
Table 13: General operating conditions, unless otherwise specified.
The MCU is placed under the following conditions:
All I/O pins are configured in analog input mode
All peripherals are disabled except when explicitly mentioned.
The Flash memory access time, 64-bit access and prefetch is adjusted depending on
fHCLK frequency and voltage range to provide the best CPU performance.
When the peripherals are enabled fAPB1 = fAPB2 = fAHB.
When PLL is ON, the PLL inputs are equal to HSI = 16 MHz (if internal clock is used) or
HSE = 16 MHz (if HSE bypass mode is used).
The HSE user clock applied to OSCI_IN input follows the characteristic specified in
Table 26: High-speed external user clock characteristics.
For maximum current consumption VDD = VDDA = 3.6 V is applied to all supply pins.
For typical current consumption VDD = VDDA = 3.0 V is applied to all supply pins if not
specified otherwise.

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Table 17. Current consumption in Run mode, code with data processing running from Flash
fHCLK Max
Symbol Parameter Conditions Typ (1) Unit
[MHz]

1 290 500
Range3,
VCORE=1.2 V 2 505 750 A
VOS[1:0]=11
4 955 1200
4 1.15 1.6
fHSE = fHCLK up to 16MHz, Range2,
included fHSE = fHCLK/2 above VCORE=1.5 V 8 2.3 2.9
16 MHz (PLL ON)(2) VOS[1:0]=10
16 4.25 5.2
8 2.65 3.5
Range1,
IDD (Run Supply current in VCORE=1.8 V 16 5.35 6.5
Run mode code VOS[1:0]=01 mA
from 32 10.5 12
Flash) executed from Flash
Range2,
VCORE=1.5 V 16 4.35 5.2
VOS[1:0]=10
HSI clock source (16 MHz)
Range1,
VCORE=1.8 V 32 10.5 12.3
VOS[1:0]=01
MSI clock, 65 kHZ 0.065 46 130
Range3,
MSI clock, 524 kHZ VCORE=1.2 V 0.524 160 250 A
VOS[1:0]=11
MSI clock, 4.2 MHZ 4.2 965 1200
1. Guaranteed by characterization results, unless otherwise specified.
2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

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Table 18. Current consumption in Run mode, code with data processing running from RAM
Symbol Parameter Conditions fHCLK Typ Max Unit

1 230 470
Range3,
VCORE=1.2 V 2 415 780 A
VOS[1:0]=11
4 800 1200
4 0.935 1.5
fHSE = fHCLK up to 16 MHz, Range2,
included fHSE = fHCLK/2 above VCORE=1.5 V 8 1.9 3
16MHz (PLL ON)(1) VOS[1:0]=10
16 3.75 5
8 2.25 3.5
Range1,
Supply current in VCORE=1.8 V 16 4.45 5.55
IDD (Run Run mode code VOS[1:0]=01
32 9.05 10.9 mA
from RAM) executed from
RAM Range2,
VCORE=1.5 V 16 3.75 4.8
VOS[1:0]=10
HSI clock source (16 MHz)
Range1,
VCORE=1.8 V 32 8.95 11.7
VOS[1:0]=01
MSI clock, 65 kHZ 0.065 43.5 100
Range3,
MSI clock, 524 kHZ VCORE=1.2 V 0.524 135 215 A
VOS[1:0]=11
MSI clock, 4.2 MHZ 4.2 835 1100
1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register).

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Table 19. Current consumption in Sleep mode

Max
Symbol Parameter Conditions fHCLK Typ (1) Unit

1 58 220
Range3,
Vcore=1.2 V 2 96 300
VOS[1:0]=11
4 170 380
4 210 500
fHSE = fHCLK up to 16 MHz, Range2,
included fHSE = fHCLK/2 Vcore=1.5 V 8 400 700
above 16 MHz (PLL ON)(2) VOS[1:0]=10
16 810 1100
8 485 800
Supply current in Range1,
Sleep mode, code Vcore=1.8 V 16 955 1250
executed from VOS[1:0]=01
32 2100 2700
RAM, Flash
switched OFF Range2,
Vcore=1.5 V 16 835 1100
VOS[1:0]=10
HSI clock source (16 MHz)
Range1,
Vcore=1.8 V 32 2100 2700
VOS[1:0]=01
MSI clock, 65 kHZ 0.065 18.5 72
Range3,
MSI clock, 524 kHZ Vcore=1.2 V 0.524 37 92
VOS[1:0]=11
MSI clock, 4.2 MHZ 4.2 180 273
IDD(SLEEP) A
1 75 250
Range3,
Vcore=1.2 V 2 115 300
VOS[1:0]=11
4 200 380
4 230 500
fHSE = fHCLK up to 16 MHz, Range2,
included fHSE = fHCLK/2 Vcore=1.5 V 8 430 700
above 16MHz (PLL ON)(2) VOS[1:0]=10
16 840 1120
8 500 800
Range1,
Supply current in Vcore=1.8 V 16 980 1300
Sleep mode, Flash VOS[1:0]=01
32 2100 2700
switched ON
Range2,
Vcore=1.5 V 16 860 1160
VOS[1:0]=10
HSI clock source (16 MHz)
Range1,
Vcore=1.8 V 32 2150 2800
VOS[1:0]=01
MSI clock, 65 kHZ 0.065 33,5 90
Range3,
MSI clock, 524 kHZ Vcore=1.2 V 0.524 53 110
VOS[1:0]=11
MSI clock, 4.2 MHZ 4.2 200 290
1. Guaranteed by characterization results, unless otherwise specified.

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2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register)

Table 20. Current consumption in Low-power run mode

Symbol Parameter Conditions Typ Max(1) Unit

TA = -40 C to 25 C 11 14
MSI clock, 65 kHz
TA = 85 C 26 32
All fHCLK = 32 kHz
peripherals TA = 105 C 53 72
OFF, code TA =-40 C to 25 C 18 21
executed MSI clock, 65 kHz
from RAM, TA = 85 C 33 40
fHCLK = 65 kHz
Flash TA = 105 C 60 78
switched
OFF, VDD TA = -40 C to 25 C 36 41
from 1.65 V TA = 55 C 39 44
to 3.6 V MSI clock, 131 kHz
fHCLK = 131 kHz TA = 85 C 50 58
Supply
IDD (LP current in TA = 105 C 78 95
Run) Low-power TA = -40 C to 25 C 36 40.5
run mode MSI clock, 65 kHz
TA = 85 C 53 60 A
fHCLK = 32 kHz
All TA = 105 C 81 100
peripherals TA = -40 C to 25 C 44 49
OFF, code MSI clock, 65 kHz
executed TA = 85 C 61 67
fHCLK = 65 kHz
from Flash, TA = 105 C 89 107
VDD from
1.65 V to TA = -40 C to 25 C 64 71
3.6 V TA = 55 C 68 73
MSI clock, 131 kHz
fHCLK = 131 kHz TA = 85 C 80 88
TA = 105 C 101 110
Max allowed
VDD from
IDD max current in
1.65 V to - - - 200
(LP Run) Low-power
3.6 V
run mode
1. Guaranteed by characterization results, unless otherwise specified.

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Table 21. Current consumption in Low-power sleep mode

Symbol Parameter Conditions Typ Max(1) Unit

MSI clock, 65 kHz

fHCLK = 32 kHz TA = -40 C to 25 C 4.4 -
Flash OFF
TA = -40 C to 25 C 18 21
MSI clock, 65 kHz
fHCLK = 32 kHz TA = 85 C 24 27
Flash ON
TA = 105 C 35 43
All peripherals
TA = -40 C to 25 C 18.6 21
OFF, VDD from MSI clock, 65 kHz
1.65 V to 3.6 V fHCLK = 65 kHz, TA = 85 C 24.5 28
Flash ON
TA = 105 C 35 42
TA = -40 C to 25 C 22 25
MSI clock, 131 kHz T = 55 C 23.5 26
A
Supply fHCLK = 131 kHz,
IDD current in Flash ON TA = 85 C 28.5 31
(LP Sleep) Low-power
TA = 105 C 39 45
sleep mode
TA = -40 C to 25 C 18 20.5 A
MSI clock, 65 kHz
TA = 85 C 24 27
fHCLK = 32 kHz
TA = 105 C 35 43

TIM9 and TA = -40 C to 25 C 18.6 21

USART1 MSI clock, 65 kHz
TA = 85 C 24.5 28
enabled, Flash fHCLK = 65 kHz
ON, VDD from TA = 105 C 35 42
1.65 V to 3.6 V TA = -40 C to 25 C 22 25

MSI clock, 131 kHz TA = 55 C 23.5 26

fHCLK = 131 kHz TA = 85 C 28.5 31
TA = 105 C 39 45
Max
allowed
IDD max VDD from 1.65 V
current in - - - 200
(LP Sleep) to 3.6 V
Low-power
sleep mode
1. Guaranteed by characterization results, unless otherwise specified.

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Table 22. Typical and maximum current consumptions in Stop mode

Symbol Parameter Conditions Typ Max(1) Unit

TA = -40C to 25C
1.1 -
VDD = 1.8 V
TA = -40C to 25C 1.35 4
LCD
OFF TA = 55C 1.95 6
TA= 85C 4.35 10
RTC clocked by LSI TA = 105C 11.0 23
or LSE external clock
(32.768kHz), TA = -40C to 25C 1.65 6
regulator in LP mode, LCD
ON TA = 55C 2.1 7
HSI and HSE OFF
(no independent (static T = 85C 4.7 12
A
watchdog) duty)(2)
TA = 105C 11.0 27
TA = -40C to 25C 2.5 10
LCD TA = 55C 4.65 11
ON (1/8
duty)(3) TA= 85C 7.25 16
TA = 105C 14.0 44
TA = -40C to 25C 1.7 -
Supply current in
IDD (Stop TA = 55C 2.15 -
Stop mode with RTC LCD A
with RTC)
enabled OFF TA= 85C 4.7 -
TA = 105C 11.5 -
TA = -40C to 25C 1.8 -
LCD
ON TA = 55C 2.35 -
RTC clocked by LSE (static T = 85C 4.85 -
A
external quartz duty)(2)
TA = 105C 11.5 -
(32.768kHz),
regulator in LP mode, TA = -40C to 25C 2.45 -
HSI and HSE OFF LCD
(no independent TA = 55C 4.9 -
ON (1/8
watchdog(4) duty)(3) TA= 85C 7.7 -
TA = 105C 14.5 -
TA = -40C to 25C
1.35 -
VDD = 1.8V
LCD TA = -40C to 25C
1.7 -
OFF VDD = 3.0V
TA = -40C to 25C
2.0 -
VDD = 3.6V

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Table 22. Typical and maximum current consumptions in Stop mode (continued)
Symbol Parameter Conditions Typ Max(1) Unit

Regulator in LP mode, HSI and

HSE OFF, independent TA = -40C to 25C 1.6 2.2
watchdog and LSI enabled
Supply current in
TA = -40C to 25C 0.475 1
IDD (Stop) Stop mode (RTC A
disabled) Regulator in LP mode, LSI, HSI T = 55C 0.915 3
A
and HSE OFF (no independent
watchdog) TA= 85C 3.35 9
TA = 105C 10.0 22(5)
MSI = 4.2 MHz 2 -
IDD Supply current during
(WU from wakeup from Stop MSI = 1.05 MHz TA = -40C to 25C 1.45 - mA
Stop) mode
MSI = 65 kHz(6) 1.45 -
1. Guaranteed by characterization results, unless otherwise specified.
2. LCD enabled with external VLCD, static duty, division ratio = 256, all pixels active, no LCD connected.
3. LCD enabled with external VLCD, 1/8 duty, 1/3 bias, division ratio = 64, all pixels active, no LCD connected.
4. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF
loading capacitors.
5. Guaranteed by test in production.
6. When MSI = 64 kHz, the RMS current is measured over the first 15 s following the wakeup event. For the remaining part
of the wakeup period, the current corresponds the Run mode current.

