Scribd
Upload
661 views2 pages

7 N 65

The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

Uploaded by

Aris Romdoni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
661 views2 pages

7 N 65

The document summarizes the specifications of the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It features a drain current of 7A, drain-source voltage of 650V, and on-resistance of 1.35 ohms or less. It is suitable for high-speed switching applications in power supplies, motor controls, and DC-DC converters due to its fast switching and avalanche energy capability. Key electrical characteristics include a breakdown voltage of 650V or more, threshold voltage between 2-4V, and on-resistance of 1.35 ohms or less when operated within recommended ratings.

Uploaded by

Aris Romdoni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 7N65

FEATURES
Drain Current ID= 7A@ TC=25
Drain Source Voltage
: VDSS= 650V(Min)
Static Drain-Source On-Resistance
: RDS(on) = 1.35(Max) @VGS = 10 V
Avalanche Energy Specified
Fast Switching

APPLICATIONS
High speed switching applications in power supplies
PWM motor controls
High efficient DC to DC converters and bridge circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25


)
SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 650 V

VGS Gate-Source Voltage-Continuous 30 V

ID Drain Current-Continuous 7 A

IDM Drain Current-Single Plused 28 A

PD Total Dissipation @TC=25 142 W

Tj Max. Operating Junction Temperature 150

Tstg Storage Temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 0.88 /W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 /W

isc websitewww.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 7N65

ELECTRICAL CHARACTERISTICS
unless otherwise specified
TC=25

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 650 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A 1.35

IGSS Gate-Body Leakage Current VGS= 30V; VDS= 0 100 nA

IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 1 A

VSD Forward On-Voltage IS= 7A; VGS= 0 1.4 V

Gfs Forward Transconductance VDS= 40VID= 3.5A 8 S

isc websitewww.iscsemi.com 2 isc & iscsemi is registered trademark

You might also like

pFad - Phonifier reborn

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


Alternative Proxies:

Alternative Proxy

pFad Proxy

pFad v3 Proxy

pFad v4 Proxy