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Datasheet

This document provides product specifications for the INCHANGE Semiconductor 12N60 N-Channel MOSFET transistor. Key features include a drain current of 12A, drain-source voltage rating of 600V, and on-resistance of 0.7 ohms or less. The document lists maximum ratings, thermal characteristics, and electrical characteristics for the transistor, including parameters like breakdown voltage, threshold voltage, leakage currents, and forward on-voltage. It is designed for high efficiency switch mode power supplies and applications requiring fast switching with simple drive requirements.

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Raul Alfaro
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425 views2 pages

Datasheet

This document provides product specifications for the INCHANGE Semiconductor 12N60 N-Channel MOSFET transistor. Key features include a drain current of 12A, drain-source voltage rating of 600V, and on-resistance of 0.7 ohms or less. The document lists maximum ratings, thermal characteristics, and electrical characteristics for the transistor, including parameters like breakdown voltage, threshold voltage, leakage currents, and forward on-voltage. It is designed for high efficiency switch mode power supplies and applications requiring fast switching with simple drive requirements.

Uploaded by

Raul Alfaro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor 12N60

·FEATURES
·Drain Current –ID= 12A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V (Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements

·DESCRITION
·Designed for high efficiency switch mode power supply.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃


℃)
SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 600 V

VGS Gate-Source Voltage-Continuous ±30 V

ID Drain Current-Continuous 12 A

IDM Drain Current-Single Plused 48 A

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 0.8 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

： www.iscsemi.com
isc website： 1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor 12N60

ELECTRICAL CHARACTERISTICS
℃ unless otherwise specified
TC=25℃

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 600 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6.0A 0.7 Ω

IGSS Gate-Body Leakage Current VGS= ±30V; VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 10 μA

VSD Forward On-Voltage IS= 12A; VGS= 0 1.4 V

： www.iscsemi.com
isc website： 2 isc & iscsemi is registered trademark

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