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Table 23. Typical and maximum current consumptions in Standby mode

Symbol Parameter Conditions Typ Max(1) Unit

TA = -40 C to 25 C
0.82 -
VDD = 1.8 V
T = -40 C to 25 C 1.15 1.9
RTC clocked by LSI (no A
independent watchdog) TA = 55 C 1.15 2.2
TA= 85 C 1.65 4
IDD Supply current in TA = 105 C 2.75 8.3(2)
(Standby Standby mode with RTC
with RTC) enabled TA = -40 C to 25 C
1.05 -
VDD = 1.8 V
RTC clocked by LSE
TA = -40 C to 25 C 1.35 -
external quartz (no
A
independent TA = 55 C 1.55 -
watchdog)(3)
TA= 85 C 2.1 -
TA = 105 C 3.3 -
Independent watchdog
TA = -40 C to 25 C 1 1.7
and LSI enabled
Supply current in TA = -40 C to 25 C 0.305 0.6
IDD
Standby mode (RTC
(Standby) Independent watchdog TA = 55 C 0.365 0.9
disabled)
and LSI OFF TA = 85 C 0.66 2.75
TA = 105 C 2 7(2)
IDD Supply current during
(WU from wakeup time from - TA = -40 C to 25 C 1 - mA
Standby) Standby mode
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8pF
loading capacitors.

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in the following table. The MCU
is placed under the following conditions:
all I/O pins are in input mode with a static value at VDD or VSS (no load)
all peripherals are disabled unless otherwise mentioned
the given value is calculated by measuring the current consumption
with all peripherals clocked off
with only one peripheral clocked on

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Table 24. Peripheral current consumption(1)

Typical consumption, VDD = 3.0 V, TA = 25 C

Range 1, Range 2, Range 3,

Peripheral VCORE= VCORE= VCORE= Low-power Unit
1.8 V 1.5 V 1.2 V sleep and
VOS[1:0] = VOS[1:0] = VOS[1:0] = run
01 10 11

TIM2 14.3 12.1 9.5 12.1

TIM3 13.8 11.7 9.2 11.7
TIM4 13.2 11.1 8.7 11.1
TIM5 17.7 14.9 11.8 14.9
TIM6 4.8 4.0 3.0 4.0
TIM7 4.7 3.9 3.0 3.9
LCD 5.0 4.1 3.3 4.1
WWDG 3.5 2.9 2.3 2.9
SPI2 8.9 7.4 5.8 7.4
SPI3 7.3 6.0 4.8 6.0 A/MHz
APB1
USART2 9.4 7.7 6.1 7.7 (fHCLK)

USART3 9.4 7.6 6.0 7.6

UART4 10.1 8.4 6.7 8.4
UART5 9.5 7.9 6.3 7.9
I2C1 8.9 7.4 5.8 7.4
I2C2 7.9 6.4 5.1 6.4
USB 21.2 18.0 14.3 18.0
PWR 4.0 3.2 2.5 3.2
DAC 6.3 5.5 4.4 5.5
COMP 4.9 3.9 3.2 3.9

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Table 24. Peripheral current consumption(1) (continued)

Typical consumption, VDD = 3.0 V, TA = 25 C

Range 1, Range 2, Range 3,

Peripheral VCORE= VCORE= VCORE= Low-power Unit
1.8 V 1.5 V 1.2 V sleep and
VOS[1:0] = VOS[1:0] = VOS[1:0] = run
01 10 11

SYSCFG &
3.5 2.9 2.4 2.9
RI
TIM9 9.0 7.4 5.8 7.4
TIM10 7.1 5.8 4.6 5.8

APB2 TIM11 6.5 5.3 4.3 5.3

(2)
ADC 11.0 9.1 7.2 9.1
SDIO 28.4 24.2 19.1 24.2
SPI1 5.1 4.2 3.3 4.2
USART1 9.4 7.8 6.1 7.8
GPIOA 7.3 6.1 4.8 6.1
GPIOB 7.5 6.1 4.8 6.1
GPIOC 8.2 6.8 5.3 6.8 A/MHz
(fHCLK)
GPIOD 8.7 7.1 5.7 7.1
GPIOE 7.6 6.2 4.9 6.2
GPIOF 7.7 6.3 5.0 6.3
AHB GPIOG 8.4 7.0 5.4 7.0
GPIOH 1.8 1.3 1.1 1.3
CRC 0.8 0.6 0.4 0.6
FLASH 26.3 19.3 18.3 -(3)
DMA1 19.0 16.0 12.8 16.0
DMA2 17.0 14.5 11.5 14.5
FSMC 16.0 13.4 10.6 13.4
All enabled 310 246 217 226.7

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Table 24. Peripheral current consumption(1) (continued)

Typical consumption, VDD = 3.0 V, TA = 25 C

Range 1, Range 2, Range 3,

Peripheral VCORE= VCORE= VCORE= Low-power Unit
1.8 V 1.5 V 1.2 V sleep and
VOS[1:0] = VOS[1:0] = VOS[1:0] = run
01 10 11

IDD (RTC) 0.4

IDD (LCD) 3.1
IDD (ADC)(4) 1450
IDD (DAC)(5) 340
IDD (COMP1) 0.16 A
Slow mode 2
IDD (COMP2)
Fast mode 5
(6)
IDD (PVD / BOR) 2.6
IDD (IWDG) 0.25
1. Data based on differential IDD measurement between all peripherals OFF an one peripheral with clock
enabled, in the following conditions: fHCLK = 32 MHz (range 1), fHCLK = 16 MHz (range 2), fHCLK = 4 MHz
(range 3), fHCLK = 64kHz (Low-power run/sleep), fAPB1 = fHCLK, fAPB2 = fHCLK, default prescaler value for
each peripheral. The CPU is in Sleep mode in both cases. No I/O pins toggling.
2. HSI oscillator is OFF for this measure.
3. In Low-power sleep and run mode, the Flash memory must always be in power-down mode.
4. Data based on a differential IDD measurement between ADC in reset configuration and continuous ADC
conversion (HSI consumption not included).
5. Data based on a differential IDD measurement between DAC in reset configuration and continuous DAC
conversion of VDD/2. DAC is in buffered mode, output is left floating.
6. Including supply current of internal reference voltage.

6.3.5 Wakeup time from low-power mode

The wakeup times given in the following table are measured with the MSI RC oscillator. The
clock source used to wake up the device depends on the current operating mode:
Sleep mode: the clock source is the clock that was set before entering Sleep mode
Stop mode: the clock source is the MSI oscillator in the range configured before
entering Stop mode
Standby mode: the clock source is the MSI oscillator running at 2.1 MHz
All timings are derived from tests performed under the conditions summarized in Table 13.

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Table 25. Low-power mode wakeup timings

Symbol Parameter Conditions Typ Max(1) Unit

tWUSLEEP Wakeup from Sleep mode fHCLK = 32 MHz 0.4 -

fHCLK = 262 kHz
46 -
Wakeup from Low-power sleep Flash enabled
tWUSLEEP_LP
mode, fHCLK = 262 kHz fHCLK = 262 kHz
46 -
Flash switched OFF
Wakeup from Stop mode,
regulator in Run mode fHCLK = fMSI = 4.2 MHz 8.2 -
ULP bit = 1 and FWU bit = 1
fHCLK = fMSI = 4.2 MHz
7.7 8.9
Voltage range 1 and 2
fHCLK = fMSI = 4.2 MHz s
8.2 13.1
Voltage range 3
tWUSTOP
Wakeup from Stop mode, fHCLK = fMSI = 2.1 MHz 10.2 13.4
regulator in low-power mode fHCLK = fMSI = 1.05 MHz 16 20
ULP bit = 1 and FWU bit = 1
fHCLK = fMSI = 524 kHz 31 37
fHCLK = fMSI = 262 kHz 57 66
fHCLK = fMSI = 131 kHz 112 123
fHCLK = MSI = 65 kHz 221 236
Wakeup from Standby mode
fHCLK = MSI = 2.1 MHz 58 104
ULP bit = 1 and FWU bit = 1
tWUSTDBY
Wakeup from Standby mode
fHCLK = MSI = 2.1 MHz 2.6 3.25 ms
FWU bit = 0
1. Guaranteed by characterization, unless otherwise specified

6.3.6 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.The
external clock signal has to respect the I/O characteristics in Section 6.3.13. However, the
recommended clock input waveform is shown in Figure 14.

Table 26. High-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

CSS is on or
1 8 32 MHz
User external clock source PLL is used
fHSE_ext
frequency CSS is off, PLL
0 8 32 MHz
not used

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Table 26. High-speed external user clock characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD

V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
tw(HSEH)
OSC_IN high or low time 12 - -
tw(HSEL) -
ns
tr(HSE)
OSC_IN rise or fall time - - 20
tf(HSE)
Cin(HSE) OSC_IN input capacitance - 2.6 - pF
1. Guaranteed by design.

Figure 14. High-speed external clock source AC timing diagram

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Low-speed external user clock generated from an external source

The characteristics given in the following table result from tests performed using a low-
speed external clock source, and under the conditions summarized in Table 13.

Table 27. Low-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

User external clock source

fLSE_ext 1 32.768 1000 kHz
frequency
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage
V
OSC32_IN input pin low level
VLSEL - VSS - 0.3VDD
voltage
tw(LSEH)
OSC32_IN high or low time 465 - -
tw(LSEL)
ns
tr(LSE)
OSC32_IN rise or fall time - - 10
tf(LSE)
CIN(LSE) OSC32_IN input capacitance - - 0.6 - pF
1. Guaranteed by design.

Figure 15. Low-speed external clock source AC timing diagram

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High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 1 to 24 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 28. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).

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Table 28. HSE oscillator characteristics(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fOSC_IN Oscillator frequency - 1 24 MHz

RF Feedback resistor - - 200 - k
Recommended load
capacitance versus
C equivalent serial RS = 30 - 20 - pF
resistance of the crystal
(RS)(3)
VDD= 3.3 V,
IHSE HSE driving current VIN = VSS with 30 pF - - 3 mA
load
C = 20 pF 2.5 (startup)
- -
HSE oscillator power fOSC = 16 MHz 0.7 (stabilized)
IDD(HSE) mA
consumption C = 10 pF 2.5 (startup)
- -
fOSC = 16 MHz 0.46 (stabilized)
Oscillator
gm Startup 3.5 - - mA /V
transconductance
tSU(HSE)(4) Startup time VDD is stabilized - 1 - ms
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by characterization results.
3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a humid
environment, due to the induced leakage and the bias condition change. However, it is recommended to take this point into
account if the MCU is used in tough humidity conditions.
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 16). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2. Refer to the application note AN2867 Oscillator design guide for ST
microcontrollers available from the ST website www.st.com.

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Figure 16. HSE oscillator circuit diagram

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Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 29. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).

Table 29. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol Parameter Conditions Min Typ Max Unit

Low speed external oscillator

fLSE - - 32.768 - kHz
frequency
RF Feedback resistor - - 1.2 - M
Recommended load capacitance
C(2) versus equivalent serial RS = 30 k - 8 - pF
resistance of the crystal (RS)(3)
ILSE LSE driving current VDD = 3.3 V, VIN = VSS - - 1.1 A
VDD = 1.8 V - 450 -
LSE oscillator current
IDD (LSE) VDD = 3.0 V - 600 - nA
consumption
VDD = 3.6V - 750 -
gm Oscillator transconductance - 3 - - A/V
tSU(LSE)(4) Startup time VDD is stabilized - 1 - s
1. Guaranteed by characterization results.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 Oscillator
design guide for ST microcontrollers.
3. The oscillator selection can be optimized in terms of supply current using an high quality resonator with
small RS value for example MSIV-TIN32.768kHz. Refer to crystal manufacturer for more details.

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4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.

Note: For CL1 and CL2, it is recommended to use high-quality ceramic capacitors in the 5 pF to
15 pF range selected to match the requirements of the crystal or resonator (see Figure 17).
CL1 and CL2, are usually the same size. The crystal manufacturer typically specifies a load
capacitance which is the series combination of CL1 and CL2.
Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray where
Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it is
between 2 pF and 7 pF.
Caution: To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended
to use a resonator with a load capacitance CL 7 pF. Never use a resonator with a load
capacitance of 12.5 pF.
Example: if the user chooses a resonator with a load capacitance of CL = 6 pF and Cstray =
2 pF, then CL1 = CL2 = 8 pF.

Figure 17. Typical application with a 32.768 kHz crystal

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6.3.7 Internal clock source characteristics

The parameters given in Table 30 are derived from tests performed under the conditions
summarized in Table 13.

High-speed internal (HSI) RC oscillator

Table 30. HSI oscillator characteristics

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency VDD = 3.0 V - 16 - MHz

HSI user-trimmed Trimming code is not a multiple of 16 - 0.4 0.7 %

(1)(2)
TRIM resolution Trimming code is a multiple of 16 - - 1.5 %
VDDA = 3.0 V, TA = 25 C -1(3) - 1(3) %
VDDA = 3.0 V, TA = 0 to 55 C -1.5 - 1.5 %

Accuracy of the VDDA = 3.0 V, TA = -10 to 70 C -2 - 2 %

ACCHSI(2) factory-calibrated VDDA = 3.0 V, TA = -10 to 85 C -2.5 - 2 %
HSI oscillator
VDDA = 3.0 V, TA = -10 to 105 C -4 - 2 %
VDDA = 1.65 V to 3.6 V
-4 - 3 %
TA = -40 to 105 C
HSI oscillator
tSU(HSI)(2) - - 3.7 6 s
startup time
HSI oscillator
IDD(HSI)(2) - - 100 140 A
power consumption
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
2. Guaranteed by characterization results.
3. Guaranteed by test in production.

Low-speed internal (LSI) RC oscillator

Table 31. LSI oscillator characteristics

Symbol Parameter Min Typ Max Unit

fLSI(1) LSI frequency 26 38 56 kHz

LSI oscillator frequency drift
DLSI(2) -10 - 4 %
0C TA 105C
tsu(LSI)(3) LSI oscillator startup time - - 200 s
IDD(LSI) (3) LSI oscillator power consumption - 400 510 nA
1. Guaranteed by test in production.
2. This is a deviation for an individual part, once the initial frequency has been measured.
3. Guaranteed by design.

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Multi-speed internal (MSI) RC oscillator

Table 32. MSI oscillator characteristics

Symbol Parameter Condition Typ Max Unit

MSI range 0 65.5 -

MSI range 1 131 -
kHz
MSI range 2 262 -
Frequency after factory calibration, done at
fMSI MSI range 3 524 -
VDD= 3.3 V and TA = 25 C
MSI range 4 1.05 -
MSI range 5 2.1 - MHz
MSI range 6 4.2 -
ACCMSI Frequency error after factory calibration - 0.5 - %
MSI oscillator frequency drift
DTEMP(MSI)(1) - 3 - %
0 C TA 105 C
MSI oscillator frequency drift
DVOLT(MSI)(1) - - 2.5 %/V
1.65 V VDD 3.6 V, TA = 25 C
MSI range 0 0.75 -
MSI range 1 1 -
MSI range 2 1.5 -
IDD(MSI)(2) MSI oscillator power consumption MSI range 3 2.5 - A
MSI range 4 4.5 -
MSI range 5 8 -
MSI range 6 15 -
MSI range 0 30 -
MSI range 1 20 -
MSI range 2 15 -
MSI range 3 10 -
MSI range 4 6 -
tSU(MSI) MSI oscillator startup time s
MSI range 5 5 -
MSI range 6,
Voltage range 1 3.5 -
and 2
MSI range 6,
5 -
Voltage range 3

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Table 32. MSI oscillator characteristics (continued)

Symbol Parameter Condition Typ Max Unit

MSI range 0 - 40
MSI range 1 - 20
MSI range 2 - 10
MSI range 3 - 4
MSI range 4 - 2.5
tSTAB(MSI)(2) MSI oscillator stabilization time s
MSI range 5 - 2
MSI range 6,
Voltage range 1 - 2
and 2
MSI range 3,
- 3
Voltage range 3
Any range to
- 4
range 5
fOVER(MSI) MSI oscillator frequency overshoot MHz
Any range to
- 6
range 6
1. This is a deviation for an individual part, once the initial frequency has been measured.
2. Guaranteed by characterization results.

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6.3.8 PLL characteristics

The parameters given in Table 33 are derived from tests performed under the conditions
summarized in Table 13.

Table 33. PLL characteristics

Value
Symbol Parameter Unit
Min Typ Max(1)

PLL input clock(2) 2 - 24 MHz

fPLL_IN
PLL input clock duty cycle 45 - 55 %
fPLL_OUT PLL output clock 2 - 32 MHz
PLL lock time
tLOCK PLL input = 16 MHz - 115 160 s
PLL VCO = 96 MHz
Jitter Cycle-to-cycle jitter - - 600 ps
IDDA(PLL) Current consumption on VDDA - 220 450
A
IDD(PLL) Current consumption on VDD - 120 150
1. Guaranteed by characterization results.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.

6.3.9 Memory characteristics

The characteristics are given at TA = -40 to 105 C unless otherwise specified.

RAM memory

Table 34. RAM and hardware registers

Symbol Parameter Conditions Min Typ Max Unit

VRM Data retention mode(1) STOP mode (or RESET) 1.65 - - V

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).

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Flash memory and data EEPROM

Table 35. Flash memory and data EEPROM characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

Operating voltage
VDD - 1.65 - 3.6 V
Read / Write / Erase
Programming/ erasing Erasing - 3.28 3.94
tprog time for byte / word / ms
double word / half-page Programming - 3.28 3.94

Average current during

the whole programming / - 600 900 A
erase operation
IDD Maximum current (peak) TA = 25 C, VDD = 3.6 V
during the whole
- 1.5 2.5 mA
programming / erase
operation
1. Guaranteed by design.

Table 36. Flash memory and data EEPROM endurance and retention
Value
Symbol Parameter Conditions Unit
Min(1) Typ Max

Cycling (erase / write)

10 - -
Program memory TA = -40C to
NCYC(2) kcycles
Cycling (erase / write) 105 C
300 - -
EEPROM data memory
Data retention (program memory) after
30 - -
10 kcycles at TA = 85 C
TRET = +85 C
Data retention (EEPROM data memory)
30 - -
after 300 kcycles at TA = 85 C
(2)
tRET years
Data retention (program memory) after
10 - -
10 kcycles at TA = 105 C
TRET = +105 C
Data retention (EEPROM data memory)
10 - -
after 300 kcycles at TA = 105 C
1. Guaranteed by characterization results.
2. Characterization is done according to JEDEC JESD22-A117.

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6.3.10 FSMC characteristics

Asynchronous waveforms and timings
Figure 18 through Figure 21 represent asynchronous waveforms and Table 37 through
Table 40 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
AddressSetupTime = 0 (AddressSetupTime = 1, for asynchronous multiplexed modes)
AddressHoldTime = 1
DataSetupTime = 1

Figure 18. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

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W Y1$'9B1(

WZ1$'9

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069

1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.

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Table 37. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time THCLK -2 THCLK ns

tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 0 2 ns
tw(NOE) FSMC_NOE low time THCLK THCLK - 1 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 4 ns
th(A_NOE) Address hold time after FSMC_NOE high THCLK + 1.5 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 2*THCLK - 0.5 - ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK - ns
tsu(Data_NOE) Data to FSMC_NOEx high setup time THCLK - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns
tw(NADV) FSMC_NADV low time - THCLK ns
1. CL = 30 pF.

Figure 19. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

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)60&B1([

)60&B12(
WY1:(B1( WZ1:( W K1(B1:(

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W Y1$'9B1(
WZ1$'9
)60&B1$'9

DL

1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.

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Table 38. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 2*THCLK -3 2*THCLK +2 ns

tv(NWE_NE) FSMC_NEx low to FSMC_NWE low 0.5 1 ns
tw(NWE) FSMC_NWE low time THCLK - 2 THCLK + 3 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - 2.5 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns
th(A_NWE) Address hold time after FSMC_NWE high THCLK - 2.5 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0 ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK - 4 - ns
tv(Data_NE) FSMC_NEx low to Data valid - THCLK ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK - 2.5 - ns
1. CL = 30 pF.

Figure 20. Asynchronous multiplexed PSRAM/NOR read waveforms

TW.%

&3-#?.%

TV./%?.% T H.%?./%

&3-#?./%

T W./%

&3-#?.7%

TV!?.% T H!?./%

&3-#?!;= !DDRESS
TV",?.% TH",?./%

&3-#?.",;= .",

TH$ATA?.%

TSU$ATA?.%

T V!?.% TSU$ATA?./% TH$ATA?./%

&3-#? !$;= !DDRESS $ATA

T V.!$6?.% TH!$?.!$6
TW.!$6

&3-#?.!$6

AIB

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Table 39. Asynchronous multiplexed PSRAM/NOR read timings(1)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 3*THCLK - 1.5 3*THCLK + 1 ns

tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 2*THCLK - 1 2*THCLK ns
tw(NOE) FSMC_NOE low time THCLK - 0.5 THCLK + 0.5 ns
th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 5 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1.5 2 ns
tw(NADV) FSMC_NADV low time THCLK - 0.5 THCLK ns
FSMC_AD(address) valid hold time after
th(AD_NADV) THCLK - 6 - ns
FSMC_NADV high
th(A_NOE) Address hold time after FSMC_NOE high 2*THCLK - 1 - ns
th(BL_NOE) FSMC_BL time after FSMC_NOE high 1.5 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0 ns
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK - ns
tsu(Data_NOE) Data to FSMC_NOE high setup time THCLK - ns
th(Data_NE) Data hold time after FSMC_NEx high 0 - ns
th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns
1. CL = 30 pF.

Figure 21. Asynchronous multiplexed PSRAM/NOR write waveforms

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W Y1$'9B1( WK$'B1$'9
WZ1$'9

)60&B1$'9

DL%

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Table 40. Asynchronous multiplexed PSRAM/NOR write timings(1)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 4*THCLK - 3 4*THCLK + 2 ns

tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK THCLK + 1 ns
tw(NWE) FSMC_NWE low time 2*THCLK - 2 2*THCLK + 4 ns
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - 2.5 - ns
tv(A_NE) FSMC_NEx low to FSMC_A valid - 6 ns
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 1.5 2 ns
tw(NADV) FSMC_NADV low time THCLK - 4 THCLK + 4 ns
FSMC_AD (address) valid hold time after
th(AD_NADV) THCLK - 5 - ns
FSMC_NADV high
th(A_NWE) Address hold time after FSMC_NWE high THCLK - 2.5 - ns
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK - 3 - ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns
tv(Data_NADV) FSMC_NADV high to Data valid - THCLK + 6 ns
th(Data_NWE) Data hold time after FSMC_NWE high THCLK - 2.5 - ns
1. CL = 30 pF.

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Synchronous waveforms and timings

Figure 22 through Figure 25 represent synchronous waveforms and Table 42 through
Table 44 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
BurstAccessMode = FSMC_BurstAccessMode_Enable;
MemoryType = FSMC_MemoryType_CRAM;
WriteBurst = FSMC_WriteBurst_Enable;
CLKDivision = 1;
DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM

Figure 22. Synchronous multiplexed NOR/PSRAM read timings

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TD#,+, !$)6 TH#,+( !$6

TD#,+, !$6 TSU!$6 #,+( TSU!$6 #,+( TH#,+( !$6

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&3-#?.7!)4
7!)4#&'B7!)40/,B
TSU.7!)46 #,+( TH#,+( .7!)46
AIG

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Table 41. Synchronous multiplexed NOR/PSRAM read timings(1)

Symbol Parameter Min Max Unit

2*THCLK -
tw(CLK) FSMC_CLK period - ns
0.5
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x = 0...2) - 0 ns
THCLK +
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x = 0...2) - ns
1.5
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 3 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 3.5 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x = 16...25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x = 16...25) 0 - ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - THCLK - 1 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 2.5 - ns
td(CLKL-ADV) FSMC_CLK low to FSMC_AD[15:0] valid - 4 ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 - ns
tsu(ADV-CLKH) FSMC_A/D[15:0] valid data before FSMC_CLK high 6 - ns
th(CLKH-ADV) FSMC_A/D[15:0] valid data after FSMC_CLK high 4 - ns
tsu(NWAITV-CLKH) FSMC_NWAIT valid before FSMC_CLK high 6 - ns
th(CLKH-NWAITV) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
1. CL = 30 pF.

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Figure 23. Synchronous multiplexed PSRAM write timings

TW#,+ TW#,+ "53452.

&3-#?#,+

$ATALATENCY
TD#,+, .%X, TD#,+, .%X(

&3-#?.%X

TD#,+, .!$6, TD#,+, .!$6(

&3-#?.!$6

TD#,+, !6 TD#,+, !)6

&3-#?!;=

TD#,+, .7%, TD#,+, .7%(

&3-#?.7%

TD#,+, !$)6 TD#,+, $ATA

TD#,+, !$6 TD#,+, $ATA

&3-#?!$;= !$;= $ $

&3-#?.7!)4
7!)4#&'B7!)40/,B TSU.7!)46 #,+( TH#,+( .7!)46

TD#,+, .",(

&3-#?.",

AIF

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Table 42. Synchronous multiplexed PSRAM write timings(1)

Symbol Parameter Min Max Unit

tw(CLK) FSMC_CLK period 2*THCLK - ns

td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x = 0...2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x = 0...2) 0 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 0 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x = 16...25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x = 16...25) THCLK + 4 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 0 ns
td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 1 - ns
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 5 - ns
td(CLKL-DATA) FSMC_A/D[15:0] valid after FSMC_CLK low - 6 ns
tsu(NWAITV-CLKH) FSMC_NWAIT valid before FSMC_CLK high 6 - ns
th(CLKH-NWAITV) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 1 - ns
1. CL = 30 pF.

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Figure 24. Synchronous non-multiplexed NOR/PSRAM read timings

TW#,+ TW#,+ "53452.

&3-#?#,+

TD#,+, .%X, TD#,+, .%X(

$ATALATENCY
&3-#?.%X

TD#,+, .!$6, TD#,+, .!$6(

&3-#?.!$6

TD#,+, !6 TD#,+, !)6

&3-#?!;=

TD#,+, ./%, TD#,+, ./%(

&3-#?./%
TSU$6 #,+( TH#,+( $6
TSU$6 #,+( TH#,+( $6

&3-#?$;= $ $

TSU.7!)46 #,+( TH#,+( .7!)46

&3-#?.7!)4
7!)4#&'B7!)40/,B
TSU.7!)46 #,+( T H#,+( .7!)46

&3-#?.7!)4
7!)4#&'B7!)40/,B
TSU.7!)46 #,+( TH#,+( .7!)46

AIF

Table 43. Synchronous non-multiplexed NOR/PSRAM read timings(1)

Symbol Parameter Min Max Unit

2*THCLK -
tw(CLK) FSMC_CLK period - ns
0.5
td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x = 0...2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x = 0...2) 0 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 3 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 3.5 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x = 16...25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x = 16...25) 0 - ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - THCLK + 1 ns
td(CLKL-NOEH) FSMC_CLK low to FSMC_NOE high 2.5 - ns
FSMC_D[15:0] valid data before FSMC_CLK
tsu(DV-CLKH) 4 - ns
high
th(CLKH-DV) FSMC_D[15:0] valid data after FSMC_CLK high 4 - ns

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STM32L151xD STM32L152xD Electrical characteristics

Table 43. Synchronous non-multiplexed NOR/PSRAM read timings(1) (continued)

Symbol Parameter Min Max Unit

tsu(NWAITV-CLKH) FSMC_NWAIT valid before FSMC_CLK high 6 - ns

th(CLKH-NWAITV) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
1. CL = 30 pF.

Figure 25. Synchronous non-multiplexed PSRAM write timings

TW#,+ TW#,+ "53452.

&3-#?#,+

TD#,+, .%X, TD#,+, .%X(

$ATALATENCY
&3-#?.%X

TD#,+, .!$6, TD#,+, .!$6(

&3-#?.!$6

TD#,+, !6 TD#,+, !)6

&3-#?!;=

TD#,+, .7%, TD#,+, .7%(

&3-#?.7%

TD#,+, $ATA TD#,+, $ATA

&3-#?$;= $ $

&3-#?.7!)4
7!)4#&'B7!)40/,B TSU.7!)46 #,+( TD#,+, .",(

TH#,+( .7!)46

&3-#?.",

AIG

Table 44. Synchronous non-multiplexed PSRAM write timings(1)

Symbol Parameter Min Max Unit

tw(CLK) FSMC_CLK period 2*THCLK -3 - ns

td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x = 0...2) - 0 ns
td(CLKL-NExH) FSMC_CLK low to FSMC_NEx high (x = 0...2) 1 - ns
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 5 ns
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 7 - ns
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x = 16...25) - 0 ns
td(CLKL-AIV) FSMC_CLK low to FSMC_Ax invalid (x = 16...25) THCLK + 4 - ns
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 2 ns

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Table 44. Synchronous non-multiplexed PSRAM write timings(1) (continued)

Symbol Parameter Min Max Unit

td(CLKL-NWEH) FSMC_CLK low to FSMC_NWE high 5 - ns

td(CLKL-DATA) FSMC_D[15:0] valid data after FSMC_CLK low - 7 ns
td(CLKL-NBLH) FSMC_CLK low to FSMC_NBL high 3 - ns
tsu(NWAITV-CLKH) FSMC_NWAIT valid before FSMC_CLK high 6 - ns
th(CLKH-NWAITV) FSMC_NWAIT valid after FSMC_CLK high 0 - ns
1. CL = 30 pF.

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STM32L151xD STM32L152xD Electrical characteristics

6.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 45. They are based on the EMS levels and classes
defined in application note AN1709.

Table 45. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, LQFP100, TA = +25 C,

Voltage limits to be applied on any I/O pin to
VFESD fHCLK = 32 MHz 2B
induce a functional disturbance
conforms to IEC 61000-4-2
VDD = 3.3 V, LQFP100, TA = +25
Fast transient voltage burst limits to be
C,
VEFTB applied through 100 pF on VDD and VSS 4A
fHCLK = 32 MHz
pins to induce a functional disturbance
conforms to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.

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To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 46. EMI characteristics

Max vs. frequency range
Monitored 4 MHz 16 MHz 32 MHz
Symbol Parameter Conditions Unit
frequency band
voltage voltage voltage
range 3 range 2 range 1

VDD = 3.3 V, 0.1 to 30 MHz 3 -6 -5

TA = 25 C, 30 to 130 MHz 18 4 -7 dBV
SEMI Peak level LQFP100 package
compliant with IEC 130 MHz to 1GHz 15 5 -7
61967-2 SAE EMI Level 2.5 2 1 -

6.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.

Table 47. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic
TA = +25 C, conforming
VESD(HBM) discharge voltage 2 2000 V
to JESD22-A114
(human body model)
Electrostatic
TA = +25 C, conforming
VESD(CDM) discharge voltage III 500 V
to JESD22-C101
(charge device model)
1. Guaranteed by characterization results.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 48. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 C conforming to JESD78A II level A

6.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard pins) should be avoided during normal product operation.
However, in order to give an indication of the robustness of the microcontroller in cases
when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of 5 A/+0 A range), or other functional failure (for example reset occurrence oscillator
frequency deviation, LCD levels).
The test results are given in the Table 49.

Table 49. I/O current injection susceptibility

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on all 5 V tolerant (FT) pins -5 (1) NA

IINJ Injected current on BOOT0 -0 NA mA
(1)
Injected current on any other pin -5 +5
1. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject
negative currents.

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6.3.14 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 56 are derived from tests
performed under the conditions summarized in Table 13. All I/Os are CMOS and TTL
compliant.
Table 50. I/O static characteristics
Min
Symbol Parameter Conditions Typ Max Unit

0.3VDD
(1)
VIL Input low level voltage - - -

Standard I/O - -
0.7 VDD V
VIH Input high level voltage FT I/O - -
BOOT0 I/O - -
I/O Schmitt trigger voltage 10%
Vhys Standard I/O - -
hysteresis(2) VDD(3)
VSS VIN VDD
- - 50
I/Os with LCD
VSS VIN VDD
I/Os with analog - - 50
switches
VSS VIN VDD
nA
I/Os with analog - - 50
Ilkg Input leakage current(4) switches and LCD
VSS VIN VDD
- - 250
I/Os with USB
VSS VIN VDD
- - 50
Standard I/Os
FT I/O
- - 10 uA
VDD VIN 5V
Weak pull-up equivalent
RPU VIN = VSS 30 45 60 k
resistor(1)(5)
Weak pull-down equivalent
RPD VIN = VDD 30 45 60 k
resistor(5)
CIO I/O pin capacitance - - 5 - pF
1. Guaranteed by test in production
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results.
3. With a minimum of 200 mV. Guaranteed by characterization results.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS.
.

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Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to 8 mA, and sink or
source up to 20 mA with the non-standard VOL/VOH specifications given in Table 51.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD() (see Table 11).
The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS() (see Table 11).

Output voltage levels

Unless otherwise specified, the parameters given in Table 51 are derived from tests
performed under the conditions summarized in Table 13. All I/Os are CMOS and TTL
compliant.

Table 51. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1)(2) Output low level voltage for an I/O pin IIO = 8 mA - 0.4
VOH (2)(3)
Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V VDD-0.4 -
VOL (3)(4) Output low level voltage for an I/O pin IIO = 4 mA - 0.45
V
VOH (3)(4) Output high level voltage for an I/O pin 1.65 V < VDD < 3.6 V V -0.45 -
DD

VOL(1)(4) Output low level voltage for an I/O pin IIO = 20 mA - 1.3
VOH (3)(4) Output high level voltage for an I/O pin 2.7 V < VDD < 3.6 V VDD-1.3 -
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 11
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. Guaranteed by test in production.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 11 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Guaranteed by characterization results.

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Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 52, respectively.
Unless otherwise specified, the parameters given in Table 52 are derived from tests
performed under the conditions summarized in Table 13.

Table 52. I/O AC characteristics(1)

OSPEEDRx
[1:0] bit Symbol Parameter Conditions Min Max(2) Unit
value(1)

CL = 50 pF, VDD = 2.7 V to 3.6 V - 400

fmax(IO)out Maximum frequency(3) kHz
CL = 50 pF, VDD = 1.65 V to 2.7 V - 400
00
tf(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 625
Output rise and fall time ns
tr(IO)out CL = 50 pF, VDD = 1.65 V to 2.7 V - 625
CL = 50 pF, VDD = 2.7 V to 3.6 V - 2
fmax(IO)out Maximum frequency(3) MHz
CL = 50 pF, VDD = 1.65 V to 2.7 V - 1
01
tf(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 125
Output rise and fall time ns
tr(IO)out CL = 50 pF, VDD = 1.65 V to 2.7 V - 250
CL = 50 pF, VDD = 2.7 V to 3.6 V - 10
Fmax(IO)out Maximum frequency(3) MHz
CL = 50 pF, VDD = 1.65 V to 2.7 V - 2
10
tf(IO)out CL = 50 pF, VDD = 2.7 V to 3.6 V - 25
Output rise and fall time ns
tr(IO)out CL = 50 pF, VDD = 1.65 V to 2.7 V - 125
CL = 30 pF, VDD = 2.7 V to 3.6 V - 50
Fmax(IO)out Maximum frequency(3) MHz
CL = 50 pF, VDD = 1.65 V to 2.7 V - 8
11
tf(IO)out CL = 30 pF, VDD = 2.7 V to 3.6 V - 5
Output rise and fall time
tr(IO)out CL = 50 pF, VDD = 1.65 V to 2.7 V - 30
ns
Pulse width of external
- tEXTIpw signals detected by the - 8 -
EXTI controller
1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the STM32L151xx, STM32L152xx and STM32L162xx
reference manual for a description of GPIO Port configuration register.
2. Guaranteed by design.
3. The maximum frequency is defined in Figure 26.

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Figure 26. I/O AC characteristics definition

 

 

 

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6.3.15 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 53)
Unless otherwise specified, the parameters given in Table 53 are derived from tests
performed under the conditions summarized in Table 13.

Table 53. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

NRST input low level

VIL(NRST)(1) - - - 0.3 VDD
voltage
NRST input high
VIH(NRST)(1) - 0.7 VDD - -
level voltage
V
IOL = 2 mA
- -
NRST output low 2.7 V < VDD < 3.6 V
VOL(NRST)(1) 0.4
level voltage IOL = 1.5 mA
- -
1.65 V < VDD < 2.7 V
NRST Schmitt trigger
Vhys(NRST)(1) - - 10%VDD(2) - mV
voltage hysteresis
Weak pull-up
RPU VIN = VSS 30 45 60 k
equivalent resistor(3)
NRST input filtered
VF(NRST)(1) - - - 50 ns
pulse
NRST input not
VNF(NRST)(3) - 350 - - ns
filtered pulse
1. Guaranteed by design.
2. With a minimum of 200 mV.
3. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is around 10%.

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Figure 27. Recommended NRST pin protection

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1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 53. Otherwise the reset will not be taken into account by the device.

6.3.16 TIM timer characteristics

The parameters given in the Table 54 are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output ction
characteristics (output compare, input capture, external clock, PWM output).

Table 54. TIMx(1) characteristics

Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 32 MHz 31.25 - ns

Timer external clock - 0 fTIMxCLK/2 MHz

fEXT
frequency on CH1 to CH4 f
TIMxCLK = 32 MHz 0 16 MHz
ResTIM Timer resolution - 16 bit
16-bit counter clock - 1 65536 tTIMxCLK
period when internal clock
tCOUNTER
is selected (timers fTIMxCLK = 32 MHz 0.0312 2048 s
prescaler disabled)
- - 65536 65536 tTIMxCLK
tMAX_COUNT Maximum possible count
fTIMxCLK = 32 MHz - 134.2 s
1. TIMx is used as a general term to refer to the TIM2, TIM3 and TIM4 timers.

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6.3.17 Communications interfaces

I2C interface characteristics
The device I2C interface meets the requirements of the standard I2C communication
protocol with the following restrictions: SDA and SCL are not true open-drain I/O pins.
When configured as open-drain, the PMOS connected between the I/O pin and VDD is
disabled, but is still present.
The I2C characteristics are described in Table 55. Refer also to Section 6.3.14: I/O port
characteristics for more details on the input/output ction characteristics (SDA and SCL).

Table 55. I2C characteristics

Standard mode
Fast mode I2C(1)(2)
I2C(1)(2)
Symbol Parameter Unit
Min Max Min Max

tw(SCLL) SCL clock low time 4.7 - 1.3 -

s
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
th(SDA) SDA data hold time - 3450(3) - 900(3)
tr(SDA) ns
SDA and SCL rise time - 1000 - 300
tr(SCL)
tf(SDA)
SDA and SCL fall time - 300 - 300
tf(SCL)
th(STA) Start condition hold time 4.0 - 0.6 -
Repeated Start condition s
tsu(STA) 4.7 - 0.6 -
setup time
tsu(STO) Stop condition setup time 4.0 - 0.6 - s
Stop to Start condition time
tw(STO:STA) 4.7 - 1.3 - s
(bus free)
Capacitive load for each bus
Cb - 400 - 400 pF
line
Pulse width of spikes that
tSP are suppressed by the 0 50(4) 0 50(4) ns
analog filter
1. Guaranteed by design.
2. fPCLK1 must be at least 2 MHz to achieve standard mode IC frequencies. It must be at least 4 MHz to
achieve fast mode IC frequencies. It must be a multiple of 10 MHz to reach the 400 kHz maximum IC fast
mode clock.
3. The maximum Data hold time has only to be met if the interface does not stretch the low period of SCL
signal.
4. The minimum width of the spikes filtered by the analog filter is above tSP(max).

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Figure 28. I2C bus AC waveforms and measurement circuit

s/ s/

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1. RS = series protection resistor.

2. RP = external pull-up resistor.
3. VDD_I2C is the I2C bus power supply.
4. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.

Table 56. SCL frequency (fPCLK1= 32 MHz, VDD = VDD_I2C = 3.3 V)(1)(2)
I2C_CCR value
fSCL (kHz)
RP = 4.7 k

400 0x801B
300 0x8024
200 0x8035
100 0x00A0
50 0x0140
20 0x0320
1. RP = External pull-up resistance, fSCL = I2C speed.
2. For speeds around 200 kHz, the tolerance on the achieved speed is of 5%. For other speed ranges, the
tolerance on the achieved speed is 2%. These variations depend on the accuracy of the external
components used to design the application.

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SPI characteristics
Unless otherwise specified, the parameters given in the following table are derived from
tests performed under the conditions summarized in Table 13.
Refer to Section 6.3.13: I/O current injection characteristics for more details on the
input/output alternate function characteristics (NSS, SCK, MOSI, MISO).

Table 57. SPI characteristics(1)

Symbol Parameter Conditions Min Max(2) Unit

Master mode - 16
fSCK
SPI clock frequency Slave mode - 16 MHz
1/tc(SCK)
Slave transmitter - 12(3)
tr(SCK)(2)
SPI clock rise and fall time Capacitive load: C = 30 pF - 6 ns
tf(SCK)(2)
DuCy(SCK) SPI slave input clock duty cycle Slave mode 30 70 %
tsu(NSS) NSS setup time Slave mode 4tHCLK -
th(NSS) NSS hold time Slave mode 2tHCLK -
tw(SCKH)(2)
SCK high and low time Master mode tSCK/25 tSCK/2+3
tw(SCKL)(2)
tsu(MI)(2) Master mode 5 -
Data input setup time
tsu(SI)(2) Slave mode 6 -
(2)
th(MI) Master mode 5 - ns
Data input hold time
(2)
th(SI) Slave mode 5 -
ta(SO)(4) Data output access time Slave mode 0 3tHCLK
tv(SO) (2) Data output valid time Slave mode - 33
(2)
tv(MO) Data output valid time Master mode - 6.5
(2)
th(SO) Slave mode 17 -
Data output hold time
th(MO)(2) Master mode 0.5 -
1. The characteristics above are given for voltage range 1.
2. Guaranteed by characterization results.
3. The maximum SPI clock frequency in slave transmitter mode is given for an SPI slave input clock duty cycle (DuCy(SCK))
ranging between 40 to 60%.
4. Min time is for the minimum time to drive the output and max time is for the maximum time to validate the data.

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Electrical characteristics STM32L151xD STM32L152xD

Figure 29. SPI timing diagram - slave mode and CPHA = 0

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Figure 30. SPI timing diagram - slave mode and CPHA = 1(1)

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1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.

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Figure 31. SPI timing diagram - master mode(1)

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1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD.

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Electrical characteristics STM32L151xD STM32L152xD

USB characteristics
The USB interface is USB-IF certified (full speed).

Table 58. USB startup time

Symbol Parameter Max Unit

tSTARTUP (1) USB transceiver startup time 1 s

1. Guaranteed by design.

Table 59. USB DC electrical characteristics

Symbol Parameter Conditions Min.(1) Max.(1) Unit

Input levels

VDD USB operating voltage - 3.0 3.6 V

VDI(2) Differential input sensitivity I(USB_DP, USB_DM) 0.2 -
VCM(2) Differential common mode range Includes VDI range 0.8 2.5 V
VSE(2) Single ended receiver threshold - 1.3 2.0

Output levels

VOL(3) Static output level low RL of 1.5 k to 3.6 V(4) - 0.3

V
(3) (4)
VOH Static output level high RL of 15 k to VSS 2.8 3.6
1. All the voltages are measured from the local ground potential.
2. Guaranteed by characterization results.
3. Guaranteed by test in production.
4. RL is the load connected on the USB drivers.

Figure 32. USB timings: definition of data signal rise and fall time

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Table 60. USB: full speed electrical characteristics

Driver characteristics(1)

Symbol Parameter Conditions Min Max Unit

tr Rise time(2) CL = 50 pF 4 20 ns
tf Fall Time(2) CL = 50 pF 4 20 ns

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Table 60. USB: full speed electrical characteristics (continued)

Driver characteristics(1)

Symbol Parameter Conditions Min Max Unit

trfm Rise/ fall time matching tr/tf 90 110 %

VCRS Output signal crossover voltage 1.3 2.0 V
1. Guaranteed by design.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).

I2S characteristics

Table 61. I2S characteristics

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main Clock Output 256 x 8K 256xFs (1) MHz

Master data: 32 bits - 64xFs
fCK I2S clock frequency MHz
Slave data: 32 bits - 64xFs
DCK I2S clock frequency duty cycle Slave receiver, 48KHz 30 70 %
tr(CK) I2S clock rise time 8
Capacitive load CL=30pF -
tf(CK) I2S clock fall time 8
tv(WS) WS valid time Master mode 4 24
th(WS) WS hold time Master mode 0 -
tsu(WS) WS setup time Slave mode 15 -
th(WS) WS hold time Slave mode 0 -
tsu(SD_MR) Data input setup time Master receiver 8 -
tsu(SD_SR) Data input setup time Slave receiver 9 -
th(SD_MR) Master receiver 5 - ns
Data input hold time
th(SD_SR) Slave receiver 4 -
Slave transmitter
tv(SD_ST) Data output valid time - 64
(after enable edge)
Slave transmitter
th(SD_ST) Data output hold time 22 -
(after enable edge)
Master transmitter
tv(SD_MT) Data output valid time - 12
(after enable edge)
Master transmitter
th(SD_MT) Data output hold time 8 -
(after enable edge)
1. The maximum for 256xFs is 8 MHz

Note: Refer to the I2S section of the product reference manual for more details about the sampling
frequency (Fs), fMCK, fCK and DCK values. These values reflect only the digital peripheral
behavior, source clock precision might slightly change them. DCK depends mainly on the

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ODD bit value, digital contribution leads to a min of (I2SDIV/(2*I2SDIV+ODD) and a max of
(I2SDIV+ODD)/(2*I2SDIV+ODD). Fs max is supported for each mode/condition.

Figure 33. I2S slave timing diagram (Philips protocol)(1)

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1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

Figure 34. I2S master timing diagram (Philips protocol)(1)

TF#+ TR#+

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TW#+(

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TV73 TW#+, TH73

73OUTPUT
TV3$?-4 TH3$?-4

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AIB

1. Guaranteed by characterization results.

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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6.3.18 SDIO characteristics

Table 62. SDIO characteristics(1)

Symbol Parameter Conditions Min Max Unit

fPP Clock frequency in data transfer mode CL 30 pF 0 24 MHz

tW(CKL) Clock low time, fPP = 24 MHz CL 30 pF 20(2)
-
tW(CKH) Clock high time, fPP = 24 MHz CL 30 pF 18(2)
-
ns
tr Clock rise time, fPP = 24 MHz CL 30 pF - 5
tf Clock fall time, fPP = 24 MHz CL 30 pF - 5
CMD, D inputs (referenced to CK) in SD default mode
From 2.8
- - -
to 3.6 V
tISU Input setup time, fPP = 24 MHz CL 30 pF 2 -
ns
tIH Input hold time, fPP = 24 MHz CL 30 pF 1.6 -
CMD, D outputs (referenced to CK) in SD default mode
tOVD Output valid default time, fPP = 24 MHz CL 30 pF 0 14
ns
tOHD Output hold default time, fPP = 24 MHz CL 30 pF 0 -
1. Guaranteed by characterization results.
2. Values measured with a threshold level equal to VDD/2.

Figure 35. SDIO timings

t<, t<>

<

Ks K,

D

/^h /,

D

-36

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6.3.19 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 64 are guaranteed by design.

Table 63. ADC clock frequency

Symbol Parameter Conditions Min Max Unit

VREF+ = VDDA 16
VREF+ < VDDA
8
2.4 V VDDA 3.6 V VREF+ > 2.4 V
Voltage
ADC clock VREF+ < VDDA
fADC range 1 & 2 0.480 4 MHz
frequency VREF+ 2.4 V
VREF+ = VDDA 8
1.8 V VDDA 2.4 V
VREF+ < VDDA 4
Voltage range 3 4

Table 64. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA Power supply - 1.8 - 3.6

VREF+ Positive reference voltage - 1.8(1) - VDDA V
VREF- Negative reference voltage - - VSSA -
IVDDA Current on the VDDA input pin - - 1000 1450
A
Peak - 700
IVREF(2) Current on the VREF input pin 400
Average - 450
VAIN Conversion voltage range(3) - 0(4) - VREF+ V
Direct channels - - 1
12-bit sampling rate Msps
Multiplexed channels - - 0.76
Direct channels - - 1.07
10-bit sampling rate Msps
Multiplexed channels - - 0.8
fS
Direct channels - - 1.23
8-bit sampling rate Msps
Multiplexed channels - - 0.89
Direct channels - - 1.45
6-bit sampling rate Msps
Multiplexed channels - - 1

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Table 64. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Direct channels
0.25 - -
2.4 V VDDA 3.6 V
Multiplexed channels
0.56 - -
2.4 V VDDA 3.6 V
s
tS(5) Sampling time Direct channels
0.56 - -
1.8 V VDDA 2.4 V
Multiplexed channels
1 - -
1.8 V VDDA 2.4 V
- 4 - 384 1/fADC
fADC = 16 MHz 1 - 24.75 s
Total conversion time
tCONV 4 to 384 (sampling phase) +12
(including sampling time) - 1/fADC
(successive approximation)

Internal sample and hold Direct channels - -

CADC 16 pF
capacitor Multiplexed channels - -

External trigger frequency 12-bit conversions - - Tconv+1 1/fADC

fTRIG
Regular sequencer 6/8/10-bit conversions - - Tconv 1/fADC

External trigger frequency 12-bit conversions - - Tconv+2 1/fADC

fTRIG
Injected sequencer 6/8/10-bit conversions - - Tconv+1 1/fADC
RAIN(6) Signal source impedance - - 50 k

Injection trigger conversion fADC = 16 MHz 219 - 281 ns

tlat
latency - 3.5 - 4.5 1/fADC

Regular trigger conversion fADC = 16 MHz 156 - 219 ns

tlatr
latency - 2.5 - 3.5 1/fADC
tSTAB Power-up time - - - 3.5 s
1. The Vref+ input can be grounded if neither the ADC nor the DAC are used (this allows to shut down an external voltage
reference).
2. The current consumption through VREF is composed of two parameters:
- one constant (max 300 A)
- one variable (max 400 A), only during sampling time + 2 first conversion pulses
So, peak consumption is 300+400 = 700 A and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 A at
1Msps
3. VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA, depending on the package.
Refer to Section 4: Pin descriptions for further details.
4. VSSA or VREF- must be tied to ground.
5. Minimum sampling time is reached for an external input impedance limited to a value as defined in Table 66: Maximum
source impedance RAIN max.
6. External impedance has another high value limitation when using short sampling time as defined in Table 66: Maximum
source impedance RAIN max.

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Electrical characteristics STM32L151xD STM32L152xD

Table 65. ADC accuracy(1)(2)

Symbol Parameter Test conditions Min(3) Typ Max(3) Unit

ET Total unadjusted error - 2 4

EO Offset error 2.4 V VDDA 3.6 V - 1 2
2.4 V VREF+ 3.6 V
EG Gain error - 1.5 3.5 LSB
fADC = 8 MHz, RAIN = 50
ED Differential linearity error TA = -40 to 105 C - 1 2
EL Integral linearity error - 1.7 3
ENOB Effective number of bits 9.2 10 - bits
2.4 V VDDA 3.6 V
Signal-to-noise and VDDA = VREF+
SINAD 57.5 62 -
distortion ratio fADC = 16 MHz, RAIN = 50
TA = -40 to 105 C dB
SNR Signal-to-noise ratio 57.5 62 -
Finput=10kHz
THD Total harmonic distortion - -70 -65
ENOB Effective number of bits 9.2 10 - bits
1.8 V VDDA 2.4 V
Signal-to-noise and VDDA = VREF+
SINAD 57.5 62 -
distortion ratio fADC = 8 MHz or 4 MHz, RAIN = 50
TA = -40 to 105 C dB
SNR Signal-to-noise ratio 57.5 62 -
Finput=10kHz
THD Total harmonic distortion - -70 -65
ET Total unadjusted error - 4 6.5
EO Offset error 2.4 V VDDA 3.6 V - 2 4
1.8 V VREF+ 2.4 V
EG Gain error - 4 6 LSB
fADC = 4 MHz, RAIN = 50
ED Differential linearity error TA = -40 to 105 C - 1 2
EL Integral linearity error - 1.5 3
ET Total unadjusted error - 2 3
EO Offset error 1.8 V VDDA 2.4 V - 1 1.5
1.8 V VREF+ 2.4 V
EG Gain error - 1.5 2 LSB
fADC = 4 MHz, RAIN = 50
ED Differential linearity error TA = -40 to 105 C - 1 2
EL Integral linearity error - 1 1.5
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative injection current: Injecting a negative current on any analog input pins should be avoided as
this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to
add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 6.3.13 does not affect the ADC
accuracy.
3. Guaranteed by characterization results.

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STM32L151xD STM32L152xD Electrical characteristics

Figure 36. ADC accuracy characteristics

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Figure 37. Typical connection diagram using the ADC

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1. Refer to Table 66: Maximum source impedance RAIN max for the value of RAIN and Table 64: ADC
characteristics for the value of CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.

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Electrical characteristics STM32L151xD STM32L152xD

Figure 38. Maximum dynamic current consumption on VREF+ supply pin during ADC
conversion

Sampling (n cycles) Conversion (12 cycles)

ADC clock

Iref+

700A

300A

MS36686V1

Table 66. Maximum source impedance RAIN max(1)

RAIN max (k)
Ts Ts (cycles)
Multiplexed channels Direct channels
(s) fADC=16 MHz(2)
2.4 V < VDDA < 3.6 V 1.8 V < VDDA < 2.4 V 2.4 V < VDDA < 3.6 V 1.8 V < VDDA < 2.4 V

0.25 Not allowed Not allowed 0.7 Not allowed 4

0.5625 0.8 Not allowed 2.0 1.0 9
1 2.0 0.8 4.0 3.0 16
1.5 3.0 1.8 6.0 4.5 24
3 6.8 4.0 15.0 10.0 48
6 15.0 10.0 30.0 20.0 96
12 32.0 25.0 50.0 40.0 192
24 50.0 50.0 50.0 50.0 384
1. Guaranteed by design.
2. Number of samples calculated for fADC = 16 MHz. For fADC = 8 and 4 MHz the number of sampling cycles can be reduced
with respect to the minimum sampling time Ts (s),

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 11. The applicable
procedure depends on whether VREF+ is connected to VDDA or not. The 100 nF capacitors
should be ceramic (good quality). They should be placed as close as possible to the chip.

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6.3.20 DAC electrical specifications

Data guaranteed by design, unless otherwise specified.

Table 67. DAC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 1.8 - 3.6

Reference supply VREF+ must always be below V

VREF+ 1.8 - 3.6
voltage VDDA
VREF- Lower reference voltage - VSSA
Current consumption on No load, middle code (0x800) - 130 220
IDDVREF+(1) VREF+ supply
VREF+ = 3.3 V No load, worst code (0x000) - 220 350
A
Current consumption on No load, middle code (0x800) - 210 320
IDDA(1) VDDA supply
VDDA = 3.3 V No load, worst code (0xF1C) - 320 520

RL(2) Resistive load 5 - - k

DAC output buffer ON
(2)
CL Capacitive load - - 50 pF
RO Output impedance DAC output buffer OFF 12 16 20 k

DAC output buffer ON 0.2 - VDDA 0.2 V

Voltage on DAC_OUT
VDAC_OUT
output
VREF+
DAC output buffer OFF 0.5 - mV
1LSB

CL 50 pF, RL 5 k
- 1.5 3
Differential non DAC output buffer ON
(1)
DNL
linearity(3)
No RL, CL 50 pF
- 1.5 3
DAC output buffer OFF
CL 50 pF, RL 5 k
- 2 4
DAC output buffer ON
(1) linearity(4)
INL Integral non
No RL, CL 50 pF LSB
- 2 4
DAC output buffer OFF
CL 50 pF, RL 5 k
- 10 25
Offset error at code DAC output buffer ON
Offset(1)
0x800 (5) No RL, CL 50 pF
- 5 8
DAC output buffer OFF
Offset error at code No RL, CL 50 pF
Offset1(1) - 1.5 5
0x001(6) DAC output buffer OFF

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Table 67. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

VDDA = 3.3V
VREF+ = 3.0V
-20 -10 0
TA = 0 to 50 C
Offset error temperature DAC output buffer OFF
dOffset/dT(1) V/C
coefficient (code 0x800) V = 3.3V
DDA
VREF+ = 3.0V
0 20 50
TA = 0 to 50 C
DAC output buffer ON
CL 50 pF, RL 5 k
- +0.1 / -0.2% +0.2 / -0.5%
DAC output buffer ON
Gain(1) Gain error(7) %
No RL, CL 50 pF
- +0 / -0.2% +0 / -0.4%
DAC output buffer OFF
VDDA = 3.3V
VREF+ = 3.0V
-10 -2 0
TA = 0 to 50 C
Gain error temperature DAC output buffer OFF
dGain/dT(1) V/C
coefficient VDDA = 3.3V
VREF+ = 3.0V
-40 -8 0
TA = 0 to 50 C
DAC output buffer ON
CL 50 pF, RL 5 k
- 12 30
DAC output buffer ON
TUE(1) Total unadjusted error LSB
No RL, CL 50 pF
- 8 12
DAC output buffer OFF
Settling time (full scale:
for a 12-bit code
transition between the
tSETTLING lowest and the highest CL 50 pF, RL 5 k - 7 12 s
input codes till
DAC_OUT reaches final
value 1LSB
Max frequency for a
correct DAC_OUT
change (95% of final
Update rate CL 50 pF, RL 5 k - - 1 Msps
value) with 1 LSB
variation in the input
code
Wakeup time from off
state (setting the ENx bit
tWAKEUP CL 50 pF, RL 5 k - 9 15 s
in the DAC Control
(8)
register)
VDDA supply rejection
PSRR+ ratio (static DC CL 50 pF, RL 5 k - -60 -35 dB
measurement)
1. Data based on characterization results.
2. Connected between DAC_OUT and VSSA.
3. Difference between two consecutive codes - 1 LSB.

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4. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.
5. Difference between the value measured at Code (0x800) and the ideal value = VREF+/2.
6. Difference between the value measured at Code (0x001) and the ideal value.
7. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when
buffer is OFF, and from code giving 0.2 V and (VDDA 0.2) V when buffer is ON.
8. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).

Figure 39. 12-bit buffered /non-buffered DAC

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1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by
configuring the BOFFx bit in the DAC_CR register.

6.3.21 Operational amplifier characteristics

Table 68. Operational amplifier characteristics

Symbol Parameter Condition(1) Min(2) Typ Max(2) Unit

CMIR Common mode input range - 0 - VDD

Maximum
- - - 15
calibration range
VIOFFSET Input offset voltage mV
After offset
- - - 1.5
calibration

Input offset voltage Normal mode - - - 40 V/C

VIOFFSET
drift Low-power mode - - - 80
Dedicated input - - 1
IIB Input current bias General purpose 75 C nA
- - 10
input
Normal mode - - - 500
ILOAD Drive current A
Low-power mode - - - 100
Normal mode No load, - 100 220
IDD Consumption A
Low-power mode quiescent mode - 30 60

Common mode Normal mode - - -85 -

CMRR dB
rejection ration Low-power mode - - -90 -

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Table 68. Operational amplifier characteristics (continued)

Symbol Parameter Condition(1) Min(2) Typ Max(2) Unit

Power supply Normal mode - -85 -

PSRR DC dB
rejection ratio Low-power mode - -90 -
Normal mode 400 1000 3000
VDD>2.4 V
Low-power mode 150 300 800
GBW Bandwidth kHZ
Normal mode 200 500 2200
VDD<2.4 V
Low-power mode 70 150 800
VDD>2.4 V
Normal mode (between 0.1 V and - 700 -
VDD-0.1 V)
SR Slew rate Low-power mode VDD>2.4 V - 100 - V/ms

Normal mode - 300 -

VDD<2.4 V
Low-power mode - 50 -
Normal mode 55 100 -
AO Open loop gain dB
Low-power mode 65 110 -
Normal mode 4 - -
RL Resistive load VDD<2.4 V k
Low-power mode 20 - -
CL Capacitive load - - - 50 pF
VDD-
High saturation Normal mode - -
VOHSAT 100
voltage
Low-power mode ILOAD = max or VDD-50 - - mV
RL = min
Low saturation Normal mode - - 100
VOLSAT
voltage Low-power mode - - 50
m Phase margin - - 60 -
GM Gain margin - - -12 - dB
Offset trim time: during calibration,
tOFFTRIM minimum time needed between two - - 1 - ms
steps to have 1 mV accuracy
CL 50 pf,
Normal mode - 10 -
RL 4 k
tWAKEUP Wakeup time s
CL 50 pf,
Low-power mode - 30 -
RL 20 k
1. Operating conditions are limited to junction temperature (0 C to 105 C) when VDD is below 2 V. Otherwise to the full
ambient temperature range (-40 C to 85 C, -40 C to 105 C).
2. Guaranteed by characterization results.

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6.3.22 Temperature sensor characteristics

Table 69. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at

TS_CAL1 temperature of 30 C 5 C 0x1FF8 00FA - 0x1FF8 00FB
VDDA= 3 V 10 mV
TS ADC raw data acquired at
TS_CAL2 temperature of 110 C 5 C 0x1FF8 00FE - 0x1FF8 00FF
VDDA= 3 V 10 mV

Table 70. Temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - 1 2 C

Avg_Slope(1) Average slope 1.48 1.61 1.75 mV/C
V110 Voltage at 110C 5C(2) 612 626.8 641.5 mV
I DDA(TEMP)
(3)
Current consumption - 3.4 6 A
tSTART(3) Startup time - - 10
ADC sampling time when reading the s
TS_temp(3) 4 - -
temperature
1. Guaranteed by characterization results.
2. Measured at VDD = 3 V 10 mV. V110 ADC conversion result is stored in the TS_CAL2 byte.
3. Guaranteed by design.

6.3.23 Comparator

Table 71. Comparator 1 characteristics

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

VDDA Analog supply voltage - 1.65 3.6 V

R400K R400K value - - 400 -
k
R10K R10K value - - 10 -
Comparator 1 input
VIN - 0.6 - VDDA V
voltage range
tSTART Comparator startup time - - 7 10
s
(2)
td Propagation delay - - 3 10
Voffset Comparator offset - - 3 10 mV
VDDA = 3.6 V
Comparator offset
VIN+ = 0 V
dVoffset/dt variation in worst voltage 0 1.5 10 mV/1000 h
VIN- = VREFINT
stress conditions
TA = 25 C
ICOMP1 Current consumption(3) - - 160 260 nA

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Electrical characteristics STM32L151xD STM32L152xD

1. Guaranteed by characterization results.

2. The delay is characterized for 100 mV input step with 10 mV overdrive on the inverting input, the non-
inverting input set to the reference.
3. Comparator consumption only. Internal reference voltage not included.

Table 72. Comparator 2 characteristics

Symbol Parameter Conditions Min Typ Max(1) Unit

VDDA Analog supply voltage - 1.65 - 3.6 V

VIN Comparator 2 input voltage range - 0 - VDDA V
Fast mode - 15 20
tSTART Comparator startup time
Slow mode - 20 25
1.65 V VDDA 2.7 V - 1.8 3.5
td slow Propagation delay(2) in slow mode s
2.7 V VDDA 3.6 V - 2.5 6
1.65 V VDDA 2.7 V - 0.8 2
td fast Propagation delay(2) in fast mode
2.7 V VDDA 3.6 V - 1.2 4
Voffset Comparator offset error - 4 20 mV
VDDA = 3.3V
TA = 0 to 50 C
dThreshold/ Threshold voltage temperature V- =VREFINT, ppm
- 15 100
dt coefficient 3/4 VREFINT, /C
1/2 VREFINT,
1/4 VREFINT.
Fast mode - 3.5 5
ICOMP2 Current consumption(3) A
Slow mode - 0.5 2
1. Guaranteed by characterization results.
2. The delay is characterized for 100 mV input step with 10 mV overdrive on the inverting input, the non-
inverting input set to the reference.
3. Comparator consumption only. Internal reference voltage (necessary for comparator operation) is not
included.

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6.3.24 LCD controller

The device embeds a built-in step-up converter to provide a constant LCD reference voltage
independently from the VDD voltage. An external capacitor Cext must be connected to the
VLCD pin to decouple this converter.

Table 73. LCD controller characteristics

Symbol Parameter Min Typ Max Unit

VLCD LCD external voltage - - 3.6

VLCD0 LCD internal reference voltage 0 - 2.6 -
VLCD1 LCD internal reference voltage 1 - 2.73 -
VLCD2 LCD internal reference voltage 2 - 2.86 -
VLCD3 LCD internal reference voltage 3 - 2.98 - V
VLCD4 LCD internal reference voltage 4 - 3.12 -
VLCD5 LCD internal reference voltage 5 - 3.26 -
VLCD6 LCD internal reference voltage 6 - 3.4 -
VLCD7 LCD internal reference voltage 7 - 3.55 -
Cext VLCD external capacitance 0.1 - 2 F
Supply current at VDD = 2.2 V - 3.3 -
ILCD(1) A
Supply current at VDD = 3.0 V - 3.1 -
RHtot(2) Low drive resistive network overall value 5.28 6.6 7.92 M
(2)
RL High drive resistive network total value 192 240 288 k
V44 Segment/Common highest level voltage - - VLCD V
V34 Segment/Common 3/4 level voltage - 3/4 VLCD -
V23 Segment/Common 2/3 level voltage - 2/3 VLCD -
V12 Segment/Common 1/2 level voltage - 1/2 VLCD -
V
V13 Segment/Common 1/3 level voltage - 1/3 VLCD -
V14 Segment/Common 1/4 level voltage - 1/4 VLCD -
V0 Segment/Common lowest level voltage 0 - -
Segment/Common level voltage error
Vxx(3) - - 50 mV
TA = -40 to 105 C
1. LCD enabled with 3 V internal step-up active, 1/8 duty, 1/4 bias, division ratio= 64, all pixels active, no LCD
connected.
2. Guaranteed by design.
3. Guaranteed by characterization results.

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Package information STM32L151xD STM32L152xD

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

7.1 LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package

information
Figure 40. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline
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130/154 DocID022027 Rev 11

STM32L151xD STM32L152xD Package information

Table 74. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package mechanical
data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.8740
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 - 17.500 - - 0.6890 -
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 - 17.500 - - 0.6890 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0 3.5 7 0 3.5 7
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

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153
Package information STM32L151xD STM32L152xD

Figure 41. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package

recommended footprint

 

  



 


 

 



DLH

1. Dimensions are in millimeters.

Marking of engineering samples

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.

Figure 42. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package top view
example

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1. Parts marked as ES, E or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity

132/154 DocID022027 Rev 11

STM32L151xD STM32L152xD Package information

7.2 LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package

information
Figure 43. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package outline
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Table 75. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical
data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378
D1 13.800 14.000 14.200 0.5433 0.5512 0.5591
D3 - 12.000 - - 0.4724 -
E 15.800 16.000 16.200 0.6220 0.6299 0.6378
E1 13.800 14.000 14.200 0.5433 0.5512 0.5591

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153
Package information STM32L151xD STM32L152xD

Table 75. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical
data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E3 - 12.000 - - 0.4724 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0.0 3.5 7.0 0.0 3.5 7.0
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 44. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package

recommended footprint

 

 




 

 


 




069

1. Dimensions are in millimeters.

134/154 DocID022027 Rev 11

STM32L151xD STM32L152xD Package information

Marking of engineering samples

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.

Figure 45. LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package top view
example

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1. Parts marked as ES, E or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity

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153
Package information STM32L151xD STM32L152xD

7.3 LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package

information
Figure 46. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package outline
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1. Drawing is not to scale.

Table 76. LQFP64, 10 x 10 mm 64-pin low-profile quad flat package mechanical

data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D - 12.000 - - 0.4724 -
D1 - 10.000 - - 0.3937 -
D3 - 7.500 - - 0.2953 -
E - 12.000 - - 0.4724 -
E1 - 10.000 - - 0.3937 -

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Table 76. LQFP64, 10 x 10 mm 64-pin low-profile quad flat package mechanical data
(continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
K 0 3.5 7 0 3.5 7
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 47. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package

recommended footprint

 


  






 


 





AIC

1. Dimensions are in millimeters.

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Package information STM32L151xD STM32L152xD

Marking of engineering samples

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.

Figure 48. LQFP64 10 x 10 mm, 64-pin low-profile quad flat package top view example

3URGXFWLGHQWLILFDWLRQ 5HYLVLRQFRGH

5
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1. Parts marked as ES, E or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity

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STM32L151xD STM32L152xD Package information

7.4 UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid

array package information
Figure 49. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array package
outline
& 6HDWLQJSODQH
$
GGG &

$ $
E $ $

(
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H = $ (

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8)%*$B$*B0(B9

1. Drawing is not to scale.

Table 77. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array
package mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.170 0.280 0.330 0.0067 0.0110 0.0130
D 6.950 7.000 7.050 0.2736 0.2756 0.2776
E 6.950 7.000 7.050 0.2736 0.2756 0.2776
e - 0.500 - - 0.0197 -
F 0.700 0.750 0.800 0.0276 0.0295 0.0315

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Package information STM32L151xD STM32L152xD

Table 77. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array
package mechanical data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

ddd - - 0.080 - - 0.0031

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 50. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array package
recommended footprint

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140/154 DocID022027 Rev 11

STM32L151xD STM32L152xD Package information

Marking of engineering samples

The following figure gives an example of topside marking orientation versus ball A1 identifier
location.

Figure 51. UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch ball grid array package
top view example

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5HYLVLRQFRGH
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1. Parts marked as ES, E or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity

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Package information STM32L151xD STM32L152xD

7.5 WLCSP64, 0.4 mm pitch wafer level chip scale package

information
Figure 52. WLCSP64, 0.4 mm pitch wafer level chip scale package outline

H EEE =

*
 
$

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H

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*

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) $

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$-9B0(B9

1. Drawing is not to scale.

Table 78. WLCSP64, 0.4 mm pitch wafer level chip scale package mechanical
data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.540 0.570 0.600 0.0205 0.0224 0.0236

A1 - 0.190 - - 0.0075 -
A2 - 0.380 - - 0.0150 -

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STM32L151xD STM32L152xD Package information

Table 78. WLCSP64, 0.4 mm pitch wafer level chip scale package mechanical data
(continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

b(2) 0.240 0.270 0.300 0.0094 0.0106 0.0118

D 4.504 4.539 4.574 0.1773 0.1787 0.1801
E 4.876 4.911 4.946 0.1920 0.1933 0.1947
e - 0.400 - - 0.0157 -
e1 - 2.800 - - 0.1102 -
F - 0.870 - - 0.0343 -
G - 1.056 - - 0.0416 -
aaa - - 0.100 - - 0.0039
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020
eee - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 53. WLCSP64, 0.4 mm pitch wafer level chip scale package
recommended footprint

'SDG

'VP 069

Table 79. WLCSP64, 0.4 mm pitch package recommended PCB design rules
Dimension Recommended values
Pitch 0.4
260 m max. (circular)
Dpad
220 m recommended
Dsm 300 m min. (for 260 m diameter pad)
PCB pad design Non-solder mask defined via underbump allowed.

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Package information STM32L151xD STM32L152xD

Marking of engineering samples

The following figure gives an example of topside marking orientation versus ball A1 identifier
location.

Figure 54. WLCSP64, 0.4 mm pitch wafer level chip scale package top view example

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LGHQWLILHU

069

1. Parts marked as ES, E or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity

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STM32L151xD STM32L152xD Package information

7.6 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max JA)
Where:
TA max is the maximum ambient temperature in C,
JA is the package junction-to-ambient thermal resistance, in C/W,
PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = (VOL IOL) + ((VDD VOH) IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 80. Thermal characteristics

Symbol Parameter Value Unit
Thermal resistance junction-ambient
40
LQFP144 - 20 x 20 mm / 0.5 mm pitch
Thermal resistance junction-ambient
60
UFBGA132 - 7 x 7 mm
Thermal resistance junction-ambient
JA 43 C/W
LQFP100 - 14 x 14 mm / 0.5 mm pitch
Thermal resistance junction-ambient
46
LQFP64 - 10 x 10 mm / 0.5 mm pitch
Thermal resistance junction-ambient
46
WLCSP64 - 0.400 mm pitch

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Package information STM32L151xD STM32L152xD

Figure 55. Thermal resistance suffix 6




&d:d:



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/4)3[PP:/&63

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069

Figure 56. Thermal resistance suffix 7




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06Y9

7.6.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.

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STM32L151xD STM32L152xD Part numbering

8 Part numbering
Table 81. Ordering information scheme
Example: STM32 L 151 R D T 6 D TR

Device family
STM32 = ARM-based 32-bit microcontroller

Product type
L = Low-power

Device subfamily
151: Devices without LCD
152: Devices with LCD

Pin count
R = 64 pins
V = 100 pins
Z = 144 pins
Q = 132 pins

Flash memory size

D=384 Kbytes of Flash memory

Package
H = BGA
T = LQFP
Y = WLCSP

Temperature range
6 = Industrial temperature range, 40 to 85 C
7 = Industrial temperature range, 40 to 105 C

Options
No character = VDD range: 1.8 to 3.6 V and BOR enabled
D = VDD range: 1.65 to 3.6 V and BOR disabled

Packing
TR = tape and reel
No character = tray or tube

For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact the nearest ST sales office.

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Revision History STM32L151xD STM32L152xD

9 Revision History

Table 82. Document revision history

Date Revision Changes

03-Oct-2011 1 Initial release.

Status of the document changed (datasheet instead of preliminary
data).
Updated low power features on page 1.
Removed references to devices with 256 KB of Flash memory.
GPIOF replaced with GIOPH.
Added SDIO in Table 4: Ultra-low-power STM32L15xxD device
features and peripheral counts on page 12 and in Table 19: ction
input/output on page 86 (FSMC/SDIO instead of FSMC).
Table 4: Ultra-low-power STM32L15xxD device features and
peripheral counts: replaced STM32L15xWx with STM32L15xQx.
Figure 1: Ultra-low-power STM32L162xC block diagram: updated
legend.
Modified Section 3.4: Clock management on page 20.
Table 4: STM32L15xQD STM32L162QD UFBGA132 ballout: replaced
STM32L15xWC/D with STM32L15xQD.
Figure 3, Figure 3, Figure 4: updated titles.
Table 14: STM32L15xxD pin definitions: updated title, updated pins
PF0, PF1, PH2, PF12, PF13, PF14, PF15, PG0, PG1, PG12, PG15,
03-Feb-2012 2 PD0, and PD1.
Table 19: ction input/output: Modified ction for PA13 and PA14;
removed EVENT OUT for PH2.
Figure 5: Memory map: removed the text APB memory space.
Modified Figure 8: Power supply scheme on page 46.
Modified Table 2: Functionalities depending on the operating power
supply range on page 15.
Table 18: Current consumption in Run mode, code with data
processing running from RAM: added footnote 3.
Table 19: Current consumption in Sleep mode: updated condition for
fHSE; added footnote 3.
Table 23: Typical and maximum current consumptions in Standby
mode: modified max values.
Table 64: USB DC electrical characteristics: removed two footnotes.
Modified Table 38: Flash memory and data EEPROM characteristics
on page 83.
Table 73: Thermal characteristics: updated TBDs with values.
Modified tables in Section 6.3.4: Supply current characteristics on
page 54.

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Table 82. Document revision history (continued)

Date Revision Changes

Added WLCSP64 package.

Section 3: Functional overview: changed 128 kHz to 131 kHz in
section Low power run mode.
Section 3.17.1: General-purpose timers (TIM2, TIM3, TIM4, TIM5,
TIM9, TIM10 and TIM11): changed six to seven synchronizable
general-purpose timers.
18-Apr-2012 3 Table 14: STM32L15xxD pin definitions on page 52: updated name of
reference manual in footnote 5.
I2C updated: footnote 3. from Table 58
Note about I2C clock updated: footnote 2. from Table 58 modified.
Note [non-robust] updated: footnote 2. from Table 68 modified.
GPIOs high current capability updated: Section 3.6: GPIOs (general-
purpose inputs/outputs) except for analog inputs was removed.
Changed maximum number of touch sensing channels to 34, and
updated Table 4: Ultra-low-power STM32L15xxD device features and
peripheral counts.
Updated Section 3.10: ADC (analog-to-digital converter) to add
Section 3.10.1: Temperature sensor and Section 3.10.2: Internal
voltage reference (VREFINT).
Removed caution note below Figure 8: Power supply scheme.
Added note below Table 4: STM32L15xQD STM32L162QD
UFBGA132 ballout.
Modified Table 8: STM32L15xRDSTM32L162RD WLCSP64 ballout to
match top view.
Changed FSMC_LBAR into FSMC_NADV, and I2C1_SMBAI into
15-Jun-2012 4
I2C1_SMBA in Table 14: STM32L15xxD pin definitions.
Modified PB10/11/12 for AFIO4 ction, and replaced LBAR by NADV for
AFIO12 in Table 19: ction input/output.
Updated Table 22: Typical and maximum current consumptions in Stop
mode and added Note 6. Updated Table 23: Typical and maximum
current consumptions in Standby mode. Updated tWUSTOP in Table : .
Updated Table 27: Peripheral current consumption.
Updated Table 60: SPI characteristics, added Note 1 and Note 3, and
applied Note 2 to tr(SCK), tf(SCK), tw(SCKH), tw(SCKL), tsu(MI), tsu(SI), th(MI),
and th(SI).
Updated IDD maximum value in Table 38: Flash memory and data
EEPROM characteristics.

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Revision History STM32L151xD STM32L152xD

Table 82. Document revision history (continued)

Date Revision Changes

Updated Features
Updated Figure 1: Ultra-low-power STM32L162xC block diagram
Added Table 4: Functionalities depending on the working mode (from
Run/active down to standby), and Table 3: ange depending on
dynamic voltage scaling
Updated Figure 3: STM32L162VC LQFP100 pinout
Updated Table 14: STM32L15xxD pin definitions
Added Note 2 in Table 15: Embedded reset and power control block
characteristics
Replaced TBD values in Table 30: Low-speed external user clock
25-Oct-2012 5
characteristics, Table 38: Flash memory and data EEPROM
characteristics and Table 55: I/O AC characteristics
Added Table 61: I2S characteristics, Figure 29: I2S slave timing
diagram (Philips protocol)(1) and Figure 30: I2S master timing diagram
(Philips protocol)(1)
Added Table 62: SDIO characteristics
Added Figure 31: SDIO timings
Updated Section 6.3.9: FSMC characteristics
Updated Table 72: Temperature sensor characteristics
Added Figure 40: Thermal resistance
Removed AHB1/AHB2 and corrected typo on APB1/APB2 in Figure 1:
Ultra-low-power STM32L162xC block diagram
Updated OP amp line in Table 4: Functionalities depending on the
working mode (from Run/active down to standby)
Added IWDG and WWDG rows in Table 4: Functionalities depending
on the working mode (from Run/active down to standby)
Added OneNAND support in Section 3.8: FSMC (flexible static
memory controller)
The comment "HSE = 16 MHz(2) (PLL ON for fHCLK above 16 MHz)"
01-Feb-2013 6
replaced by "fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2
above 16 MHz (PLL ON)(2) in table Table 19: Current consumption in
Sleep mode
Updated Stop mode current to 1.5 A in Ultra low power platform
Replaced BGA132 by UFBGA132 in Table 4: Ultra-low-power
STM32L15xxD device features and peripheral counts
Replaced BGA132 by UFBGA132 in Figure 4:
STM32L15xQD STM32L162QD UFBGA132 ballout
Updated entire Section 7: Package characteristics

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Table 82. Document revision history (continued)

Date Revision Changes

Updated current consumption in Section : Features.

Updated Section 2.2: Ultra-low-power device continuum.
Updated Table 3: Functionalities depending on the operating power
supply range..
Added VDD= 1.71 to 1.8 V operating power supply range in Table 5:
Functionalities depending on the working mode (from Run/active down
to standby).
Updated Section 3.10: LCD (liquid crystal display) to remove VLCD rail
decoupling.
Updated Section 3.16: Touch sensing.
Updated Figure 5: Pin loading conditions.
Updated Figure 6: Pin input voltage.
Updated Figure 11: Power supply scheme.
Updated Table 10: Voltage characteristics (added row).
Updated Table 11: Current characteristics.
Updated Table 13: General operating conditions. Removed figures
Power supply and reference decoupling (VREF+ not connected to
VDDA) and Power supply and reference decoupling (VREF+ connected
to VDDA).
Updated Table 15: Embedded internal reference voltage calibration
values and moved inside Section 6.3.3: Embedded internal reference
07-Apr-2014 7 voltage.
Updated Section 6.3.4: Supply current characteristics.
Updated Table 17: Current consumption in Run mode, code with data
processing running from Flash, Table 18: Current consumption in Run
mode, code with data processing running from RAM, Table 19: Current
consumption in Sleep mode, Table 20: Current consumption in Low-
power run mode, Table 21: Current consumption in Low-power sleep
mode, Table 22: Typical and maximum current consumptions in Stop
mode, and Table 23: Typical and maximum current consumptions in
Standby mode.
Added Section 6.3.5: Wakeup time from low-power mode.
Updated Section 6.3.6: External clock source characteristics.
Moved Figure 14: High-speed external clock source AC timing diagram
after Table 26: High-speed external user clock characteristics.
Updated Figure 17: Typical application with a 32.768 kHz crystal.
Updated Table 28: HSE oscillator characteristics.
Updated Section 6.3.12: Electrical sensitivity characteristics (title).
Updated Section 6.3.13: I/O current injection characteristics. Updated
Table 49: I/O current injection susceptibility and added footnote.
Updated conditions in Table 51: Output voltage characteristics.
Updated Section 6.3.15: NRST pin characteristics.Updated Figure 27:
Recommended NRST pin protection. Updated Table 53: NRST pin
characteristics.

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Revision History STM32L151xD STM32L152xD

Table 82. Document revision history (continued)

Date Revision Changes

Updated Figure 28: I2C bus AC waveforms and measurement circuit.

Updated SDA data hold time and SDA and SCL rise time values
and added Pulse width of spikes that are suppressed by the analog
filter row in Table 55: I2C characteristics.
Updated Table 64: ADC characteristics and Table 65: ADC accuracy.
Updated Table 67: DAC characteristics.
Updated Table 69: Temperature sensor calibration values and moved
7
07-Apr-2014 inside Section 6.3.22: Temperature sensor characteristics. Removed
(continued)
note 4 in Table 70: Temperature sensor characteristics.
Updated Table 76: LQFP64, 10 x 10 mm 64-pin low-profile quad flat
package mechanical data and Table 77: UFBGA132, 7 x 7 mm, 132-
ball ultra thin, fine-pitch ball grid array package mechanical data.
Updated Section 8: Part numbering (title).
Added Table 50: UFBGA132, 7 x 7 mm, 132-ball ultra thin, fine-pitch
ball grid array package recommended footprint..
Updated Section 3.18: Communication interfaces putting I2S
characteristics inside.
Updated DMIPS features in cover page and Section 2: Description.
Updated max temperature at 105C instead of 85C in the whole
datasheet.
23-Oct-2014 8 Updated currents consumption in Table 19: Current consumption in
Sleep mode.
Updated Table 24: Peripheral current consumption with new measured
current values.
Updated Table 66: Maximum source impedance RAIN max adding
note 2.
Updated Section 7: Package information with new package device
04-Feb-2015 9 marking.
Updated Figure 8: Memory map.

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Table 82. Document revision history (continued)

Date Revision Changes

Updated Section 7: Package information with new package paragraph

structure (paragraph title and heading level) and adding note for device
orientation versus pin 1/ ball A1 identifier.
Updated Figure 42: LQFP144, 20 x 20 mm, 144-pin low-profile quad
flat package top view example and Figure 45: LQFP100, 14 x 14 mm,
100-pin low-profile quad flat package top view example removing gate
mark.
Added Figure 53: WLCSP64, 0.4 mm pitch wafer level chip scale
package recommended footprint and Table 79: WLCSP64, 0.4 mm
02-Apr-2015 10 pitch package recommended PCB design rules.
Updated Table 8: STM32L151xD and STM32L152xD pin definitions
ADC inputs.
Updated Table 16: Embedded internal reference voltage temperature
coefficient at 100ppm/C.
and table footnote 3: guaranteed by design changed by guaranteed
by characterization results.
Updated Table 72: Comparator 2 characteristics new maximum
threshold voltage temperature coefficient at 100ppm/C.
Updated cover page putting eight SPIs in the peripheral
communication interface list.
Updated Table 2: Ultra-low-power STM32L151xD and STM32L152xD
device features and peripheral counts SPI and I2S lines.
Updated Table 47: ESD absolute maximum ratings CDM class II by
class III.
10-Feb-2016 11
Updated all the notes, removing not tested in production.
Updated Table 10: Voltage characteristics adding note about VREF-
pin.
Updated Table 5: Functionalities depending on the working mode (from
Run/active down to standby) LSI and LSE functionalities putting Y in
Standby mode.

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 STM32L151xD STM32L152xD

IMPORTANT NOTICE PLEASE READ CAREFULLY

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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

2016 STMicroelectronics All rights reserved

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